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7 Aug 2006

Volume 89, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 062501 (2006); http://dx.doi.org/10.1063/1.2259813 (3 pages)

Sangkook Choi, Ki-Suk Lee, and Sang-Koog Kim
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Absolute photoluminescence quantum yield enhancement of poly(2-methoxy 5-[2′-ethylhexyloxy]-p-phenylenevinylene)

F. Marchioni, R. Chiechi, S. Patil, F. Wudl, Y. Chen, and J. Shinar

Appl. Phys. Lett. 89, 061101 (2006); http://dx.doi.org/10.1063/1.2335365 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2006

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A twofold absolute photoluminescence quantum yield (PLQY) enhancement of poly(2-methoxy 5-[2′-ethylhexyloxy]-p-phenylenevinylene) (MEH-PPV) is demonstrated by simple preparation of films where the polymer is blended with the small organic molecule 7,8,10-triphenylfluoranthene (3PF). The photophysical investigation of this particular energy transfer process was carried out using steady state absorption/luminescence spectroscopy and optically detected magnetic resonance techniques. The enhanced PLQY is attributed to direct sensitization of the intrachain emitting state of MEH-PPV by energy transfer from 3PF.
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78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials

Signal-to-noise ratio improvement of photon counting using wavelength modulation spectroscopy

Tao Huang, Shuangli Dong, Xujin Guo, Liantuan Xiao, and Suotang Jia

Appl. Phys. Lett. 89, 061102 (2006); http://dx.doi.org/10.1063/1.2335517 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2006

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Photon counting has been widely used in weak light detection. However, the low signal-to-noise ratio (math, N is the mean counts) significantly limits the detection sensitivity. In this letter, we present a method that uses wavelength modulation spectroscopy to improve the signal-to-noise ratio of photon counting. Five times improvement of signal-to-noise ratio in 1 Hz bandwidth at best has been obtained in 2f harmonic detection.
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42.50.Ar Photon statistics and coherence theory
07.60.Rd Visible and ultraviolet spectrometers

Field induced photoluminescence quenching and enhancement of CdSe nanocrystals embedded in SiO2

A. W. Achtstein, H. Karl, and B. Stritzker

Appl. Phys. Lett. 89, 061103 (2006); http://dx.doi.org/10.1063/1.2335591 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2006

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The authors describe the operation of an electro-optical photoluminescence quenching device based on CdSe nanoclusters formed using sequential ion implantation of Cd+ and Se+ in thermally grown SiO2 on silicon. A sample geometry consisting of a semitransparent gold electrode on top and an ohmic contact to the p-doped Si on the reverse side of the device was chosen to apply high electric fields. Under high field strength an effective photoluminescence quenching and enhancement with a dynamical range of more than one order in magnitude have been observed. Field induced Stark shift has not been seen most probably due to polarization effects.
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42.79.-e Optical elements, devices, and systems
61.72.uj III-V and II-VI semiconductors

Energy transfer between colloidal semiconductor nanocrystals in an optical microcavity

Li Guo, Todd D. Krauss, Carl B. Poitras, Michal Lipson, Xiaowei Teng, and Hong Yang

Appl. Phys. Lett. 89, 061104 (2006); http://dx.doi.org/10.1063/1.2335632 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2006

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The authors have studied nonradiative energy transfer between semiconductor nanocrystals (NCs) placed in a Fabry-Pérot microcavity. The spectrally integrated fluorescence from a monolayer of single sized NCs in the cavity is enhanced by a factor of 4.8 compared to free space. For a monolayer of mixed sized NCs, the acceptor NC fluorescence intensity is enhanced by an additional factor of 2.7 due to energy transfer processes. When the cavity mode is resonant with the acceptor NC fluorescence emission maximum, donor NC emission is completely suppressed, providing a narrow spectral output.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
82.70.Dd Colloids
78.55.-m Photoluminescence, properties and materials

Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy

F. Hopfer, I. Kaiander, A. Lochmann, A. Mutig, S. Bognar, M. Kuntz, U. W. Pohl, V. A. Haisler, and D. Bimberg

Appl. Phys. Lett. 89, 061105 (2006); http://dx.doi.org/10.1063/1.2336272 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2006

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Ground state lasing of electrically driven vertical-cavity surface-emitting lasers with a quantum-dot (QD) gain medium grown using metal-organic vapor phase epitaxy was realized. The devices use stacked InGaAs QD layers, placed in the field intensity antinodes of the cavity formed by selectively oxidized distributed Bragg reflectors. Devices with 3×3 QD layers demonstrate at 20 °C a cw output power of 1.45 mW at 1.1 μm emission wavelength. The peak external efficiency was 45%, limited by lateral carrier spreading within the 4λ cavity and a reduction of the internal efficiency above 60 °C. A minimum threshold current of 85 μA was obtained from a device with a 1 μm aperture.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Demonstration of two-dimensional fluidic lens for integration into microfluidic flow cytometers

