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5 Mar 2007

Volume 90, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 101901 (2007); http://dx.doi.org/10.1063/1.2712772 (3 pages)

S. N. Yi, Jong H. Na, Kwan H. Lee, Anas F. Jarjour, Robert A. Taylor, Y. S. Park, T. W. Kang, S. Kim, D. H. Ha, G. Andrew, and D. Briggs
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High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

Raghavasimhan Sreenivasan, Takuya Sugawara, Krishna C. Saraswat, and Paul C. McIntyre

Appl. Phys. Lett. 90, 102101 (2007); http://dx.doi.org/10.1063/1.2643085 (3 pages) | Cited 15 times

Online Publication Date: 5 March 2007

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Tantalum nitride thin films were deposited at 400 °C by plasma enhanced atomic layer deposition using an amido-based metal organic tantalum precursor. An Ar/N2/H2 mixture was flowed upstream of a remote plasma system to produce the reactive species used for the nitridation process. The as-deposited film was amorphous and contained 15 at. % oxygen in the bulk of the film. High resolution photoelectron spectroscopy studies of the Ta 4f feature were consistent with the presence of the semiconducting Ta3N5 phase in the as-deposited films. Electron diffraction studies were carried out by annealing the Ta3N5 film in situ in a transmission electron microscope. The high resistivity Ta3N5 phase crystallized into the cubic TaN phase at 850 °C. This transformation appeared to coincide with outdiffusion of excess nitrogen from the Ta3N5 film during the anneal. The resistivity of the crystallized film was estimated to be 600 μΩ cm from four point probe measurements.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
77.55.-g Dielectric thin films
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Lithographic engineering of anisotropies in (Ga,Mn)As

S. Hümpfner, K. Pappert, J. Wenisch, K. Brunner, C. Gould, G. Schmidt, L. W. Molenkamp, M. Sawicki, and T. Dietl

Appl. Phys. Lett. 90, 102102 (2007); http://dx.doi.org/10.1063/1.2710478 (3 pages) | Cited 29 times

Online Publication Date: 5 March 2007

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The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here the authors present a method which provides patterning induced anisotropy that not only can be applied locally but also dominates over the intrinsic material anisotropy at all temperatures.
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75.50.Pp Magnetic semiconductors
75.30.Gw Magnetic anisotropy
75.50.Dd Nonmetallic ferromagnetic materials
81.16.Nd Micro- and nanolithography

Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations

Mathieu Luisier, Andreas Schenk, and Wolfgang Fichtner

Appl. Phys. Lett. 90, 102103 (2007); http://dx.doi.org/10.1063/1.2711275 (3 pages) | Cited 25 times

Online Publication Date: 6 March 2007

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Nanowire transistors with a perfect crystal structure and a well-defined Si–SiO2 interface cannot be grown with the actual technology. The shape of the semiconducting channel varies from source to drain. By self-consistently coupling the three-dimensional Schrödinger and Poisson equations, interface roughness (IR) effects are studied in Si triple-gate nanowire transistors with [100], [110], [111], and [112] oriented channels. The full-band electronic transport is computed in the nearest-neighbor sp3d5s* tight-binding model. IR is included by adding or removing atoms at the Si surface. A comparison of the different channel orientations is achieved by calculating the variations of the transistor threshold voltage.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, and Tamotsu Hashizume

Appl. Phys. Lett. 90, 102104 (2007); http://dx.doi.org/10.1063/1.2711374 (3 pages) | Cited 12 times

Online Publication Date: 6 March 2007

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A three-terminal nanowire junction device controlled by double nanometer-sized Schottky wrap gates (WPGs), which control left and right branches independently, are fabricated utilizing AlGaAs/GaAs etched nanowires and characterized experimentally. Fabricated device exhibits clear nonlinear characteristics of output voltage at the center terminal by applying voltages to left and right terminals in push-pull fashion. Applying asymmetric gate voltages to left and right WPGs provides clear asymmetry in the output voltage. The nonlinearity in the low voltage regions is greatly enhanced by squeezing both left and right branches using WPGs.
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85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling

All-optical analysis of carrier and spin relaxation in InGaAs/GaAs saturable-absorber structures

