APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 Aug 2006

Volume 89, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 073501 (2006); http://dx.doi.org/10.1063/1.2335838 (3 pages)

Ingrid Graz, Martin Kaltenbrunner, Christoph Keplinger, Reinhard Schwödiauer, Siegfried Bauer, Stéphanie P. Lacour, and Sigurd Wagner
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Enhanced field emission from imprinted carbon nanotube arrays

Peng Liu, Liang Liu, Yang Wei, Leimei Sheng, and Shoushan Fan

Appl. Phys. Lett. 89, 073101 (2006); http://dx.doi.org/10.1063/1.2336205 (3 pages) | Cited 10 times

Online Publication Date: 14 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have fabricated patterned carbon nanotube arrays by a simple postgrowth imprinting method. Patterns with size down to 2 μm can be formed with appropriate stamps. The imprinted array exhibited greatly enhanced field emission, the turn-on voltage was reduced to 0.9 V/μm from 2.8 V/μm of the as grown sample, and the aging behavior in long time emission was also lessened. The imprinted patterns were stable and able to withstand long time field emission measurement. This method could serve as a promising candidate for fast and low-cost production of patterned carbon nanotube arrays.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
81.07.De Nanotubes
81.16.Rf Micro- and nanoscale pattern formation
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Internal and effective stresses in nanocrystalline electrodeposited Ni

S. Van Petegem, S. Brandstetter, H. Van Swygenhoven, and J-L. Martin

Appl. Phys. Lett. 89, 073102 (2006); http://dx.doi.org/10.1063/1.2336726 (3 pages) | Cited 23 times

Online Publication Date: 14 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Stress reduction experiments performed during tensile deformation of nanocrystalline electrodeposited Ni demonstrate high values for the effective and the internal stress as compared to coarse grained metals and evidence the existence of a negative creep. The results are interpreted in terms of a thermally activated dislocation mechanism where propagation is hindered by pinning at grain boundaries.
Show PACS
62.25.-g Mechanical properties of nanoscale systems
62.20.Hg Creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.40.Lm Deformation, plasticity, and creep
61.72.Mm Grain and twin boundaries

Mechanical characterization device for in situ measurement of nanomechanical properties of micro/nanostructures

Utkarsha Singh, Vikas Prakash, Alexis R. Abramson, Wei Chen, Liangti Qu, and Liming Dai

Appl. Phys. Lett. 89, 073103 (2006); http://dx.doi.org/10.1063/1.2271576 (3 pages) | Cited 7 times

Online Publication Date: 15 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A characterization device was developed for nanomechanical testing on one-dimensional micro/nanostructures. The tool consists of a nanomanipulator, a three-plate capacitive transducer, and associated probes, and is operated inside a scanning electron microscope. The transducer independently measures force and displacement with micronewton and nanometer sale resolutions, respectively. Tensile testing of a polyaniline microfiber (diameter ∼ 1 μm) demonstrated the capabilities of the system. Engineering stress versus strain curves exhibited two distinct regions with different Young’s moduli. Failure at the probe-sample weld occurred at ∼ 67 MPa, suggesting that polyaniline microfibers exhibit a yield stress that is higher than most comparable bulk polymers.
Show PACS
81.07.Bc Nanocrystalline materials
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
62.25.-g Mechanical properties of nanoscale systems

Determination of chiral indices of individual single- and double-walled boron nitride nanotubes by electron diffraction

R. Arenal, M. Kociak, A. Loiseau, and D.-J. Miller

Appl. Phys. Lett. 89, 073104 (2006); http://dx.doi.org/10.1063/1.2335379 (3 pages) | Cited 21 times

Online Publication Date: 15 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The intensities of electron diffraction patterns from individual (single-, double-walled) boron nitride nanotubes (BNNTs) as well as from bundles of these tubes have been recorded. The helicities have been systematically measured, and the diameter and the chiral indices have been determined. The analysis of 121 nanotubes reveals that 12% of the tubes are zigzag, while the distribution of the other helicities is uniform. The large value of the intertube distance and the significant difference of the chiral angle between the two constituent tubes in double-walled BNNTs indicate a lower interaction between the BN sheets than in bulk hexagonal BN.
Show PACS
61.46.Fg Nanotubes

Ordering of metallic quantum dots

David Salac and Wei Lu

Appl. Phys. Lett. 89, 073105 (2006); http://dx.doi.org/10.1063/1.2337006 (3 pages) | Cited 3 times

