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14 Aug 2006

Volume 89, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 073501 (2006); http://dx.doi.org/10.1063/1.2335838 (3 pages)

Ingrid Graz, Martin Kaltenbrunner, Christoph Keplinger, Reinhard Schwödiauer, Siegfried Bauer, Stéphanie P. Lacour, and Sigurd Wagner
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Flexible ferroelectret field-effect transistor for large-area sensor skins and microphones

Ingrid Graz, Martin Kaltenbrunner, Christoph Keplinger, Reinhard Schwödiauer, Siegfried Bauer, Stéphanie P. Lacour, and Sigurd Wagner

Appl. Phys. Lett. 89, 073501 (2006); http://dx.doi.org/10.1063/1.2335838 (3 pages) | Cited 33 times

Online Publication Date: 14 August 2006

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Ferroelectrets generate an electric field large enough to modulate the conductance of the source-drain channel of a thin-film field-effect transistor. Integrating a ferroelectret with a thin-film transistor produces a ferroelectret field-effect transistor. The authors made such transistors by laminating cellular polypropylene films and amorphous silicon thin-film transistors on polyimide substrates. They show that these ferrroelectret field-effect transistors respond in a static capacitive or dynamic piezoelectric mode. A touch sensor, a pressure-activated switch, and a microphone are demonstrated. The structure can be scaled up to large-area flexible transducer arrays, such as roll-up steerable compliant sensor skin.
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85.30.Tv Field effect devices
84.32.Dd Connectors, relays, and switches
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
43.38.Kb

Enhanced spectral coverage in tandem organic solar cells

Gilles Dennler, Hans-Jürgen Prall, Robert Koeppe, Martin Egginger, Robert Autengruber, and Niyazi Serdar Sariciftci

Appl. Phys. Lett. 89, 073502 (2006); http://dx.doi.org/10.1063/1.2336593 (3 pages) | Cited 72 times

Online Publication Date: 14 August 2006

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In order to realize enhanced spectral coverage in organic photovoltaic devices, the authors have stacked a zinc phthalocyanine:C60 based cell on the top of a poly-3-hexyl-thiophene:[6,6]-phenyl C61-butyric acid methyl ester layer using a 1 nm thick Au intermediate recombination layer. Such tandem devices comprising active materials with complementary absorption spectra exhibit a short circuit current (Isc) of 4.8 mA cm−2, an open circuit voltage (Voc) of 1020 mV, and a fill factor of 0.45. Measurements of the photocurrent versus wavelength of the incident light show that photons are converted into charge carriers from 400 to more than 800 nm. Further optimization of the respective layer thicknesses may lead to high efficiency devices.
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84.60.Jt Photoelectric conversion

Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN

Serkan Butun, Mutlu Gökkavas, HongBo Yu, and Ekmel Ozbay

Appl. Phys. Lett. 89, 073503 (2006); http://dx.doi.org/10.1063/1.2234741 (3 pages) | Cited 14 times

Online Publication Date: 15 August 2006

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Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96×10−10 A/cm2 at 50 V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63 A/W at 50 V bias for 360 nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3 pW was detectable using the devices that were fabricated on the semi-insulating template.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Highly efficient organic light-emitting diodes based on donor-acceptor small molecules

Jae-Jin Oh, Ki-Won Kim, Min-Sook Kim, Tae-Woo Kwon, Dong-Kyu Park, Seong-Jin Cho, and Hyung-Suk Woo

Appl. Phys. Lett. 89, 073504 (2006); http://dx.doi.org/10.1063/1.2243864 (3 pages) | Cited 2 times

Online Publication Date: 15 August 2006

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The authors have fabricated highly efficient organic light-emitting diodes from donor-acceptor small molecules, 2-(4-methyl-quinolin-2-yl)-10-phenyl-phenothiazine (MQPTZ) and 2-(4-phenyl-quinolin-2-yl)-10-phenyl-phenothiazine (PQPTZ). Their devices turned on at 4.0 V and emitted strong green light near 510 nm. The maximum luminance of 60 000 and 55 000 cd/m2 at 10.4 V and the maximum power efficiencies of 5.75 and 2.5 lm/W at 5 V were obtained from the MQPTZ and the PQPTZ, respectively. The overall performance of their devices in terms of current-voltage, luminance, and external quantum efficiency were discussed and compared with those from the device with tris-(8-hydroxyquinolineolato) aluminum.
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85.60.Jb Light-emitting devices

Two-dimension full array high-speed ink-jet print head

M. Einat and N. Einat

Appl. Phys. Lett. 89, 073505 (2006); http://dx.doi.org/10.1063/1.2337107 (3 pages) | Cited 1 time