Ramunas Aleksiejunas, Arunas Kadys, Kestutis Jarasiunas, Florian Saas, Uwe Griebner, and Jens W. Tomm

Appl. Phys. Lett. 90, 102105 (2007); http://dx.doi.org/10.1063/1.2711400 (3 pages) | Cited 1 time

Online Publication Date: 6 March 2007

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Results of an all-optical analysis of basic semiconductor parameters such as carrier mobilities, lifetimes, and electron spin relaxation time of implanted In0.25Ga0.75As/GaAs multiple quantum well saturable-absorber structures for the 1060 nm spectral range are presented. These parameters are determined in a wide range of optical excitation, even at the practical operation point of such devices. This is accomplished by the application of polarization-resolved pump-probe and four-wave-mixing spectroscopies. The all-optical approach allows the determination of mobilities and spin relaxation time from the same experiments and points to the D’yakonov-Perel mechanism to govern the electron spin relaxation at room temperature.
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78.66.Fd III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi

Appl. Phys. Lett. 90, 102106 (2007); http://dx.doi.org/10.1063/1.2679254 (3 pages) | Cited 24 times

Online Publication Date: 6 March 2007

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The authors measured low-temperature (6–28 K) conductance in nanoscale p-channel field-effect transistors lightly doped with boron. They observed a conductance modulation, which they ascribed to the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, suggesting that what the authors have observed is single-charge-transistor operation by a single-acceptor quantum dot.
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85.30.Tv Field effect devices

Current-voltage characteristics of p-GaAs/n-GaN heterojunction fabricated by wafer bonding

Ting Liang, Xia Guo, Baolu Guan, Jing Guo, Xiaoling Gu, Qiaoming Lin, Di Wu, Guo Gao, Yanxu Zhu, and Guandi Shen

Appl. Phys. Lett. 90, 102107 (2007); http://dx.doi.org/10.1063/1.2710750 (3 pages) | Cited 2 times

Online Publication Date: 7 March 2007

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p-GaAs/n-GaN heterojunction was fabricated by wafer bonding. Its current-voltage characteristic was systematically investigated at room temperature and at a variety of low temperature. The curves of different temperatures in the logarithmic scales indicate space-charge-limited currents (SCLCs) in the high voltage region (>0.4 V). SCLC current-transport mechanism was confirmed by fitting data. Single-charge injection and the amorphous layer at the bonding interface are presumably the reasons to cause SCLCs.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Structures and magnetic properties of wurtzite Zn1−xCoxO dilute magnetic semiconductor nanocomposites

Tongfei Shi, Sanyuan Zhu, Zhihu Sun, Shiqiang Wei, and Wenhan Liu

Appl. Phys. Lett. 90, 102108 (2007); http://dx.doi.org/10.1063/1.2711180 (3 pages) | Cited 33 times

Online Publication Date: 7 March 2007

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Cobalt-doped ZnO dilute magnetic semiconductor nanocomposites Zn1−xCoxO with Co concentrations from 0.02 to 0.25 were prepared by the sol-gel method. The magnetic measurement shows paramagnetic behavior for all the samples. The structures of these composites were investigated by x-ray diffraction and fluorescence x-ray absorption fine structure spectroscopy. It is indicated that at low Co concentration (x ⩽ 0.05), the Co atoms are incorporated into the ZnO lattice and located at the substitutional sites of the Zn atoms. At higher Co doping concentration (x ≥ 0.10), the secondary phase Co3O4 is precipitated. Correlating the magnetic behavior with the structural properties of the Zn1−xCoxO nanocomposites, the authors interpret the paramagnetism to be intrinsic in nature as a result of the low effective doping of Co in ZnO and the lack of oxygen vacancies.
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61.46.-w Structure of nanoscale materials
75.50.Pp Magnetic semiconductors
75.20.Ck Nonmetals
78.70.Dm X-ray absorption spectra
61.72.uj III-V and II-VI semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Tuning alloy disorder in diluted magnetic semiconductors in high fields to 89 T

S. A. Crooker and N. Samarth

Appl. Phys. Lett. 90, 102109 (2007); http://dx.doi.org/10.1063/1.2711370 (3 pages) | Cited 4 times

