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24 Jul 2006

Volume 89, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 041105 (2006); http://dx.doi.org/10.1063/1.2234591 (3 pages)

Alireza Khalili, Hopil Bae, and James S. Harris
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Radiational defect production in porous solid states

N. N. Turaeva

Appl. Phys. Lett. 89, 041901 (2006); http://dx.doi.org/10.1063/1.2168744 (2 pages)

Online Publication Date: 24 July 2006

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There are additional traps for displaced interstitial atoms in irradiated porous materials. Accounting for these traps leads to different expressions for radiation defect production probability, cross-section, and displacement energy.
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61.80.-x Physical radiation effects, radiation damage
61.72.J- Point defects and defect clusters

Fabrication of two-dimensional coupled photonic crystal resonator arrays by holographic lithography

G. Q. Liang, W. D. Mao, Y. Y. Pu, H. Zou, H. Z. Wang, and Z. H. Zeng

Appl. Phys. Lett. 89, 041902 (2006); http://dx.doi.org/10.1063/1.2234743 (3 pages) | Cited 9 times

Online Publication Date: 24 July 2006

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We demonstrate the holographic design and fabrication of two-dimensional coupled photonic crystal resonator arrays, which are composed of hexagonal cavities tiled together in a triangular lattice. Band structure analysis reveals that the inverse structure of the fabricated template supports monopole defect mode in a photonic band gap of TM polarization. Our results show the practical importance of holographic lithography in the fabrication of photonic component arrays.
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42.70.Qs Photonic bandgap materials
42.79.-e Optical elements, devices, and systems
42.40.Kw Holographic interferometry; other holographic techniques
42.15.Eq Optical system design

Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

Arpan Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra

Appl. Phys. Lett. 89, 041903 (2006); http://dx.doi.org/10.1063/1.2234841 (3 pages) | Cited 41 times

Online Publication Date: 25 July 2006

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We report on the use of in-situ SiNx nanomask for defect reduction in nonpolar a-plane GaN films, grown by metal-organic chemical vapor deposition. High-resolution x-ray diffraction analysis revealed that there was a monotonic reduction in the full width at half maximum, both on-axis and off-axis, with the increase in the SiNx thickness. Atomic force microscopy images revealed a significant decrease in the root-mean-square roughness and the density of submicron pits. Cross-section and plan-view transmission electron microscopy on the samples showed that the stacking fault density decreased from 8×105 to 3×105 cm−1 and threading dislocation density decreased from 8×1010 to 9×109 cm−2. Room temperature photoluminescence measurement revealed that the band-edge emission intensity increased with the insertion of the SiNx layer, which suggests reduction in the nonradiative recombination centers.
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81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001)

F. Arciprete, E. Placidi, V. Sessi, M. Fanfoni, F. Patella, and A. Balzarotti

Appl. Phys. Lett. 89, 041904 (2006); http://dx.doi.org/10.1063/1.2234845 (3 pages) | Cited 20 times

Online Publication Date: 25 July 2006

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The two- to three-dimensional growth mode transition in the InAs/GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
64.60.Q- Nucleation

Clarification of Mn–Zn interaction for InMnP:Zn epilayer by photoluminescence and x-ray photoelectron spectroscopy

Yoon Shon, Sejoon Lee, H. C. Jeon, S.-W. Lee, D. Y. Kim, T. W. Kang, Eun Kyu Kim, Chong S. Yoon, C. K. Kim, Y. J. Park, and Jeoung Ju Lee

Appl. Phys. Lett. 89, 041905 (2006); http://dx.doi.org/10.1063/1.2236201 (3 pages) | Cited 3 times

