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1 Dec 1966

Volume 9, Issue 11, pp. 389-415


ELECTRIC‐FIELD‐INDUCED INFRARED ABSORPTION IN GaAs p‐n JUNCTIONS

J. C. Burgiel

Appl. Phys. Lett. 9, 389 (1966); http://dx.doi.org/10.1063/1.1754623 (2 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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Experimental results are presented concerning a new form of electric‐field‐induced absorption of infrared light passing through the junction waveguide of a diffused GaAs diode. Changes in absorption constant of nearly 40 cm−1 have been observed at a wavelength of 0.94 μ upon the application of 20 V reverse bias. An explanation involving two physical mechanisms is proposed. The first is a Franz‐Keldysh—like effect associated with shallow impurity levels. The second seems to be associated with a deeper impurity level.

DIRECT EVIDENCE OF PERSISTENT CURRENT LOOPS IN HARD SUPERCONDUCTING WIRE

Y. Iwasa and J. E. C. Williams

Appl. Phys. Lett. 9, 391 (1966); http://dx.doi.org/10.1063/1.1754624 (2 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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Measurements of the field near the surface of a Nb‐25% Zr superconducting wire magnetized by a static transverse field have revealed spatially‐periodic variations in local field strength indicative of persistent current loops (``macrovortices'') about six wire diameters in size.

COMPUTER‐SIMULATED ION‐EMISSION IMAGES OF DISLOCATIONS: SCREW DISLOCATION AT THE CENTER OF {420}

R. C. Sanwald, S. Ranganathan, and J. J. Hren

Appl. Phys. Lett. 9, 393 (1966); http://dx.doi.org/10.1063/1.1754625 (2 pages) | Cited 16 times

Online Publication Date: 30 November 2004

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It has been proposed by Ranganathan that spirals should appear in a field‐ion image when a dislocation intersects the surface. These conditions were simulated with a computer for a fcc lattice using Moore's ``shell model.'' Ranganathan's hypothesis is shown to be exact for the case of a pure screw dislocation intersecting the center of a plane.

HELICON—DRIFT CURRENT INTERACTION IN A LAYERED SEMICONDUCTOR STRUCTURE

C. A. Nanney, A. Libchaber, and J. P. Garno

Appl. Phys. Lett. 9, 395 (1966); http://dx.doi.org/10.1063/1.1754626 (3 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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We have observed an interaction between helicon waves and drift currents in a layered lead telluride structure. In the low ωcτ regime of our experiments bulk wave effects are much greater than the surface wave interaction proposed by Baraff and Buchsbaum. Experiments performed on structures which have layers of equal dielectric constants and those with unequal dielectric constants both yield the same result; namely, the attenuation is reduced when the drift and wave propagate in the same direction and is increased when the two are in opposite directions. The observed interaction is strong and although spatial growth of the helicon waves has not yet been achieved with presently available drift velocities (Vdrift < Vphase), wave attenuation has been reduced by as much as 15 dB.

FREQUENCY SPECTRUM OF GIANT ACOUSTIC WAVE PACKETS GENERATED IN CdS BY HIGH ELECTRIC FIELDS

J. Zucker and S. Zemon

Appl. Phys. Lett. 9, 398 (1966); http://dx.doi.org/10.1063/1.1754627 (3 pages) | Cited 51 times

Online Publication Date: 30 November 2004

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Using light scattering and the photoelastic effect, we have investigated the frequency spectrum of giant acoustic shear wave packets generated in semiconducting CdS by high electric fields. The frequencies were in the range 100 to 1500 MHz, at least an order of magnitude lower than the predicted frequency for maximum net gain. The strains were high enough to cause permanent crystal damage.

ELASTIC WAVE AND INFRARED LIGHT INTERACTIONS WITH A MOVING HIGH‐FIELD DOMAIN IN A PIEZOELECTRIC SEMICONDUCTOR

C. S. Tsai

Appl. Phys. Lett. 9, 400 (1966); http://dx.doi.org/10.1063/1.1754628 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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A double‐Doppler‐effect experiment for elastic waves or infrared light, using the moving high‐field domain in a piezoelectric semiconductor as the moving boundary, is proposed. A possible experimental configuration for the elastic wave case is described and the parameters relevant to the experiment are evaluated for three potential piezoelectric semiconductors. The most important parameter is the change of acoustic impedance across the boundaries of the high‐field domain. The possibility of employing the proposed experiments as the means for probing the elastic and optical properties of the high‐field domain is also discussed.