Online Publication Date: 15 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter proposes a mechanism for the ordering of metallic quantum dots without coherent lattice or lattice mismatch with the substrate so that elasticity may not account for the phenomena. The authors show that contact potential induces repulsive charge clouds in the substrate. The size-dependent repulsion and van der Waals attraction lead to ordered nanoscale structures.
Show PACS
68.65.Hb Quantum dots (patterned in quantum wells)
73.40.Cg Contact resistance, contact potential
61.46.-w Structure of nanoscale materials

Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon

G. M. Jones, B. H. Hu, C. H. Yang, M. J. Yang, Russell Hajdaj, and Gerard Hehein

Appl. Phys. Lett. 89, 073106 (2006); http://dx.doi.org/10.1063/1.2337273 (3 pages) | Cited 6 times

Online Publication Date: 16 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors demonstrate a silicon-based single-electron transistor (SET) in the few-electron regime. Our structure is similar to a metal-oxide-semiconductor field-effect transistor. The substrate, however, is undoped and could be isotope enriched so that any nonuniformity and spin decoherence due to impurity and nuclear spins can be minimized. A bilayer-gated configuration provides flexibility in manipulating single electrons. The stability chart measured at 4.2 K shows diamondlike domains with a charging energy of 18 meV, indicating a quantum dot of 20 nm in diameter. The benefits of using this enhancement-mode SET in silicon and its potential application for scalable quantum computing are discussed.
Show PACS
85.35.Gv Single electron devices
85.30.Tv Field effect devices
03.67.Lx Quantum computation architectures and implementations

In situ real time monitoring of nanosecond imprint process

Qiangfei Xia, Zhaoning Yu, He Gao, and Stephen Y. Chou

Appl. Phys. Lett. 89, 073107 (2006); http://dx.doi.org/10.1063/1.2335952 (3 pages) | Cited 5 times

Online Publication Date: 16 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using a real time imprint monitoring system (RIMS), the authors measured the process time for laser assisted nanoimprint lithography to be about 200 ns. They found that during this short period of time, the mold had been fully pressed into the resist, resulting in a full pattern transfer with high fidelity. Their results also demonstrated the capability of RIMS for monitoring an ultrafast imprint process.
Show PACS
81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
42.62.-b Laser applications

Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers

Gong-Ru Lin, Hao-Chung Kuo, Huang-Shen Lin, and Chih-Chiang Kao

Appl. Phys. Lett. 89, 073108 (2006); http://dx.doi.org/10.1063/1.2336081 (3 pages) | Cited 10 times

Online Publication Date: 16 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is investigated. The Ni nanodots can hardly self-aggregate on highly heat-dissipated Si substrate with a thermal conductivity of 148 W/m K. Adding a 200-Å-thick SiO2 buffer with an ultralow thermal conductivity of 1.35 W/m K prevents the formation of NiSi2 compounds, enhances the heat accumulation, and releases the adhesion at Ni/Si interface, which greatly accelerates the self-assembly of Ni nanodots. Dense Ni nanodots with size and density of 30 nm and 7×1010 cm−2, respectively, can be formatted after rapid thermal annealing at 850 °C for 22 s.
Show PACS
81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys
81.16.Dn Self-assembly
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
68.35.Np Adhesion
61.72.Cc Kinetics of defect formation and annealing

Carrier carrying capacity of one-step grown suspended carbon nanotube bridge with carbon nanotube contact electrodes: For practical one-dimensional electronics

Yun-Hi Lee, Jong-Hee Lee, S. J. Chung, S. Lee, and B. K. Ju

Appl. Phys. Lett. 89, 073109 (2006); http://dx.doi.org/10.1063/1.2336084 (3 pages) | Cited 11 times

Online Publication Date: 16 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report the carrier transport and electrical breakdown behaviors of micron-long-channel suspended carbon nanotube (CNT) of carbon-based one-dimensional junction with CNTs as drain and source electrodes. The structure consisted of bundle-type CNT electrode–a CNT channel–bundle-type CNT electrode, produced by one-step in situ direct growth via a unique diluted magnetic nanothick film catalyst at low temperature. The unique suspended all-one-dimensional CNT-based junction provides some insights into recent reports that an electrical breakdown of CNTs can be induced not by the contact problem but by the nonhomogeneously Joule heating along nanotube without release of heat into contacts by the observed breakdown at midlength of a 1–2 μm long channel. The high current carrying all-CNT junction with bridging yield of 90% and stable operation at fixed voltage level can contribute into realization of practical integrated nanoelectronics such as interconnector and transistor via junction formation of one-step final process.
Show PACS
73.63.Fg Nanotubes
81.07.De Nanotubes
81.05.U- Carbon/carbon-based materials
81.16.Hc Catalytic methods

