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12 Mar 2007

Volume 90, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 90, 113108 (2007); http://dx.doi.org/10.1063/1.2714186 (3 pages)

Samuel L. Mensah, Vijaya K. Kayastha, Ilia N. Ivanov, David B. Geohegan, and Yoke Khin Yap
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High quality Fe3−δO4/InAs hybrid structure for electrical spin injection

Marhoun Ferhat and Kanji Yoh

Appl. Phys. Lett. 90, 112501 (2007); http://dx.doi.org/10.1063/1.2713784 (3 pages) | Cited 15 times

Online Publication Date: 14 March 2007

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Single crystalline Fe3−δO4 (0 ⩽ δ ⩽ 0.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions, in situ real time reflection high-energy electron diffraction patterns, along with ex situ atomic force microscopy, indicate that (001) Fe3−δO4 can be grown under step-flow-growth mode with a characteristic (math×math)R45 surface reconstruction. X-ray photoelectron spectroscopy demonstrates the possibility of obtaining iron oxides with compositions ranging from Fe3O4 to γ-Fe2O3. Measurements with a superconducting quantum interference device magnetometer at 300 K show good magnetic properties, suggesting that iron-based oxides may be promising for spintronic applications.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.A- Nucleation and growth
79.60.Dp Adsorbed layers and thin films
75.47.Pq Other materials

Exchange bias effect and enhanced magnetoresistance in La0.67Sr0.33MnO3/SrTiO3 superlattices

S. J. Zhu, J. Yuan, B. Y. Zhu, F. C. Zhang, B. Xu, L. X. Cao, X. G. Qiu, B. R. Zhao, and P. X. Zhang

Appl. Phys. Lett. 90, 112502 (2007); http://dx.doi.org/10.1063/1.2713175 (3 pages) | Cited 6 times

Online Publication Date: 15 March 2007

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The magnetization and electrical transport in the superlattices consisting of ferromagnetic La0.67Sr0.33MnO3 and nonmagnetic insulating SrTiO3 layers have been investigated. A significant displacement of the hysteresis loop along the field axis is observed when the sample is field-cooled through the blocking temperature TB. The strength of displacement, termed as exchange field HE, is found to exponentially decay with temperature. The magnetoresistance in field-cooling process is obviously enhanced compared to that in zero-field-cooling process. The existence of the disordered spin state at the interface is suggested to be the origin of such phenomena.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.75.-c Magnetic properties of nanostructures
73.40.-c Electronic transport in interface structures
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Et Exchange and superexchange interactions
75.47.-m Magnetotransport phenomena; materials for magnetotransport

Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs

Shinobu Ohya, Kenichi Ohno, and Masaaki Tanaka

Appl. Phys. Lett. 90, 112503 (2007); http://dx.doi.org/10.1063/1.2713176 (3 pages) | Cited 23 times

Online Publication Date: 15 March 2007

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The authors have studied the magneto-optical and magnetotrasnport properties of Ga1−xMnxAs thin films with high Mn concentrations (x = 12.2%–21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150–190 °C and by reducing the film thickness to 10 nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature up to 170 K.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
78.20.Ls Magneto-optical effects
73.61.Ey III-V semiconductors
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Spin-transfer-induced magnetization switching in tunnel junctions with nanocurrent channels

Yisong Zhang, Zongzhi Zhang, Yaowen Liu, B. Ma, and Q. Y. Jin

Appl. Phys. Lett. 90, 112504 (2007); http://dx.doi.org/10.1063/1.2713143 (3 pages) | Cited 8 times

Online Publication Date: 16 March 2007

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Spin-transfer-induced magnetization switching processes are evidenced by the “snapshots” of magnetic configurations for junctions containing nanocurrent channels (NCCs). The switching behaviors are found to be closely related to the NCC size and its actual location. Both the switching time t and critical current density Jc decrease with the increase of NCC size. Faster switching and lower Jc are observed for NCC located in the center. This work suggests a reasonable design frame to efficiently manipulate the Jc reduction and fast switching in practical spin-transfer-switched devices.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.75.-c Magnetic properties of nanostructures
85.35.-p Nanoelectronic devices
85.70.-w Magnetic devices

Channel width effect on the spin-orbit interaction parameter in a two-dimensional electron gas

Jae Hyun Kwon, Hyun Cheol Koo, Joonyeon Chang, Suk-Hee Han, and Jonghwa Eom

Appl. Phys. Lett. 90, 112505 (2007); http://dx.doi.org/10.1063/1.2714993 (3 pages) | Cited 19 times

Online Publication Date: 16 March 2007

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The spin splitting energy obtained from the Shubnikov–de Haas oscillation increases with decreasing channel width (w) of the InAs-based heterostructure. Since the surface charge concentration depends only weakly on w, the channel width dependence of the spin splitting energy is attributed to variations in the spin-orbit interaction strength. The spin-orbit interaction parameter was found to be inversely proportional to math in the range of w = 2–64 μm. Our findings indicate that a strong spin-orbit interaction is induced in a narrow channel due to suppression of the spin precession length for a thin quantum well layer system.
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73.21.Fg Quantum wells
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.63.Hs Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
72.20.My Galvanomagnetic and other magnetotransport effects
85.75.Hh Spin polarized field effect transistors

FeCoSiN film with ordered FeCo nanoparticles embedded in a Si-rich matrix

Yan Liu, C. Y. Tan, Z. W. Liu, and C. K. Ong

Appl. Phys. Lett. 90, 112506 (2007); http://dx.doi.org/10.1063/1.2714280 (3 pages) | Cited 16 times

Online Publication Date: 16 March 2007

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FeCoSiN film consisting of ordered arrays of FeCo nanoparticles embedded in a Si-rich matrix was fabricated on silicon substrate by reactive rf magnetron sputtering. These nanoparticles have a face-centered cubic structure and a mean diameter of ∼ 7 nm. The FeCoSiN film has a very high resistivity of up to 1000 μΩ cm due to the breakup of the metal continuum into isolated metal nanoparticles. The static and dynamic magnetic properties of the film were also investigated. A saturation magnetization of 1.0 T, coercivity of less than 5 Oe in both easy and hard axes, and anisotropy field of 27 Oe were obtained. The microwave permeability measurement showed a permeability of around 400 at low frequency and a ferromagnetic resonance frequency of about 1.1 GHz.
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75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Tt Fine-particle systems; nanocrystalline materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
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