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7 Aug 2006

Volume 89, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 89, 062501 (2006); http://dx.doi.org/10.1063/1.2259813 (3 pages)

Sangkook Choi, Ki-Suk Lee, and Sang-Koog Kim
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Local resistance measurement across grain boundaries in low-temperature polycrystalline silicon layer of thin film transistor using scanning spreading resistance microscopy

Hiroto Yamagiwa, Satoshi Abo, Fujio Wakaya, Mikio Takai, Tadao Sakamoto, Hidetada Tokioka, and Naoki Nakagawa

Appl. Phys. Lett. 89, 062101 (2006); http://dx.doi.org/10.1063/1.2266451 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2006

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Local resistance distribution in a low-temperature polycrystalline Si layer of a thin film transistor with a lightly doped drain (LDD) structure was investigated using scanning spreading resistance microscopy. The local resistance around the grain boundaries was found to be lower than that at grain insides in the drain, LDD, and channel regions. At the center of the grain boundaries, however, slightly higher resistance part was sandwiched between low resistance regions. Identifying the drain, the LDD, and the channel regions is succeeded by an analysis in which only the lower local resistances were used.
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73.61.Cw Elemental semiconductors
61.72.Mm Grain and twin boundaries

Suppression of phosphorus diffusion by carbon co-implantation

B. J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S. B. Felch, E. J. H. Collart, and N. E. B. Cowern

Appl. Phys. Lett. 89, 062102 (2006); http://dx.doi.org/10.1063/1.2234315 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2006

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The impact of Si interstitial (Sii) flux suppression on the formation of P junctions by rapid thermal annealing (RTA) is demonstrated. Here we investigate the role of amorphization coupled with C co-implantation on P diffusion and its activation. From experiments on C co-implants in a-Si versus c-Si, we conclude that only a small fraction of C interacts with Si interstitials (Sii). We have demonstrated that optimization of implants followed by spike RTA yields extensions suitable for gate lengths of 30 nm, with vertical depth Xj = 20 nm (taken at 5×1018 at./cm3), abruptness of 3 nm/decade, and Rs = 326 Ω/◻.
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81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
66.30.J- Diffusion of impurities
61.43.Dq Amorphous semiconductors, metals, and alloys
61.72.uf Ge and Si
61.72.S- Impurities in crystals

High-mobility amorphous In2O3–10 wt %ZnO thin film transistors

B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine

Appl. Phys. Lett. 89, 062103 (2006); http://dx.doi.org/10.1063/1.2335372 (3 pages) | Cited 81 times

Online Publication Date: 7 August 2006

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The authors report on the fabrication and characterization of thin film transistors that use sputter deposited amorphous indium zinc oxide both for the channel and source-drain metallizations in a gate-down configuration. The channel and source-drain layers were deposited from a single In2O3–10 wt %ZnO ceramic target using dc magnetron sputtering onto an unheated substrate. The carrier densities in the channel (2.1×1017/cm3) and source/drain regions (3.3×1020/cm3) were adjusted by changing the reactive oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with saturation mobility of 20 cm2/V s and on/off current ratio of 108.
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85.30.Tv Field effect devices
85.40.Ls Metallization, contacts, interconnects; device isolation

Annealing effects on single Shockley faults in 4H-SiC

Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tomonori Nakamura, Koji Nakayama, Ryousuke Ishii, and Yoshitaka Sugawara

Appl. Phys. Lett. 89, 062104 (2006); http://dx.doi.org/10.1063/1.2234740 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2006

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We investigated the annealing effect on single Shockley faults (SSFs) in the SiC epitaxial layers by photoluminescence mapping in combination with high-power laser illumination. Comparing before and after annealing at 350–550 °C, it became obvious that annealing results in the shrinking of the faulted area of SSFs. When high-power laser illumination is performed again on the same area annealed at 550 °C, the right-angled triangular SSFs reformed into exactly the same features as those before annealing, but the isosceles triangular SSFs did not reform. The annealing temperature to start shrinking the faulted area differs according to the type of SSF.
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61.72.Cc Kinetics of defect formation and annealing
61.72.Nn Stacking faults and other planar or extended defects
78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials

Electrical switching and transport in the Si/organic monolayer/Au and Si/organic bilayer/Al devices

Chia-Hsun Tu, Yi-Sheng Lai, and Dim-Lee Kwong

Appl. Phys. Lett. 89, 062105 (2006); http://dx.doi.org/10.1063/1.2335818 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2006