Online Publication Date: 25 July 2006

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Transition related to the Mn–Zn interaction was observed in photoluminescence (PL) study of the InMnP:Zn epilayer and the peak position blueshifted with increasing Mn concentration. X-ray photoelectron spectroscopy was used to clarify the blueshift of the PL peak. The binding energy shifts of Mn 2p and Zn 2p core levels indicative of the interaction between Mn and Zn were observed. This mutual interaction between Mn 2p and Zn 2p agrees with the result that the Mn-related transition in InMnP:Zn codoped with Zn is shifted to the higher energy region in comparison with InMnP without additional doping of Zn.
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75.50.Pp Magnetic semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
79.60.Dp Adsorbed layers and thin films
73.20.At Surface states, band structure, electron density of states

Influence of AlN layers on the interface stability of HfO2 gate dielectric stacks

Melody P. Agustin, Husam Alshareef, Manuel A. Quevedo-Lopez, and Susanne Stemmer

Appl. Phys. Lett. 89, 041906 (2006); http://dx.doi.org/10.1063/1.2236264 (3 pages) | Cited 3 times

Online Publication Date: 25 July 2006

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The influence of thick ( ∼ 10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO2 dielectrics was investigated. Annealing caused a reduction of the interfacial SiO2 at the Si interface. At high temperatures ( ∼ 1000 °C) a silicide reaction was observed at the HfO2/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO2, and the consequences for the electrical properties are discussed.
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77.55.-g Dielectric thin films
68.35.Ct Interface structure and roughness
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing

High structural quality InN/In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy

Tatsuo Ohashi, Petter Holmström, Akihiko Kikuchi, and Katsumi Kishino

Appl. Phys. Lett. 89, 041907 (2006); http://dx.doi.org/10.1063/1.2221869 (3 pages) | Cited 16 times

Online Publication Date: 26 July 2006

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InN/In0.75Ga0.25N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements showed evidence of growth of atomically smooth and sharp interface and good periodicity. Room-temperature photoluminescence emissions from InN quantum wells were observed at the wavelength range from 1.59 to 1.95 μm by changing the well thickness. The unstrained valence band offset of InN/GaN was estimated to be ΔEv = 0.9 eV by comparing the experimental transition wavelengths of the MQWs and a theoretical calculation considering strain effects and built-in, mainly piezoelectric, fields.
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81.07.St Quantum wells
68.65.Fg Quantum wells
78.67.De Quantum wells
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Dq Plasma-based ion implantation and deposition
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Stress dependence of F+-center cathodoluminescence of sapphire

Giuseppe Pezzotti, Keshu Wan, Maria Chiara Munisso, and Wenliang Zhu

Appl. Phys. Lett. 89, 041908 (2006); http://dx.doi.org/10.1063/1.2234307 (3 pages) | Cited 9 times

Online Publication Date: 26 July 2006

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The rate of spectral shift with applied biaxial stress [piezospectroscopic (PS) coefficient] was determined for the electron-stimulated F+ luminescence emitted from the c plane of sapphire (α-Al2O3) as Π = 1.18±0.03 nm/GPa. The PS dependence could be determined to a degree of precision by applying a controlled biaxial stress field to a sapphire thin plate using a ball-on-ring biaxial bending jig and by measuring in situ the spectral shift of the emitted cathodoluminescence (CL) F+ band in a field-emission-gun scanning electron microscope. The ball-on-ring PS calibration results open the possibility of applying CL/PS assessments to directly determine unknown residual stress fields in sapphire-based devices using the optical activity of its oxygen vacancies.
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78.60.Hk Cathodoluminescence, ionoluminescence
77.65.-j Piezoelectricity and electromechanical effects
61.72.J- Point defects and defect clusters

Core-shell particle model for optical transparency in glass ceramics

Andrew Edgar

Appl. Phys. Lett. 89, 041909 (2006); http://dx.doi.org/10.1063/1.2234722 (3 pages) | Cited 6 times

Online Publication Date: 26 July 2006

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The light scattering from particles in a glass ceramic is calculated for a particle model comprising a crystalline core and a surrounding shell, created by nucleation and diffusive processes from the original homogeneous glass, with diffusing atoms limited to the core-shell volume. The scatterings from core and shell are found to cancel in first order for small particles within the approximations of the Rayleigh-Debye theory. The residual scattering varies as the inverse eighth power of wavelength and is most pronounced in the backscatter geometry.
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42.70.Ce Glasses, quartz
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Acceptor segregation and nonlinear current-voltage characteristics in H2-sintered SrTiO3

