Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature

Kim, M. H.; Oshima, M.; Kinoshita, H.; Shirakura, Y.; Miyamura, K.; Ohta, J.; Kobayashi, A.; Fujioka, H.

doi:doi:10.1063/1.2227616

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Ca test of Al₂O₃ gas diffusion barriers grown by atomic layer deposition on polymers

Quantitative Ca tests were used to determine the water vapor transmission rate (WVTR) through 25 nm thick Al2O3 gas diffusion barriers grown on plastic by atomic layer deposition (ALD). The measured WVTRs were 1.7×10−5 g/m2 day at 38 °C and 6.5×10−5 g/m2 day at 60 °C. Based on the apparent activation energy, the WVTR at 23 °C is estimated to be only 6×10−6 g/m2 day. The WVTR values for the Al2O3 ALD film are very similar to the WVTR value for the glass control. These Ca tests indicate that Al2O...

Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation

Raman scattering technique was used to investigate the structural phase transformations and multiple phase generation of silicon induced by cyclic microindentations. Indentation cycles were performed on three different samples: monocrystalline, amorphous film, and on partially amorphous silicon generated by single point diamond turning. The results indicated that the formation of some pressure induced structural phases may be dependent upon the initial structural state of the materials surface:...

We have investigated the initial stage of GaN epitaxial growth on 6H-SiC (0001) at low substrate temperatures by pulsed laser deposition (PLD). We found that GaN grows epitaxially even at room temperature (RT) on atomically flat 6H-SiC (0001) surfaces, which can be explained by the enhanced surface migration of film precursors due to the use of PLD and atomically flat substrates. In situ reflection high-energy election diffraction observations have revealed that GaN films grown at above 300 °C proceed in a three-dimensional mode, while those at RT proceed in a layer-by-layer growth mode with atomically flat terraces and steps. The step height turned out to be 1.5 nm, which is the same height as the steps on the SiC substrates. This result indicates that the step height on the SiC surface is retained as the GaN grows.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor epitaxial layers, pulsed laser deposition, semiconductor growth, reflection high energy electron diffraction

PACS

68.55.A-

Nucleation and growth
68.55.-a

Thin film structure and morphology
81.15.Fg

Pulsed laser ablation deposition

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2227616

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

For access to citing articles, you need to log in.

Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)