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15 Oct 1966

Volume 9, Issue 8, pp. 277-319


INTERNAL Q SWITCHING OF Ho3+‐STIMULATED EMISSION IN IRON‐CONTAINING GLASSES

H. W. Gandy, R. J. Ginther, and J. F. Weller

Appl. Phys. Lett. 9, 277 (1966); http://dx.doi.org/10.1063/1.1754748 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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Abstract Unavailable

EFFECT OF MAGNETIZATION ON THE L20 ORDERING REACTION IN IRON‐ALUMINUM ALLOYS

P. R. Swann and R. M. Fisher

Appl. Phys. Lett. 9, 279 (1966); http://dx.doi.org/10.1063/1.1754749 (3 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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It is found that the spontaneous magnetization of disordered iron‐aluminum alloys changes the mode of the L20 order‐disorder reaction from a second to a first degree transition. A new two‐phase field (αm + α2n) has been found in the composition range 22.3 at. % Al to 25 at. % Al and this is responsible for many of the magnetic anomalies of these alloys. The microstructure of alloys heat‐treated in the (αm + α2n)‐phase region can be controlled by an externally applied magnetic field which can also be used to determine quantitatively the ``antiphase'' boundary energy of the L20 structure.

SELF‐LOCKING OF MODES IN THE ARGON ION LASER

O. L. Gaddy and E. M. Schaefer

Appl. Phys. Lett. 9, 281 (1966); http://dx.doi.org/10.1063/1.1754750 (2 pages) | Cited 13 times

Online Publication Date: 30 November 2004

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Direct observation of indications of self‐mode‐locking in the argon ion laser is reported. With losses introduced into the optical resonator, subnanosecond pulsation of the laser output is observed with a wide‐band photomultiplier.

DIRECT OBSERVATION OF THE DRIFT VELOCITY AS A FUNCTION OF THE ELECTRIC FIELD IN GALLIUM ARSENIDE

D. M. Chang and J. L. Moll

Appl. Phys. Lett. 9, 283 (1966); http://dx.doi.org/10.1063/1.1754751 (3 pages) | Cited 12 times

Online Publication Date: 30 November 2004

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The drift velocity as a function of the electric field in gallium arsenide was measured directly by studying the response of a reverse‐biased Schottky‐barrier i‐n+ GaAs photodetector to a step input of light. The photoresponse was dominated by trapping of electrons in the i region. Analysis based on a simple model yielded the drift velocity—electric field characteristic in GaAs up to fields of 9000 V∕cm. A region of negative differential mobility was observed to exist between a peak field of 2200 V∕cm and an apparent valley field of 8000 V∕cm.

MAGNETIC Q SPOILING OF COOLED RUBY

R. C. Eckardt, J. N. Bradford, and J. W. Tucker

Appl. Phys. Lett. 9, 285 (1966); http://dx.doi.org/10.1063/1.1754752 (3 pages)

Online Publication Date: 30 November 2004

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A technique involving the use of a magnetic field in ``Q''‐spoiling a ruby laser cooled to 77°K is discussed. The laser rod is pumped in an intense, inhomogeneous magnetic field where gain is reduced by spatially inhomogeneous Zeeman splitting of the 4A2 ground multiplet. The rapid removal of this magnetic field produced a 500‐nsec period of enhanced amplitude spiking.

OPTICAL FREQUENCY TRANSLATION OF MODE‐LOCKED LASER PULSES

M. A. Duguay, L. E. Hargrove, and K. B. Jefferts

Appl. Phys. Lett. 9, 287 (1966); http://dx.doi.org/10.1063/1.1754753 (4 pages) | Cited 15 times

Online Publication Date: 30 November 2004

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Optical frequency translation of pulses from a mode‐locked laser is described and demonstrated experimentally. The laser beam is passed through a crystal of LiNbO3 whose refractive index is made to change sinusoidally at the mode‐locked laser round‐trip frequency (56 Mc∕sec). A Doppler shift of the laser light results. Shifts of ±2.4 Gc∕sec have been observed. The scheme may be capable of producing shifts as large as ±1000 Gc∕sec.

