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28 Aug 2006

Volume 89, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 093101 (2006); http://dx.doi.org/10.1063/1.2338808 (3 pages)

Nicholas Jabari Lee, Rajiv K. Kalia, Aiichiro Nakano, and Priya Vashishta
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Coupling of waveguide and surface modes in enhanced transmission through stacking gratings

King-Yan Fong and P. M. Hui

Appl. Phys. Lett. 89, 091101 (2006); http://dx.doi.org/10.1063/1.2338796 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2006

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The physics of enhanced transmission through two metallic gratings stacked one on top of another with a lateral shift is studied. Full electromagnetic calculations via the method of rigorous coupled-wave analysis show that enhanced transmission may result even when the slits in one grating are covered by the other. Despite the channel of waveguide mode is blocked, the coupling of strongly excited surface modes in one grating to the waveguide mode in another leads to an enhanced transmission which could even be larger than that in the case of two stacking gratings unshifted with respect to one another.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Dj Gratings

Tailoring light polarization in vertical cavity surface emitting lasers by isotropic optical feedback from an extremely short external cavity

Mikel Arizaleta Arteaga, Manuel López-Amo, Hugo Thienpont, and Krassimir Panajotov

Appl. Phys. Lett. 89, 091102 (2006); http://dx.doi.org/10.1063/1.2339040 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2006

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The authors experimentally show that isotropic optical feedback from an extremely short external cavity can induce switching between the two fundamental transverse modes with orthogonal linear polarization of otherwise (without optical feedback) polarization stable vertical cavity surface emitting laser. The switching currents and the hysteresis width can be widely tuned by varying the external cavity length. Moreover, by a proper choice of the optical feedback parameters, the emission can be stabilized in any of the two linearly polarized modes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation

Martin Mikulics, Michel Marso, Siegfried Mantl, Hans Lüth, and Peter Kordoš

Appl. Phys. Lett. 89, 091103 (2006); http://dx.doi.org/10.1063/1.2339907 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2006

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The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-implanted GaAs and the annealing dynamics in these devices. An energy of 400 keV was used to implant N ions in a GaAs substrate at an ion concentration of ∼ 1×1016 cm−2. Dark current measurements as well as measurements under illumination show that the material properties rapidly change during the annealing process. Photodetectors based on nitrogen-implanted GaAs materials with annealing temperatures up to 400 °C exhibit a subpicosecond carrier lifetime up to 0.6 ps. These properties make nitrogen-ion-implanted GaAs an ideal material for ultrafast photodetectors, as alternative to low-temperature-grown GaAs.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Transmission and absorption of metallic films coated with corrugated dielectric layers

Dezhuan Han, Fengqin Wu, Xin Li, Chun Xu, Xiaohan Liu, and Jian Zi

Appl. Phys. Lett. 89, 091104 (2006); http://dx.doi.org/10.1063/1.2344851 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2006

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The authors study theoretically the optical properties of planar metallic films coated with periodically corrugated dielectric layers. Their calculations show that the transmission and absorption for these coated metallic films are enhanced considerably with respect to the uncoated ones. Enhanced transmission and absorption are found to result from the excitations of the coupled surface plasmon polaritons at the coated metallic films. Their results indicate that the introduction of periodically corrugated dielectric coating layers on metallic films offers an excellent approach to tune the reflection, transmission, and absorption properties.
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78.66.Bz Metals and metallic alloys
42.79.Wc Optical coatings
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Whispering gallery modes in high quality ZnSe/ZnMgSSe microdisks with CdSe quantum dots studied at room temperature

J. Renner, L. Worschech, A. Forchel, S. Mahapatra, and K. Brunner

Appl. Phys. Lett. 89, 091105 (2006); http://dx.doi.org/10.1063/1.2345236 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2006

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The authors observed whispering gallery modes with quality factors exceeding 2000 in ZnSe/ZnMgSSe microdisks with self-assembled CdSe quantum dots at room temperature. The microdisks were realized by electron beam lithography and reactive ion etching and mounted on a glass plate. The far field emission of the microdisks exhibits a maximum in the direction parallel to the disk plane and couples efficiently into the glass plate. The microdisk spectra were analyzed in terms of mode separation for disk diameters ranging from 1.5 to 3.0 μm. Transversal magnetic and transversal electric modes were identified.
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78.66.Hf II-VI semiconductors
78.67.Hc Quantum dots
85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning
79.70.+q Field emission, ionization, evaporation, and desorption

