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17 Jul 2006

Volume 89, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 031107 (2006); http://dx.doi.org/10.1063/1.2222329 (3 pages)

Jiaguang Han, Zhiyuan Zhu, Sanith Ray, Abul K. Azad, Weili Zhang, Mingxia He, Shihong Li, and Yiping Zhao
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Field-induced polymer wall formation in a bistable smectic-A liquid crystal display

Ebru A. Büyüktanir, Nadina Gheorghiu, John L. West, Maxim Mitrokhin, Børre Holter, and Anatoliy Glushchenko

Appl. Phys. Lett. 89, 031101 (2006); http://dx.doi.org/10.1063/1.2221887 (3 pages) | Cited 9 times

Online Publication Date: 17 July 2006

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We developed a composite system to produce robust bistable smectic-A (SmA) liquid crystal based flexible displays by encapsulating the liquid crystal material in a polymer wall structure. While keeping all the intrinsic bistable properties of the SmA material, the field-induced polymer walls bridge the two display substrates and bring significant advantages over the polymer dispersed liquid crystal structure. Here we analyze the performance of an encapsulated pixel and demonstrate superior electro-optical characteristics, high contrast ratio, and excellent sunlight readability.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Lasing in optically pumped Ga(NAsP)/GaP heterostructures

S. Borck, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, J. Heber, W. W. Rühle, N. C. Gerhardt, and M. R. Hofmann

Appl. Phys. Lett. 89, 031102 (2006); http://dx.doi.org/10.1063/1.2221907 (3 pages) | Cited 11 times

Online Publication Date: 17 July 2006

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We experimentally investigate the characteristics of light emission of optically excited Ga(NAsP) multiple quantum-well structures grown pseudomorphically on a GaP substrate by metal-organic vapor-phase epitaxy. The emission power as a function of excitation power shows at temperatures from 15 to 200 K a clear threshold after excitation with short laser pulses. The emission spectra become narrow at threshold and shift to higher energies. A well defined mode structure is observed above threshold. Complementary, quasi-steady-state gain measurements using the stripe-length method yield positive modal gain values of up to 10 cm−1 at room temperature, thus validating that the structures show laser action.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Photonic crystal cavity-based micro/nanodisplay for visible lights

Baojun Li, Xuejuan Cai, and Yao Zhang

Appl. Phys. Lett. 89, 031103 (2006); http://dx.doi.org/10.1063/1.2222248 (3 pages) | Cited 2 times

Online Publication Date: 17 July 2006

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A micro/nanodisplay in a two-dimensional photonic crystal slab has been investigated for visible light applications. By introducing a line-defect waveguide and different point defect resonant cavities, incoming visible lights with different wavelengths can be trapped by the different size cavities and then emitted to the free space when they travel along the line-defect waveguide. Therefore, a colorful surface-emitting display can be achieved on the surface of the photonic crystal slab with all colors ranging from red to violet.
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42.70.Qs Photonic bandgap materials
42.79.Kr Display devices, liquid-crystal devices
42.79.Gn Optical waveguides and couplers

Fast response film-compensated liquid crystal on silicon display

X. J. Yu and H. S. Kwok

Appl. Phys. Lett. 89, 031104 (2006); http://dx.doi.org/10.1063/1.2222338 (3 pages) | Cited 7 times

Online Publication Date: 17 July 2006

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We have designed and constructed a fast response liquid crystal on silicon display. The stable alignment of this liquid crystal cell at zero-bias voltage is in the bend deformation. The measured total response time is 0.8 ms for the worst case and averages 0.3 ms for all gray levels. The optical reflectivity has been optimized to nearly 85% by using a compensation film. The white light contrast ratio is >500 at 6 V. This fast mode can be used in field sequential color systems.
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42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals
85.60.Pg Display systems
42.15.Eq Optical system design

Sequence of focused optical vortices generated by a spiral fractal zone plate

S. H. Tao, X.-C. Yuan, J. Lin, and R. E. Burge

Appl. Phys. Lett. 89, 031105 (2006); http://dx.doi.org/10.1063/1.2226995 (3 pages) | Cited 23 times