FACE‐CENTERED‐CUBIC TUNGSTEN FILMS OBTAINED BY

K. L. Chopra, M. R. Randlett, and R. H. Duff

Appl. Phys. Lett. 9, 402 (1966); http://dx.doi.org/10.1063/1.1754629 (4 pages) | Cited 18 times

Online Publication Date: 30 November 2004

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Thick, stable tungsten films with fcc structure have been obtained by ion beam sputtering in vacuum onto substrates of glass, rock salt, and mica at a temperature of ∼250–400°C. The lattice constant is 4.15 Å. The fcc phase transforms slowly to bcc at annealing temperatures of ∼700°C.

HOLOGRAPHIC IMAGE SYNTHESIS UTILIZING THEORETICAL METHODS

James P. Waters

Appl. Phys. Lett. 9, 405 (1966); http://dx.doi.org/10.1063/1.1754630 (3 pages) | Cited 40 times

Online Publication Date: 30 November 2004

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A theoretically calculated, automatically plotted, and photoreduced hologram has been successfully used to ``reconstruct'' the image of a nonexistent, three‐dimensional, equilateral tetrahedron. The theory, as presented therein, provides a synthetic hologram which consists only of completely opaque and transparent portions; allows reconstruction of the entire image with any fraction of the hologram as in conventional experimental types; can be made to reconstruct objects for either on‐ or off‐axis viewing; provides both a real and virtual image; and produces a positive image with both positive and negative prints.

UNUSUAL CRYSTAL‐FIELD ENERGY LEVELS AND EFFICIENT LASER PROPERTIES OF YVO4:Nd

J. R. O'Connor

Appl. Phys. Lett. 9, 407 (1966); http://dx.doi.org/10.1063/1.1754631 (3 pages) | Cited 101 times

Online Publication Date: 30 November 2004

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The spectral properties of Nd‐doped YVO4, grown from the melt, have been determined. In absorption the Stark split levels are reduced in comparison to other Nd‐doped materials. The Nd ion appears to be in a cubic crystal field even though it substitutes for Y whose point symmetry is less than (4mathm). The reduced Stark splitting, caused by an admixture of 4f and 5d wave functions, leads to efficient, low‐threshold laser action. Transfer of energy from the lattice to Nd ions is also observed.

RELATIVE INTENSITIES OF THE 5s2P3∕2 → 4p2D5∕2 AND THE 5s4P5∕2 → 4p4D7∕2 TRANSITIONS IN THE Ar II LASER

H. Marantz, R. I. Rudko, and C. L. Tang

Appl. Phys. Lett. 9, 409 (1966); http://dx.doi.org/10.1063/1.1754632 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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It has been found that the ratio of the spontaneous intensities of the 5s2P3∕2 → 4p2D5∕2 and the 5s4P5∕2 → 4p4D7∕2 cascade transitions in the CW Ar II laser is typically 1:11.

VARIATION OF DRIFT VELOCITY WITH FIELD IN GaAs

E. M. Conwell and M. O. Vassell

Appl. Phys. Lett. 9, 411 (1966); http://dx.doi.org/10.1063/1.1754633 (3 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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Solutions of the Boltzmann equation for GaAs have been used to calculate the variation of drift velocity, vd, with field, E. To represent the situation in moderately doped samples with low mobility an additional scattering process has been incorporated into the calculations. The results are in reasonable agreement with deductions about the vd vs E characteristic made from many types of experiments, but in disagreement with the measured vd vs E of Gunn and Elliott.

A NEW MODE IN AXIALLY MAGNETIZED YIG RODS

M. F. Lewis and D. E. Lacklison

Appl. Phys. Lett. 9, 414 (1966); http://dx.doi.org/10.1063/1.1754634 (2 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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A new microwave delay mode in an axially magnetized YIG rod has been observed and is tentatively interpreted to be a spin wave generated at the turning point and reflected at the crossover point.
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