Rainbow refractometry with a tailored incoherent semiconductor laser source

Michael Peil, Ingo Fischer, Wolfgang Elsäßer, Saša Bakić, Nils Damaschke, Cameron Tropea, Sandra Stry, and Joachim Sacher

Appl. Phys. Lett. 89, 091106 (2006); http://dx.doi.org/10.1063/1.2338799 (3 pages) | Cited 7 times

Online Publication Date: 29 August 2006

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The authors demonstrate within a metrology experiment the applicability of a recently proposed temporally incoherent semiconductor laser source which relies on nonlinear dynamics. The realized spectrally broadband emission with an output power of 110 mW and a coherence length of only 120 μm is used in a rainbow refractometry experiment for sizing of liquid droplets, representing an important problem in industrial processes. The observed emission characteristics are attractive for implementation of modern imaging and metrology techniques which are based on the properties of well-directed, temporally incoherent light.
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07.60.Hv Refractometers and reflectometers
42.55.Px Semiconductor lasers; laser diodes
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities

H. Lohmeyer, C. Kruse, K. Sebald, J. Gutowski, and D. Hommel

Appl. Phys. Lett. 89, 091107 (2006); http://dx.doi.org/10.1063/1.2338800 (3 pages) | Cited 13 times

Online Publication Date: 29 August 2006

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The emission properties of CdSe/ZnSe quantum dots in ZnSe-based pillar microcavities are studied. All-epitaxial cavities made of ZnSSe and MgS/ZnCdSe superlattices with a single quantum-dot sheet embedded have been grown by molecular beam epitaxy. Pillar structures with diameters down to 500 nm have been realized by focused-ion-beam etching. A pronounced enhancement of the spontaneous emission rate of quantum dots coupling to the fundamental mode of the cavities is found as evidence for the Purcell effect. The enhancement by a factor of up to 3.8 depends systematically on the pillar diameter and thus on the Purcell factor of the individual pillars.
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78.67.Hc Quantum dots
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Cf Surface cleaning, etching, patterning

Transient grating measurement of surface acoustic waves in thin metal films with extreme ultraviolet radiation

R. I. Tobey, M. E. Siemens, M. M. Murnane, H. C. Kapteyn, D. H. Torchinsky, and K. A. Nelson

Appl. Phys. Lett. 89, 091108 (2006); http://dx.doi.org/10.1063/1.2336591 (3 pages) | Cited 5 times

Online Publication Date: 29 August 2006

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The authors demonstrate the use of coherent extreme ultraviolet (EUV) light in laser induced transient grating spectroscopy. In this work, the authors study the dispersion of pulsed laser induced surface acoustic waves in a thin uniform nickel film by monitoring the diffraction of 30 nm EUV light from the surface. Transient deformation of the sample surface leads to absolute diffracted intensities approaching 10−3 for 1 Å displacement, an ∼ 700-fold increase in sensitivity compared with optical probing. EUV probing provides a convenient geometry for observing short wavelength acoustic propagation.
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68.35.Iv Acoustical properties
68.60.Bs Mechanical and acoustical properties
78.47.-p Spectroscopy of solid state dynamics
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Experiment in lensless ghost imaging with thermal light

Lorenzo Basano and Pasquale Ottonello

Appl. Phys. Lett. 89, 091109 (2006); http://dx.doi.org/10.1063/1.2338657 (3 pages) | Cited 21 times

Online Publication Date: 30 August 2006

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According to a recent experiment in lensless ghost imaging with thermal light, the image is unblurred only when the object and the image planes are equally distant from the source of light. This result unambiguously supports the view that thermal light ghost imaging is basically a quantum effect. The authors present evidence (based on experiments as well as on simulation) that the blurring is nonexistent and no quantum explanation is necessary.
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42.30.Ms Speckle and moiré patterns

Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes

A. Krier, M. Stone, Q. D. Zhuang, Po-Wei Liu, G. Tsai, and H. H. Lin

Appl. Phys. Lett. 89, 091110 (2006); http://dx.doi.org/10.1063/1.2339036 (3 pages) | Cited 9 times

Online Publication Date: 30 August 2006

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Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 μm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 μm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Excitation wavelength dependence of terahertz emission from semiconductor surface

Masato Suzuki, Masayoshi Tonouchi, Ken-ichi Fujii, Hideyuki Ohtake, and Tomoya Hirosumi

Appl. Phys. Lett. 89, 091111 (2006); http://dx.doi.org/10.1063/1.2338430 (3 pages) | Cited 17 times