Online Publication Date: 15 August 2006

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An ink-jet print head in a structure, similar to a liquid crystal display, is suggested. It is based on a segment, containing a microink reservoir, feeding one or a few nozzles. The segment is autonomous and unlimitedly duplicable to form a large ink-jet print head. The microreservoirs are open to the atmospheric pressure, and pressure regulation in the nozzle is accomplished by capillary action. The microreservoirs are replenished by slow wiper smearing action. Experiments with a 57600 nozzle matrix print head showed good results for the design. Printing speed of ∼ 1000 pagesmin, and even more, is achievable.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
89.20.Bb Industrial and technological research and development

Characterizing stress in ultrathin silicon wafers

Indrajit Paul, Bivragh Majeed, Kafil M. Razeeb, and John Barton

Appl. Phys. Lett. 89, 073506 (2006); http://dx.doi.org/10.1063/1.2336212 (3 pages) | Cited 4 times

Online Publication Date: 16 August 2006

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The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 μm thick wafer was found to be less than 2 mm using the current grinding process.
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68.60.Bs Mechanical and acoustical properties
71.20.Mq Elemental semiconductors
81.65.Ps Polishing, grinding, surface finishing
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport

H. Lin and S. Tiwari

Appl. Phys. Lett. 89, 073507 (2006); http://dx.doi.org/10.1063/1.2337104 (3 pages) | Cited 22 times

Online Publication Date: 16 August 2006

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Ambient adsorption is known to cause hysteretic behavior and irreproducible transport phenomena in carbon nanotubes and their corresponding field-effect transistors. The authors report that pulsed measurements, with a time constant below 500 μs, provide reproducible characteristics of carbon nanotube field-effect transistor with minimal hysteresis. Transient measurements of fabricated devices in air reveal multiple time constants whose origins are linked to adsorption processes and the local electric field environment of the carbon nanotube surface. Additional measurements in vacuum allow them to further elaborate on distinct effects on device transport characteristics due to adsorption.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Nitride-based high electron mobility transistors with a GaN spacer

T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, S. P. DenBaars, U. K. Mishra, J. Liberis, O. Kiprijanovic, and A. Matulionis

Appl. Phys. Lett. 89, 073508 (2006); http://dx.doi.org/10.1063/1.2335514 (3 pages) | Cited 13 times

Online Publication Date: 17 August 2006

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A GaN/ultrathin AlN/GaN heterojunction has been used to introduce a GaN spacer between the GaN channel and the AlGaN barrier in AlGaN/GaN high electron mobility transistors (HEMTs). In conventional AlGaN/GaN devices, the alloy scattering of the electrons with the AlGaN barrier degrades the electron velocity at high electric fields. This effect is significantly reduced in GaN-spacer transistors, which therefore have much better high field transport properties. While the dc performance of these transistors is similar to conventional AlGaN/GaN HEMTs, a 20% increase in the electron velocity has been measured by two different techniques.
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85.30.Tv Field effect devices

Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

Ji-Song Lim, Xiaodong Yang, Toshikazu Nishida, and Scott E. Thompson

Appl. Phys. Lett. 89, 073509 (2006); http://dx.doi.org/10.1063/1.2245373 (3 pages) | Cited 14 times

Online Publication Date: 17 August 2006

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An experimental method to determine both the hydrostatic and shear deformation potential constants is introduced. The technique is based on the change in the gate tunneling currents of Si-metal oxide semiconductor field effect transistors (MOSFETs) under externally applied mechanical stress and has been applied to industrial n-type MOSFETs. The conduction band hydrostatic and shear deformation potential constants (Ξd and Ξu) are extracted to be 1.0±0.1 and 9.6±1.0 eV, respectively, which is consistent with recent theoretical works.
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85.30.Tv Field effect devices

Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Sanghyun Ju, Kangho Lee, David B. Janes, Ramesh C. Dwivedi, Habibah Baffour-Awuah, R. Wilkins, Myung-Han Yoon, Antonio Facchetti, and Tobin J. Mark

Appl. Phys. Lett. 89, 073510 (2006); http://dx.doi.org/10.1063/1.2336744 (3 pages) | Cited 9 times

Online Publication Date: 18 August 2006

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See Also: Erratum

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In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (Vth) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, Vth parameters of the SiO2-based ZnO NW-FETs display average shifts of ∼ −4.0 and ∼ −10.9 V for 5.71 and 285 krad(Si) H+ irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H+ irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.
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61.80.Jh Ion radiation effects
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Tv Field effect devices
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