Online Publication Date: 7 March 2007

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Alloy disorder in II-VI diluted magnetic semiconductors (DMS) is typically reduced when the local magnetic spins align in an applied magnetic field. An important and untested expectation of current models of alloy disorder, however, is that alloy fluctuations in many DMS compounds should increase again in very large magnetic fields of the order of 100 T. Here the authors measure the disorder potential in a Zn0.70Cd0.22Mn0.08Se quantum well via the low temperature photoluminescence linewidth using a pulsed magnet system to ∼ 89 T. Above 70 T, the linewidth is observed to increase again, in accord with a simple model of alloy disorder.
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78.67.De Quantum wells
78.55.Et II-VI semiconductors
75.50.Pp Magnetic semiconductors

Physical mechanisms of in situ surface gettering of metals in ribbon silicon for solar cells

D. R. Khanal, T. Buonassisi, M. A. Marcus, A. A. Istratov, and E. R. Weber

Appl. Phys. Lett. 90, 102110 (2007); http://dx.doi.org/10.1063/1.2711523 (3 pages) | Cited 2 times

Online Publication Date: 7 March 2007

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The authors have employed synchrotron-based x-ray absorption near-edge spectroscopy and x-ray fluorescence microscopy to identify the chemical state and distribution of metals gettered to the surface of String Ribbon silicon grown with CO-ambient gas. Copper and nickel precipitates were observed in their equilibrium silicide phases, indicating a dominant relaxation gettering mechanism. In addition, microwave photoconductive decay measurements show a decrease in bulk iron concentration and a tenfold increase in minority carrier lifetime in CO-ambient grown material. Implications of the observed gettering mechanism on ribbon-type solar cells are discussed.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
84.60.Jt Photoelectric conversion
78.70.Dm X-ray absorption spectra
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Effect of dislocations on charge carrier mobility–lifetime product in synthetic single crystal diamond

A. Lohstroh, P. J. Sellin, S. G. Wang, A. W. Davies, J. Parkin, R. W. Martin, and P. R. Edwards

Appl. Phys. Lett. 90, 102111 (2007); http://dx.doi.org/10.1063/1.2711754 (3 pages) | Cited 15 times

Online Publication Date: 7 March 2007

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The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility–lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
72.80.Cw Elemental semiconductors
78.55.Ap Elemental semiconductors

Transport limitations and Schottky barrier height in titanium silicide nanowires grown on the Si(111) surface

T. Soubiron, R. Stiufiuc, L. Patout, D. Deresmes, B. Grandidier, D. Stiévenard, J. Köble, and M. Maier

Appl. Phys. Lett. 90, 102112 (2007); http://dx.doi.org/10.1063/1.2711378 (3 pages) | Cited 7 times

Online Publication Date: 8 March 2007

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The authors have performed electrical measurements at variable temperatures on self-assembled titanium silicide nanowires (NWs) grown on a Si(111) surface. The authors find a metallic I(V) characteristic for the NWs at a temperature of 77 K, whereas scanning tunneling spectroscopic measurements obtained at temperatures below 25 K yield a rectifying behavior. This behavior indicates that the NWs are electronically decoupled from the Si surface on a voltage range of several hundreds of meV at low temperatures. From these measurements, the authors precisely determine the Schottky barrier height between the NWs and the Si surface.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Metallic oxide p-I-n junctions with ferroelectric as the barrier

J. Yuan, H. Wu, L. X. Cao, L. Zhao, K. Jin, B. Y. Zhu, S. J. Zhu, J. P. Zhong, J. Miao, B. Xu, X. Y. Qi, X. G. Qiu, X. F. Duan, and B. R. Zhao

Appl. Phys. Lett. 90, 102113 (2007); http://dx.doi.org/10.1063/1.2711414 (3 pages) | Cited 6 times

