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5 Mar 2007

Volume 90, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 90, 101901 (2007); http://dx.doi.org/10.1063/1.2712772 (3 pages)

S. N. Yi, Jong H. Na, Kwan H. Lee, Anas F. Jarjour, Robert A. Taylor, Y. S. Park, T. W. Kang, S. Kim, D. H. Ha, G. Andrew, and D. Briggs
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Enhancement of ferroelectric properties of Na1/2Bi1/2TiO3-BaTiO3 single crystals by Ce dopings

J. Bubesh Babu, Ming He, D. F. Zhang, X. L. Chen, and R. Dhanasekaran

Appl. Phys. Lett. 90, 102901 (2007); http://dx.doi.org/10.1063/1.2709917 (3 pages) | Cited 13 times

Online Publication Date: 5 March 2007

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Ferroelectric single crystal of Na1/2Bi1/2TiO3-BaTiO3 (NBT-BT) and Ce doped NBT-BT have been grown by flux technique. It is found that the addition of Ce plays a significant role in improving the ferroelectric properties of NBT-BT crystals, (i) by improving the value of the dielectric constant at room temperature and at Tm (the phase transition temperature between antiferroelectric and paraelectric phases with dielectric maximum), (ii) by increasing the depolarization temperature (Td) and Tm, (iii) by increasing the degree of diffuseness, and (iv) by increasing the remnant polarization (Pr) and coercive field (Ec). The reasons behind these enhancements of ferroelectric properties are discussed in detail.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
61.72.up Other materials

Low temperature (<400 °C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation

Jung-Chin Chiang and Jenn-Gwo Hwu

Appl. Phys. Lett. 90, 102902 (2007); http://dx.doi.org/10.1063/1.2711290 (3 pages) | Cited 5 times

Online Publication Date: 6 March 2007

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A cost-effective method of shadow evaporation of aluminum is adopted to prepare ultrathin aluminum film. The formation of different thicknesses of aluminum film on one wafer was demonstrated. The mask sheltered the wafer from the pure aluminum source to achieve ultrathin aluminum film. Aluminum oxide (Al2O3) was obtained by nitric acid oxidation of the evaporated aluminum directly at room temperature. In this work, the leakage current in the sample of equivalent oxide thickness of 2 nm is one order of magnitude reduction in comparison with that in the conventional thermal SiO2 sample and the charge trapping phenomenon is not obvious.
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68.55.A- Nucleation and growth
77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.Mq Oxidation

180° ferroelectric domains as elastic domains

Lang Chen and A. L. Roytburd

Appl. Phys. Lett. 90, 102903 (2007); http://dx.doi.org/10.1063/1.2711408 (3 pages) | Cited 8 times

Online Publication Date: 7 March 2007

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Thermodynamic analysis shows that 180° ferroelectric domains under an external electric field behave as elastic domains due to the converse piezoelectric effect. The interdomain elastic interaction between 180° ferroelectric domains is an important factor in determining the effective dielectric and piezoelectric responses of thin film constrained by a substrate and therefore cannot be neglected.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
77.65.-j Piezoelectricity and electromechanical effects

Two-dimensional mapping of triaxial strain fields in a multiferroic BiFeO3 thin film using scanning x-ray microdiffraction

Chung W. Bark, Kyung C. Cho, Yang M. Koo, Nobumichi Tamura, Sangwoo Ryu, and Hyun M. Jang

Appl. Phys. Lett. 90, 102904 (2007); http://dx.doi.org/10.1063/1.2711530 (3 pages) | Cited 1 time

Online Publication Date: 7 March 2007

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The dramatically enhanced polarizations and saturation magnetizations observed in the epitaxially constrained BiFeO3 (BFO) thin films with their pronounced grain-orientation dependence have attracted much attention and are attributed largely to the constrained in-plane strain. Thus, it is highly desirable to directly obtain information on the two-dimensional (2D) distribution of the in-plane strain and its correlation with the grain orientation of each corresponding microregion. Here the authors report a 2D quantitative mapping of the grain orientation and the local triaxial strain field in a 250 nm thick multiferroic BFO film using a synchrotron x-ray microdiffraction technique. This direct scanning measurement demonstrates that the deviatoric component of the in-plane strain tensor is between 5×10−3 and 6×10−3 and that the local triaxial strain is fairly well correlated with the grain orientation in that particular region.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
68.60.Bs Mechanical and acoustical properties
77.55.-g Dielectric thin films
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.55.-a Thin film structure and morphology

Dielectric relaxations in Ba(Fe1/2Ta1/2)O3 giant dielectric constant ceramics

Z. Wang, X. M. Chen, L. Ni, Y. Y. Liu, and X. Q. Liu

Appl. Phys. Lett. 90, 102905 (2007); http://dx.doi.org/10.1063/1.2711767 (3 pages) | Cited 28 times

