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24 Jul 2006

Volume 89, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 89, 041105 (2006); http://dx.doi.org/10.1063/1.2234591 (3 pages)

Alireza Khalili, Hopil Bae, and James S. Harris
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Detection mechanism for ferroelectric domain boundaries with lateral force microscopy

Tobias Jungk, Ákos Hoffmann, and Elisabeth Soergel

Appl. Phys. Lett. 89, 042901 (2006); http://dx.doi.org/10.1063/1.2234303 (3 pages) | Cited 17 times

Online Publication Date: 24 July 2006

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The contrast mechanism for the visualization of ferroelectric domain boundaries with lateral force microscopy is generally assumed to be caused by mechanical deformation of the sample due to the converse piezoelectric effect. We show, however, that electrostatic interactions between the charged tip and the electric fields arising from the surface polarization charges dominate the contrast mechanism. This explanation is sustained by quantitative analysis of the measured forces as well as by comparative measurements on lithium niobate and potassium titanyl phosphate.
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77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
77.22.Ej Polarization and depolarization

Characteristics of sputtered Hf1−xSixO2/Si/GaAs gate stacks

M. H. Zhang, I. J. Ok, H. S. Kim, F. Zhu, T. Lee, G. Thareja, L. Yu, and Jack C. Lee

Appl. Phys. Lett. 89, 042902 (2006); http://dx.doi.org/10.1063/1.2234304 (3 pages) | Cited 14 times

Online Publication Date: 24 July 2006

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Sputtered Hf1−xSixO2/Si/n-type GaAs gate stacks with x = 0, 30%, and 47% have been characterized using x-ray photoelectron spectroscopy, photoluminescence, and capacitance-voltage (CV) measurements. Incorporating Si into HfO2 improves both frequency dispersion and hysteresis. Compared to HfO2, 30% and 47% Hf1−xSixO2 have a lower interface state density and stronger photoluminescence intensity. At the same capacitance equivalent thickness, HfO2 and 30% Hf1−xSixO2 have a smaller leakage current density than 47% Hf1−xSixO2. It is concluded that Hf1−xSixO2 with the composition near 30% is a good high-k dielectric candidate for metal-oxide-semiconductor device application.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.55.-m Photoluminescence, properties and materials
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
79.60.Jv Interfaces; heterostructures; nanostructures
77.55.-g Dielectric thin films

Dielectric tunability of (110) oriented barium strontium titanate epitaxial films on (100) orthorhombic substrates

G. Akcay, I. B. Misirlioglu, and S. P. Alpay

Appl. Phys. Lett. 89, 042903 (2006); http://dx.doi.org/10.1063/1.2234839 (3 pages) | Cited 7 times

Online Publication Date: 25 July 2006

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We develop a thermodynamic model to determine the polarization, dielectric permittivity, and tunability of epitaxial ferroelectric films on orthorhombic substrates. In particular, we study the film thickness dependence of the tunability in epitaxial (110) Ba0.6Sr0.4TiO3 films on (001) NdGaO3 substrates. The analysis takes into account the thickness dependence of the internal stress state due to the anisotropic relaxation of epitaxial stresses through the formation of misfit dislocations along the two in-plane directions. We predict significant improvement in the tunability along both in-plane and out-of-plane directions of Ba0.6Sr0.4TiO3 films with increasing film thickness compared to the similar films on cubic substrates.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
68.60.Bs Mechanical and acoustical properties

First-principles modeling of resistance switching in perovskite oxide material

Sang Ho Jeon, Bae Ho Park, Jaichan Lee, Bora Lee, and Seungwu Han

Appl. Phys. Lett. 89, 042904 (2006); http://dx.doi.org/10.1063/1.2234840 (3 pages) | Cited 36 times

Online Publication Date: 25 July 2006

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We report a first-principles study on SrRuO3/SrTiO3 interface in the presence of the oxygen vacancy. While the oxygen vacancy on the side of SrTiO3 significantly lowers the Schottky barrier height, the oxygen vacancy close to the interface or inside the metallic electrode results in a Schottky barrier comparable to that of the clean interface. Based on these results, we propose a model for resistance-switching phenomena in perovskite oxide∕metal interfaces where electromigration of the oxygen vacancy plays a key role. Our model provides a consistent explanation of a recent experiment on resistance switching in SrRuO3/Nb:SrTiO3 interface.
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73.30.+y Surface double layers, Schottky barriers, and work functions
66.30.Qa Electromigration

