APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Aug 2006

Volume 89, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 093101 (2006); http://dx.doi.org/10.1063/1.2338808 (3 pages)

Nicholas Jabari Lee, Rajiv K. Kalia, Aiichiro Nakano, and Priya Vashishta
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Mesa-size-dependent color contrast in flip-chip blue/green two-color InGaN/GaN multi-quantum-well micro-light-emitting diodes

Horng-Shyang Chen, Dong-Ming Yeh, Chih-Feng Lu, Chi-Feng Huang, Yen-Cheng Lu, Cheng-Yen Chen, Jian-Jang Huang, and C. C. Yang

Appl. Phys. Lett. 89, 093501 (2006); http://dx.doi.org/10.1063/1.2339034 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors fabricate blue/green two-wavelength, InGaN/GaN quantum-well (QW), flip-chip micro-light-emitting diodes (μ-LEDs) of different mesa sizes by stacking QWs of different indium contents. It is found that the blue/green contrast ratio of such a μ-LED increases with the mesa size. The relatively stronger blue intensity in a device of a larger mesa area is due to its higher operation junction temperature such that hole migration can be enhanced through thermally exciting holes to escape from the QW (green emitting) closest to the p-type layer and to be captured by the neighboring QWs (blue emitting). The higher junction temperature in such a μ-LED of a larger mesa area is due to its smaller ratio of the sidewall surface area over the active volume, leading to the less effective sidewall heat radiation and light extraction.
Show PACS
85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Author Select

Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides

Prakaipetch Punchaipetch, Yukiharu Uraoka, Takashi Fuyuki, Atsushi Tomyo, Eiji Takahashi, Tsukasa Hayashi, Atsushi Sano, and Sadayoshi Horii

Appl. Phys. Lett. 89, 093502 (2006); http://dx.doi.org/10.1063/1.2339562 (3 pages) | Cited 13 times

Online Publication Date: 29 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High-performance floating gate memory devices of Si nanocrystal (NC) dots on HfO2 gate oxide were fabricated at temperatures below 400 °C. A large counterclockwise hysteresis of 5.2 V, at an applied voltage of +6 V, and a stored charge density of 6×1012 cm−2 were observed. Moreover, the smaller band offset of the high-κ tunneling layer resulted in higher charge tunneling probabilities towards the Si NC dots than those observed with a SiO2 tunneling layer. Advantages in terms of scaling for a high-performance and stable reliability memory device are confirmed.
Show PACS
85.30.-z Semiconductor devices
84.30.Sk Pulse and digital circuits

Electron emission from discontinuous gold-carbon compound film on etched porous aluminum oxide

Zengmei Wang, Dejie Li, Baolun Yao, and Jian Wang

Appl. Phys. Lett. 89, 093503 (2006); http://dx.doi.org/10.1063/1.2340018 (3 pages) | Cited 9 times

Online Publication Date: 29 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An electron emitter composed of discontinuous gold-carbon compound conducting film on etched porous aluminum oxide (PAO) layer is proposed in this letter. The PAO layer is located between two 30 μm spaced cathode and grid electrode, and is etched in diluted phosphoric acid to introduce roughness on the soda lime glass surface and enhance discontinuity of the conducting film. Electron emission with good uniformity and stability is reproducibly obtained. The electron emission efficiency is higher than 2% at an anode voltage of 3 kV.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)

Ring oscillator made of organic thin-film transistors produced by self-organized process on plastic substrate

Seung Hoon Han, Sang Mi Cho, Jun Hee Kim, Jae Won Choi, Jin Jang, and Myung Hwan Oh

Appl. Phys. Lett. 89, 093504 (2006); http://dx.doi.org/10.1063/1.2338526 (3 pages) | Cited 15 times

Online Publication Date: 30 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors studied the fabrication of a ring oscillator consisting of organic inverters showing no hysteresis in output characteristics. They designed and fabricated the ring oscillator with bootstrapping inverters made of pentacene organic thin-film transistors on plastic produced by self-organized process, exhibiting the field-effect mobility of ∼ 0.6 cm2/V s, on/off current ratio of 107, and threshold voltage of −5 V. The oscillation frequency of 3 kHz and signal propagation delay of 15 μs per stage were achieved for an 11-stage oscillator with a supply voltage of 20 V.
Show PACS
84.30.Ng Oscillators, pulse generators, and function generators
84.30.Jc Power electronics; power supply circuits
81.05.Hd Other semiconductors
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Linking compaction dynamics to the flow properties of powders