Online Publication Date: 7 March 2007

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Dielectric relaxations of Ba(Fe1/2Ta1/2)O3 ceramics were investigated and discussed over a broad temperature and frequency range. Two dielectric relaxations following Arrhenius law were observed at 153–382 and 440–623 K, where there was a giant dielectric constant step between them. The frequency dependent rapid drop of dielectric constant at 153–382 K was nearly a Debye relaxation with the intrinsic nature, while the high temperature dielectric relaxation with an extremely high dielectric constant peak and very strong frequency dispersion was attributed to the defect ordering but not a typical relaxor ferroelectric behavior. The O2 annealing almost completely suppressed the dielectric peak and subsequently extended the giant dielectric step, while the low temperature dielectric relaxation and the magnitude of such step were not obviously affected.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
81.40.Gh Other heat and thermomechanical treatments

Ferroelectric and dielectric properties of Nd3+/Zr4+ cosubstituted Bi4Ti3O12 thin films

X. L. Zhong, J. B. Wang, M. Liao, L. Z. Sun, H. B. Shu, C. B. Tan, and Y. C. Zhou

Appl. Phys. Lett. 90, 102906 (2007); http://dx.doi.org/10.1063/1.2711415 (3 pages) | Cited 5 times

Online Publication Date: 8 March 2007

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Thin films of Nd3+/Zr4+ cosubstituted Bi4Ti3O12 (BIT), i.e., Bi3.15Nd0.85Ti2.8Zr0.2O12 (BNTZ), were fabricated on Pt/Ti/SiO2/Si(100) substrates by chemical solution deposition and annealed at different temperatures of 600, 650, 700, and 800 °C. The effects of annealing temperature on the microstructure, leakage current, ferroelectric, and dielectric properties of the BNTZ films were investigated in detail. Significantly, compared with the Bi3.15Nd0.85Ti3O12 film, the BNTZ thin film has a lower coercive field (2Ec) and leakage current density and a slightly larger remnant polarization (2Pr). It shows that Nd3+/Zr4+ cosubstitution in BIT film might be an effective way to improve ferroelectric properties of BIT.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.40.Gh Other heat and thermomechanical treatments
77.22.Ej Polarization and depolarization

Effects of Mn doping on dielectric and piezoelectric properties of 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystals

Laihui Luo, Dan Zhou, Yanxue Tang, Yanmin Jia, Haiqing Xu, and Haosu Luo

Appl. Phys. Lett. 90, 102907 (2007); http://dx.doi.org/10.1063/1.2711533 (3 pages) | Cited 9 times

Online Publication Date: 8 March 2007

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The dielectric and piezoelectric properties of the Mn-doped 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 (PMNT) crystals oriented along ⟨001⟩ and ⟨110⟩ directions, respectively, have been investigated. The investigations have shown that 3 at.% Mn substitution results in (i) a large increment of coercive field at the cost of piezoelectric response, (ii) an increased Curie temperature and an enhanced stability of the ferroelectric rhombohedral phase, which enable a wider operation temperature range, and (iii) enhanced linearity in electric field induced strain with lower hysteresis. The hardened PMNT crystals favor their applications in high power transducers.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis

High temperature stability of lanthanum silicate dielectric on Si (001)

J. S. Jur, D. J. Lichtenwalner, and A. I. Kingon

Appl. Phys. Lett. 90, 102908 (2007); http://dx.doi.org/10.1063/1.2712805 (3 pages) | Cited 8 times

Online Publication Date: 9 March 2007

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Integration of a high-κ dielectric into complementary metal-oxide-semiconductor devices requires thermal stability of the amorphous dielectric phase and chemical compatibility with silicon. The stability of amorphous lanthanum silicate on Si (001) is investigated by means of metal-insulator-semiconductor capacitor measurements, back side secondary ion mass spectrometry (SIMS) depth profiling, and high-resolution transmission electron microscopy (HRTEM) after a 1000 °C, 10 s anneal in nitrogen ambient. Back side SIMS depth profiling of the TaN/LaSiOx/Si gate stack reveals no detectable lanthanum in the silicon substrate, and HRTEM shows stability of the amorphous LaSiOx. An effective work function near 4.0 eV is obtained for these gate stacks, making the stack design ideal for n-type metal-oxide-semiconductor device fabrication.
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77.55.-g Dielectric thin films
61.43.Er Other amorphous solids
61.72.Cc Kinetics of defect formation and annealing
73.30.+y Surface double layers, Schottky barriers, and work functions
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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