Relaxor behavior of K0.5La0.5Bi2Nb2O9 ceramics

C. Karthik, N. Ravishankar, K. B. R. Varma, Mario Maglione, R. Vondermuhll, and J. Etourneau

Appl. Phys. Lett. 89, 042905 (2006); http://dx.doi.org/10.1063/1.2234848 (3 pages) | Cited 18 times

Online Publication Date: 25 July 2006

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K0.5La0.5Bi2Nb2O9, a relaxor, was synthesized and the structural studies confirmed it to be an n = 2 member of the Aurivillius oxides. The ½{h00} and ½{hk0} types of superlattice reflections in the electron diffraction patterns reflected the presence of ordered polar regions. A broad dielectric peak with frequency dependent dielectric maximum temperature was observed. The dielectric relaxation obeyed the Vogel-Fulcher relation wherein Ea = 0.04 eV, Tf = 428 K,and ωo = 1010 Hz. The diffuseness parameter γ = 2.003 established the relaxor nature and it was attributed to the A-site cationic disorder. The piezoelectric d31 coefficient was 0.5 pC/N at 300 K and 2 pC/N at 480 K.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.80.-e Ferroelectricity and antiferroelectricity
77.65.-j Piezoelectricity and electromechanical effects
77.22.Ch Permittivity (dielectric function)

High capacity oxide/ferroelectric/oxide stacks for on-chip charge storage

S. Zhong, S. P. Alpay, and J. V. Mantese

Appl. Phys. Lett. 89, 042906 (2006); http://dx.doi.org/10.1063/1.2236265 (3 pages) | Cited 4 times

Online Publication Date: 25 July 2006

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A thermodynamic model coupled with an electrostatic analysis of dielectric-ferroelectric-dielectric sandwich structures shows that high capacitance densities can be achieved when the total dielectric thickness reaches a critical fraction. For such cases, the induced polarization in the linear dielectrics (e.g., SiO2, Ta2O5, HfO2, Al2O3, and ZrO2) increases the overall permittivity until the internal electric field in the ferroelectric layer suppresses the spontaneous polarization of the ferroelectric. Beyond this critical fraction, the ferroelectric layer can no longer induce polarization in the dielectric layers. We specifically determine the critical fraction required for Ba1−xSrxTiO3 (0<x ⩽ 0.2) and Pb1−xZrxTiO3 (0<x ⩽ 0.5) solid solutions.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
65.40.G- Other thermodynamical quantities
77.22.Ej Polarization and depolarization

Thermodynamics of polydomain ferroelectric bilayers and graded multilayers

Alexander L. Roytburd and Julia Slutsker

Appl. Phys. Lett. 89, 042907 (2006); http://dx.doi.org/10.1063/1.2220487 (3 pages) | Cited 17 times

Online Publication Date: 27 July 2006

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The equilibrium domain structure and its evolution under an electric field in ferroelectric bilayers and graded multilayers are considered. The equilibrium bilayer is self-poled and contains single-domain and polydomain (with 180° domains) layers. The polarization of a graded multilayer proceeds by movement of wedge-like domains as a result of progressive transformation of polydomain layers to a single-domain state. The theory provides the principal explanation of dielectric behavior of graded ferroelectric films.
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77.55.-g Dielectric thin films
65.40.G- Other thermodynamical quantities
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Hierarchical micro-/nanoscale domain structure in MC phase of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 single crystal

H. Wang, J. Zhu, N. Lu, A. A. Bokov, Z.-G. Ye, and X. W. Zhang

Appl. Phys. Lett. 89, 042908 (2006); http://dx.doi.org/10.1063/1.2240740 (3 pages) | Cited 38 times

Online Publication Date: 28 July 2006

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A hierarchical micro-/nanoscale domain structure is revealed in MC phase of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 single crystal near the morphotropic phase boundary by combination of analytical electron microscopy and polarized light microscopy. The hierarchical domain structure is a self-assembling of nanodomains with tetragonal structure, submicrodomains appearing as monoclinic, and microdomains exhibiting the same monoclinic state due to an average effect. The outstanding piezoelectric properties may result from the cooperative response of the hierarchical micro-/nanoscale domain structure.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
81.16.Dn Self-assembly
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