Online Publication Date: 17 July 2006

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We propose a method for producing a sequence of focused optical vortices along the propagation direction by using a spiral fractal zone plate. The generated beam possesses the optical vortices embedded at subsidiary foci as well as the major ones of the fractal zone plate. The experimental results are obtained in good agreement with the simulations.
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42.25.Bs Wave propagation, transmission and absorption
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Ci Filters, zone plates, and polarizers
05.45.Df Fractals

Backward difference frequency generation in an AlGaAs waveguide

L. Lanco, S. Ducci, J. P. Likforman, M. Ravaro, P. Filloux, X. Marcadet, G. Leo, and V. Berger

Appl. Phys. Lett. 89, 031106 (2006); http://dx.doi.org/10.1063/1.2226996 (3 pages) | Cited 4 times

Online Publication Date: 17 July 2006

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We report on the observation of a noncollinear difference frequency generation at 1.55 μm in an AlGaAs multilayer waveguide. In such three-wave-mixing process, which occurs between a transverse pump beam and two counterpropagating guided modes, the phase matching parameter is the angle of incidence of the pump and the peak efficiency is 3.5×10−6 W−1. This innovative device is suitable as a tunable, narrow-bandwidth source of counterpropagating twin photons for quantum information.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Wi Nonlinear waveguides
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Gn Optical waveguides and couplers

Optical and dielectric properties of ZnO tetrapod structures at terahertz frequencies

Jiaguang Han, Zhiyuan Zhu, Sanith Ray, Abul K. Azad, Weili Zhang, Mingxia He, Shihong Li, and Yiping Zhao

Appl. Phys. Lett. 89, 031107 (2006); http://dx.doi.org/10.1063/1.2222329 (3 pages) | Cited 16 times

Online Publication Date: 18 July 2006

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The low-frequency optical and dielectric properties of ZnO tetrapod structures prepared by thermophysical method were studied by terahertz time-domain spectroscopy. The power absorption, refractive index, and the complex dielectric function were measured in the frequency range from 0.2 to 3.5 THz. Based on a simple effective medium theory, the low-frequency dielectric properties of ZnO tetrapods were found to be associated with the transverse optical E1 phonon mode, which is consistent with that observed in bulk single-crystal ZnO.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.63.Bd Nanocrystalline materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.70.Gq Microwave and radio-frequency interactions

Low electrode induced optical losses in organic active single layer polyfluorene waveguides with two indium tin oxide electrodes deposited by pulsed laser deposition

S. Lattante, F. Romano, A. P. Caricato, M. Martino, and M. Anni

Appl. Phys. Lett. 89, 031108 (2006); http://dx.doi.org/10.1063/1.2222253 (3 pages) | Cited 8 times

Online Publication Date: 18 July 2006

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We demonstrate that 20 nm thick indium tin oxide (ITO) layers deposited by pulsed laser deposition present sheet resistance as low as 130 Ω/◻ and very uniform morphology, with an average roughness of about 0.4 nm, and peak-to-valley roughness as low as 8.2 nm. This good uniformity allowed us to realize a single layer polyfluorene active waveguide with both top and bottom ITO electrodes showing clear amplified spontaneous emission and electrode induced losses as low as 3.0 cm−1. We investigated the effects of hole injection in the ASE intensity concluding that complete gain suppression due to polaron absorption would take place for current density of about 360 mA cm−2.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
81.15.Fg Pulsed laser ablation deposition

Fast lifetime measurements of infrared emitters using a low-jitter superconducting single-photon detector

Martin J. Stevens, Robert H. Hadfield, Robert E. Schwall, Sae Woo Nam, Richard P. Mirin, and James A. Gupta

Appl. Phys. Lett. 89, 031109 (2006); http://dx.doi.org/10.1063/1.2221516 (3 pages) | Cited 29 times