Jessica Godin, Victor Lien, and Yu-Hwa Lo

Appl. Phys. Lett. 89, 061106 (2006); http://dx.doi.org/10.1063/1.2266887 (3 pages) | Cited 22 times

Online Publication Date: 8 August 2006

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The focusing capabilities of a two-dimensional fluid-filled lens microfabricated in an optical polymer are demonstrated. The illumination path is visualized by localized scattering centers. Functionality for flow cytometry applications is demonstrated by localization of the excitation of large-angle scatter. Integrated in-plane optical systems offer simple, compact, and inexpensive alternatives to external optics, as well as the potential for increased detection efficiency and low-power operation.
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42.79.Bh Lenses, prisms and mirrors
47.61.-k Micro- and nano- scale flow phenomena
42.70.Jk Polymers and organics
47.63.-b Biological fluid dynamics
87.17.-d Cell processes
87.80.-y Biophysical techniques (research methods)

Optical gain properties of InAs/InAlGaAs/InP quantum dash structures with a spectral gain bandwidth of more than 300 nm

A. Somers, W. Kaiser, J. P. Reithmaier, A. Forchel, M. Gioaninni, and I. Montrosset

Appl. Phys. Lett. 89, 061107 (2006); http://dx.doi.org/10.1063/1.2266994 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2006

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The excellent wavelength tuning properties of InP-based quantum dash (QDash) layer structures were used to realize ultrawide-gain bandwidth lasers for applications in the 1.55 μm telecommunication range. To expand the attainable gain bandwidth six QDash layers with three different emission wavelengths were combined in a laser structure. Broad area laser evaluation reveals good device performance. Within the optical telecommunication band at 1.55 μm a gain bandwidth of more than 300 nm could be experimentally confirmed, which is in good quantitative agreement with theoretical predictions by taking into account an inhomogeneous carrier distribution between the different dash layers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Folding field emission from GaN onto polymer microtip array by femtosecond pulsed laser deposition

X. L. Tong, D. S. Jiang, Y. Li, Z. M. Liu, and M. Z. Luo

Appl. Phys. Lett. 89, 061108 (2006); http://dx.doi.org/10.1063/1.2335964 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2006

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Microtip field-emitter array (FEA) has been formed using femtosecond pulsed laser deposited GaN thin film onto polymer microtip array. X-ray diffraction, scanning electronic microscope, and field emission measurements were carried out to analyze the profile, crystalline structures, and field emission properties of the emission array. The results indicate that the GaN thin film deposited on a like-conical-type polymer microtip array is hexagonal polycrystalline, and the GaN microtip FEA has uniform size, sharp tip, and well-defined profile, which shows a field emission characteristics.
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85.45.Db Field emitters and arrays, cold electron emitters
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Energy harvesting in silicon Raman amplifiers

S. Fathpour, K. K. Tsia, and B. Jalali

Appl. Phys. Lett. 89, 061109 (2006); http://dx.doi.org/10.1063/1.2335625 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2006

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Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ye Raman lasers
42.79.Gn Optical waveguides and couplers
42.60.By Design of specific laser systems
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

On the origin of increased open circuit voltage of dye-sensitized solar cells using 4-tert-butyl pyridine as additive to the electrolyte

M. Dürr, A. Yasuda, and G. Nelles

Appl. Phys. Lett. 89, 061110 (2006); http://dx.doi.org/10.1063/1.2266386 (3 pages) | Cited 38 times

Online Publication Date: 9 August 2006

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A combination of electrical measurements and surface analysis techniques was used to investigate the electronic structure of the TiO2/electrolyte interface and its change upon addition of 4-tert-butyl pyridine to the electrolyte. A reduced interface defect density and a resulting reduction of charge carrier recombination were found to be the main mechanism for an increased open circuit voltage of dye-sensitized solar cells with 4-tert-butyl pyridine in the electrolyte. The reduction of interface defect states was traced back to specific binding of 4-tert-butyl pyridine at defect sites on the TiO2 surface.
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84.60.Jt Photoelectric conversion
82.45.Gj Electrolytes

Ultrastable and efficient red organic light emitting diodes with doped transport layers

Rico Meerheim, Karsten Walzer, Martin Pfeiffer, and Karl Leo

Appl. Phys. Lett. 89, 061111 (2006); http://dx.doi.org/10.1063/1.2268354 (3 pages) | Cited 83 times

