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7 Aug 2006

Volume 89, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 89, 062501 (2006); http://dx.doi.org/10.1063/1.2259813 (3 pages)

Sangkook Choi, Ki-Suk Lee, and Sang-Koog Kim
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Integration of polymer light-emitting diode and polymer waveguide on Si substrate

Yuan-Yu Lin, Chung Cheng, Hua-Hsien Liao, Sheng-Fu Horng, Hsin-Fei Meng, and Chain-Shu Hsu

Appl. Phys. Lett. 89, 063501 (2006); http://dx.doi.org/10.1063/1.2219718 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2006

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We integrate a polymer light-emitting diode (PLED) and a polymer waveguide on a Si substrate. The light emitted from the PLED is coupled to the waveguide by a diffuser and a reflection layer with coupling efficiency about 1%. There is no delay nor distortion between PLED emission and the light propagation in the waveguide. Good direct modulation characteristics of the waveguide output are demonstrated up to 200 kHz. The device structure and processes are based on easy spin coating and are compatible to Si technology.
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42.82.Et Waveguides, couplers, and arrays
85.60.Jb Light-emitting devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.79.Gn Optical waveguides and couplers

High slew rate, ultrastable direct-coupled readout for dc superconducting quantum interference devices

Nikolai Oukhanski, Ronny Stolz, and Hans-Georg Meyer

Appl. Phys. Lett. 89, 063502 (2006); http://dx.doi.org/10.1063/1.2335630 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2006

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A very fast and thermostable readout electronics for dc superconducting quantum interference devices (SQUIDs) is presented. The authors have applied a concept which gives them the opportunity to combine several, at first sight contradictory, important parameters for the SQUID system user. With their flux-locked-loop electronics they could reach more than 16 MΦ0/s slew rate while using a 1.3 m cable between the electronics and a conventional low transition temperature SQUID (with a maximum peak-peak voltage of the flux-to-voltage transfer function of ≥ 63 μV). By making use of thermocurrent compensation in the first stage of the amplifier they have achieved a thermal drift of about 5 nV/K for a temperature range between 0 and 65 °C. The system demonstrated a white noise voltage level of ∼ 0.32 nV/Hz1/2, with a flicker noise corner frequency of about 0.1 Hz.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.-r Electronic circuits

Degradation mechanism of organic light-emitting device investigated by scanning photoelectron microscopy coupled with peel-off technique

H. J. Shin, M. C. Jung, J. Chung, K. Kim, J. C. Lee, and S. P. Lee

Appl. Phys. Lett. 89, 063503 (2006); http://dx.doi.org/10.1063/1.2335825 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2006

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The authors present space-resolved spectroscopic data on organic layers of a degraded organic light-emitting device. The data were obtained using a scanning photoelectron microscope (SPEM) coupled with peel-off technique to directly probe the uncontaminated organic layers, which were covered with cathode layer. The SPEM images of the degraded device show different and small size distributions of tris-8-hydroxy quinoline aluminum (Alq3) and hole-transport layers compared to that of as-prepared device. The analysis indicates that bonding strength between Alq3 and cathode layers and between the Alq3 and hole transport layers becomes weak as the device degrades, presumably due to structural deformation of the organic layers.
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85.60.Jb Light-emitting devices

Green fluorescent organic light-emitting device with external quantum efficiency of nearly 10%

Kenji Okumoto, Hiroshi Kanno, Yuji Hamaa, Hisakazu Takahashi, and Kenichi Shibata

Appl. Phys. Lett. 89, 063504 (2006); http://dx.doi.org/10.1063/1.2266452 (3 pages) | Cited 57 times

Online Publication Date: 9 August 2006

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Green fluorescent organic light-emitting device (OLED) exhibiting a high external quantum efficiency of nearly 10% has been developed. The OLED consists of simple three organic layers, using NPB, 0.8% C545T doped TPBA, and DBzA as a hole-transporting layer, an emitting layer, and an electron-transporting layer, respectively, [fluorocarbon coated indium tin oxide/NPB (60 nm)/08% C545T doped TPBA (40 nm)/DBzA (20 nm)/LiF (1 nm/Al], where NPB is 4,4′-bis (N-phenyl-1-naphthylamino)biphenyl, C545T is 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-benzo[l]pyrano[6 7 8-ij]quinolizin-11-one, TPBA is 9,9′,10,10′-tetraphenyl-2,2′-bianthracene, and DBzA is 9,10-bis[4-(6-methylbenzothiazol-2-yl)phenyl]anthracene. The high external quantum efficiency is maintained in the wide range of current density of 2–100 mA/cm2. The current efficiency and power efficiency of the OLED are also very high, 29.8 cd/A and 26.2 lm/W, respectively, at a current density of 20 mA/cm2. The OLED is promising for practical use with high color purity with Commission Internationale de L’Eclairage coordinates of (0.24, 0.62) and long half-lifetime of 71 h at a current density of 80 mA/cm2 (initial luminance of 23 900 cd/m2).
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85.60.Jb Light-emitting devices