Nanoscale surface self-patterning of FeAl single crystals by vacancy absorption process

K. Yoshimi, M. Tsunekane, R. Nakamura, A. Yamauchi, and S. Hanada

Appl. Phys. Lett. 89, 073110 (2006); http://dx.doi.org/10.1063/1.2245215 (3 pages) | Cited 5 times

Online Publication Date: 16 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The surface morphology of B2-structured FeAl single crystals is modified on a nanoscale by the absorption process of supersaturated thermal vacancies. A high density of nano to mesoscale surface pores is successfully produced by the vacancy absorption process through water quenching, surface treatments, and aging heat treatment. Their shape, size, and density can be controlled by varying the surface orientation of single crystals, quenching temperature, aging temperature, and aging time. These results suggest that surface self-patterning by the vacancy absorption process is a useful bottom-up technique for obtaining nanoscale surface patterns in metallic materials.
Show PACS
81.05.Bx Metals, semimetals, and alloys
81.16.Rf Micro- and nanoscale pattern formation
61.72.J- Point defects and defect clusters
81.40.Gh Other heat and thermomechanical treatments
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
68.35.B- Structure of clean surfaces (and surface reconstruction)

Elasticity, strength, and toughness of single crystal silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon

H. D. Espinosa, B. Peng, N. Moldovan, T. A. Friedmann, X. Xiao, D. C. Mancini, O. Auciello, J. Carlisle, C. A. Zorman, and M. Merhegany

Appl. Phys. Lett. 89, 073111 (2006); http://dx.doi.org/10.1063/1.2336220 (3 pages) | Cited 19 times

Online Publication Date: 17 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, the authors report the mechanical properties of three emerging materials in thin film form: single crystal silicon carbide (3C-SiC), ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon. The materials are being employed in micro- and nanoelectromechanical systems. Several reports addressed some of the mechanical properties of these materials but they are based in different experimental approaches. Here, they use a single testing method, the membrane deflection experiment, to compare these materials’ Young’s moduli, characteristic strengths, fracture toughnesses, and theoretical strengths. Furthermore, they analyze the applicability of Weibull theory [ Proc. Royal Swedish Inst. Eng. Res. 153, 1 (1939); ASME J. Appl. Mech. 18, 293 (1951) ] in the prediction of these materials’ failure and document the volume- or surface-initiated failure modes by fractographic analysis. The findings are of particular relevance to the selection of micro- and nanoelectromechanical systems materials for various applications of interest.
Show PACS
68.60.Bs Mechanical and acoustical properties
62.25.-g Mechanical properties of nanoscale systems
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
62.20.D- Elasticity

Quantifying the elastic deformation behavior of bridged nanobelts

Wenjie Mai and Zhong Lin Wang

Appl. Phys. Lett. 89, 073112 (2006); http://dx.doi.org/10.1063/1.2336600 (3 pages) | Cited 29 times

Online Publication Date: 17 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A new approach for quantifying the elastic deformation behavior of one-dimensional nanostructures is presented by fitting the image profile measured using atomic force microscopy in contact mode along the entire length of a bridged/suspended nanobelt/nanowire/nanotube under different load forces. Consistently fitting the measured deformation profiles can uniquely determine if the measured data are best explained by either the clamped-clamped beam model or the free-free beam model without preassumption, and it eliminates the uncertainty in defining the central point of the suspended beam, thus, greatly increasing the precision and reliability of the measurements.
Show PACS
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
62.20.D- Elasticity
68.65.La Quantum wires (patterned in quantum wells)

p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

H. Y. Liu, S. L. Liew, T. Badcock, D. J. Mowbray, M. S. Skolnick, S. K. Ray, T. L. Choi, K. M. Groom, B. Stevens, F. Hasbullah, C. Y. Jin, M. Hopkinson, and R. A. Hogg

Appl. Phys. Lett. 89, 073113 (2006); http://dx.doi.org/10.1063/1.2336998 (3 pages) | Cited 18 times

Online Publication Date: 17 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A modification of the thickness of the low-growth-temperature component of the GaAs spacer layers in multilayer 1.3 μm InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

In situ fabrication of alumina nanotube array and photoluminescence

G. S. Huang, X. L. Wu, F. Kong, Y. C. Cheng, G. G. Siu, and Paul K. Chu

Appl. Phys. Lett. 89, 073114 (2006); http://dx.doi.org/10.1063/1.2337160 (3 pages) | Cited 7 times

