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12 Mar 2007

Volume 90, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 90, 113108 (2007); http://dx.doi.org/10.1063/1.2714186 (3 pages)

Samuel L. Mensah, Vijaya K. Kayastha, Ilia N. Ivanov, David B. Geohegan, and Yoke Khin Yap
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Finite size effect in ZnO nanowires

Pai-Chun Chang, Chung-Jen Chien, Daniel Stichtenoth, Carsten Ronning, and Jia Grace Lu

Appl. Phys. Lett. 90, 113101 (2007); http://dx.doi.org/10.1063/1.2712507 (3 pages) | Cited 53 times

Online Publication Date: 12 March 2007

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To clarify the size effect in semiconductor nanowires with decreasing diameters but not yet reaching the quantum confinement region, single crystalline zinc oxide nanowires with diameters around 10 nm are synthesized. Electrical transport measurements of these thin nanowires show significant increase in conductivity accompanied by diminished gate modulation and reduced mobility. This phenomenon is a result of the enrichment of surface states owing to the increased surface-to-volume ratio. The enhanced surface effect is confirmed by the temperature dependent photoluminescence measurements and contributes to the “anomalous” blueshift. This study shows that surface states play a dominant role in the electrical and optical properties of quasi-one-dimensional materials.
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73.63.Nm Quantum wires
78.67.Lt Quantum wires
72.20.Fr Low-field transport and mobility; piezoresistance
78.55.Et II-VI semiconductors

Nanoelectromechanical switches based on carbon nanotubes for microwave and millimeter waves

M. Dragoman, A. Takacs, A. A. Muller, H. Hartnagel, R. Plana, K. Grenier, and D. Dubuc

Appl. Phys. Lett. 90, 113102 (2007); http://dx.doi.org/10.1063/1.2712774 (3 pages) | Cited 7 times

Online Publication Date: 12 March 2007

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In this letter the authors analyze two configurations of nanoelectromechanical switches, which are working in the microwave and millimeter wave frequency ranges. Metallic nanotubes vertically or horizontally positioned on a propagating high frequency planar waveguide disable or enable the electromagnetic field propagation, whether they are actuated or not by a dc electric field of a few volts. Although the dimensions of metallic nanotubes are very small in comparison with the planar waveguide dimensions and the operating wavelengths, these switches are very efficient and agile.
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84.40.Az Waveguides, transmission lines, striplines
84.32.Dd Connectors, relays, and switches
81.07.De Nanotubes
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.35.Kt Nanotube devices

Tuning InAs quantum dots for high areal density and wideband emission

C. Y. Ngo, S. F. Yoon, W. J. Fan, and S. J. Chua

Appl. Phys. Lett. 90, 113103 (2007); http://dx.doi.org/10.1063/1.2713148 (3 pages) | Cited 16 times

Online Publication Date: 12 March 2007

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The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot (QD). Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper tuning, both high areal density and large photoluminescence spectral width were obtained. Areal density of 1.5×1011 cm−2 is four times higher than those previously reported, while spectral width of 136 nm is the broadest spectral width obtained without any forms of band gap engineering. These results will contribute to an improvement in the performance of QD superluminescent diode.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

Single-electron transistors with wide operating temperature range

C. Dubuc, J. Beauvais, and D. Drouin

Appl. Phys. Lett. 90, 113104 (2007); http://dx.doi.org/10.1063/1.2713171 (3 pages) | Cited 7 times

Online Publication Date: 12 March 2007

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Single-electron transistors are fabricated with a planar self-aligned process using chemical mechanical polishing. The method is demonstrated with Ti/TiOx junctions and resistless lithography. The device characterization showed Coulomb blockade up to 433 K. High temperature data allowed one to calculate the impact of the process variations on the charging energy and thus on a realistic operating temperature. It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs. These approaches are promising because advanced functionality is created by an optimal combination of both technology strengths.
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85.35.Gv Single electron devices
85.35.Ds Quantum interference devices
85.40.Hp Lithography, masks and pattern transfer
73.23.Hk Coulomb blockade; single-electron tunneling

Synthesis and optical properties of InN nanowires and nanotubes

H. Y. Xu, Z. Liu, X. T. Zhang, and S. K. Hark

Appl. Phys. Lett. 90, 113105 (2007); http://dx.doi.org/10.1063/1.2712801 (3 pages) | Cited 9 times