Online Publication Date: 8 March 2007

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The authors report the formation of the metallic oxide p-I-n junctions with the ferroelectric (Ba,Sr)TiO3 (BST) as the barrier. The junctions with different thicknesses of BST are investigated. With appropriate thickness, the junctions possess definite parameters, such as the negligible reversed current density ( ⩽ 10−7 A/cm2), large breakdown voltage (>7 V), and ultrahigh rectification (>2×104) in the bias voltage ⩽ 2.0 V and temperature range from 5 to 300 K. It is under consideration that the built-in field V0, the ferroelectric reversed polarized field Vrp, and the resistivity of the BST layer together decide the transport properties of the junctions.
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85.30.Kk Junction diodes
73.40.Ei Rectification
74.72.-h Cuprate superconductors
77.22.Ej Polarization and depolarization
77.22.Jp Dielectric breakdown and space-charge effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Tuning electrical properties of conjugated polymer nanowires with the diameter

Jean Luc Duvail, Yunze Long, Stéphane Cuenot, Zhaojia Chen, and Changzhi Gu

Appl. Phys. Lett. 90, 102114 (2007); http://dx.doi.org/10.1063/1.2711527 (3 pages) | Cited 23 times

Online Publication Date: 8 March 2007

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The role of the nanowire diameter on the electrical properties of isolated poly(3,4-ethylenedioxythiophene) nanowires has been studied systematically by a four-terminal technique. A transition from an insulating to a metallic regime is observed when the diameter decreases from 190 to 35 nm and a transition from a metallic to an insulating regime takes place for the smaller diameters. These results are of importance for the different potential applications based on polymer nanowires or nanotubes.
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73.63.Nm Quantum wires
71.30.+h Metal-insulator transitions and other electronic transitions
61.46.Fg Nanotubes

Origins of shallow level and hole mobility in codoped p-type ZnO thin films

H. B. Ye, J. F. Kong, W. Z. Shen, J. L. Zhao, and X. M. Li

Appl. Phys. Lett. 90, 102115 (2007); http://dx.doi.org/10.1063/1.2711538 (3 pages) | Cited 8 times

Online Publication Date: 8 March 2007

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A combination study of structural, optical, and electrical properties has been carried out on N–In codoped p-type ZnO thin films for the origins of shallow level and hole mobility. The observed small activation energy of ∼ 20 meV for the hole concentration corresponds well to the results from photoluminescence and conductivity data, revealing the grain boundary trapping nature of the shallow level. The achieved hole mobility is mainly due to the lack of grain boundary barrier effect, and the codoping yielded weak ionized impurity scattering. The authors have also revealed the scattering and conduction mechanisms in these p-ZnO films.
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73.61.Ga II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
61.72.Mm Grain and twin boundaries
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Dominant effect of near-interface native point defects on ZnO Schottky barriers

L. J. Brillson, H. L. Mosbacker, M. J. Hetzer, Y. Strzhemechny, G. H. Jessen, D. C. Look, G. Cantwell, J. Zhang, and J. J. Song

Appl. Phys. Lett. 90, 102116 (2007); http://dx.doi.org/10.1063/1.2711536 (3 pages) | Cited 44 times

Online Publication Date: 8 March 2007

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The authors used depth-resolved cathodoluminescence spectroscopy and current-voltage measurements to probe metal-ZnO diodes as a function of native defect concentration, oxygen plasma processing, and metallization. The results show that resident native defects in ZnO single crystals and native defects created by the metallization process dominate metal-ZnO Schottky barrier heights and ideality factors. Results for ZnO(000math) faces processed with room temperature remote oxygen plasmas to remove surface adsorbates and reduce subsurface native defects demonstrate the pivotal importance of crystal growth quality and metal-ZnO reactivity in forming near-interface states that control Schottky barrier properties.
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71.55.Gs II-VI semiconductors
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.J- Point defects and defect clusters
61.72.S- Impurities in crystals

Orientation control of pentacene molecules and transport anisotropy of the thin film transistors by photoaligned polyimide film

Dong Guo, Kenji Sakamoto, Kazushi Miki, Susumu Ikeda, and Koichiro Saiki

Appl. Phys. Lett. 90, 102117 (2007); http://dx.doi.org/10.1063/1.2711776 (3 pages) | Cited 15 times

