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Appl. Phys. Lett. 90, 012103 (2007); http://dx.doi.org/10.1063/1.2425024 (3 pages)

Temperature dependence of terahertz emission from InMnAs

Hui Zhan1, Jason Deibel1, Jonathan Laib1, Chanjuan Sun1, Junichiro Kono1, Daniel M. Mittleman1, and Hiro Munekata2

1Department of Electrical and Computer Engineering, MS-366, Rice University, 6100 Main St., Houston, Texas 77005
2Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama 226-8502, Japan

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(Received 6 September 2006; accepted 29 November 2006; published online 2 January 2007)

We have studied the terahertz radiation emitted by the dilute magnetic semiconductor InMnAs under femtosecond laser illumination, as a function of temperature. We observe a reversal of the polarity of the emitted terahertz field as the temperature is decreased, in both p-type and n-type materials. This effect is not observed in p-InAs. A competition between two oppositely directed currents, the photo-Dember current and the surface-field-induced current, can explain the observed polarity reversal. In contrast to nonmagnetic materials, these two currents are of comparable magnitude because the Mn impurity substantially reduces the carrier mobility in dilute magnetic semiconductors.

© 2007 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 75.50.Pp

    Magnetic semiconductors

  • 78.70.Gq

    Microwave and radio-frequency interactions

  • 72.80.Ey

    III-V and II-VI semiconductors

  • 78.47.-p

    Spectroscopy of solid state dynamics

  • 72.40.+w

    Photoconduction and photovoltaic effects

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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