Online Publication Date: 13 March 2007

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InN nanowires and faceted hexagonal InN nanotubes are synthesized by catalyst-free chemical vapor deposition at different temperatures. Both have the single crystalline wurtzite structure and grow along the c axis. Different growth dynamics are suggested for the difference in morphology. Observations of phonon-plasmon coupled modes in their Raman scattering suggest of high electron concentrations. Absorption edges in their optical spectra have energies slightly higher than 1 eV, showing blueshifts from the fundamental band gap of ∼ 0.7 eV, recently observed in epitaxial films. The shifts are argued to be the result of the Burstein-Moss effect.
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78.67.Lt Quantum wires
78.67.Ch Nanotubes
68.65.La Quantum wires (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.Fg Nanotubes
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Quasimonochromatic emission spectra in the near field by polar semiconductor thermal sources

V. N. Sokolov, B. D. Kong, K. W. Kim, and R. J. Trew

Appl. Phys. Lett. 90, 113106 (2007); http://dx.doi.org/10.1063/1.2713166 (3 pages) | Cited 2 times

Online Publication Date: 13 March 2007

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The near-field spectra of the electromagnetic field emitted from a planar surface are theoretically investigated for a number of polar semiconductor and dielectric materials that support surface phonon polaritons. All of the studied materials, InP, GaAs, GaN, SiC, and α-Al2O3 (sapphire), exhibit quasimonochromatic thermal emission symbolized by strong peaks of evanescent modes at well-defined frequencies in the near field that correspond to the appropriate peaks in the density of states for surface phonon polaritons. It is also found that the materials with lower polariton frequencies (e.g., InP and GaAs) generally demonstrate a higher peak spectral energy density compared to those with higher frequencies (e.g., SiC). This trend is maintained over the entire range of temperature (300–600 K) and the distance from the surface ( ⩽ 10 μm) considered in the calculation. Thus, the results clearly indicate that among the studied materials InP and GaAs are the best candidates to provide the quasicoherent thermal emission for potential use as a nanoscale thermal source. The energy density stored in the evanescent peaks, when close to the surface, is estimated to be many orders of magnitude larger than that in the blackbody radiation.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Mq Elemental semiconductors
68.35.Ja Surface and interface dynamics and vibrations
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Enhanced mass sensitivity of stress-free, silicon nanowire-grown microcantilever sensors

Dongkyu Lee, Eun-Ha Kim, Myungsun Yoo, Namchul Jung, Kun-Hong Lee, and Sangmin Jeon

Appl. Phys. Lett. 90, 113107 (2007); http://dx.doi.org/10.1063/1.2713344 (3 pages) | Cited 5 times

Online Publication Date: 13 March 2007

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A thin catalytic layer of nickel was evaporated onto one side of silicon microcantilevers and amorphous silicon nanowires were synthesized on the nickel surface. When nanowire-grown cantilevers were exposed to mercaptohexanol vapor, their mass sensitivity was almost two orders of magnitude greater than that of the corresponding plain cantilever due to the increase in surface area afforded by the nanowires, whereas adsorption of mercaptohexanol induced negligible deflection of the nanowire-grown cantilevers. This indicates that the gold-coated nanowire-grown cantilever can be used as a sensitive, stress-free sensor whose spring constant is not affected by the adsorption of alkanethiols.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis

Formation of single crystalline ZnO nanotubes without catalysts and templates

Samuel L. Mensah, Vijaya K. Kayastha, Ilia N. Ivanov, David B. Geohegan, and Yoke Khin Yap

Appl. Phys. Lett. 90, 113108 (2007); http://dx.doi.org/10.1063/1.2714186 (3 pages) | Cited 31 times

Online Publication Date: 13 March 2007

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Oxide and nitride nanotubes have gained attention for their large surface areas, wide energy band gaps, and hydrophilic natures for various innovative applications. These nanotubes were either grown by templates or multistep processes with uncontrollable crystallinity. Here the authors show that single crystal ZnO nanotubes can be directly grown on planar substrates without using catalysts and templates. These results are guided by the theory of nucleation and the vapor-solid crystal growth mechanism, which is applicable for transforming other nanowires or nanorods into nanotubular structures.
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81.05.Dz II-VI semiconductors
81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.Fg Nanotubes

Negative magnetoresistance in fractal Pb thin films on Si(111)

Jian Wang, Xu-Cun Ma, Yun Qi, Ying-Shuang Fu, Shuai-Hua Ji, Li Lu, Jin-Feng Jia, and Qi-Kun Xue

