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28 Aug 2006

Volume 89, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 89, 093101 (2006); http://dx.doi.org/10.1063/1.2338808 (3 pages)

Nicholas Jabari Lee, Rajiv K. Kalia, Aiichiro Nakano, and Priya Vashishta
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Pressure-induced structural transformations in cadmium selenide nanorods

Nicholas Jabari Lee, Rajiv K. Kalia, Aiichiro Nakano, and Priya Vashishta

Appl. Phys. Lett. 89, 093101 (2006); http://dx.doi.org/10.1063/1.2338808 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2006

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Pressure induced structural transformations in cadmium selenide (CdSe) nanorods are studied using parallel molecular dynamics. Nanorods (4.4 nm in diameter and 4.4 to 53 nm in length) are embedded in a liquid and subjected to pressure. Reversible structural transformations are observed from wurtzite to a single domain rocksalt crystal phase. The simulation results reveal a decrease in transformation pressure with rod length. The transformation mechanism involves atomic shifts within the (0001) plane of the wurtzite structure and is similar to the one observed in electronic structure calculations of pressure-induced structural transformation in bulk CdSe.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
64.70.K- Solid-solid transitions
62.50.-p High-pressure effects in solids and liquids
61.46.-w Structure of nanoscale materials

Dispersion of surface plasmon polaritons on silver film with rectangular hole arrays in a square lattice

Ming-Wei Tsai, Tzu-Hung Chuang, Hsu-Yu Chang, and Si-Chen Lee

Appl. Phys. Lett. 89, 093102 (2006); http://dx.doi.org/10.1063/1.2338886 (3 pages) | Cited 16 times

Online Publication Date: 28 August 2006

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Extraordinary optical transmission through a two-dimensional Ag film in the far infrared region was demonstrated. The holes were rectangular and arranged in a square lattice. When either the width or the length size of the rectangular holes was close to the half of the lattice constant a/2, the degenerate (±1,0) Ag/Si or (0,±1) Ag/Si modes split into two peaks. Additionally, the surface plasmon dispersion relations of the square hole array with different aspect ratios of holes were measured. As the aspect ratio increased, the surface plasmon tended to couple strongly with the local charge dipole oscillations in a direction perpendicular to the long edges. The charge dipole oscillation parallel to the long edges gradually disappeared. This is confirmed by experiments using the polarized light. The dynamic properties of the surface plasmon dispersion relations show the interaction among localized surface plasmons and its mechanism.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.30.Er Solid metals and alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Improved performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic nanoparticles

D. Derkacs, S. H. Lim, P. Matheu, W. Mar, and E. T. Yu

Appl. Phys. Lett. 89, 093103 (2006); http://dx.doi.org/10.1063/1.2336629 (3 pages) | Cited 184 times

Online Publication Date: 28 August 2006

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An engineered enhancement in short-circuit current density and energy conversion efficiency in amorphous silicon p-i-n solar cells is achieved via improved transmission of electromagnetic radiation arising from forward scattering by surface plasmon polariton modes in Au nanoparticles deposited above the amorphous silicon film. For a Au nanoparticle density of ∼ 3.7×108 cm−2, an 8.1% increase in short-circuit current density and an 8.3% increase in energy conversion efficiency are observed. Finite-element electromagnetic simulations confirm the expected increase in transmission of electromagnetic radiation at visible wavelengths, and suggest that substantially larger improvements should be attainable for higher nanoparticle densities.
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84.60.Jt Photoelectric conversion
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Influence of the local adsorption environment on the intramolecular contrast of organic molecules in noncontact atomic force microscopy

Bartosz Such, Domenique Weiner, André Schirmeisen, and Harald Fuchs

Appl. Phys. Lett. 89, 093104 (2006); http://dx.doi.org/10.1063/1.2345235 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2006

