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15 Sep 1966

Volume 9, Issue 6, pp. 219-253


GROWTH OF DISLOCATION‐FREE SILICON WEB CRYSTALS

T. N. Tucker and G. H. Schwuttke

Appl. Phys. Lett. 9, 219 (1966); http://dx.doi.org/10.1063/1.1754720 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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Dislocation‐free silicon web crystals have been grown reproducibly in the thickness range of 15 to 45 μ and approximately 4 to 8 mm wide. Phosphorus, arsenic, and boron were used as dopants to achieve controlled resistivities from 0.05 to 20 Ω‐cm.

EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K

H. Rupprecht, J. M. Woodall, K. Konnerth, and D. G. Pettit

Appl. Phys. Lett. 9, 221 (1966); http://dx.doi.org/10.1063/1.1754721 (3 pages) | Cited 35 times

Online Publication Date: 30 November 2004

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The light‐emitting diodes described in this Letter differ from standard type diodes insofar as the amphoteric dopant Si is the dominant impurity on both sides of the junction. The p‐n junction is completely solution regrown. The highly compensated p region gives rise to a wide active region up to 50 μ in width. The interesting feature of these diodes is their high external quantum efficiencies at 300°K. Values up to 6% have been measured on diodes, when an antireflecting coat has been applied.

PHOTON‐MODULATED TUNNELING

Julius Cohen

Appl. Phys. Lett. 9, 223 (1966); http://dx.doi.org/10.1063/1.1754722 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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Infrared photoconductivity is obtained in a thin‐film structure, Al☒Al2O3☒Te☒Au, and the evidence suggests that it is due to photon‐modulated tunneling.

ENERGY OF THE PERIODIC BLOCH WALL

James F. Janak

Appl. Phys. Lett. 9, 225 (1966); http://dx.doi.org/10.1063/1.1754723 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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A crude calculation of the energy of a Bloch wall subdivided into two segments of opposite polarity is given. It is shown that the energy of this structure is lower than that of the ordinary Bloch wall only if the anisotropy constant K is sufficiently small. Thus one expects to observe subdivided Bloch walls only in low‐anisotropy ferromagnetic materials.

A NEW IONIZING RADIATION DETECTION CONCEPT WHICH EMPLOYS SEMICONDUCTOR AVALANCHE AMPLIFICATION AND THE TUNNEL DIODE ELEMENT

Robert J. Locker and Gerald C. Huth

Appl. Phys. Lett. 9, 227 (1966); http://dx.doi.org/10.1063/1.1754724 (4 pages) | Cited 14 times

Online Publication Date: 30 November 2004

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A concept for the detection of ionizing radiation which utilizes the inherent high speed and large amplitude of the induced charge pulse in a semiconductor avalanche detector coupled with the tunnel diode element is described. It has been shown possible to digitally detect extremely low energy events even in high‐current‐induced noise backgrounds in the avalanche detector. Cryogenic cooling is not required. Detection is accomplished by use of the rate of rise and magnitude of the nuclear pulse (or alternatively a pulse of suitable amplitude and rate of rise generated by optical photons). The high‐speed time domain allows discrimination against all noise‐generated events because charge is not integrated in this scheme.

LASER ACTION IN OPTICALLY‐PUMPED CN

M. A. Pollack

Appl. Phys. Lett. 9, 230 (1966); http://dx.doi.org/10.1063/1.1754725 (3 pages) | Cited 8 times

Online Publication Date: 30 November 2004

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Laser oscillation near 5.2 μ has been observed during the flash photolysis of cyanogen (C2N2). A total peak power of more than 10 mW was obtained on three lines, identified as vibrational‐rotational transitions in the ground electronic state of CN. The optimum pressure was found to be about 20 torr of cyanogen. Optical pumping is the only mechanism now known to produce laser action on these transitions.