Effect of self-organization in polymer/fullerene bulk heterojunctions on solar cell performance

Vishal Shrotriya, Yan Yao, Gang Li, and Yang Yang

Appl. Phys. Lett. 89, 063505 (2006); http://dx.doi.org/10.1063/1.2335377 (3 pages) | Cited 93 times

Online Publication Date: 9 August 2006

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The authors investigate the effect of self-organization by controlling the growth rate on the performance of polymer/fullerene bulk-heterojunction solar cells. The effect of growth rate on the morphology of the active layer is studied by atomic force microscopy technique. The electrical characterization by dark current and photocurrent measurements is performed. The hole mobility in the polymer increases by about two orders in magnitude and the carrier transport becomes highly balanced. Increased exciton generation rate, more efficient electron-hole pair dissociation, higher carrier mobility, and balanced carrier transport in the active layer explain the enhancement in the short-circuit current and fill factor.
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84.60.Jt Photoelectric conversion
85.65.+h Molecular electronic devices

Phase-sensitive Brillouin light scattering spectroscopy from spin-wave packets

A. A. Serga, T. Schneider, B. Hillebrands, S. O. Demokritov, and M. P. Kostylev

Appl. Phys. Lett. 89, 063506 (2006); http://dx.doi.org/10.1063/1.2335627 (3 pages) | Cited 13 times

Online Publication Date: 9 August 2006

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The authors report on the implementation of phase sensitivity into Brillouin light scattering spectroscopy from propagating spin-wave packets. In order to access phase information, interference between the light inelastically scattered by the spin-wave and a frequency shifted coherent reference beam is used. This approach allows for access to quantities such as the space- and time-resolved phase profile and the wave front of spin-wave packets and beams. The authors apply the developed method to investigations of the phase profiles of linear and nonlinear (soliton) spin-wave pulses. In particular, the constant phase profile characteristics for an envelope spin-wave soliton are demonstrated.
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07.60.Rd Visible and ultraviolet spectrometers
07.60.Ly Interferometers
42.65.Tg Optical solitons; nonlinear guided waves

Spatially extended nature of resistive switching in perovskite oxide thin films

Xin Chen, NaiJuan Wu, John Strozier, and Alex Ignatiev

Appl. Phys. Lett. 89, 063507 (2006); http://dx.doi.org/10.1063/1.2236213 (3 pages) | Cited 42 times

Online Publication Date: 10 August 2006

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The authors report the direct observation of the electric pulse induced resistance-change effect at the nanoscale on La1−xSrxMnO3 thin films by the current measurement of the atomic force microscopy (AFM) technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short-pulse-voltage switching conditions. It is important for future nanoscale nonvolatile memory device applications.
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73.61.Ng Insulators
73.63.Bd Nanocrystalline materials

Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

Tae Hun Kim, Il Han Park, Jong Duk Lee, Hyung Cheol Shin, and Byung-Gook Park

Appl. Phys. Lett. 89, 063508 (2006); http://dx.doi.org/10.1063/1.2335619 (3 pages) | Cited 19 times

Online Publication Date: 10 August 2006

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The authors modified the charge decay model of silicon-oxide-nitride-oxide-silicon-type memory at the temperatures above 150 °C. The modified model includes the effect of the internal electric field induced by the charges trapped in silicon nitride layer. The authors extracted the trap density distributions in energy level of the Si-rich silicon nitride using the model and compared them with those of stoichiometric silicon nitride. It has been revealed that the Si-rich silicon nitride has larger trap density in shallow energy level than the stoichiometric silicon nitride and this relation is reversed as the energy level goes deeper.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency

Baek-Hyun Kim, Chang-Hee Cho, Seong-Ju Park, Nae-Man Park, and Gun Yong Sung

Appl. Phys. Lett. 89, 063509 (2006); http://dx.doi.org/10.1063/1.2236104 (3 pages) | Cited 18 times

Online Publication Date: 11 August 2006

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The effect of Ni/Au metal contact on the carrier injection and the electroluminescence of silicon quantum dot light-emitting diodes (LEDs) was investigated. An LED with an annealed Ni/Au contact at 400 °C in air showed a lower threshold voltage compared to that of an as-deposited Ni/Au contact by forming a nickel silicide, which has a lower work function than Ni at the interface between metal layers and silicon nitride. The optical output power of the LED with the annealed Ni/Au contact was also increased due to a highly transparent NiO layer and a lowly resistant Au layer.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Ns Metal-nonmetal contacts
61.72.Cc Kinetics of defect formation and annealing
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