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Thin epitaxial layers of the organic molecule 3,4,9,10-perylenetetracarboxylic dianhydrite on a Cu(111) surface were imaged using noncontact atomic force microscopy in ultrahigh vacuum. The second layer molecules show a distinct intramolecular structure, which is compared to the internal charge distribution of the molecule. The molecules in the first layer, though, exhibit no detectable intramolecular features. This effect is discussed with respect to the presence of the metallic substrate for the first layer molecules, which demonstrates the strong influence of the local adsorption environment on the internal electronic properties of organic molecules.
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68.43.Mn Adsorption kinetics
68.37.Ps Atomic force microscopy (AFM)
68.55.-a Thin film structure and morphology

Fe adatoms along Bi nanolines on H/Si(001)

W. Orellana and R. H. Miwa

Appl. Phys. Lett. 89, 093105 (2006); http://dx.doi.org/10.1063/1.2236558 (3 pages) | Cited 7 times

Online Publication Date: 29 August 2006

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The stability and electronic and magnetic properties of Fe atoms adsorbed on the self-assembled Bi-line nanostructure on the H/Si(001) surface are addressed by spin-density functional calculations. Our results show that Fe adatoms are much more stable on sites closer to the Bi nanolines suggesting that they form one-dimensional atomic arrays. The most stable structure occurs on a missing dimer line beside the Bi dimers, which corresponds to an array with distances between Fe adatoms of about 8 Å. In this array the irons are coupled antiferromagnetically with spin magnetic moment of about 1.5μB per Fe atom, whereas the coupling exchange interactions is found to be of about 14.4 meV. We also estimate a large magnetic anisotropy energy of 3 meV/at. originated on the structural anisotropy of the Fe-adatom site. In addition, the electronic band structure of the Fe array at the most stable structure shows a magnetic half-metal behavior.
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68.43.Hn Structure of assemblies of adsorbates (two- and three-dimensional clustering)
73.22.-f Electronic structure of nanoscale materials and related systems
81.16.Dn Self-assembly
75.50.Ee Antiferromagnetics
75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Et Exchange and superexchange interactions

Large-scale ordering of porous Si using anodic aluminum oxide grown by directed self-assembly

Jia Zou, Xiaoyuan Qi, Liwen Tan, and Bethanie J. H. Stadler

Appl. Phys. Lett. 89, 093106 (2006); http://dx.doi.org/10.1063/1.2337560 (3 pages) | Cited 3 times

Online Publication Date: 29 August 2006

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Porous Si with perfect long range order (mm2 scale) was obtained using an integrated mask of ordered anodic aluminum oxide (AAO). This represents an increase of many orders of magnitude in the ordered domain size compared with porous Si made with self-assembled AAO masks. Here, master stamps composed of silicon nitride posts (180 nm diameter, 400 nm spacing) were imprinted into Al films that were grown onto nitride-coated Si wafers. The Al films were then anodized and the resulting ordered, nanoporous pattern was transferred into the Si using reactive ion etching. The stamps could be reused a multitude of times to produce exact replicas.
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81.05.Cy Elemental semiconductors
81.05.Rm Porous materials; granular materials
81.05.Bx Metals, semimetals, and alloys
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.Dn Self-assembly
81.65.Cf Surface cleaning, etching, patterning

Resistivity scaling in single-walled carbon nanotube films patterned to submicron dimensions

Ashkan Behnam, Leila Noriega, Yongho Choi, Zhuangchun Wu, Andrew G. Rinzler, and Ant Ural

Appl. Phys. Lett. 89, 093107 (2006); http://dx.doi.org/10.1063/1.2339029 (3 pages) | Cited 27 times

Online Publication Date: 29 August 2006

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The authors describe efficient patterning of transparent, conductive single-walled carbon nanotube thin films by photolithography and e-beam lithography followed by reactive ion etching, and study the transport characteristics of the films patterned down to 200 nm lateral dimensions. The resistivity of the films is independent of device length, while increasing over three orders of magnitude compared to the bulk films, as their width and thickness shrink. This behavior is explained by a geometrical argument. Such “top-down” patterning of nanotube films should permit their integration into submicron device structures; however, the strong resistivity scaling will have to be taken into account.
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73.63.Fg Nanotubes
81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation

Experimental investigation on pressurized liquid in confining nanoenvironment

Falgun B. Surani, Aijie Han, and Yu Qiao

Appl. Phys. Lett. 89, 093108 (2006); http://dx.doi.org/10.1063/1.2339035 (3 pages) | Cited 8 times

Online Publication Date: 29 August 2006

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In this letter, the authors report the experimental observations of pressure induced liquid motions in a confining nanoporous gel. As the pressure is sufficiently high, water molecules can move out of the initially energetically favorable gel matrix and enter the hydrophobic nanopores. As the pressure is lowered, this process is irreversible, leading to the pronounced hysteresis of sorption isotherm. This phenomenon is essential to developing advanced energy absorption systems. A first-order thermodynamics analysis is presented.
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47.56.+r Flows through porous media
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
68.43.Mn Adsorption kinetics
65.20.-w Thermal properties of liquids
47.60.-i Flow phenomena in quasi-one-dimensional systems

Residual stress minimum in nanocrystalline diamond films

M. Vila, M. Amaral, F. J. Oliveira, R. F. Silva, A. J. S. Fernandes, and M. R. Soares

Appl. Phys. Lett. 89, 093109 (2006); http://dx.doi.org/10.1063/1.2339042 (3 pages) | Cited 7 times

Online Publication Date: 29 August 2006

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Nanocrystalline diamond films have been deposited on silicon nitride substrates by hot filament chemical vapor deposition. Gas mixtures of CH4–H2–Ar were used with variation of the Ar/H2 ratio in order to study the influence of the Ar content on the formation of nondiamond phases at the grain boundaries and thus in the film residual stress assessed by x-ray diffraction techniques. By varying this ratio it is possible to optimize conditions, decreasing the film’s residual stress to a minimum of 0.09 GPa.
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68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.46.-w Structure of nanoscale materials
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes

Y. F. Li, R. Hatakeyama, T. Kaneko, T. Izumida, T. Okada, and T. Kato

Appl. Phys. Lett. 89, 093110 (2006); http://dx.doi.org/10.1063/1.2339931 (3 pages) | Cited 16 times

Online Publication Date: 29 August 2006

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Electronic transport properties of Cs-encapsulated double-walled carbon nanotubes (DWNTs) synthesized via a plasma irradiation method are investigated by fabricating them as field-effect transistor devices. The authors’ results indicate that Cs-encapsulated DWNTs exhibit a high performance n-type characteristic in contrast to ambipolar behavior of pristine DWNTs. Coulomb blockade oscillations are observed on the Cs-encapsulated DWNTs at low temperatures. In addition, it is found that the semiconducting characteristics of the as-synthesized Cs-encapsulated DWNTs can possibly be controllable by adjusting applied negative dc bias voltages during the plasma synthesis process.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices
85.35.Ds Quantum interference devices

Probing the intrinsic conductivity of multiwalled carbon nanotubes

Mikhail Zamkov, Ali S. Alnaser, Bing Shan, Zenghu Chang, and Patrick Richard

Appl. Phys. Lett. 89, 093111 (2006); http://dx.doi.org/10.1063/1.2340537 (3 pages) | Cited 3 times

Online Publication Date: 29 August 2006

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The authors report the two-photon electron emission study of quantum transport parameters in multiwalled carbon nanotubes. The present experimental approach is based on measurements of the electron-phonon scattering dynamics and does not employ any electrical contacts, which dramatically reduces the uncertainty in the determination of an electron mean-free path l. It is found that near the Fermi level (<0.1 eV) the ballistic travel of electrons averages around 4 μm, which is comparable to the nanotube length, whereas in high-current regime ( ≥ 0.3 eV) l decreases to less than 1 μm.
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73.63.Fg Nanotubes
73.23.Ad Ballistic transport
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
71.38.-k Polarons and electron-phonon interactions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Conformal conversion from helical hexagonal InN microtubes to In2O3 counterparts