Online Publication Date: 8 March 2007

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The authors report preferential in-plane molecular orientation and charge transport anisotropy in pentacene thin film transistors achieved by using a photoaligned polyimide film with large in-plane anisotropy. Polarized infrared absorption spectra indicated that the molecular plane normal of the pentacene preferentially aligned along the average orientation direction of the underlying polyimide backbone structure. Atomic force microscope images showed that the alignment of the polyimide backbone structure significantly modified the pentacene growth process and remarkably increased the grain size. The charge carrier mobility along the polyimide alignment direction was about twice of that perpendicular to it.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Nuclear spin population and its control toward initialization using an all-electrical submicron scale nuclear magnetic resonance device

T. Ota, G. Yusa, N. Kumada, S. Miyashita, and Y. Hirayama

Appl. Phys. Lett. 90, 102118 (2007); http://dx.doi.org/10.1063/1.2711520 (3 pages) | Cited 7 times

Online Publication Date: 8 March 2007

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The authors study the nuclear spin population in a GaAs quantum well structure and demonstrate its initialization using an all-electrical nuclear magnetic resonance (NMR) device. In their device, nuclear spins are dynamically polarized in a submicron scale region defined by split gates. The relative population of each nuclear spin state is estimated from resistively detected NMR spectra combined with numerical analysis. They find that nuclear spin populations are determined by electron spin configurations. By applying radio frequency pulses to the strongly polarized nuclear spins, they demonstrate the creation of two-qubit effective pure states, which is a crucial step toward NMR quantum computation.
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76.60.Es Relaxation effects
71.70.Jp Nuclear states and interactions
73.21.Fg Quantum wells

Frequency oscillations of the Shapiro steps

Bambi Hu and Jasmina Tekić

Appl. Phys. Lett. 90, 102119 (2007); http://dx.doi.org/10.1063/1.2710788 (3 pages) | Cited 6 times

Online Publication Date: 9 March 2007

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The frequency dependence of the dynamical-mode locking phenomena in the ac driven dissipative Frenkel-Kontorova model is studied by the molecular-dynamics simulations. It was found that the Shapiro steps exhibit very strong frequency dependence influenced by the amplitude of ac force. At the low frequencies, in the large amplitude regime, the oscillations of the step width and the critical depinning force have been observed. These oscillations are directly related to the stability and the existence of the interference effects in the real systems.
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74.50.+r Tunneling phenomena; Josephson effects

Very high-mobility organic single-crystal transistors with in-crystal conduction channels

J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, T. Shimoda, and S. Ogawa

Appl. Phys. Lett. 90, 102120 (2007); http://dx.doi.org/10.1063/1.2711393 (3 pages) | Cited 130 times

Online Publication Date: 9 March 2007

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Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers. The interface with minimized surface levels allows carriers to distribute deep into the crystals by more than a few molecular layers under weak gate electric fields, so that the inner channel plays a significant part in the transfer performance. With the in-crystal carriers less affected by scattering mechanisms at the interface, the maximum transistor mobility reaches 18 cm2/V s and the contact-free intrinsic mobility turned out to be 40 cm2/V s as the result of four-terminal measurement. These are the highest values ever reported for organic transistors.
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85.30.Tv Field effect devices

Investigation of CdZnTe crystal defects using scanning probe microscopy

G. Koley, J. Liu, and Krishna C. Mandal

Appl. Phys. Lett. 90, 102121 (2007); http://dx.doi.org/10.1063/1.2712496 (3 pages) | Cited 17 times

Online Publication Date: 9 March 2007

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Surface electronic properties of Cd0.9Zn0.1Te (CZT) crystals have been characterized using scanning spreading resistance microscopy (SSRM) and correlated with IR transmittance maps. SSRM performed on CZT samples showed excellent correlation with Te precipitates determined from infrared images. The average probe current was observed to be more than two orders of magnitude higher for the sample with higher Te precipitates. Stationary probe current-voltage relationship was found to be exponential and was modeled based on thermionic emission theory. Based on this model, the surface barriers of the CZT samples were found to be significantly different, which was confirmed independently from Kelvin probe measurements.
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73.25.+i Surface conductivity and carrier phenomena
79.40.+z Thermionic emission
61.72.Mm Grain and twin boundaries
61.72.Yx Interaction between different crystal defects; gettering effect
64.75.-g Phase equilibria
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