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17 Jul 2006

Volume 89, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 031107 (2006); http://dx.doi.org/10.1063/1.2222329 (3 pages)

Jiaguang Han, Zhiyuan Zhu, Sanith Ray, Abul K. Azad, Weili Zhang, Mingxia He, Shihong Li, and Yiping Zhao
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Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

Zhenxiang Cheng, Chinna Venkatasamy Kannan, Kiyoshi Ozawa, Hideo Kimura, and Xiaolin Wang

Appl. Phys. Lett. 89, 032901 (2006); http://dx.doi.org/10.1063/1.2221918 (3 pages) | Cited 13 times

Online Publication Date: 17 July 2006

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Samarium doped bismuth titanate thin films with the composition of Bi3.25Sm0.75Ti3O12 and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser ablation. Measurements on Pt/BSmT/Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2Pr) of 5 μC/cm2, while the highly (117) oriented film showed a 2Pr value of 54 μC/cm2 at an electrical field of 268 kV/cm and a coercive field Ec of 89 kV/cm. This is different from the sol-gel derived c-axis oriented Bi3.15Sm0.85Ti3O12 film showing a 2Pr value of 49 μC/cm2.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization
68.55.-a Thin film structure and morphology

Control of lateral domain spreading in congruent lithium niobate by selective proton exchange

S. Grilli, C. Canalias, F. Laurell, P. Ferraro, and P. De Natale

Appl. Phys. Lett. 89, 032902 (2006); http://dx.doi.org/10.1063/1.2221928 (3 pages) | Cited 10 times

Online Publication Date: 18 July 2006

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Proton exchange was observed to increase the poling voltage for congruent lithium niobate. Patterned proton exchange was then used to control domain nucleation and inhibit broadening of reversed domains. Periodically proton exchanged samples were used to form domain gratings by electric field poling just using planar electrodes and without need for poling current control. The reversed domain gratings had a duty cycle faithfully reproducing that of the proton exchanged pattern with straight domain walls parallel to the x face, thus demonstrating that high-fidelity reversed domain patterning is possible to obtain by a relatively simple process.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi

Appl. Phys. Lett. 89, 032903 (2006); http://dx.doi.org/10.1063/1.2227630 (3 pages) | Cited 57 times

Online Publication Date: 18 July 2006

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Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
61.43.Er Other amorphous solids
77.22.Ch Permittivity (dielectric function)

Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

G. Pant, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch, and S. Krishnan

Appl. Phys. Lett. 89, 032904 (2006); http://dx.doi.org/10.1063/1.2226991 (3 pages) | Cited 19 times

Online Publication Date: 19 July 2006

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The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm films of HfON and HfSiON after a 1000 °C-10 s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5 nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0 nm thickness whereas the 2.0 nm HfSiON film remained amorphous.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Epitaxial∕amorphous Ba0.3Sr0.7TiO3 film composite structure for tunable applications

Tomoaki Yamada, Vladimir O. Sherman, Andreas Nöth, Paul Muralt, Alexander K. Tagantsev, and Nava Setter

Appl. Phys. Lett. 89, 032905 (2006); http://dx.doi.org/10.1063/1.2226999 (3 pages) | Cited 20 times

Online Publication Date: 19 July 2006

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A Ba0.3Sr0.7TiO3 (BST) thin film composite structure was fabricated by means of a selective epitaxial growth process. The epitaxial growth of BST on SrRuO3 electrode surface was selectively achieved at 485 °C using a prepatterned ultrathin amorphous BST layer that locally prevented crystallization. This self-buildup mechanism resulted in a columnar composite structure, where epitaxial and amorphous BST columns are electrically connected in parallel. The effective permittivity of the composite capacitors decreased linearly upon increasing the amorphous BST concentration, while the tunability stayed fairly unchanged until it reached 70%. The results agree with the theoretical ferroelectric∕dielectric parallel composite model.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
84.32.Tt Capacitors

Coexisting depinning effect of domain walls during the fatigue in ferroelectric thin films

A. Q. Jiang, Y. Y. Lin, and T. A. Tang

Appl. Phys. Lett. 89, 032906 (2006); http://dx.doi.org/10.1063/1.2227626 (3 pages) | Cited 12 times

Online Publication Date: 19 July 2006

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Appropriate time relaxation before a driving pulse of domain switching can improve fatigue endurance in Pb(Zr,Ti)O3 thin films. The effect is more evident under a relaxation voltage close to a coercive voltage (Vc) in the same voltage polarity to the driving pulse, in contradiction with previous investigations of domain-wall pinning more effectively under driving voltages close to Vc. Pinning and depinning of domain walls are identified to coexist during bipolar voltage stressing of the films and both modeled per cycle on the basis of charge injection at high frequencies and mobile charge separation at low frequencies.
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77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.60.Bs Mechanical and acoustical properties
73.61.Ng Insulators

Grain and grain boundary effects in high-permittivity dielectric NiO-based ceramics

Yuan-Hua Lin, Ming Li, Ce-Wen Nan, Jingfeng Li, Junbo Wu, and Jinliang He

Appl. Phys. Lett. 89, 032907 (2006); http://dx.doi.org/10.1063/1.2227636 (3 pages) | Cited 24 times

Online Publication Date: 19 July 2006

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We present a Li and Ti codoped NiO-based polycrystalline ceramic with high-permittivity dielectric properties. Analysis of the ceramic microstructure and composition proves that obvious grain boundaries are formed. The measurements of frequency and temperature dependence of impedance and dielectric permittivity indicate that the grain and grain boundaries have remarkable influence on the dielectric properties due to the various activation energies corresponding to the dielectric relaxation processes. Our results also demonstrate that the activation energy required for relaxation Ea is almost the same to the activation energy of the conductivity in the grain interiors Eg.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
61.72.Mm Grain and twin boundaries
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