Shudong Luo, Weiya Zhou, Zengxing Zhang, Jun Shen, Lifeng Liu, Wenjun Ma, Xiaowei Zhao, Dongfang Liu, Li Song, Yanjuan Xiang, Jianjun Zhou, Sishen Xie, and Weiguo Chu

Appl. Phys. Lett. 89, 093112 (2006); http://dx.doi.org/10.1063/1.2245438 (3 pages) | Cited 4 times

Online Publication Date: 29 August 2006

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Cubic In2O3 microtubes were prepared by thermally oxidizing InN counterparts under controlled conditions. Similar to the starting InN sample, the converted In2O3 microtubes are hexagonal in cross section and exhibit helical motifs of both right-handed and left-handed architectures with helical angles of 0°–30°. InN microtubes can be retrieved by renitridation of the oxide microtubes. This work demonstrates that it is feasible to fabricate specific oxide nano-/microstructures from its corresponding nitride counterparts via controlled oxidation manner and vice versa. Temperature-dependent Raman scattering in both InN and In2O3 microtubes was measured and obvious downshifts of Raman modes were observed with increasing temperature.
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81.16.Pr Micro- and nano-oxidation
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.65.Mq Oxidation
78.30.Hv Other nonmetallic inorganics

Field emission from honeycomblike network of vertically aligned AlN nanoplatelets

Y. B. Tang, H. T. Cong, and H.-M. Cheng

Appl. Phys. Lett. 89, 093113 (2006); http://dx.doi.org/10.1063/1.2337277 (3 pages) | Cited 6 times

Online Publication Date: 30 August 2006

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Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10–100 nm. Field emission (FE) measurements showed that this nanostructure has a low turn-on field of 3.2–5.0 V/μm and a threshold field of 7.8–12.1 V/μm at sample-anode distances of 50–100 μm. The fluctuation of FE current with density of 10 mA/cm2 over 5 h is lower than 3%. The low turn-on and threshold fields and the small fluctuation of current demonstrate that this two-dimensional AlN nanostructure is a promising FE material.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials

Intrinsic characteristics of semiconducting oxide nanobelt field-effect transistors

Yi Cheng, P. Xiong, Lenwood Fields, J. P. Zheng, R. S. Yang, and Z. L. Wang

Appl. Phys. Lett. 89, 093114 (2006); http://dx.doi.org/10.1063/1.2338754 (3 pages) | Cited 36 times

Online Publication Date: 30 August 2006

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Field-effect transistors (FETs) based on individual semiconducting oxide (SnO2 and ZnO) nanobelts with multiterminal electrical contacts have been fabricated and characterized. Simultaneous two-terminal and four-terminal measurements enable direct correlation of the FET characteristics with the nature of the contacts. Devices with high-resistance non-Ohmic contacts exhibit a Schottky barrier FET behavior. In contrast, low-resistance Ohmic contacts on the nanobelt lead to high-performance n-channel depletion mode FETs with well-defined linear and saturation regimes, large “on” current, and an on/off ratio as high as 107. The FET characteristics of such devices show a significant modification by a 0.2% H2 gas flow at room temperature. The excellent intrinsic characteristics of these nanobelt FETs make them ideal candidates as nanoscale biological and chemical sensors based on field-effect modulation of the channel conductance.
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85.30.Tv Field effect devices
73.63.Rt Nanoscale contacts
73.40.Ns Metal-nonmetal contacts

Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications

Sung-Soo Yim, Moon-Sang Lee, Ki-Su Kim, and Ki-Bum Kim

Appl. Phys. Lett. 89, 093115 (2006); http://dx.doi.org/10.1063/1.2338793 (3 pages) | Cited 33 times