G. Lumay, N. Vandewalle, C. Bodson, L. Delattre, and O. Gerasimov

Appl. Phys. Lett. 89, 093505 (2006); http://dx.doi.org/10.1063/1.2338801 (3 pages) | Cited 7 times

Online Publication Date: 31 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have investigated the flow properties of powders by using two classical techniques based on the shear stress measurements and the count of intermittent avalanches, respectively. Results are compared with measurements of the compaction dynamics. Strong correlations are evidenced between compaction relaxation parameters and free flow characteristics. Those correlations are given by semiempirical laws based on physical arguments. This work opens perspectives in powder technology and the knowledge on granular matter.
Show PACS
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.43.Gt Powders, porous materials
81.40.Lm Deformation, plasticity, and creep
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared

Andrew Hood, Darin Hoffman, Binh-Minh Nguyen, Pierre-Yves Delaunay, Erick Michel, and Manijeh Razeghi

Appl. Phys. Lett. 89, 093506 (2006); http://dx.doi.org/10.1063/1.2345020 (3 pages) | Cited 14 times

Online Publication Date: 31 August 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 μm exhibit an R0A of ∼ 7 Ω cm2 and a Johnson-limited detectivity of 4.03×1010 cm Hz1/2 W−1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 μm.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors

Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

D. K. Hwang, Kimoon Lee, Jae Hoon Kim, Seongil Im, Ji Hoon Park, and Eugene Kim

Appl. Phys. Lett. 89, 093507 (2006); http://dx.doi.org/10.1063/1.2345243 (3 pages) | Cited 55 times

Online Publication Date: 1 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report on the electrical reliabilities of poly-4-vinyl phenol (PVP) and SiO2 gate dielectrics for pentacene thin-film transistors (TFTs). SiO2 films were grown by dry oxidation and PVP films were prepared by spin coating and subsequent cross-linking at 175 °C for 15 min. The pentacene TFTs with the PVP cured for 15 min exhibited a large hysteresis and an abnormal drain-current increase under a gate bias stress over time, while the other TFT with SiO2 displayed a small hysteresis but its drain current decreases with time. The hysteresis behaviors induced by PVP and SiO2 were opposite to each other in the gate bias swing direction, due to the difference in hysteresis mechanism between the two types of TFTs. Comparing their hysteresis behavior, the authors fabricated a far more reliable pentacene TFT with PVP by extending the PVP curing time to 1 h. Our improved device with PVP exhibited no hysteresis and persistent toughness to the gate bias stress.
Show PACS
85.30.Tv Field effect devices
81.16.Pr Micro- and nano-oxidation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Barrier tuning in thin PtSi/Si contacts

Yongping Ding and S. A. Campbell

Appl. Phys. Lett. 89, 093508 (2006); http://dx.doi.org/10.1063/1.2344847 (3 pages)

Online Publication Date: 1 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
PtSi/Si contacts were studied as a function of thickness. A change of Schottky barrier height up to 100 mV from its bulk value was detected when PtSi thickness decreased to 6 nm. One explanation is the quantum size effect, generally confirming theoretical predictions. This effect also results in an increase of contact resistance in Ohmic PtSi/p-Si contacts. Furthermore, the nanoscale PtSi thin layer presented a poor electron screen from the outside contact layer of Al. It was found that for PtSi>50 nm, the contact properties of Al/PtSi/Si is unchanged by the presence of the Al layer.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
72.30.+q High-frequency effects; plasma effects

Self-heating effects in polycrystalline silicon thin film transistors

Antonio Valletta, Alessandro Moroni, Luigi Mariucci, Alessandra Bonfiglietti, and Guglielmo Fortunato

Appl. Phys. Lett. 89, 093509 (2006); http://dx.doi.org/10.1063/1.2337108 (3 pages) | Cited 6 times

Online Publication Date: 1 September 2006

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Self-heating effects are investigated in polycrystalline silicon thin film transistors by combining experimental measurements and two-dimensional numerical simulations. From the thermodynamic model the temperature distribution was extracted and found rather uniform along the channel. This allowed the authors to introduce a simplified method to determine the channel temperature when the device is affected by self-heating effects.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close