Online Publication Date: 9 August 2006

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We demonstrate extremely stable and highly efficient red p-i-n-type organic light emitting diodes (OLEDs) based on an iridium-based electrophosphorescent dye in suitable host materials. The OLEDs reach lifetimes well above 1×107 h at 100 cd/m2 initial luminance and reach at the same time a performance of 12.4% external quantum efficiency. This high lifetime is attributed to a combination of the low current density needed to reach a certain luminance and to the high stability of the materials against both charge carriers and excitons.
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85.60.Jb Light-emitting devices
85.30.Kk Junction diodes

Characteristics of a Si dual-band detector responding in both near- and very-long-wavelength-infrared regions

G. Ariyawansa, M. B. M. Rinzan, S. G. Matsik, G. Hastings, A. G. U. Perera, H. C. Liu, M. Buchanan, G. I. Sproule, V. I. Gavrilenko, and V. P. Kuznetsov

Appl. Phys. Lett. 89, 061112 (2006); http://dx.doi.org/10.1063/1.2336202 (3 pages) | Cited 1 time

Online Publication Date: 9 August 2006

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A p-type Si homojunction detector responding in both near- and very-long-wavelength-infrared (NIR and VLWIR) ranges is demonstrated. The detector consists of a p++-Si top contact layer, a p+-Si emitter, an undoped Si barrier, and a p++-Si bottom contact layer grown on a Si substrate. Interband and intraband transitions lead to NIR and VLWIR responses, respectively. The responsivity, quantum efficiency, and detectivity at −1 V bias and 4.6 K are ∼ 0.024 A/W, 3.7%, and ∼ 1.7×109 cm Hz1/2/W at 0.8 μm, while they are 1.8 A/W, 8.8%, and ∼ 1.2×1011 cm Hz1/2/W at 25 μm, respectively. The background limited infrared performance temperature at ±0.9 V bias is 25 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Optical amplification in Nd3+ doped electro-optic lanthanum lead zirconate titanate ceramics

Jingwen W. Zhang, Yingyin K. Zou, Qiushui Chen, Run Zhang, Kewen K. Li, Hua Jiang, Pi-Ling Huang, and Xuesheng Chen

Appl. Phys. Lett. 89, 061113 (2006); http://dx.doi.org/10.1063/1.2336216 (3 pages) | Cited 8 times

Online Publication Date: 9 August 2006

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As high as 13.0 dB single-pass gain was obtained at 1064.4 nm in a thin electro-optic ceramic plate of neodymium doped lanthanum-modified lead zirconate titanate (Nd:PLZT). Pumping with a diode laser, gains were achieved in 1.0 and 0.5 mol % Nd ion doped samples over a broad seed laser power ranging from tens of nanowatts to tens of milliwatts at room temperature. The broad absorption spectra of Nd:PLZT made it insensitive to the pump wavelength. The Nd:PLZT had a total scattering loss coefficient of less than 0.06 cm−1 and exhibited a considerable quadratic electro-optic coefficient greater than 0.30×10−16 m2/V2.
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42.70.-a Optical materials
78.20.Jq Electro-optical effects
78.30.Hv Other nonmetallic inorganics

Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser

Jennifer E. Hastie, Lynne G. Morton, Alan J. Kemp, Martin D. Dawson, Andrey B. Krysa, and John S. Roberts

Appl. Phys. Lett. 89, 061114 (2006); http://dx.doi.org/10.1063/1.2236108 (3 pages) | Cited 28 times

Online Publication Date: 9 August 2006

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An optically pumped red vertical-external-cavity surface-emitting laser with an AlInGaP gain region produced more than 1 W of continuous-wave output power at a wavelength of 675 nm. Frequency doubling in a beta-barium borate crystal placed at an intracavity beam waist generated 120 mW of total output power at 338 nm. Using an intracavity birefringent filter a second harmonic tuning range of ∼ 5 nm was achieved.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

High-resolution gas phase spectroscopy with a distributed feedback terahertz quantum cascade laser

H.-W. Hübers, S. G. Pavlov, H. Richter, A. D. Semenov, L. Mahler, A. Tredicucci, H. E. Beere, and D. A. Ritchie

Appl. Phys. Lett. 89, 061115 (2006); http://dx.doi.org/10.1063/1.2335803 (3 pages) | Cited 31 times