Online Publication Date: 30 August 2006

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The formation of Ru nanocrystals is demonstrated on a SiO2 substrate by plasma enhanced atomic layer deposition using diethylcyclopentadienyl ruthenium and NH3 plasma. The island growth of Ru was observed at the initial stages of the film formation up to a nominal thickness of 11.1 nm. A maximum Ru nanocrystal spatial density of 9.7×1011 /cm2 was achieved with an average size of 3.5 nm and standard deviation of the size of 20%. Electron charging/discharging effect in the Ru nanocrystals is demonstrated by measuring the flatband voltage shift in the capacitance-voltage measurement of metal-oxide-semiconductor memory capacitor structure.
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81.07.Bc Nanocrystalline materials
52.77.Dq Plasma-based ion implantation and deposition
61.46.Hk Nanocrystals
73.63.Bd Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Enhanced Bragg reflections from size-matched heterostructure photonic crystal thin films prepared by the Langmuir-Blodgett method

M. Bardosova, M. E. Pemble, I. M. Povey, R. H. Tredgold, and D. E. Whitehead

Appl. Phys. Lett. 89, 093116 (2006); http://dx.doi.org/10.1063/1.2339031 (3 pages) | Cited 13 times

Online Publication Date: 30 August 2006

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The Langmuir-Blodgett method was used to engineer photonic crystal thin films of an AB architecture. Structures were studied by transmittance and reflectance spectroscopies. For an AB structure in which the silica particle diameter B is twice that of A, reflectance features associated with the first order Bragg peak for the “A” domain are only observed when the structure is probed from the A side of the structure. Furthermore, this feature is enhanced in intensity compared to that for a structure consisting solely of A particles. These findings are attributed to a matching of first and second order Bragg processes.
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78.66.Nk Insulators
42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics

Ferromagnetic ZnO bicrystal nanobelts fabricated in low temperature

Congkang Xu, Junghwan Chun, Keehan Rho, Hyo Jin Lee, Yoon Hee Jeong, Dong-Eon Kim, Bonghwan Chon, Sangsu Hong, and Taiha Joo

Appl. Phys. Lett. 89, 093117 (2006); http://dx.doi.org/10.1063/1.2339048 (3 pages) | Cited 7 times

Online Publication Date: 30 August 2006

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Zinc oxide bicrystal nanobelts were fabricated via a vapor phase transport of a powder mixture of Zn, BiI3, and MnCl2∙H2O at temperatures as low as 300 °C. The bicrystal nanobelts, growing along the [01math3] direction, have the widths of 40–150 nm and lengths of tens of microns. The energy dispersive x-ray spectroscopy result verifies that the bicrystal nanobelts contain higher concentration of both Bi and Mn along the grain boundary. The investigation of the growth mechanism proposes that MnBi may induce the formation of bicrystal nanobelts. Photoluminescence spectra show that the ultraviolet emission of the bicrystal nanobelts has a blueshift of 18 meV as compared to Bi–ZnO nanowires at 10 K. The bicrystal nanobelts also exhibit ferromagnetism at room temperature.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Tt Fine-particle systems; nanocrystalline materials
78.55.Et II-VI semiconductors
81.10.Bk Growth from vapor
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Anisotropic x-ray absorption effects in the optical luminescence yield of ZnO nanostructures

R. A. Rosenberg, G. K. Shenoy, L.-C. Tien, D. Norton, S. Pearton, X. H. Sun, and T. K. Sham

Appl. Phys. Lett. 89, 093118 (2006); http://dx.doi.org/10.1063/1.2245440 (3 pages) | Cited 7 times

Online Publication Date: 30 August 2006

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The authors have found that the directionality of the orbital populated following core-level x-ray absorption of a hexagonal nanostructure has a strong influence on the resulting optical luminescence yield spectra. For ZnO, there is an enhancement of the band gap exciton luminescence following O 1s to 2pz relative to 2px,y excitation. The defect luminescence O 1s excitation spectrum also shows sensitivity to the nature of the defect (surface or bulk).
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78.70.Dm X-ray absorption spectra
78.55.Et II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
71.20.Nr Semiconductor compounds
71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors

Thermoelastic martensitic transformation in ferromagnetic Ni–Fe–Al alloys: Effect of site disorder

S. N. Kaul, B. Annie D’ Santhoshini, A. C. Abhyankar, L. Fernández Barquín, and Paul Henry

Appl. Phys. Lett. 89, 093119 (2006); http://dx.doi.org/10.1063/1.2337271 (3 pages) | Cited 10 times

Online Publication Date: 31 August 2006

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Thermoelastic martensitic transformation from a face-centered-cubic austenite phase to tetragonal martensite phase has been established in a new ternary ferromagnetic alloy system Ni–Fe–Al (“prepared” in different states of site disorder) based on the results of a detailed neutron diffraction, electrical resistivity, and magnetization studies. Ordered (annealed) Ni55Fe20Al25 has a high Curie temperature TC⪢300 K and an extremely wide temperature range over which martensite and austenite phases coexist. By comparison, site-disordered (quenched) Ni55Fe20Al25 has a lower TC ( = 225 K), higher ductility (shape memory effect), higher saturation magnetization, and a very well-defined martensitic transformation around TC.
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75.50.Bb Fe and its alloys
81.30.Kf Martensitic transformations
64.70.K- Solid-solid transitions
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.40.Jj Elasticity and anelasticity, stress-strain relations

Plasmonic laser antenna

Ertugrul Cubukcu, Eric A. Kort, Kenneth B. Crozier, and Federico Capasso

Appl. Phys. Lett. 89, 093120 (2006); http://dx.doi.org/10.1063/1.2339286 (3 pages) | Cited 127 times

Online Publication Date: 31 August 2006

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The authors have demonstrated a surface plasmon device composed of a resonant optical antenna integrated on the facet of a commercial diode laser, termed a plasmonic laser antenna. This device generates enhanced and spatially confined optical near fields. Spot sizes of a few tens of nanometers have been measured at a wavelength ∼ 0.8 μm. This device can be implemented in a wide variety of semiconductor lasers emitting in spectral regions ranging from the visible to the far infrared, including quantum cascade lasers. It is potentially useful in many applications including near-field optical microscopes, optical data storage, and heat-assisted magnetic recording.
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42.82.Gw Other integrated-optical elements and systems
42.55.Px Semiconductor lasers; laser diodes

Electronic transport properties of Cs-encapsulated single-walled carbon nanotubes created by plasma ion irradiation

T. Izumida, R. Hatakeyama, Y. Neo, H. Mimura, K. Omote, and Y. Kasama

Appl. Phys. Lett. 89, 093121 (2006); http://dx.doi.org/10.1063/1.2339862 (3 pages) | Cited 11 times

Online Publication Date: 31 August 2006

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The electronic transport properties of Cs-encapsulated single-walled carbon nanotubes (Cs@SWNTs), which are created by a plasma ion irradiation method, are experimentally investigated at both room and low temperatures by fabricating field-effect transistor devices with these modified SWNTs. It is found that Cs@SWNTs exhibit air stable n-type transport characteristics at room temperature, where Cs atoms function as an electron donor. Moreover, Coulomb oscillations are observed under a low temperature, which is derived from the electronic structure modulated mainly by the encapsulated Cs atoms.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Field-electron emission at 300 K in self-assembled arrays of silicon nanowires

Alla I. Klimovskaya, Yurii M. Litvin, Yuliya Yu. Moklyak, Alex A. Dadykin, Ted I. Kamins, and Shashank Sharma

Appl. Phys. Lett. 89, 093122 (2006); http://dx.doi.org/10.1063/1.2337279 (3 pages)