Seong-Min Wang and Suk-Joong L. Kang

Appl. Phys. Lett. 89, 041910 (2006); http://dx.doi.org/10.1063/1.2236212 (3 pages) | Cited 1 time

Online Publication Date: 26 July 2006

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The current-voltage characteristics with acceptor segregation at grain boundaries have been investigated in H2-sintered SrTiO3. Al-added SrTiO3 was sintered in H2 and then annealed in air for selective oxidation of grain boundaries. The samples showed nonlinear current-voltage characteristics, and both the breakdown voltage and nonlinearity coefficient increased with Al concentration. An energy dispersive spectroscopy analysis revealed that Al ions were segregated at the grain boundary, suggesting the formation of Schottky barriers at the boundary. The present results thus point toward the possibility of modifying the grain boundary composition in SrTiO3 as well as fabricating effective switching devices by H2 sintering.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
72.80.Sk Insulators
61.72.Mm Grain and twin boundaries
64.75.-g Phase equilibria
77.22.Jp Dielectric breakdown and space-charge effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Nanoengineering mechanically robust aerogels via control of foam morphology

S. O. Kucheyev, T. F. Baumann, C. A. Cox, Y. M. Wang, J. H. Satcher, A. V. Hamza, and J. E. Bradby

Appl. Phys. Lett. 89, 041911 (2006); http://dx.doi.org/10.1063/1.2236222 (3 pages) | Cited 8 times

Online Publication Date: 26 July 2006

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Potential of aerogels for technological applications is often limited by their poor mechanical properties. Here, we demonstrate that alumina aerogel monoliths with excellent mechanical properties can be made by controlling the crystallographic phase, shape, and size of nanoligaments. In particular, we show that thermal processing of aerogels with a morphology of interconnected nanoleaflets causes dehydration and associated curling of the nanoleaflets, resulting in a dramatic improvement of mechanical properties. This study shows an effective way to control mechanical properties of the nanoporous solids that can be synthesized with ligaments having a quasi-two-dimensional shape, such as platelets, ribbons, or leaflets.
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82.70.Gg Gels and sols
81.16.-c Methods of micro- and nanofabrication and processing
61.43.Gt Powders, porous materials
82.70.Rr Aerosols and foams
61.46.Hk Nanocrystals

Shape memory surfaces

Yijun Zhang, Yang-Tse Cheng, and David S. Grummon

Appl. Phys. Lett. 89, 041912 (2006); http://dx.doi.org/10.1063/1.2222173 (3 pages) | Cited 12 times

Online Publication Date: 27 July 2006

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Temperature-controlled reversible surface protrusions can be made on NiTi shape memory alloys and thin films as a result of indentation induced two-way shape memory effect. First, spherical indents or scratches are made on the surface of a NiTi alloy in its martensite phase. Second, the indented or scratched surface is planarized to restore a flat surface. Reversible circular and line protrusions are produced by altering the temperature to drive the martensite to austenite phase transformation. This phenomenon can be exploited for a wide range of optical, tribological, and microelectromechanical device applications.
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68.47.De Metallic surfaces
81.40.Lm Deformation, plasticity, and creep
81.30.Kf Martensitic transformations
64.70.K- Solid-solid transitions
62.20.F- Deformation and plasticity
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Selective surface purification via crater eruption under pulsed electron beam irradiation

Jianxin Zou, Kemin Zhang, Chuang Dong, Ying Qin, Shengzhi Hao, and Thierry Grosdidier

Appl. Phys. Lett. 89, 041913 (2006); http://dx.doi.org/10.1063/1.2234306 (3 pages) | Cited 25 times