Online Publication Date: 10 August 2006

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The quantum cascade laser is a powerful, narrow linewidth, and continuous wave source of terahertz radiation. The authors have implemented a distributed feedback device in a spectrometer for high-resolution gas phase spectroscopy. Amplitude as well as frequency modulation schemes have been realized. The absolute frequency was determined by mixing the radiation from the quantum cascade laser with that from a gas laser. The pressure broadening and the pressure shift of a rotational transition of methanol at 2.519 THz were measured in order to demonstrate the performance of the spectrometer.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
42.62.Fi Laser spectroscopy
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

7 dB quadrature squeezing at 860 nm with periodically poled KTiOPO4

Shigenari Suzuki, Hidehiro Yonezawa, Fumihiko Kannari, Masahide Sasaki, and Akira Furusawa

Appl. Phys. Lett. 89, 061116 (2006); http://dx.doi.org/10.1063/1.2335806 (3 pages) | Cited 15 times

Online Publication Date: 10 August 2006

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The authors observed −7.2±0.2 dB quadrature squeezing at 860 nm by using a subthreshold continuous-wave pumped optical parametric oscillator with a periodically poled KTiOPO4 crystal as a nonlinear optical medium. The squeezing level was measured with the phase of homodyne detection locked at the quadrature. The blue light induced infrared absorption was not observed in the experiment.
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42.50.Dv Quantum state engineering and measurements
42.65.Yj Optical parametric oscillators and amplifiers
42.70.Mp Nonlinear optical crystals

High sensitivity autocorrelator based on a fluorescent liquid core fiber

Mickaël Lelek, Frédéric Louradour, Vincent Couderc, Pierre Viale, Sébastien Février, Jean Louis Auguste, Jean Marc Blondy, and Alain Barthélémy

Appl. Phys. Lett. 89, 061117 (2006); http://dx.doi.org/10.1063/1.2335809 (3 pages) | Cited 2 times

Online Publication Date: 10 August 2006

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The hollow core of an air-silica microstructured fiber was selectively filled with an alcoholic solution containing a laser dye (coumarin 515). This innovative liquid core fiber was used to build an efficient intensity autocorrelator operating by transverse imaging of the nonlinear fluorescence. Accurate measurement of pulse duration in the picosecond regime with submilliwatt average power has been demonstrated in the near infrared.
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42.81.Wg Other fiber-optical devices
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Distributed mode coupling in microring channel drop filters

Qin Chen, Yue-De Yang, and Yong-Zhen Huang

Appl. Phys. Lett. 89, 061118 (2006); http://dx.doi.org/10.1063/1.2335966 (3 pages) | Cited 7 times

Online Publication Date: 10 August 2006

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The authors present the observation of wide transmission dips in a microring channel drop filter by two-dimensional finite-difference time-domain simulation. The authors show that distributed mode coupling between the input waveguide and the resonator results in the oscillations of the coupling efficiency and the envelope of transmission spectra with wavelength. The critical coupling as the light just passing through the coupling region is important for optimizing related devices. If the width of the input waveguide is different from that of the ring resonator, the phenomenon can be greatly reduced.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

23 GHz operation of a room temperature photovoltaic quantum cascade detector at 5.35 μm

Daniel Hofstetter, Marcel Graf, Thierry Aellen, Jérôme Faist, Lubos Hvozdara, and Stéphane Blaser

Appl. Phys. Lett. 89, 061119 (2006); http://dx.doi.org/10.1063/1.2269408 (3 pages) | Cited 14 times

Online Publication Date: 10 August 2006

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We present a room temperature operated 5.35 μm quantum cascade detector which was tested at high frequencies using an optical heterodyne experiment. Two slightly detuned continuous wave distributed feedback single mode quantum cascade lasers were used to generate a beating signal. The maximum frequency at which the resulting microwave signal could be detected was 23 GHz. The cutoff behavior of our device was modeled with a simple RLC circuit and showed excellent agreement with the experimental data.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling

Effects of linewidth enhancement factor on period-one oscillations of optically injected semiconductor lasers

S. K. Hwang and D. H. Liang

Appl. Phys. Lett. 89, 061120 (2006); http://dx.doi.org/10.1063/1.2335978 (3 pages) | Cited 4 times

Online Publication Date: 10 August 2006

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The behavior of period-one oscillations in optically injected semiconductor lasers as a function of linewidth enhancement factor is investigated. The occurrence of the dynamics is favored by large values of the factor. The dependence of the spectral features of the dynamics on the factor suggests a strong relation between the emergence of the dynamics and the preferred cavity resonance under external perturbation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Broadband two-dimensional photonic crystal wave plate

Q. F. Dai, Y. W. Li, and H. Z. Wang

Appl. Phys. Lett. 89, 061121 (2006); http://dx.doi.org/10.1063/1.2243798 (3 pages) | Cited 12 times