Online Publication Date: 1 September 2006

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Dense ensembles of silicon nanowires were prepared by metal-catalyzed chemical vapor deposition on silicon substrates. Some of these ensembles were doped with phosphorus during growth. The nanowires were characterized using scanning electron microscopy, x-ray diffraction, and mass spectroscopy. Field emission of electrons from these structures was studied at room temperature in ultrahigh vacuum. The measurements were carried out using a parallel-plate diode cell. At high applied fields, the current-voltage characteristics deviate from the Fowler-Nordheim law and exhibit a stepwise increase of the current with increasing voltage at 300 K.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.16.Dn Self-assembly
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Scanning transmission x-ray microscopy of isolated multiwall carbon nanotubes

A. Felten, H. Hody, C. Bittencourt, J.-J. Pireaux, D. Hernández Cruz, and A. P. Hitchcock

Appl. Phys. Lett. 89, 093123 (2006); http://dx.doi.org/10.1063/1.2345258 (3 pages) | Cited 15 times

Online Publication Date: 1 September 2006

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Scanning transmission x-ray microscopy (STXM) has been used to study isolated carbon nanotubes for the first time. STXM and transmission electron microscopy were applied to the same type of nanotubes, providing unique information about their composition, and electronic and structural properties. The carbon 1s near-edge x-ray absorption fine structure spectra show significant differences between multiwall carbon nanotube and carbon nanoparticle contaminants. Pristine and acid treated multiwall carbon nanotubes were also compared, highlighting the potential of the technique to differentiate surface functional groups at the nanoscale.
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78.70.Dm X-ray absorption spectra
61.46.Fg Nanotubes
73.22.-f Electronic structure of nanoscale materials and related systems

Time resolved observation of fracture events in mica crystal using scanning tunneling microscope

A. Marchenko, D. Fichou, D. Bonamy, and E. Bouchaud

Appl. Phys. Lett. 89, 093124 (2006); http://dx.doi.org/10.1063/1.2335823 (3 pages) | Cited 5 times

Online Publication Date: 1 September 2006

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Scanning tunneling microscope (STM) is used for time resolved nanoscale observation of fracture events in a mica single crystal cleaved in accordance with Obreimoff’s [Proc. R. Soc. London Ser. A 127, 290 (1930)] experiment scheme. The changes in separation between the two parts of the mica crystal caused by crack propagation are seen as variations of the Z coordinate of the STM tip. A simplified geometric model allows to relate this variation to the instantaneous crack speed. Comparative nanoscale observations performed in air and in a chemically inert liquid (n-tetradecane) reveal qualitatively different crack evolutions. The role of the surrounding environment is discussed.
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91.60.Ba Elasticity, fracture, and flow

Negative electrodes for lithium ion batteries: Tin/silica nanocomposites obtained from chemical reduction of SnI4 grafted Si-MCM-41

Jesús Santos-Peña, Luis Sánchez, Manuel Cruz-Yusta, Stéphane Bach, Patrick Soudan, Juan-José Cuart-Pascual, and Gemma Turnes-Palomino

Appl. Phys. Lett. 89, 093125 (2006); http://dx.doi.org/10.1063/1.2338003 (3 pages)

Online Publication Date: 1 September 2006

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In this letter, the authors are reporting a time saving and cost-effective procedure to obtain tin-MCM-41 nanocomposites. This particular method simultaneously extracted the surfactant from MCM-41 and grafted the tin precursor creating Si–O–Sn–I bonds in the pore surface. The obtained solid reacted with KBH4, yielding tin containing nanospheres (average diameter of 75 nm) embedded in a silica matrix. This nanocomposite electrochemically reacted with lithium forming Li–Sn alloys at 0.6 V versus Li. The silica matrix hindered the formation of large Li–Sn aggregates during the reaction. Capacities up to 340 mA h g−1 could be provided by the tin/silica nanocomposite at least for 10 cycles.
Show PACS
82.45.Fk Electrodes
82.47.Aa Lithium-ion batteries
82.45.Yz Nanostructured materials in electrochemistry
61.50.Lt Crystal binding; cohesive energy
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