Online Publication Date: 30 August 2006

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The authors have measured terahertz radiation from InSb, InAs, and InGaAs excited by femtosecond optical pulses at wavelengths of 1560, 1050, and 780 nm. The amplitude of the terahertz field strongly depends on the pump wavelengths. Among the materials, the InSb emitter shows the largest terahertz emission amplitude at high power 1560 nm excitation, whereas 780 nm excitation provides the weakest. With increasing photon energy, the increase in emission amplitude from InAs is less as compared to that from InGaAs. The decrease from InSb and InAs originates in low mobilities of L or X valley carriers generated by intervalley scatterings.
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78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Theory of the ultrafast nonlinear response of terahertz quantum cascade laser structures

C. Weber, F. Banit, S. Butscher, A. Knorr, and A. Wacker

Appl. Phys. Lett. 89, 091112 (2006); http://dx.doi.org/10.1063/1.2344844 (3 pages) | Cited 14 times

Online Publication Date: 30 August 2006

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Using density matrix theory, the linear and ultrafast nonlinear optical properties of a recently developed terahertz quantum cascade laser are investigated. All relevant excitation regimes, from coherent Rabi flopping up to the scattering dominated stationary response, are covered by the theory. It is shown that the coherence transfer between different periods is important to describe optical effects.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

GaN/AlGaN ultraviolet/infrared dual-band detector

G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, and H. C. Liu

Appl. Phys. Lett. 89, 091113 (2006); http://dx.doi.org/10.1063/1.2345226 (3 pages) | Cited 15 times

Online Publication Date: 30 August 2006

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Group III-V wide band gap materials are widely used in developing solar blind, radiation-hard, high speed optoelectronic devices. A device detecting both ultraviolet (UV) and infrared (IR) simultaneously will be an important tool in fire fighting and for military and other applications. Here a heterojunction UV/IR dual-band detector, where the UV/IR detection is due to interband/intraband transitions in the Al0.026Ga0.974N barrier and GaN emitter, respectively, is reported. The UV threshold observed at 360 nm corresponds to the band gap of the Al0.026Ga0.974N barrier, and the IR response obtained in the range of 8–14 μm is in good agreement with the free carrier absorption model.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
71.20.Nr Semiconductor compounds

Efficient Yb3+:Y3Al5O12 ceramic microchip lasers

Jun Dong, Akira Shirakawa, Ken-ichi Ueda, Hideki Yagi, Takagimi Yanagitani, and Alexander A. Kaminskii

Appl. Phys. Lett. 89, 091114 (2006); http://dx.doi.org/10.1063/1.2345229 (3 pages) | Cited 24 times

Online Publication Date: 30 August 2006

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Low-threshold and highly efficient continuous-wave (cw) Yb3+:Y3Al5O12 (Yb:YAG) ceramic laser with near-diffraction-limited beam quality was demonstrated at room temperature. Dual-wavelength operation at 1030 and 1049 nm with 5% transmission of the output coupler was achieved by varying pump power intensity. Slope efficiencies of 79% at 1030 nm and 67% at 1049 nm were achieved for 1-mm-thick Yb:YAG ceramic plate (CYb = 9.8 at. %) under cw laser-diode pumping. The effect of pump power on the laser emission spectra of both wavelengths is addressed. Excellent laser performance indicates that Yb:YAG ceramic laser materials could be potentially used in high-power solid-state lasers.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.55.Xi Diode-pumped lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Experimental demonstration of high quality factor, x-dipole modes in InAs/InP quantum dot photonic crystal microcavity membranes

Simon Frédérick, Dan Dalacu, Jean Lapointe, Philip J. Poole, Geof C. Aers, and Robin L. Williams

Appl. Phys. Lett. 89, 091115 (2006); http://dx.doi.org/10.1063/1.2338662 (3 pages) | Cited 9 times

Online Publication Date: 31 August 2006

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The authors study the quality factor Q of the x-dipole mode in single missing hole defect photonic crystal microcavities in InAs/InP quantum dot membranes as a function of the structural design parameters. Photoluminescence experiments show an optimized Q in excess of 28 000 for a wavelength close to λ = 1550 nm. This is to be compared with a Q of 57 000 determined by finite difference time domain calculations. The fabrication tolerances necessary to achieve experimental Q values close to those predicted by theory are identified.
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42.82.Gw Other integrated-optical elements and systems
42.70.Qs Photonic bandgap materials

Theoretical demonstration of enhancement of light extraction of flip-chip GaN light-emitting diodes with photonic crystals