Appl. Phys. Lett. 90, 113109 (2007); http://dx.doi.org/10.1063/1.2712511 (3 pages) | Cited 10 times

Online Publication Date: 13 March 2007

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Using a low temperature method, the authors have prepared atomically flat Pb ultrathin films on Si(111)-7×7 surface. Room temperature annealing of the films results in a percolation morphology with fractal vacancy islands where the Si substrate is exposed. The fractal film with a nominal thickness of 23 ML exhibits enhanced onset superconducting transition temperature of 7.0 K and negative magnetoresistance with wide magnetoresistance terrace under perpendicular magnetic field when the film is in superconducting state. They attribute the phenomena to the coexistence of two superconducting phases in this fractal film.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.25.F- Transport properties

Thickness dependent ion conductivity of lithium borate network glasses

F. Berkemeier, M. Shoar Abouzari, and G. Schmitz

Appl. Phys. Lett. 90, 113110 (2007); http://dx.doi.org/10.1063/1.2713138 (3 pages) | Cited 10 times

Online Publication Date: 13 March 2007

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Lithium borate network glasses are possible candidates for separator membranes in all-solid-state batteries. Thin films of a Li2O-borate glass were produced by argon beam sputtering and their specific ionic conductivities were measured by impedance spectroscopy. The conductivity of as-sputtered films is about two orders of magnitude higher compared to the conductivity of bulk glasses produced from the melt. Furthermore, thin films with a thickness of 7–125 nm reveal a remarkable finite size effect after annealing: with decreasing thickness the specific dc conductivity increases about three orders of magnitude.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
82.47.Aa Lithium-ion batteries
81.40.Gh Other heat and thermomechanical treatments

Nanoscale quantitative stress mapping with atomic force microscopy

Kerem Unal and H. Kumar Wickramasinghe

Appl. Phys. Lett. 90, 113111 (2007); http://dx.doi.org/10.1063/1.2712494 (3 pages) | Cited 4 times

Online Publication Date: 14 March 2007

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A nanometer scale noninvasive method for quantitatively mapping tensile strain in metals or semiconductors is demonstrated. The technique is based on the Kelvin probe force microscopy detection of changes in the electronic work function of a material resulting from the tensile strain. Measurements are quantified using a simple microlever mechanical system by recording changes in the work function as a function of the applied strain. A linear relationship of the work function on the tensile stress is observed with a stress sensitivity of 1 kPa. Finally, the stress distribution in a strained silicon membrane is imaged.
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07.10.Lw Balance systems, tensile machines, etc.
07.79.Lh Atomic force microscopes
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
73.30.+y Surface double layers, Schottky barriers, and work functions
68.37.Ps Atomic force microscopy (AFM)

Monodisperse spherical mesoporous Eu-doped TiO2 phosphor particles and the luminescence properties

Jianbo Yin, Liqin Xiang, and Xiaopeng Zhao

Appl. Phys. Lett. 90, 113112 (2007); http://dx.doi.org/10.1063/1.2712495 (3 pages) | Cited 28 times

Online Publication Date: 14 March 2007

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Monodisperse spherical and mesoporous Eu-doped TiO2 phosphor particles were prepared by nonionic surfactant-assisted soft-chemistry method. It is shown that the phosphor particles possess submicron diameter of about 250 nm and narrow size distribution. Under ultraviolet irradiation the particles show characteristic luminescence corresponding to 5D0-7Fj of Eu3+. Especially, the calcined particles consisted of mesopores and semicrystalline framework shows the strongest photoluminescence compared to the amorphous particles without annealing and the completely crystalline particles annealed at higher temperature. This is attributed to the energy transfer from titania nanocrystallite to Eu3+ ions dispersed in glassy amorphous titania region.
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78.55.Hx Other solid inorganic materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Gh Other heat and thermomechanical treatments
61.43.Gt Powders, porous materials

Heteroepitaxially enhanced magnetic anisotropy in BaTiO3–CoFe2O4 nanostructures

Haimei Zheng, Jens Kreisel, Ying-Hao Chu, R. Ramesh, and Lourdes Salamanca-Riba

Appl. Phys. Lett. 90, 113113 (2007); http://dx.doi.org/10.1063/1.2713131 (3 pages) | Cited 31 times

