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7 Aug 2006

Volume 89, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 062501 (2006); http://dx.doi.org/10.1063/1.2259813 (3 pages)

Sangkook Choi, Ki-Suk Lee, and Sang-Koog Kim
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Experimental evidence of domain wall tilting in periodically poled lithium niobate crystals grown by the Czochralski off-center technique

M. Bazzan, N. Argiolas, C. Sada, and E. Cattaruzza

Appl. Phys. Lett. 89, 062901 (2006); http://dx.doi.org/10.1063/1.2266032 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2006

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Periodically poled lithium niobate crystals are expected to have ferroelectric domain boundaries parallel to the direction of the spontaneous polarization. The authors report, however, that this is not the case for periodic structures grown by the off-center Czochralski technique. By exploiting the high resolution x-ray diffraction technique in reciprocal space mapping mode, the authors demonstrate that the angle between the domain border and the spontaneous polarization directions is different from zero, reaching a value as high as 5°.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
81.10.Fq Growth from melts; zone melting and refining

Thermal stability of amorphous LaScO3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, T. Lee, M. J. Kim, H. S. Craft, J.-P. Maria, M. E. Hawley, B. Holländer, J. Schubert, and K. Eisenbeiser

Appl. Phys. Lett. 89, 062902 (2006); http://dx.doi.org/10.1063/1.2222302 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2006

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The thermal stability of amorphous LaScO3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO2 at the interface between LaScO3 and silicon. XRD studies showed that the films remained amorphous after annealing in N2 at 700 °C, although HRTEM showed structural order on an ∼ 1 nm length scale even in the as-deposited films. By 800 °C, the LaScO3 had started to crystallize and formed a ∼ 5 nm thick Sc-deficient interlayer between it and silicon.
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68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
77.55.-g Dielectric thin films
61.43.Er Other amorphous solids
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Three-dimensional recording by tightly focused femtosecond pulses in LiNbO3

Saulius Juodkazis, Markas Sudzius, Vygantas Mizeikis, Hiroaki Misawa, Eugene G. Gamaly, Youwen Liu, Oleg A. Louchev, and Kenji Kitamura

Appl. Phys. Lett. 89, 062903 (2006); http://dx.doi.org/10.1063/1.2335364 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2006

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The authors report on a three-dimensional single-shot optical recording by 150 fs pulses at 800 nm wavelength in Fe doped LiNbO3. The rewritable bits (2x×2y×8z μm3) are demonstrated. The highest refractive index modulation of ∼ 10−3 per single pulse has been formed by preferential photovoltaic effect at close to the dielectric breakdown irradiance of ∼ TW/cm2 and was independent of polarization (in respect to the c axis). The achievable refractive index modulation is evaluated and the recording mechanisms are discussed.
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42.79.Vb Optical storage systems, optical disks
42.70.Mp Nonlinear optical crystals
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Effects of strain gradient on charge offsets and pyroelectric properties of ferroelectric thin films

Yue Zheng, Biao Wang, and C. H. Woo

Appl. Phys. Lett. 89, 062904 (2006); http://dx.doi.org/10.1063/1.2335369 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2006

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The Landau-Ginzburg-Devonshire theory is used to study the effects of the strain gradient due to the epitaxial stresses in ferroelectric thin films sandwiched between two different substrates. The polarization in the film is found to be nonuniform, resulting in charge offsets and an asymmetric hysteresis response with characteristics similar to those in compositionally graded ferroelectric materials. The authors’ results suggest that the charge offset and pyroelectric effects can also be produced with effect of the strain gradient in film. In addition, such effects are found to be sensitive to an applied load.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.70.+a Pyroelectric and electrocaloric effects
68.60.Bs Mechanical and acoustical properties
77.22.Ej Polarization and depolarization

Anisotropic ferro- and piezoelectric properties of sol-gel-grown Bi3.15Nd0.85Ti3O12 films with two different orientations on Pt/Ti/SiO2/Si

C. J. Lu, X. L. Liu, X. Q. Chen, C. J. Nie, Gwenael Le Rhun, Stephan Senz, and Dietrich Hesse

Appl. Phys. Lett. 89, 062905 (2006); http://dx.doi.org/10.1063/1.2335409 (3 pages) | Cited 20 times

Online Publication Date: 7 August 2006

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Bi3.15Nd0.85Ti3O12 thin films of two different preferred orientations were sol-gel grown on Pt/Ti/SiO2/Si. Using different heating rates during crystallization, either films containing 65% columnar grains with (104)/(014) orientation or fine-grained films with a predominant c-axis orientation were obtained. Anisotropic ferroelectric and piezoelectric properties were determined, with a remanent polarization 2Pr = 46.4 μC/cm2 and a piezoelectric coefficient d33 = 17 pm/V in a predominantly (104)/(014)-oriented film, but only 2Pr = 16.7 μC/cm2 and d33 = 5 pm/V in a predominantly c-axis-oriented film. These values confirm that the polarization vector of this material is close to the crystallographic a axis.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.40.Gh Other heat and thermomechanical treatments
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Microstructure and piezoelectric properties of 0.95(Na0.5K0.5)NbO3–0.05BaTiO3 ceramics

Hwi-Yeol Park, Cheol-Woo Ahn, Hyun-Cheol Song, Jong-Heun Lee, Sahn Nahm, Kenji Uchino, Hyeung-Gyu Lee, and Hwack-Joo Lee

Appl. Phys. Lett. 89, 062906 (2006); http://dx.doi.org/10.1063/1.2335816 (3 pages) | Cited 94 times

Online Publication Date: 8 August 2006

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For 0.95(Na0.5K0.5)NbO3–0.05BaTiO3 (0.95NKN-0.05BT) ceramics sintered at 1040–1075 °C, abnormal grain growth occurred but the grain size decreased when the sintering temperature exceeded 1075 °C. The dielectric constant (ϵ3T/ϵ3), electromechanical coupling factor (kp), and piezoelectric constant (d33) were considerably increased with increasing relative density and grain size. Evaporation of Na2O deteriorated the piezoelectric properties by decreasing the resistivity. To minimize Na2O evaporation, specimens were muffled with 0.95NKN-0.05BT powders during the sintering. Improved piezoelectric properties of d33 = 225 pC/N, kp = 36%, and ϵ3T/ϵ3 = 1058 were obtained for specimen sintered at 1060 °C for 2 h with muffling.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Ferroelectric properties in KNbO3 thin films probed by optical second harmonic generation

T. V. Murzina, S. A. Savinov, A. A. Ezhov, O. A. Aktsipetrov, I. E. Korsakov, I. A. Bolshakov, and A. R. Kaul

Appl. Phys. Lett. 89, 062907 (2006); http://dx.doi.org/10.1063/1.2336743 (3 pages) | Cited 3 times

Online Publication Date: 10 August 2006

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Ferroelectric phase transitions and the structure of KNbO3 nanometer-thick films deposited by Metal-organic chemical-vapor deposition technique on a MgO(100) substrate are studied. Thin KNbO3 films of the average thickness from 20 to 150 nm possess a grainlike structure with a lateral grain size of about 250 nm. Such films reveal ferroelectric properties similar to KNbO3 single crystal. Temperature dependencies of optical second harmonic generation intensity show that the Curie temperature TC of the nanometer-thick KNbO3 films is about 30 °C lower than the TC of KNbO3 single crystal, which is attributed to size effects in KNbO3 nanograins.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
68.55.-a Thin film structure and morphology
61.46.Hk Nanocrystals
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