Online Publication Date: 27 July 2006

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This letter reports an interesting phenomenon associated with the high-current pulsed electron beam treatment:selective surface purification. The treatment induces crater eruptions that preferentially occur at irregular composition and structure sites. The eruptions of second phase inclusions naturally lead to the purification and homogenization of the melted surface layer. This improves significantly the corrosion resistance of NiTi and 316L alloys.
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81.65.Kn Corrosion protection
61.82.Bg Metals and alloys
61.80.Fe Electron and positron radiation effects

Singlet excimer electroluminescence within N,N′-di-1-naphthalenyl-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine based diodes

Paolo A. Losio, Rizwan U. A. Khan, Peter Günter, Boon Kar Yap, Jo S. Wilson, and Donal D. C. Bradley

Appl. Phys. Lett. 89, 041914 (2006); http://dx.doi.org/10.1063/1.2236217 (3 pages) | Cited 8 times

Online Publication Date: 27 July 2006

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The authors report the fabrication of organic light-emitting diodes based on N,N′-di-1-naphthalenyl-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine (NPB) that emit via singlet excimer states. When the film deposition rate of NPB is reduced from 17 to 1 nm/min, they observe a reduction in intensity of the photoluminescence peak at 437 nm and the evolution of a new, broader peak at 503 nm. From optical absorption and time resolved photoluminescence data the authors attribute this new peak to singlet excimer emission. The authors demonstrate green electroluminescence from organic diodes that utilize this effect. The possible morphological variations resulting in the monomer to excimer transition are discussed.
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78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.55.Kz Solid organic materials
78.47.-p Spectroscopy of solid state dynamics

Thermal emission by metallic photonic crystal slabs

Jones T. K. Wan and C. T. Chan

Appl. Phys. Lett. 89, 041915 (2006); http://dx.doi.org/10.1063/1.2236284 (3 pages) | Cited 2 times

Online Publication Date: 28 July 2006

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Ordinary metallic photonic crystals have photonic band gaps, in which the density of states is strongly modified. Thermal emission of photons can be suppressed or enhanced accordingly. We consider that the thermal emission characteristics of metallic photonic crystal slab vary with different thicknesses, which in the thick limit approaches that of a photonic crystal and in the thin limit approaches that of a textured surface. We find that a thick tungsten photonic crystal suppresses emission in a specific range, while a thin slab suppresses low frequency emission.
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42.70.Qs Photonic bandgap materials
71.20.Gj Other metals and alloys

Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process

Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko Nakamae

Appl. Phys. Lett. 89, 041916 (2006); http://dx.doi.org/10.1063/1.2240111 (3 pages) | Cited 3 times

Online Publication Date: 28 July 2006

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Crystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5 °C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased with an increase in the annealing temperature. For the annealed wafers, defect-related PL signals were observed at around 0.82, 0.88, 0.95, and 1.0 eV, which varied according to the annealing temperature and the SiGe thickness. They were also correlated to dislocation-related defects by transmission electron microscopy.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
68.55.A- Nucleation and growth
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing

Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes

M. Pavesi, M. Manfredi, F. Rossi, M. Meneghini, E. Zanoni, U. Zehnder, and U. Strauss

Appl. Phys. Lett. 89, 041917 (2006); http://dx.doi.org/10.1063/1.2240309 (3 pages) | Cited 4 times

Online Publication Date: 28 July 2006

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Traps govern the temperature dependence of current in III-nitride quantum heterostructures, but frequently electrical measurements result unable to identify how many and what kind of defects take part in the conduction. The present work shows how a combined electrical and optical characterization in temperature can detect localized defects involved in injection mechanisms in InGaN/AlGaN/GaN blue light lmitting diodes. At least two different traps assisting the carrier injection by tunneling and playing an active role below and above 175 K, respectively, are identified in or nearby the active layers.
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85.60.Jb Light-emitting devices

Detection and mobility of hafnium in SiO2

Dmitri O. Klenov, Thomas E. Mates, and Susanne Stemmer

Appl. Phys. Lett. 89, 041918 (2006); http://dx.doi.org/10.1063/1.2240743 (3 pages) | Cited 6 times