Online Publication Date: 14 March 2007

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The authors have studied the magnetic properties of BaTiO3–CoFe2O4 nanostructures, which were prepared using pulsed laser deposition. Such nanostructures show a large uniaxial magnetic anisotropy with an easy axis along the pillar long direction. As the growth temperature decreases, the magnetic anisotropy increases. Careful analyses reveal that heteroepitaxial strain is the primary contribution to the magnetic anisotropy.
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75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
75.80.+q Magnetomechanical effects, magnetostriction
61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology
75.50.Tt Fine-particle systems; nanocrystalline materials

Regular arrangement of nanoparticles from the gas phase on bacterial surface-protein layers

Ute Queitsch, Elias Mohn, Franziska Schäffel, Ludwig Schultz, Bernd Rellinghaus, Anja Blüher, and Michael Mertig

Appl. Phys. Lett. 90, 113114 (2007); http://dx.doi.org/10.1063/1.2713163 (3 pages) | Cited 13 times

Online Publication Date: 14 March 2007

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FePt nanoparticles from the gas phase are deposited onto the two-dimensional crystalline surface layer protein from the bacterium Bacillus sphaericus NCTC 9602. The potential of this protein layer to facilitate the ordered spatial arrangement of the otherwise statistically distributed nanoparticles on the substrate is studied. Transmission electron microscopy reveals the particles positions to be directed by the regular protein template.
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87.14.E- Proteins

Structure stability, fracture, and tuning mechanism of CdSe nanobelts

Zhongwu Wang, Ken Finkelstein, Chris Ma, and Zhong Lin Wang

Appl. Phys. Lett. 90, 113115 (2007); http://dx.doi.org/10.1063/1.2713172 (3 pages) | Cited 8 times

Online Publication Date: 14 March 2007

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High pressure synchrotron x-ray diffraction studies have been conducted to explore the structural stability, phase transformation, and resulting mechanisms of CdSe nanobelts. 25-nm-thick wurtzite CdSe nanobelts transform to a rocksalt structure with in situ fracture at 4.0 GPa; this is greater than the transition pressure of 2.5 GPa in bulk and 25 nm nanoparticle. Decompression results in the formation of wurtzite and sphalerite at 1.2 GPa. Total Gibbs free energy calculations demonstrate that the low surface energy ±{2math0} facets are fully responsible for the enhancement of structure stability. A strongest particle size for the rocksalt phase was determined ∼ 12 nm, providing a significant constraint for the fracture of nanobelts and size-tuned enhancement of mechanical properties.
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81.05.Dz II-VI semiconductors
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
62.50.-p High-pressure effects in solids and liquids
64.70.K- Solid-solid transitions
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Bamboolike carbon nitride nanotubes (C9N5H3): Atomic-scale construction, synthesis and lithium battery applications

Changzheng Wu, Xi Zhu, Chengle Wang, Hua Sheng, Jinlong Yang, and Yi Xie

Appl. Phys. Lett. 90, 113116 (2007); http://dx.doi.org/10.1063/1.2713227 (3 pages) | Cited 3 times

Online Publication Date: 14 March 2007

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The authors constructed the finite cluster model of bamboolike carbon nitride nanotubes taking the C9N5H3 as an example. As desired, the C9N5H3 bamboolike nanotubes were prepared in a facile solvent-free system. Both x-ray photoelectron microscopy and elemental analysis give its formula of C9N5H3, while the UV-vis and Fourier transform infrared results agree well with the theoretical predictions. Due to the existence of pore structure in this carbon nitride tube wall, the lithium battery experimental results exhibit a much higher irreversible and reversible capacity than that of the theoretical capacity of graphite (372 mA h g−1).
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81.07.De Nanotubes
61.46.Fg Nanotubes
78.67.Ch Nanotubes
79.60.Jv Interfaces; heterostructures; nanostructures
61.43.Gt Powders, porous materials
82.47.Aa Lithium-ion batteries

Synthesis and band gap of ZnO particles with hexagonal bilayer structure

Jianhui Zhang, Huaiyong Liu, Zhenlin Wang, and Naiben Ming

Appl. Phys. Lett. 90, 113117 (2007); http://dx.doi.org/10.1063/1.2713146 (3 pages) | Cited 6 times

Online Publication Date: 15 March 2007

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The unique water/PVP (polyvinylpyrrolidone)/n-pentanol interface has been developed to prepare the ZnO particles with hexagonal bilayer structure. By modifying the interface through varying the amount of PVP and water, one can readily tune the particle size and change the particle shape from hexagonal bilayer to capped potlike to hemispherical features. The study of the growth dynamics and extinction spectra suggests that the bilayer structure arises from the selective adsorption of PVP on the ZnO crystallographic planes. Both the photoluminescence and extinction spectra show that the band gap of the hexagonal bilayer ZnO particles shrinks with increasing particle size.
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81.05.Dz II-VI semiconductors
71.20.Nr Semiconductor compounds
78.55.Et II-VI semiconductors