Online Publication Date: 10 August 2006

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It is demonstrated in this work that the phase shift of reflected wave as a function of frequency changes smoothly within the stop band of two-dimensional photonic crystal, while it changes sharply within the passband. In the stop band, the difference between the phase shift of TE and that of TM reflected wave could remain constant in a rather wide frequency region. By using the difference of phase shift, the authors obtain a kind of half-wave plate that can be used in broad spectral bandwidth. Such photonic crystal wave plates have predominance in optical and optoelectronic integration.
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42.70.Qs Photonic bandgap materials
42.79.Ci Filters, zone plates, and polarizers

Location of lanthanide impurity levels in the III-V semiconductor GaN

P. Dorenbos and E. van der Kolk

Appl. Phys. Lett. 89, 061122 (2006); http://dx.doi.org/10.1063/1.2336716 (3 pages) | Cited 25 times

Online Publication Date: 10 August 2006

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Knowledge from lanthanide spectroscopy on wide band gap (6–10 eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and conduction bands in GaN is presented. The authors will demonstrate that the quantum efficiency of luminescence from Pr3+, Eu3+, Tb3+, and Yb3+ depends on the location of the lanthanide levels. Level location also controls electron acceptor and electron donor properties of lanthanide ions.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds

Surface-emitting distributed-feedback dye laser of a polymeric multilayer fabricated by spin coating

Toshiyuki Komikado, Shuhei Yoshida, and Shinsuke Umegaki

Appl. Phys. Lett. 89, 061123 (2006); http://dx.doi.org/10.1063/1.2336740 (3 pages) | Cited 2 times

Online Publication Date: 10 August 2006

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A distributed-feedback laser was demonstrated by using a fluorescent dye-doped polymer. The periodic structure of a one-dimensional photonic crystal was fabricated through spin coating and alternate stacking of high and low refractive-index polymers. The rhodamine-6G-doped multilayer showed a photonic band gap in the transmissivity spectrum at the fluorescent wavelength range. Laser emission from the surface of the multilayer was attained at the band edge for a pump of the second harmonic of a neodymium-doped yttrium aluminum garnet laser. Wavelength tuning was possible by spin coating a multilayer onto a concave substrate.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
42.55.Tv Photonic crystal lasers and coherent effects
42.60.Fc Modulation, tuning, and mode locking

Spatial coherence properties of electroluminescence from Alq3-based organic light emitting diodes

Kanchan Saxena, Dalip Singh Mehta, Ritu Srivastava, and M. N. Kamalasanan

Appl. Phys. Lett. 89, 061124 (2006); http://dx.doi.org/10.1063/1.2335610 (3 pages) | Cited 10 times

Online Publication Date: 10 August 2006

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Show Abstract
We report the measurement of spatial coherence properties of light emitted by organic electroluminescent devices based on tris-(8-hydroxyquinoline) aluminum. Coherence measurements were performed using Young’s double slit experiment. Fourier-transform technique was used for the measurement of visibility of the interference fringes from which the modulus of the degree of spatial coherence was determined. Experimental results were compared with the theoretical values and it is shown that the coherence properties of the light emitted by a simple organic light emitting device match with those of practical Lambertian sources.
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85.60.Jb Light-emitting devices

Multifunctional platinum porphyrin dendrimers as emitters in undoped phosphorescent based light emitting devices

Yanqin Li, Aurora Rizzo, Marco Salerno, Marco Mazzeo, Cheng Huo, Yue Wang, Kechang Li, Roberto Cingolani, and Giuseppe Gigli

Appl. Phys. Lett. 89, 061125 (2006); http://dx.doi.org/10.1063/1.2335511 (3 pages) | Cited 16 times

Online Publication Date: 11 August 2006

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The authors report on a class of platinum porphyrin based phosphorescent multifunctional first generation dendrimers (Pt-8Cn-TPP) incorporating a platinum porphyrin core as the emissive center and carbazole side groups as the hole, as well as energy transport fragments. Furthermore, the alkyl groups prevent aggregation and allow for the formation of transparent homogeneous films directly from solution. The intra- and intermolecular energy transfers by Förster and Dexter mechanisms from the carbazole side groups to the platinum porphyrin core have been investigated. Light emitting devices were fabricated and bright red electrophosphorescence was achieved from a single undoped emitting layer of Pt-8C4-TPP. The results indicate that platinum porphyrin dendrimers are very promising to make bright, red saturated and spin-coated phosphorescent devices with a simplified undoped emissive layer.
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85.60.Jb Light-emitting devices
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