ULTRASONIC PROPERTIES OF BISMUTH GERMANIUM OXIDE

E. G. Spencer, P. V. Lenzo, and A. A. Ballman

Appl. Phys. Lett. 9, 290 (1966); http://dx.doi.org/10.1063/1.1754754 (2 pages) | Cited 19 times

Online Publication Date: 30 November 2004

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Temperature dependence of the elastic wave losses is reported for bismuth germanium oxide, Bi12GeO20, a strongly piezoelectric crystal of point group 23. At 296°K and at 500 Mc∕sec the attenuation, Γ, is 0.11 dB∕μsec and at 118 Mc∕sec is 0.008 dB∕μsec. At 4.2°K and at 500 Mc∕sec, Γ is 5 × 10−4 dB∕μsec and at 118 Mc∕sec is 2.7 × 10−4 dB∕sec. At intermediate temperatures five loss peaks are observed, the origins of which as yet have not been determined. A shear wave velocity and the longitudinal wave velocity in the [110] direction are 1.77 × 105 and 3.42 × 105 cm∕sec, respectively. The low elastic wave velocities and loss in Bi12GeO20, the low crystallization temperature, the piezoelectric coupling and the fact that it is cubic suggest possible advantages for device application involving storage of information at vhf and microwave frequencies.

ON THE DYNAMICS OF LASER‐INDUCED DAMAGE IN GLASSES

J. P. Budin and J. Raffy

Appl. Phys. Lett. 9, 291 (1966); http://dx.doi.org/10.1063/1.1754755 (3 pages) | Cited 17 times

Online Publication Date: 30 November 2004

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The evolution in time of laser‐induced fractures in bulk transparent materials such as glass is studied. Damage starts with a long, thin filament, collinear with the laser beam direction, almost simultaneously over its whole length. Damage then grows transversally to this direction, after the end of the incident laser pulse, and is accompanied by sparking. These observations favor damage mechanisms with short time constants, such as ionization or self‐trapping.

QUANTUM SIZE EFFECT IN THIN BISMUTH FILMS

V. P. Duggal, Raj Rup, and P. Tripathi

Appl. Phys. Lett. 9, 293 (1966); http://dx.doi.org/10.1063/1.1754756 (3 pages) | Cited 13 times

Online Publication Date: 30 November 2004

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Abstract Unavailable

NO MOLECULAR LASER

Thomas F. Deutsch

Appl. Phys. Lett. 9, 295 (1966); http://dx.doi.org/10.1063/1.1754757 (3 pages) | Cited 13 times

Online Publication Date: 30 November 2004

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Laser action on over sixty vibrational‐rotational transitions in the ground electronic state of nitric oxide is obtained by the dissociation of NOCl in a pulsed electrical discharge. The emission occurs between 5.84 and 6.43 μ. The observed frequencies are fitted using the revised vibrational constants ωe = 1904.01 cm−1 and ωeχe = 13.995 cm−1.

OPTICAL PARAMETRIC OSCILLATION IN THE VISIBLE SPECTRUM

J. A. Giordmaine and R. C. Miller

Appl. Phys. Lett. 9, 298 (1966); http://dx.doi.org/10.1063/1.1754758 (3 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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A LiNbO3 optical parametric oscillator has been temperature tuned over the wavelength range of 7300 Å to 19,300 Å. Total output powers of the order of 103 W were observed with pump powers at 5300 Å of about 105 W. Experimental data illustrate the pronounced dependence of the generated frequencies on the pump frequency and the longitudinal mode distribution of the resonator. A proposal is described for quasicontinuous tuning of the output frequencies by means of the linear electro‐optic effect in the oscillator crystal.

BULK GaAs NEGATIVE CONDUCTANCE AMPLIFIERS

A. L. McWhorter and A. G. Foyt

Appl. Phys. Lett. 9, 300 (1966); http://dx.doi.org/10.1063/1.1754759 (3 pages) | Cited 22 times

Online Publication Date: 30 November 2004

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By taking the negative mobility slope of a three‐slope piecewise‐linear model for velocity vs electric field in n‐GaAs as an adjustable parameter, good quantitative agreement has been obtained with the measured small‐signal admittance parameters of GaAs negative conductance amplifiers. The calculation yields a negative mobility of about 2500–3000 cm2∕V‐sec.

COPYING HOLOGRAMS

M. J. Landry

Appl. Phys. Lett. 9, 303 (1966); http://dx.doi.org/10.1063/1.1754760 (2 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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A method is described by which particularly good copies of holograms can be made. The reconstructed images formed by copies made when a He☒Ne laser is used as the illuminating light for the copying process are excellent in detail and are less degraded than when other conventional illuminating light source is used.

PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODES

I. Melngailis and A. R. Calawa

Appl. Phys. Lett. 9, 304 (1966); http://dx.doi.org/10.1063/1.1754761 (3 pages) | Cited 12 times

Online Publication Date: 30 November 2004

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Photovoltaic response has been observed in p‐n junctions of PbxSn1−xTe at wavelengths up to 9.5 μ at 77°K and up to 12 μ at 12°K. These results together with previous photoluminescence data and the proposed model for the band structure of PbxSn1−xTe (ref. 1) indicate that these alloys have considerable potential for efficient infrared detection throughout the 8 to 14 μ atmospheric window and well beyond.