COHERENT MICROWAVE EMISSION FROM INDIUM‐ANTIMONIDE STRUCTURES

G. A. Swartz and B. B. Robinson

Appl. Phys. Lett. 9, 232 (1966); http://dx.doi.org/10.1063/1.1754726 (4 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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Coherent microwave power at K‐band frequencies has been generated by bars of p‐type indium antimonide with recrystallized surfaces and bars of indium antimonide with layered p and n regions. At an ambient temperature of 77°K, electric and magnetic fields are applied to the rod at an angle θ, to each other. A theory which considers the two‐stream interaction in a transverse magnetic field is presented. The output frequency predicted by the theory is in the range of experimental observation.

STUDY OF THE EARLY STAGES OF THE EPITAXY OF SILICON ON SILICON

F. Jona

Appl. Phys. Lett. 9, 235 (1966); http://dx.doi.org/10.1063/1.1754727 (3 pages) | Cited 23 times

Online Publication Date: 30 November 2004

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Observations of low‐energy electron diffraction patterns reveal that the epitaxial temperature for Si films is approximately 400°C on clean Si {111} surfaces and tends to be lower, although less well defined, on clean Si{100} surfaces. A few monolayers deposited at room temperature on{111} are amorphous, on{100} they exhibit the bulk structure. The recrystallization process of an amorphous surface layer occurs by way of an ``intermediate'' phase, characterized by periodic modulations of lattice spacing and scattering factor, and an ``ideal'' phase that corresponds to simple termination of the bulk lattice. The transition from the latter to the reconstructed surface structure occurs by way of antiphase domains.

ELECTRIC BREAKDOWN MECHANISM IN CUPROUS CHLORIDE SINGLE CRYSTALS

A. L. Gentile

Appl. Phys. Lett. 9, 237 (1966); http://dx.doi.org/10.1063/1.1754728 (3 pages)

Online Publication Date: 30 November 2004

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Electrical breakdown in cuprous chloride single crystals was observed to be caused by copper precipitated as either filaments with dendritic branches or as networks. A method was found to out‐diffuse the copper and thereby increase the resistivity of the material.

SELF‐DIFFUSION IN LIQUID METALS

R. J. Reynik

Appl. Phys. Lett. 9, 239 (1966); http://dx.doi.org/10.1063/1.1754729 (2 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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The small fluctuation theory of self‐diffusion in liquid metals proposed by Swalin has been modified to allow a thermally activated diffusion process and local density fluctuations. The resulting diffusion equation predicts a linear variation of diffusivity with temperature. This is confirmed by existing data in liquid In, Sn, Cu, Na, Zn, Ga, K, Hg and Ag.

NEW VISIBLE CW LASER LINES IN SINGLY‐IONIZED CHLORINE

C. B. Zarowin

Appl. Phys. Lett. 9, 241 (1966); http://dx.doi.org/10.1063/1.1754730 (2 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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Three new visible CW laser lines are reported and identified in Cl II. These lines are at the following wavelengths: 4132.5 Å, 4740.4 Å, 5103.1 Å.

TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS

C. R. Crowell and S. M. Sze

Appl. Phys. Lett. 9, 242 (1966); http://dx.doi.org/10.1063/1.1754731 (3 pages) | Cited 91 times

Online Publication Date: 30 November 2004

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Expressions for the temperature dependence of the carrier mean free path for optical phonon scattering and the mean energy loss per collision are presented which predict avalanche multiplication as a function of electric field for any operating temperature once the appropriate parameters have been determined at a single temperature. This has been verified for electrons in Si by the correlation of measurements at 300°K, 213°K, and 100°K. The temperature dependence of the breakdown voltages of a variety of abrupt and linear‐graded Si and Ge p‐n junctions has also been predicted. The fractional change in breakdown voltage with increasing temperature is predicted to decrease with increased doping concentration and, for the same breakdown voltage, to be less for linear‐graded junctions than for abrupt junctions.