Chia-Hsin Chao, S. L. Chuang, and Tzong-Lin Wu

Appl. Phys. Lett. 89, 091116 (2006); http://dx.doi.org/10.1063/1.2338773 (3 pages) | Cited 25 times

Online Publication Date: 31 August 2006

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The authors demonstrate, using finite-difference time-domain modeling, an enhancement in the extraction efficiency of flip-chip GaN light-emitting diodes (LEDs) using photonic crystals. The authors compare the extraction efficiencies of four configurations of a flip-chip GaN LED: with and without photonic crystal (PhC) layers, with a perfect reflecting mirror, and a bottom PhC reflector on GaN in combination with a top PhC extractor on sapphire. The authors show that, by using a photonic crystal layer as a bottom reflector, they can enhance the extraction efficiency similar to that of a mirror, yet the PhC reflector has the advantage that the metallic mirror loss can be avoided.
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85.60.Jb Light-emitting devices
42.82.Gw Other integrated-optical elements and systems
85.30.De Semiconductor-device characterization, design, and modeling

How to erase surface plasmon fringes

Aurelien Drezet, Andreas Hohenau, Andrey L. Stepanov, Harald Ditlbacher, Bernhard Steinberger, Nicole Galler, Franz R. Aussenegg, Alfred Leitner, and Joachim R. Krenn

Appl. Phys. Lett. 89, 091117 (2006); http://dx.doi.org/10.1063/1.2339043 (3 pages) | Cited 39 times

Online Publication Date: 31 August 2006

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The authors report on the imaging of surface plasmon polaritons (SPPs) by leakage radiation microscopy in both direct and Fourier space. They show that manipulating the intensity distribution in the Fourier plane allows them to selectively image SPP beams propagating along specific directions. Thereby individual SPP beams are made accessible for direct quantitative analysis which is important in cases where the interaction between different SPP beams leads to interference fringes obscuring the individual components.
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07.60.Pb Conventional optical microscopes
42.30.Kq Fourier optics

All-fiber picosecond laser source based on nonlinear spectral compression

M. Rusu and O. G. Okhotnikov

Appl. Phys. Lett. 89, 091118 (2006); http://dx.doi.org/10.1063/1.2339954 (3 pages) | Cited 5 times

Online Publication Date: 31 August 2006

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The authors report the realization of an all-fiber system emitting high-quality ultrashort powerful light pulses at 1060 nm. The oscillator-amplifier system is intended for compact visible light generation via frequency conversion. Optical nonlinearity in a fiber amplifier is employed to compress the spectrum of pulses negatively prechirped in a hollow core photonic bandgap fiber. Second-harmonic generation in a periodically poled crystal is demonstrated.
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42.55.Wd Fiber lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Fiber-optic temperature sensor based on interference of selective higher-order modes

Enbang Li, Xiaolin Wang, and Chao Zhang

Appl. Phys. Lett. 89, 091119 (2006); http://dx.doi.org/10.1063/1.2344835 (3 pages) | Cited 42 times

Online Publication Date: 31 August 2006

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A fiber-optic temperature sensor based on the interference of selective higher-order modes in circular optical fibers is described. The authors demonstrate that by coupling the LP01 mode in a standard single-mode fiber to the LP0m modes in a multimode fiber, and utilizing the interference of the higher-order modes, a fiber-optic temperature sensor which has an extremely simple structure and is suitable for high-temperature measurements can be constructed. The sensing principle, temperature measurement experiments, and results are presented.
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42.81.Pa Sensors, gyros
07.20.Dt Thermometers
07.60.Ly Interferometers
07.20.Ka High-temperature instrumentation; pyrometers

Electroluminescence from coupled InGaAs/GaAs quantum dots embedded in lateral p-i-n junctions

Xiulai Xu, Aleksey Andreev, David A. Williams, and John R. A. Cleaver

Appl. Phys. Lett. 89, 091120 (2006); http://dx.doi.org/10.1063/1.2344934 (3 pages) | Cited 2 times

Online Publication Date: 31 August 2006

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The authors report an observation of coupling in single quantum dot molecules embedded in lateral p-i-n junctions using electroluminescence spectra. With a graded dot density wafer, electroluminescence spectra from uncoupled and coupled stacked quantum dots have been observed. For coupled pairs of quantum dots, an anticrossing of direct and indirect recombinations is observed with a forward biased electric field where the two dots are in resonance.
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78.60.Fi Electroluminescence
73.63.Kv Quantum dots
78.67.Hc Quantum dots
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Direct measurement of the linewidth enhancement factor by optical heterodyning of an amplitude-modulated quantum cascade laser