ORGANIC DYE SOLUTION LASER

Fritz P. Schäfer, Werner Schmidt, and Jürgen Volze

Appl. Phys. Lett. 9, 306 (1966); http://dx.doi.org/10.1063/1.1754762 (4 pages) | Cited 67 times

Online Publication Date: 30 November 2004

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The operation and characteristics of liquid lasers with a purely organic medium are described. A giant‐pulse ruby laser is used to pump solutions of organic dyes in various organic solvents in concentrations ranging from 10−3 to 10−6 moles∕liter. The solutions are contained in plane‐parallel cuvettes acting as laser cavities. Wavelengths from 730 to 870 nm, megawatt peak powers and beam divergence angles of 5 mrad have been observed. The laser wavelength of each dye is tunable over a great part of its fluorescence band, e.g. by a change in concentration.

PERFORMANCE OF A VIBRATIONAL H2‐STOKES OSCILLATOR

P. V. Avizonis, A. H. Guenther, T. A. Wiggins, R. V. Wick, and D. H. Rank

Appl. Phys. Lett. 9, 309 (1966); http://dx.doi.org/10.1063/1.1754763 (3 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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A H2‐Stokes Raman oscillator was constructed operating at 9755 Å, and its performance was found to be as expected of laser oscillators. No beam instability was developed (beam trapping), confirming earlier measurements. A significant beam brightness enhancement (in terms of line width and beam divergence) over that of the Q‐switched ruby laser resulted.

CONTINUOUSLY‐VARIABLE ULTRASONIC‐OPTICAL DELAY LINE

M. J. Brienza and A. J. DeMaria

Appl. Phys. Lett. 9, 312 (1966); http://dx.doi.org/10.1063/1.1754764 (3 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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Experimental results are reported on a continuously‐variable delay line using acoustic waves to diffract and frequency‐shift a portion of an argon ion laser beam. Data was obtained from 300 to 700 MHz utilizing thin‐film CdS transducers deposited on a single‐crystal Z‐cut quartz rod placed within the laser cavity. The diffracted, frequency‐shifted beam was optically heterodyned on a PIN detector. Variable delays of the order of 10 μsec were obtained by varying the distance from the CdS transducer to the beams' intercept point. A novel folded‐acoustic path configuration is also described.

ON THE ROLE OF SODIUM AND HYDROGEN IN THE Si☒SiO2 SYSTEM

E. Kooi and M. V. Whelan

Appl. Phys. Lett. 9, 314 (1966); http://dx.doi.org/10.1063/1.1754765 (4 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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See Also: Erratum

Show Abstract
MOS‐capacitance measurements combined with neutron activation analysis show that positive charge at oxidized silicon surfaces can be increased by the presence of sodium in the oxidation system. The amount of charge depends then on the surface orientation and the oxide thickness. It can be decreased by low‐temperature heat treatment in water vapor or hydrogen. The same treatment can cause an effective reduction of the number of interface states. In both cases an explanation can be found in the formation of Si☒H bonds.

INTERPRETATION OF LOW‐VOLTAGE PHOTOMEASUREMENTS IN METAL‐INSULATOR‐METAL FILMS

Fritz L. Schuermeyer and Julian A. Crawford

Appl. Phys. Lett. 9, 317 (1966); http://dx.doi.org/10.1063/1.1754766 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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A simple method of separating the opposing photocurrent components which occur in thin‐film, metal‐insulator‐metal sandwich structures at low (or zero) applied bias voltages is presented. The method uses data obtained by illuminating the sample first from one side and then from the other, both electrodes being semitransparent, and calculating the ratio of the resulting photo‐yields over a suitable photon energy range. The analysis has been applied to evaporated Al‐Al3O3‐Al diodes in which the Al2O3 layer was formed by evaporation of sapphire. The experimental results show that the proposed analysis is adequate for its intended purpose.
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Erratum: Sensitization of Tb3+ Luminescence by Sn2+ and Cu+ in Alkaline Earth Phosphates

W. L. Wanmaker, A. Bril, J. W. ter Vrugt, and N. V. Philips'

Appl. Phys. Lett. 9, 319 (1966); http://dx.doi.org/10.1063/1.1754767 (1 page)

Online Publication Date: 30 November 2004

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Abstract Unavailable
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