Electrochemical grafting of octyltrichlorosilane monolayer on Si

S. P. Koiry, D. K. Aswal, Vibha Saxena, N. Padma, A. K. Chauhan, N. Joshi, S. K. Gupta, J. V. Yakhmi, D. Guerin, and D. Vuillaume

Appl. Phys. Lett. 90, 113118 (2007); http://dx.doi.org/10.1063/1.2713343 (3 pages) | Cited 5 times

Online Publication Date: 15 March 2007

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The octyltrichlorosilane (OTS) monolayer on hydrated Si (111) surfaces has been grafted by cyclic voltammetry (CV) using tetrabutylammonium perchlorate in dry methanol as supporting electrolyte. The percentage of OTS coverage, calculated from the current value at −1 V, after 30 CV scans was found to be >97%, which is independently confirmed by atomic force microscopy. A mechanism of electrochemical grafting of OTS on Si via formation of Si–Si bonds is proposed. Current-voltage characteristics and impedance spectroscopic measurements on Al/OTS/Si structures reveal realization of a true OTS/Si interface.
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81.20.-n Methods of materials synthesis and materials processing
82.45.Rr Electroanalytical chemistry
82.45.Mp Thin layers, films, monolayers, membranes

Shape and composition of buried PbSe quantum dots determined by scanning tunneling microscopy

G. Springholz, L. Abtin, and V. Holy

Appl. Phys. Lett. 90, 113119 (2007); http://dx.doi.org/10.1063/1.2713361 (3 pages) | Cited 3 times

Online Publication Date: 15 March 2007

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Capping of self-assembled semiconductor quantum dots usually alters their shape and composition due to alloying with the matrix material. To determine the structure of capped dots, a method is developed based on the analysis of surface displacements induced by buried dots measured by scanning tunneling microscopy. For self-assembled PbSe dots overgrown with PbTe layers, the buried dots are found to be highly truncated and extended in the lateral direction, and due to intermixing their composition is changed to PbSexTe1−x, with xSe of only 55%.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.35.Fx Diffusion; interface formation

Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)

Zh. M. Wang, B. L. Liang, K. A. Sablon, and G. J. Salamo

Appl. Phys. Lett. 90, 113120 (2007); http://dx.doi.org/10.1063/1.2713745 (3 pages) | Cited 45 times

Online Publication Date: 15 March 2007

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Self-assembled nanodrill technology based on droplet epitaxy growth was developed to obtain nanoholes on a GaAs(100) surface. In this technology, the gallium droplets act like “electrochemical drills” etching away the GaAs substrate beneath to give rise to nanoholes more than 10 nm deep. The driving force of the nanodrill is attributed to the arsenic desorption underneath the gallium droplet at high growth temperatures and Ga-rich condition. This nanodrill technology provides an easy and flexible method to fabricate nanohole templates on GaAs(100) surface and has great potential for developing quantum dots and quantum dot molecules for quantum computation applications.
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81.16.Dn Self-assembly
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.47.Fg Semiconductor surfaces
81.05.Ea III-V semiconductors
82.45.-h Electrochemistry and electrophoresis
81.65.-b Surface treatments

Experimental demonstration of bending and splitting of self-collimated beams in two-dimensional photonic crystals

Myeong-Woo Kim, Sun-Goo Lee, Teun-Teun Kim, Jae-Eun Kim, Hae Yong Park, and Chul-Sik Kee

Appl. Phys. Lett. 90, 113121 (2007); http://dx.doi.org/10.1063/1.2713859 (3 pages) | Cited 5 times

Online Publication Date: 15 March 2007

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The authors have experimentally demonstrated the bending and splitting phenomena of self-collimated microwave beams in a two-dimensional square lattice photonic crystal composed of alumina rods. The bending and splitting were achieved by introducing a line defect in the photonic crystal. The power ratio of two split beams can be controlled by varying the radii of rods in the line defect.
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42.70.Qs Photonic bandgap materials
41.20.Jb Electromagnetic wave propagation; radiowave propagation
84.40.-x Radiowave and microwave (including millimeter wave) technology
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