Online Publication Date: 17 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Aluminum foil was anodized in aged electrolyte under high voltage. The morphology observation shows that the alumina film has a three-layer structure from bottom to top and the middle layer shows large quantities of individual alumina nanotubes. Their formation mechanism is discussed in detail. Under ultraviolet excitation, the alumina film exhibits an emission centered at ∼ 400 nm. Based on annealing behavior of the emission band and electron paramagnetic resonance result, the origin of the emission is considered to be due to optical transition in single ionized oxygen vacancy (F+ center) in the alumina. The experimental results can be expected to have favorable applications in optoelectronics and biotechnology.
Show PACS
81.07.De Nanotubes
61.46.Fg Nanotubes
78.67.Ch Nanotubes
78.55.Hx Other solid inorganic materials
82.45.Aa Electrochemical synthesis
61.72.J- Point defects and defect clusters

Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and J. H. Wolter

Appl. Phys. Lett. 89, 073115 (2006); http://dx.doi.org/10.1063/1.2336077 (3 pages) | Cited 31 times

Online Publication Date: 18 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report lasing of InAs/InGaAsP/InP (100) quantum dots (QDs) wavelength tuned into the 1.55 μm telecom region. Wavelength control of the InAs QDs in an InGaAsP/InP waveguide is based on the suppression of As/P exchange through ultrathin GaAs interlayers. The narrow ridge-waveguide QD lasers operate in continuous wave mode at room temperature on the QD ground state transition. The low threshold current density of 580 A/cm2 and low transparency current density of 6 A/cm2 per QD layer, measured in pulsed mode, are accompanied by low loss and high gain with an 80-nm-wide gain spectrum.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Dynamic behavior and phase transition of magic Al clusters on Si(111)-7×7 surfaces

Run-Wei Li, J. H. G. Owen, S. Kusano, and K. Miki

Appl. Phys. Lett. 89, 073116 (2006); http://dx.doi.org/10.1063/1.2337522 (3 pages) | Cited 7 times

Online Publication Date: 18 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By means of high-temperature scanning tunneling microscopy, the authors present a direct observation on the dynamic behavior and phase transition of magic Al clusters on Si(111)-7×7 surfaces at high temperature. When the temperature is above 500 °C, fast diffusion of magic Al clusters on Si(111)-7×7 surfaces occurs while the magic cluster phase transforms into √3×√3-Al phase on downterraces (the downstep side of a terrace). From an Arrhenius plot, the activation energy of magic Al clusters on Si(111)-7×7 surfaces was extracted to be 2.0±0.3 eV. This study supplies important information for understanding the formation and phase transition process of magic Al nanoclusters on Si(111)-7×7 surfaces.
Show PACS
68.35.Rh Phase transitions and critical phenomena
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)

Q-controlled amplitude modulation atomic force microscopy in liquids: An analysis

H. Hölscher and U. D. Schwarz

Appl. Phys. Lett. 89, 073117 (2006); http://dx.doi.org/10.1063/1.2336723 (3 pages) | Cited 9 times

Online Publication Date: 18 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An analysis of amplitude modulation atomic force microscopy in liquids is presented with respect to the application of the Q-Control technique. The equation of motion is solved by numerical and analytic methods with and without Q-Control in the presence of a simple model interaction force adequate for many liquid environments. In addition, the authors give an explicit analytical formula for the tip-sample indentation showing that higher Q factors reduce the tip-sample force. It is found that Q-Control suppresses unwanted deformations of the sample surface, leading to the enhanced image quality reported in several experimental studies.
Show PACS
68.37.Ps Atomic force microscopy (AFM)
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
62.20.M- Structural failure of materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Uncooled infrared imaging using bimaterial microcantilever arrays

D. Grbovic, N. V. Lavrik, P. G. Datskos, D. Forrai, E. Nelson, J. Devitt, and B. McIntyre

Appl. Phys. Lett. 89, 073118 (2006); http://dx.doi.org/10.1063/1.2337083 (3 pages) | Cited 28 times

Online Publication Date: 18 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on fabrication and characterization of arrays of bimaterial microcantilevers and discuss their performance as uncooled infrared imagers. An optical readout was used to simultaneously measure deflections of all microcantilevers in the array. The fabricated arrays had an average noise equivalent temperature difference (NETD) and a response time of 1.5 K and 6 ms, respectively. Some microcantilevers in the array exhibited NETD values below 500 mK, approaching our theoretical prediction of 151 mK. A unique and valuable feature of the implemented approach is its straightforward scalability to higher resolution arrays, without progressively growing complexity and cost.
Show PACS
42.79.Pw Imaging detectors and sensors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close