Online Publication Date: 18 July 2006

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We use a superconducting single-photon detector with less than 40 Hz dark count rate to measure spontaneous emission lifetimes of quantum wells emitting light at wavelengths of 935 and 1245 nm. The timing jitter of the measurement system—which includes the detector and all other electronic and optical components—is 68±3 ps. We demonstrate how the infrared sensitivity and Gaussian temporal response function of this superconducting detector present clear advantages over conventional detector technologies.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
78.67.De Quantum wells

Microstructures on soluble polymer surfaces via drop deposition of solvent mixtures

Svetlana Karabasheva, Stanislav Baluschev, and Karlheinz Graf

Appl. Phys. Lett. 89, 031110 (2006); http://dx.doi.org/10.1063/1.2227056 (3 pages) | Cited 11 times

Online Publication Date: 18 July 2006

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We report a single step procedure for aspheric shaped microlens formation. By means of the ink-jet printing technique, microdroplets of mixtures of solvents with different volatilities are deposited on a soluble polymer substrate. The generated microstructures (diameter in range of about 200 μm–5 mm) exhibit a pronounced focusing effect. The method can be extended to one-dimensional and two-dimensional microlens arrays.
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42.82.Gw Other integrated-optical elements and systems
42.79.Bh Lenses, prisms and mirrors
42.82.Cr Fabrication techniques; lithography, pattern transfer

Femtosecond pulses chirping compensation by using one-dimensional compact multiple-defect photonic crystals

A. Belardini, A. Bosco, G. Leahu, M. Centini, E. Fazio, C. Sibilia, M. Bertolotti, S. Zhukovsky, and S. V. Gaponenko

Appl. Phys. Lett. 89, 031111 (2006); http://dx.doi.org/10.1063/1.2227075 (2 pages) | Cited 9 times

Online Publication Date: 18 July 2006

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Transmission properties of ultrashort pulses propagating through one-dimensional photonic crystals with multiple defects (cavities) were experimentally investigated. Coupling between multiple cavities is responsible for a wide resonance inside the photonic crystal gap suitable to distortion free propagation of 70 fs pulses at 800 nm. Geometry-induced anomalous dispersion across the resonance allows a compensation of 15% chirp preinduced on Fourier transform limited 70 fs pulses.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Qs Photonic bandgap materials

Heralding of telecommunication photon pairs with a superconducting single photon detector

Martin A. Jaspan, Jonathan L. Habif, Robert H. Hadfield, and Sae Woo Nam

Appl. Phys. Lett. 89, 031112 (2006); http://dx.doi.org/10.1063/1.2219411 (3 pages) | Cited 10 times

Online Publication Date: 19 July 2006

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Experiments involving entangled photon pairs created via spontaneous parametric down conversion typically use wavelengths in the visible regime. The extension of a photonic quantum information link to a fiber optical network requires that entangled pairs be created at telecommunication wavelengths (1550 nm), for which photon counting detector technology is inferior to visible detection, in particular, low coincidence detection rates of correlated-photon pairs. We demonstrate a correlated-photon pair measurement using the superconducting single photon detector in a heralding scheme that can be used to substantially improve the correlated-photon detection rate.
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42.50.Dv Quantum state engineering and measurements
03.67.Hk Quantum communication
42.65.Lm Parametric down conversion and production of entangled photons
85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
03.67.Mn Entanglement measures, witnesses, and other characterizations
03.65.Ud Entanglement and quantum nonlocality (e.g. EPR paradox, Bell's inequalities, GHZ states, etc.)

Carrier-envelope phase stabilization of high-contrast femtosecond laser pulses with a relativistic intensity

Kyung-Han Hong, Jongmin Lee, Bixue Hou, John A. Nees, Erik Power, and Gerard A. Mourou

Appl. Phys. Lett. 89, 031113 (2006); http://dx.doi.org/10.1063/1.2221877 (3 pages) | Cited 3 times

Online Publication Date: 20 July 2006

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We report on the generation of carrier-envelope phase (CEP)-stabilized pulses with a relativistic intensity and a high-contrast ratio. The CEP stabilization is achieved with a jitter of 0.95 rad from a 0.5 kHz femtosecond laser pulses with a focal intensity of 2.6×1018 W/cm2 and a picosecond contrast of 2.5×10−9. CEP noise analysis shows that the beam pointing at the pulse compressor is a dominant factor of the CEP fluctuation with our laser system.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking

Mirrorless lasing from nematic liquid crystals in the plane waveguide geometry without refractive index or gain modulation

L. M. Blinov, G. Cipparrone, P. Pagliusi, V. V. Lazarev, and S. P. Palto

Appl. Phys. Lett. 89, 031114 (2006); http://dx.doi.org/10.1063/1.2234316 (3 pages) | Cited 15 times

Online Publication Date: 20 July 2006

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Lasing from dye doped liquid crystals was observed in the nematic and isotropic phases in the plane waveguide geometry without mirrors and special modulation of the gain or refraction index by a holographic or other technique. The light was generated in a liquid crystal layer confined by two glasses with semitransparent electrodes, which formed an optical waveguide. A strong light amplification occurred along the length of a narrow stripe produced by the pump beam with the necessary feedback provided by the walls of the waveguide in the direction perpendicular to the stripe. The conditions for lasing were fulfilled for the lowest group velocity waveguide modes bouncing at the angles very close to the total reflection angle at the waveguide-glass interface. These modes leaked into the glasses were guided therein at very grazing angles and left the cell from its edges.
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42.55.-f Lasers
42.70.Df Liquid crystals
42.70.Hj Laser materials
61.30.-v Liquid crystals

Phase locking and spectral linewidth of a two-mode terahertz quantum cascade laser

A. Baryshev, J. N. Hovenier, A. J. L. Adam, I. Kašalynas, J. R. Gao, T. O. Klaassen, B. S. Williams, S. Kumar, Q. Hu, and J. L. Reno

Appl. Phys. Lett. 89, 031115 (2006); http://dx.doi.org/10.1063/1.2227624 (3 pages) | Cited 17 times

Online Publication Date: 20 July 2006

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We have studied the phase locking and spectral linewidth of an ∼ 2.7 THz quantum cascade laser by mixing its two lateral lasing modes. The beat signal at about 8 GHz is compared with a microwave reference by applying conventional phase lock loop circuitry with feedback to the laser bias current. Phase locking has been demonstrated, resulting in a narrow beat linewidth of less than 10 Hz. Under frequency stabilization we find that the terahertz line profile is essentially Lorentzian with a minimum linewidth of ∼ 6.3 kHz. Power dependent measurements suggest that this linewidth does not approach the Schawlow-Townes limit.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx

C. J. Oton, W. H. Loh, and A. J. Kenyon

Appl. Phys. Lett. 89, 031116 (2006); http://dx.doi.org/10.1063/1.2227637 (3 pages) | Cited 18 times

Online Publication Date: 20 July 2006

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Despite the observation by a number of groups of a strong luminescence sensitization effect of erbium ions by excitation exchange from silicon nanoclusters, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low for much of the material reported. In this work, we examine the evidence and point out that Er excited state absorption is the likely cause.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials

Terahertz detection with tunneling quantum dot intersublevel photodetector

X. H. Su, J. Yang, P. Bhattacharya, G. Ariyawansa, and A. G. U. Perera

Appl. Phys. Lett. 89, 031117 (2006); http://dx.doi.org/10.1063/1.2233808 (3 pages) | Cited 15 times

Online Publication Date: 21 July 2006

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The characteristics of a tunnel quantum dot intersublevel photodetector, designed for the absorption of terahertz radiation, are described. The absorption region consists of self-organized In0.6Al0.4As/GaAs quantum dots with tailored electronic properties. Devices exhibit spectral response from 20 to 75 μm ( ∼ 4 THz) with peak at ∼ 50 μm. The peak responsivity and specific detectivity of the device are 0.45 A/W and 108 cm Hz1/2/W, respectively, at 4.6 K for an applied bias of 1 V. Response to terahertz radiation is observed up to 150 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling

Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics

A. V. Krasavin, K. F. MacDonald, A. S. Schwanecke, and N. I. Zheludev

Appl. Phys. Lett. 89, 031118 (2006); http://dx.doi.org/10.1063/1.2234276 (3 pages) | Cited 9 times

Online Publication Date: 21 July 2006

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We report on a new type of composite metallic structure for nonlinear optics and nonlinear plasmonics, created by grain boundary penetration of gallium into an aluminum film. These composite films form mirrorlike interfaces with silica and show an exceptionally broadband phase-transition-based nonlinear response to optical excitation.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.-k Nonlinear optics
61.72.Mm Grain and twin boundaries
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
78.68.+m Optical properties of surfaces

Angular radiation pattern of electric dipoles embedded in a thin film in the vicinity of a dielectric half space

L. Luan, P. R. Sievert, B. Watkins, W. Mu, Z. Hong, and J. B. Ketterson

Appl. Phys. Lett. 89, 031119 (2006); http://dx.doi.org/10.1063/1.2234299 (3 pages) | Cited 3 times

Online Publication Date: 21 July 2006

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We report measurements on the angular radiation pattern from an array of dye molecules embedded in a polymethylmethacrylate film deposited on a dielectric hemispherical lens. The radiation pattern is both highly structured and directed, with most of the power being radiated into the media having the higher refractive index. We also present a simulation of the far-field radiation pattern of a dipole embedded in a thin dielectric layer, which apparently has not been investigated before. The simulation matches the experimental results rather well.
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78.66.Qn Polymers; organic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Programmable optical wave form shaper on a microchip

Kabir Udeshi, Kai-Hsiu Liao, Long Que, Yogesh B. Gianchandani, and Almantas Galvanauskas

Appl. Phys. Lett. 89, 031120 (2006); http://dx.doi.org/10.1063/1.2222247 (3 pages)

Online Publication Date: 21 July 2006

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This letter reports a device for in-fiber programmable optical pulse shaping, that consists of a chirped fiber grating and a micromachined array of Si actuators integrated on a 1×5 mm2 chip. The pulse spectrum is longitudinally imaged inside a chirped fiber Bragg grating, thus permitting spectral components to be accessed inside the fiber by individual actuators. The demonstration of controlled optical pulse spectrum and temporal-width changes shows that the silicon microactuators, fabricated using a standard lithographic process, can tune the local refractive index of the grating by inducing localized fiber core strain gradients at a rate of >1 μStrain per 1 mW of actuator driving power.
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42.82.Gw Other integrated-optical elements and systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Dj Gratings
42.81.Wg Other fiber-optical devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Symmetric H state lifetime in splayed nematic liquid crystal devices

P. D. Brimicombe and E. P. Raynes

Appl. Phys. Lett. 89, 031121 (2006); http://dx.doi.org/10.1063/1.2234308 (3 pages) | Cited 7 times

Online Publication Date: 21 July 2006

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The dynamic behavior of splayed nematic devices during sudden voltage application is investigated in detail, both experimentally and through simulation. The symmetric H state forms transiently under such drive conditions, and we show that the lifetime of this state is strongly dependent on the liquid crystal material parameters and the applied voltage. The decay of this state to the asymmetric H states is shown to occur via domain growth: isolated regions of the device form the asymmetric H states, and these domains then grow, taking over the areas containing the symmetric H state.
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42.79.Kr Display devices, liquid-crystal devices

Highly stable temperature characteristics of InGaN blue laser diodes

H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park

Appl. Phys. Lett. 89, 031122 (2006); http://dx.doi.org/10.1063/1.2234738 (3 pages) | Cited 15 times

Online Publication Date: 21 July 2006

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We report stable temperature characteristics of threshold current and output power in InGaN blue laser diodes emitting around 450 nm. The threshold current is changed by <3 mA in operation temperature range from 20 to 80 °C, and even negative characteristic temperature is observed in a certain temperature range. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, which is deduced from the simulation of carrier density and optical gain. In addition, slope efficiency is also maintained well and wall plug efficiency is even improved as temperature increases.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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