HIGH‐TEMPERATURE X‐RAY TOPOGRAPHY OF Si WAFERS STRAINED BY THIN SURFACE FILMS

Ilan A. Blech and Eugene S. Meieran

Appl. Phys. Lett. 9, 245 (1966); http://dx.doi.org/10.1063/1.1754732 (2 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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See Also: Erratum

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Room‐temperature and elevated‐temperature transmission x‐ray topographs of Si wafers coated with different types of films were taken to show the change in the stress in the films as a function of temperature. Anodic oxide films grown at 100°C show a reversal of the sense of stress at 200°C, while steam oxide, grown at 1200°C, show almost no change in topographs taken up to 800°C. In the case of metal films, the stress in Pt films vanishes at 230°C and remains absent at least up to 615°C, while little change is seen in W films, even in topographs taken at 800°C.

THE HALL EFFECT IN SINGLE CRYSTALS OF TITANIUM

Georgiana W. Scovil

Appl. Phys. Lett. 9, 247 (1966); http://dx.doi.org/10.1063/1.1754733 (2 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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The Hall coefficient in single crystals of titanium has been measured at room temperature as a function of their crystallographic orientation in a magnetic field. Six rectangular plates were cut from crystals of 99.97% or higher purity. The direction of the c axis was determined by x‐ray techniques, and the coefficient was measured using both a 3‐probe and a 2‐probe dc method. The principal components of the Hall tensor were determined to be R∥ = +7.1 × 10−11 and R⊥ = −10.8 × 10−11 m3∕C. The components R∥ and R⊥ are the Hall coefficients when the c axis of the hexagonal crystal is parallel and perpendicular respectively to the applied magnetic field.

MAGNETIC STUDIES OF THE SEMICONDUCTOR TO METAL TRANSITIONS IN Ti3O5 AND Ti2O3

L. K. Keys and L. N. Mulay

Appl. Phys. Lett. 9, 248 (1966); http://dx.doi.org/10.1063/1.1754734 (3 pages) | Cited 14 times

Online Publication Date: 30 November 2004

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Magnetic susceptibility studies show a semiconductor to metal transition in Ti3O5 and Ti2O3. The transition in Ti2O3 is a noncooperative transition as previously observed. An apparent second noncooperative effect is observed at 800°K. The transition in Ti3O5 occurs at around 460°K. It is a distinct cooperative transition and is associated with a phase change. The metallic conduction is believed to occur along the b direction. Some aspects of the theories of Goodenough and Mott are applied to the transitions.

TRAVELING‐WAVE AMPLIFICATION BY DRIFTING CARRIERS IN SEMICONDUCTORS

Masao Sumi

Appl. Phys. Lett. 9, 251 (1966); http://dx.doi.org/10.1063/1.1754735 (3 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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A novel method for traveling‐wave amplification by the interaction of drifting carriers in semiconductors with an external slow‐wave circuit is described. The coupling between a plate semiconductor and a plane circuit with periodic structure is analyzed and the resulting dispersion relation is solved. The propagating wave is amplified when the drift velocity of carriers exceeds the phase velocity of the wave. The wave characteristics are quite similar to those for ultrasonic amplification. For n‐InSb at 77°K, the predicted gain for 4 Gc∕sec is over 100 dB∕mm.
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Erratum: Pulsed Laser Transitions in Manganese Vapor

M. Piltch, W. T. Walter, N. Solimene, G. Gould, and W. R. Bennett

Appl. Phys. Lett. 9, 253 (1966); http://dx.doi.org/10.1063/1.1754736 (1 page)

Online Publication Date: 30 November 2004

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Abstract Unavailable
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Erratum: Infrared Dielectric Dispersion of LiNbO3

J. D. Axe and D. F. O'Kane

Appl. Phys. Lett. 9, 253 (1966); http://dx.doi.org/10.1063/1.1754737 (1 page) | Cited 2 times

Online Publication Date: 30 November 2004

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