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In this letter, the authors investigated the switching and transport characteristics of Si/organic bilayer/Al and Si/organic monolayer/Au devices. The former devices, with two different organic layers, exhibit negative differential resistance (NDR), and the switching process can be manipulated. The irrelevancy of the stacking sequence in regard to the NDR suggests that the interface between these two layers accounts for this phenomenon. On the other hand, using gold as the top electrode, the device was found to exhibit distinct bistability with an on/off ratio up to 105. The current-voltage characteristics suggest that the filament paths that formed as a result of gold diffusion are responsible for the observed bistability.
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85.30.Tv Field effect devices

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean

Appl. Phys. Lett. 89, 062106 (2006); http://dx.doi.org/10.1063/1.2335390 (3 pages) | Cited 97 times

Online Publication Date: 9 August 2006

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Room temperature electron mobility of 1170 cm2/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6±0.3)×1013 cm−2 electron gas density intrinsic to the Al0.82In0.18N/GaN material system. This results in a two-dimensional sheet resistance of 210 Ω/◻. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering.
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85.30.Tv Field effect devices

Effects of tensile stress induced by SiO2 passivation layer on the properties of AlGaN/GaN heterostructure photodiode

Da You, Yingwen Tang, Jintong Xu, Xue Li, Xiangyang Li, and Haimei Gong

Appl. Phys. Lett. 89, 062107 (2006); http://dx.doi.org/10.1063/1.2336624 (3 pages) | Cited 4 times

Online Publication Date: 9 August 2006

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The effects of tensile stress induced by SiO2 passivation layer on AlxGa1−xN/GaN heterostructure photodiode are investigated. The photodiode, with SiO2 layer annealed at 650 °C for 30 min in O2, shows that reverse current has decreased to 6.16 nA/cm−2 under −10 V, two orders lower than that of the device without annealing technique. The responsivity also increases to 0.212 A/W at zero bias. The high-resolution x-ray diffraction, Hall measurements are taken to investigate the surface strain and electrical properties of p-AlGaN surface. These observations indicate that tensile stress induced by SiO2 annealing technique can improve performances of this photodiode greatly.
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85.60.Dw Photodiodes; phototransistors; photoresistors
61.72.Cc Kinetics of defect formation and annealing

Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels

S. Masubuchi, K. Hamaya, and T. Machida

Appl. Phys. Lett. 89, 062108 (2006); http://dx.doi.org/10.1063/1.2335595 (3 pages) | Cited 6 times

Online Publication Date: 9 August 2006

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A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, the authors obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a comparison of these two spectra, the values of the Knight shift can be given for the nuclear spins polarized dynamically in the region between the relevant edge channels in a single two-dimensional electron system, indicating that this method has a very high sensitivity compared to a conventional NMR technique.
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76.60.Cq Chemical and Knight shifts
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.63.Bd Nanocrystalline materials
73.43.-f Quantum Hall effects
71.70.Jp Nuclear states and interactions

Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail

Yong Chang, Christoph H. Grein, Sivalingam Sivananthan, M. E. Flatte, V. Nathan, and S. Guha

Appl. Phys. Lett. 89, 062109 (2006); http://dx.doi.org/10.1063/1.2245220 (3 pages) | Cited 8 times

Online Publication Date: 10 August 2006

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An analytical model describing the absorption behavior of HgCdTe is developed that simultaneously considers the contributions from nonparabolic conduction and light hole bands as calculated by a 14×14 matrix k∙p method as well as the Urbach tail. This model is capable of smoothly fitting experimental absorption coefficient curves over energies ranging from the Urbach tail region to the intrinsic absorption region up to 300 meV above the band gap. Comparisons to the experimental results give good agreement.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
72.80.Ey III-V and II-VI semiconductors
71.15.-m Methods of electronic structure calculations

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

B. J. Pawlak, T. Janssens, B. Brijs, W. Vandervorst, E. J. H. Collart, S. B. Felch, and N. E. B. Cowern

Appl. Phys. Lett. 89, 062110 (2006); http://dx.doi.org/10.1063/1.2227863 (3 pages) | Cited 18 times

Online Publication Date: 11 August 2006

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We investigate the impact of amorphization and C co-implantation on B diffusion and activation properties after conventional spike rapid thermal annealing (RTA). We observe that after complete recrystallization at 600 °C the B tail deepens by 5 nm (at 5×1018 at./cm3) due to B diffusion in a-Si. After spike RTA it becomes 12 nm deeper with respect to an as-implanted profile, which proves that both diffusion mechanisms in a-Si and c-Si are important. However, the B diffusion in c-Si is sensitive to the fraction of substitutional C incorporated into c-Si. The best junction depth is Xj = 16.5 nm, with abruptness of 2 nm/decade and Rs = 583 Ω/◻.
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61.72.uf Ge and Si
66.30.J- Diffusion of impurities
61.72.Cc Kinetics of defect formation and annealing
61.72.S- Impurities in crystals
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