Online Publication Date: 28 July 2006

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High-angle annular dark-field imaging in scanning transmission electron microscopy and x-ray photoelectron spectroscopy were used to investigate thermal SiO2 layers doped with Hf by ion implantation. Hf was mobile under the focused electron beam in the as-implanted samples. After annealing for 5 min at 1200 °C, clusters of crystalline HfO2 were observed that were a few nanometers in size and surrounded by residual Hf that had remained trapped in the SiO2. Hf was not mobile under the electron beam in the annealed samples. Further annealing caused an expansion of the SiO2 that was damaged by ion implantation. Hf rearrangement was confined to the ion beam damaged regions of the SiO2 layer. No diffusion of Hf into the undamaged SiO2 was observed. The implications of the results for complementary metal-oxide-semiconductor transistors with HfO2 gate dielectrics are discussed.
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68.37.Lp Transmission electron microscopy (TEM)
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
61.72.up Other materials
61.80.Jh Ion radiation effects
61.82.Ms Insulators
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Formation of fivefold deformation twins in nanocrystalline face-centered-cubic copper based on molecular dynamics simulations

A. J. Cao and Y. G. Wei

Appl. Phys. Lett. 89, 041919 (2006); http://dx.doi.org/10.1063/1.2243958 (3 pages) | Cited 26 times

Online Publication Date: 28 July 2006

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Fivefold deformation twins were reported recently to be observed in the experiment of the nanocrystalline face-centered-cubic metals and alloys. However, they were not predicted previously based on the molecular dynamics (MD) simulations and the reason was thought to be a uniaxial tension considered in the simulations. In the present investigation, through introducing pretwins in grain regions, using the MD simulations, the authors predict out the fivefold deformation twins in the grain regions of the nanocrystal grain cell, which undergoes a uniaxial tension. It is shown in their simulation results that series of Shockley partial dislocations emitted from grain boundaries provide sequential twining mechanism, which results in fivefold deformation twins.
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81.05.Bx Metals, semimetals, and alloys
81.07.Bc Nanocrystalline materials
61.72.Mm Grain and twin boundaries
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Origin of cracking in nanoscale Cu/Ta multilayers

G. P. Zhang, X. F. Zhu, J. Tan, and Y. Liu

Appl. Phys. Lett. 89, 041920 (2006); http://dx.doi.org/10.1063/1.2244015 (3 pages) | Cited 4 times

Online Publication Date: 28 July 2006

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Cracking behaviors in nanoscale Cu/Ta multilayers bonded to polyimide substrates have been investigated by uniaxial tensile tests. Experimental results show that cracks originate from the localized deformation regions associated with aligned grain boundaries. Microscopical observations suggest that the alignment of the grain boundaries is caused by local grain boundary sliding and grain rotation, which resulted in the in-plane and out-of-plane cooperative movements of the grains in the multilayers. From the localized damage regions, shear fracture in the through-thickness direction occurred in the nanoscale Cu/Ta multilayer.
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81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys
68.65.Ac Multilayers
62.25.-g Mechanical properties of nanoscale systems
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials

Effect of temperature on mechanical behavior of Zr-based bulk metallic glasses

Hongqi Li, Kaixiang Tao, Cang Fan, Peter K. Liaw, and Hahn Choo

Appl. Phys. Lett. 89, 041921 (2006); http://dx.doi.org/10.1063/1.2245222 (3 pages) | Cited 27 times

Online Publication Date: 28 July 2006

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The compressive tests and Vickers microhardness measurements were conducted on the as-cast Zr-based bulk metallic glasses at different temperatures. The results show that the strength is proportional to the temperature. Furthermore, at cryogenic temperatures, more shear bands were observed near the fracture surface and surrounding the indentation marks. The analysis suggests that both the formation and propagation of the shear bands are thermally activated processes.
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81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
81.40.Gh Other heat and thermomechanical treatments
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
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