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15 Dec 1966

Volume 9, Issue 12, pp. 417-446


WHITE‐LIGHT VIEWING OF SURFACE HOLOGRAMS BY SIMPLE DISPERSION COMPENSATION

D. J. De Bitetto

Appl. Phys. Lett. 9, 417 (1966); http://dx.doi.org/10.1063/1.1754635 (2 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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Two successful methods are reported for achromatizing the white‐light reconstruction of a 2‐beam surface hologram. One method uses prisms for dispersion compensation. The other uses a single‐plane diffraction grating as the correcting element.

A FLUID MIXING LASER

Terrill A. Cool

Appl. Phys. Lett. 9, 418 (1966); http://dx.doi.org/10.1063/1.1754636 (3 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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Helium‐neon CW laser oscillations at 1.1523 μ have been observed in a high‐velocity gas flow system utilizing the rapid mixing of metastable helium atoms with initially unexcited neon.

HIGH POWER AND EFFICIENCY IN CdS ELECTRON BEAM PUMPED LASERS

C. E. Hurwitz

Appl. Phys. Lett. 9, 420 (1966); http://dx.doi.org/10.1063/1.1754637 (4 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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Electron beam excitation of CdS crystals grown in an atmosphere of excess Cd has resulted in laser emission near 4900 Å with 350 W of peak output power and 26.5% overall (35% internal) power efficiency at temperatures as high as 110°K. Laser action was observed, although at considerably reduced levels of power and efficiency, at temperatures up to 250°K. The high performance of the lasers appears to be due to increased crystal uniformity and to the introduction or enhancement of highly efficient radiative transitions, both of which result from the Cd‐rich growth conditions.

TRANSITION FROM A MOVING STRIATION TO A HELICAL OSCILLATION IN A POSITIVE COLUMN

Masumi Sato and Yoshisuke Hatta

Appl. Phys. Lett. 9, 423 (1966); http://dx.doi.org/10.1063/1.1754638 (2 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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A transition from a moving striation to a helical oscillation was observed in the positive column of a helium discharge at a pressure of 0.4 mm Hg as an applied longitudinal magnetic field was increased. The frequency and amplitude of the moving striation decreased with increasing magnetic field. When the magnetic field reached a critical value of about 1650 G, a helical oscillation appeared and the two waves were observed to coexist. The striation disappeared with a further increase of the field, but the helical oscillation continued to exist.

VISUALIZATION OF THE CROSS SECTION OF A SOUND BEAM BY BRAGG DIFFRACTION OF LIGHT

A. Korpel

Appl. Phys. Lett. 9, 425 (1966); http://dx.doi.org/10.1063/1.1754639 (3 pages) | Cited 26 times

Online Publication Date: 30 November 2004

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This Letter reports on a novel way of imaging, in amplitude and phase, the cross section of a sound beam. Because of the phase retention, any arbitrary cross section can be brought into focus by optical manipulation without changing the relative position of light beam and sound beam. The process is explained in terms of ray optics and various pertinent features are illustrated. Following a discussion about resolution, the experimental setup is described. Results show photographs of a 22‐MHz sound field behind various objects placed in the sound beam. In conclusion, the application to sound microscopy at higher sound frequencies is pointed out.

DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTe

J. F. Butler, A. R. Calawa, and T. C. Harman

Appl. Phys. Lett. 9, 427 (1966); http://dx.doi.org/10.1063/1.1754640 (3 pages) | Cited 23 times

Online Publication Date: 30 November 2004

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Infrared laser emission at a number of wavelengths between 9.4 μ and 13.7 μ has been obtained from diodes of Pb1−ySnySe and Pb1−xSnxTe at 12°K and 77°K. Diodes were fabricated from vapor‐grown Pb1−ySnySe and both vapor‐grown and Bridgman‐grown Pb1−xSnxTe. Emission data indicate that, as in Pb1−xSnxTe, the energy gap in Pb1−ySnySe decreases with increasing Sn concentration, becoming zero at 12°K for some value of y within the range 0.11 ≤ y ≤ 0.14.

INTERACTION OF FERROMAGNETIC AND SUPERCONDUCTING THIN FILMS

J. L. Artley, G. Buckley, C. A. Willis, and W. F. Chambers

Appl. Phys. Lett. 9, 429 (1966); http://dx.doi.org/10.1063/1.1754641 (4 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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Experimental evidence is presented to show that the domain walls in a thin film of permalloy may be used to influence the transition of a thin indium film as it goes from the superconducting to normal state. The magnetic field of the domain walls in the permalloy film drives the superconducting indium toward a normal state and the superconducting indium film tends to lock the domain walls of the permalloy into a permanent position.

MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIONS BY INFRARED PLASMA REFLECTION

E. E. Gardner, W. Kappallo, and C. R. Gordon

Appl. Phys. Lett. 9, 432 (1966); http://dx.doi.org/10.1063/1.1754642 (3 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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When infrared radiation is reflected from the surface of a degenerate semiconductor, a minimum is obtained in the reflection spectrum. This plasma minimum is related to the free carrier concentration, effective mass, and dielectric constant of the semiconductor. In a diffused semiconductor with high surface concentration, the absorption constant is high and consequently the reflected plasma minimum is directly related to the surface concentration of free carriers. By calibrating the plasma minima vs known impurity concentrations, it is possible to determine surface concentration in n‐ and p‐type silicon ranging from 5 × 1018 to 5 × 1020 cm−3 using an infrared spectrometer with a wavelength span of 2.5 to 25 μ.

NOISE SUPPRESSION IN A DOUBLE‐INJECTION SILICON DIODE

M‐A. Nicolet, H. R. Bilger, and E. R. McCarter

Appl. Phys. Lett. 9, 434 (1966); http://dx.doi.org/10.1063/1.1754643 (3 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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We measured the noise spectrum between 10 kHz and 10 MHz. In the region where I ∝ V2, we found a noise suppression factor of 1∕2 for the white noise, i.e., I2 = (1∕2)4kT(∂V∕∂I)−1Δf.

ACOUSTIC QUARTER‐WAVE PLATES AT MICROWAVE FREQUENCIES

B. A. Auld, C. F. Quate, H. J. Shaw, and D. K. Winslow

Appl. Phys. Lett. 9, 436 (1966); http://dx.doi.org/10.1063/1.1754644 (3 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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The use of birefringent acoustic media in microwave—shear‐wave polarization transformers is described. Restrictions on the properties of the acoustic medium are discussed as well as the limitations imposed by the use of imperfect bonds between the transformer section and a delay medium. The principles are illustrated by application to a double‐ended variable delay line.

HIGH EFFICIENCY POLARIZATION REVERSAL OF MAGNETOELASTIC WAVES IN YIG BY OPTICAL‐CONTACT BONDING OF YAG DISKS

H. van de Vaart and Henry I. Smith

Appl. Phys. Lett. 9, 439 (1966); http://dx.doi.org/10.1063/1.1754645 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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By optical‐contact bonding of YAG disks to the end surfaces of a YIG rod, magnetoelastic pulses, generated at one end, are detected at the opposite end because of polarization reversal of the circularly polarized shear waves to the magnetically inactive, counter‐rotating shear waves. The frequencies at which the sense of circular polarization is reversed are determined by the velocities of the shear waves in the (110) cut YAG and by the thickness of the disks. The efficiency of the YAG‐YIG‐YAG assembly for obtaining echoes in transmission depends strongly on the quality of the YAG‐to‐YIG bonds. It was found that the optical‐contact bonds transmitted 96% of the incident elastic power at L band at room temperature.

ELECTROLUMINESCENCE USING GaAs MIS STRUCTURES

C. N. Berglund

Appl. Phys. Lett. 9, 441 (1966); http://dx.doi.org/10.1063/1.1754646 (4 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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Minority carrier ``injection'' using metal‐insulator‐semiconductor (MIS) structures driven by ac excitation has been achieved for both n‐ and p‐type GaAs, and the resulting luminescence has been measured. The technique provides a new method for obtaining electroluminescence in semiconductors where pn junctions are either difficult or impossible to fabricate.

TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORS

A. Goetzberger and E. H. Nicollian

Appl. Phys. Lett. 9, 444 (1966); http://dx.doi.org/10.1063/1.1754647 (3 pages) | Cited 22 times

Online Publication Date: 30 November 2004

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Rapid generation of minority carriers under transient bias conditions is shown to occur by means of avalanche breakdown in an MIS capacitor. Capacitance vs pulse bias follows a 1∕C2 law and saturates at a low value at the avalanche voltage. Breakdown fields and voltages in general agreement with those found in step p‐n junctions for Si and GaAs are measured.
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Erratum: On the Role of Sodium and Hydrogen in the Si☒SiO2 System

E. Kooi and M. V. Whelan

Appl. Phys. Lett. 9, 446 (1966); http://dx.doi.org/10.1063/1.1754648 (1 page)

Online Publication Date: 30 November 2004

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