Thierry Aellen, Richard Maulini, Romain Terazzi, Nicolas Hoyler, Marcella Giovannini, Jérôme Faist, Stéphane Blaser, and Lubos Hvozdara

Appl. Phys. Lett. 89, 091121 (2006); http://dx.doi.org/10.1063/1.2345035 (3 pages) | Cited 20 times

Online Publication Date: 31 August 2006

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A measurement of the linewidth enhancement factor α of a distributed feedback quantum cascade laser is presented. The measurement is based on a heterodyning experiment, in which one of the lasers is modulated at radio frequency. A value of α = 0.02±0.20 is obtained for a modulation frequency of 500 MHz. As the frequency is decreased, α increases and is consistent with a thermal chirp effect.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Intracavity thermal loading measurements and evaluation of the intrinsic fluorescence quantum efficiency in Yb3+:LiNbO3:MgO lasers

M. O. Ramírez, D. Jaque, and L. E. Bausá

Appl. Phys. Lett. 89, 091122 (2006); http://dx.doi.org/10.1063/1.2345241 (3 pages) | Cited 2 times

Online Publication Date: 1 September 2006

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Direct intracavity thermal loading measurements have been performed on diode pumped Yb3+ doped LiNbO3:MgO laser crystals. The fractional thermal loading has been found to be strongly dependent on the Yb3+ concentration, decreasing more than 40% when the Yb3+ concentration increases from 0.5 to 2 at. %. From the analysis of the concentration dependence of the fractional thermal loading, the intrinsic fluorescence quantum efficiency (free of radiation trapping) of Yb3+ ions in LiNbO3:MgO crystals has been determined and the role of radiation trapping among Yb3+ ions is discussed.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Xi Diode-pumped lasers
37.10.Vz Mechanical effects of light on atoms, molecules, and ions

Self-assembled InAs quantum wire lasers on (001)InP at 1.6 μm

F. Suárez, D. Fuster, L. González, Y. González, J. M. García, and M. L. Dotor

Appl. Phys. Lett. 89, 091123 (2006); http://dx.doi.org/10.1063/1.2335775 (3 pages) | Cited 3 times

Online Publication Date: 1 September 2006

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In this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires (QWRs) as active zone and aluminum-free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP)5/(GaInAs)4 lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get a uniform QWR distribution. Lasing emission is observed at a wavelength of ∼ 1.66 μm up to 270 K from 15×3000 μm2 devices, with a threshold current density at that temperature of 2 kA/cm2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.07.Vb Quantum wires
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Rollable multicolor display using electrically induced blueshift of a cholesteric reactive mesogen mixture

Haiqing Xianyu, Tsung-Hsien Lin, and Shin-Tson Wu

Appl. Phys. Lett. 89, 091124 (2006); http://dx.doi.org/10.1063/1.2345597 (3 pages) | Cited 23 times

Online Publication Date: 1 September 2006

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Electrically controllable blueshift of the reflection band in a planar cholesteric reactive mesogen cell is observed. The responsible mechanism is electric-field-induced Helfrich deformation [ J. Chem. Phys. 55, 839 (1971) ]. The modified director configuration can be solidified by photopolymerizing the reactive mesogens when a voltage is applied. The correlation between the director configuration and optical properties is validated by the scanning electron microscope photos and the transmission spectra of a planar and an undulated cholesteric film. With masked curing at different voltages, a rollable multicolor display is demonstrated.
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42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Vx Polymer liquid crystals
85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
82.35.-x Polymers: properties; reactions; polymerization

All-optical micromechanical chemical sensors

T. H. Stievater, W. S. Rabinovich, M. S. Ferraro, N. A. Papanicolaou, J. B. Boos, R. A. McGill, J. L. Stepnowski, and E. J. Houser

Appl. Phys. Lett. 89, 091125 (2006); http://dx.doi.org/10.1063/1.2344936 (3 pages) | Cited 4 times

Online Publication Date: 1 September 2006

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The authors describe experimental results from micromechanical resonators coated with a chemoselective polymer that detect chemical vapors from volatile organic compounds using all-optical interrogation. The shift in the resonant frequency of the gold microbeam is read out using photothermal actuation and microcavity interferometry. Response times of less than 5 s are achieved for vapor concentrations as low as 60 ppm using optical powers of a few megawatts.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems
42.70.Jk Polymers and organics
07.60.Ly Interferometers
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