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12 Mar 2007

Volume 90, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 113108 (2007); http://dx.doi.org/10.1063/1.2714186 (3 pages)

Samuel L. Mensah, Vijaya K. Kayastha, Ilia N. Ivanov, David B. Geohegan, and Yoke Khin Yap
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Ultrafast plasma shutter for shielding high-energy ions from a laser-produced plasma

H. Yashiro and T. Tomie

Appl. Phys. Lett. 90, 111501 (2007); http://dx.doi.org/10.1063/1.2714095 (3 pages)

Online Publication Date: 12 March 2007

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A laser-produced plasma was employed as an ultrafast shutter for shielding high-energy ions. Fast ions with energy on the order of keV were prevented from reaching the detector by a shutter plasma. The ion signal was suppressed to 1% of the unshielded peak ion signal. Suppression of the ion signal was observed up to 10 mm from the target surface of the shutter plasma. The shutter closing time was 40 ns at the distance of 2 mm. The plasma shutter could operate even at a 100 kHz repetition rate. The high-density plasma acts as a shutter by capturing a low-density plasma.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Radio-frequency dielectric-barrier glow discharges in atmospheric argon

J. J. Shi and M. G. Kong

Appl. Phys. Lett. 90, 111502 (2007); http://dx.doi.org/10.1063/1.2713141 (3 pages) | Cited 12 times

Online Publication Date: 15 March 2007

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In this letter, an experimental investigation is presented to characterize the properties and benefits of radio-frequency (rf) dielectric-barrier discharges (DBDs) in atmospheric argon. Compared to rf atmospheric glow discharges generated with bare electrodes, atmospheric argon rf DBDs are shown to remain stable and uniform over a large current range from the α and the γ modes. Optical emission spectroscopy is used to show an active underpinning plasma chemistry and a gas temperature range of 461–562 K. These highlight the advantages of argon rf DBD as a surface processing technique over more expensive helium-based rf atmospheric glow discharges.
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52.80.Pi High-frequency and RF discharges
52.80.Hc Glow; corona
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)

Observation of temporal behavior of the emission frequency from an ultrashort, high-power, and compact millimeter-wave source

Takeshi Higashiguchi, Nobuo Ohata, Kun Li, and Noboru Yugami

Appl. Phys. Lett. 90, 111503 (2007); http://dx.doi.org/10.1063/1.2713130 (3 pages) | Cited 3 times

Online Publication Date: 16 March 2007

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The authors demonstrated observation of emission frequency chirping of millimeter-wave emission from a time-varying plasma produced by a nanosecond UV laser pulse. By using a heterodyne interferometer the time-resolved frequency of the emission from a dc to ac radiation converter source was observed to range from 20 to 32 GHz due to the rapid plasma creation. This chirped pulse is suitable for application in various novel dense plasma diagnostics.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Dg Plasma sources
52.70.Gw Radio-frequency and microwave measurements
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Effect of enhanced C2 growth chemistry on nanodiamond film deposition

Kungen Teii and Tomohiro Ikeda

Appl. Phys. Lett. 90, 111504 (2007); http://dx.doi.org/10.1063/1.2713334 (3 pages) | Cited 13 times

Online Publication Date: 16 March 2007

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A route to high-purity nanocrystalline diamond films from C2 dimers and related mechanisms have been investigated by enhancing C2 growth chemistry in Ar-rich microwave plasmas. Efficient C2 production by direct dissociation from acetylene causes the micro- to nanocrystal transition with a low threshold Ar concentration of ∼ 70% and produces films of ∼ 20 nm grains with a distinct visible-Raman peak of diamond. C2 grows nanodiamond on diamond surfaces but rarely initiates nucleation on foreign surfaces. The phase purity can be improved by increasing the dominance of nanodiamond growth from C2 over nondiamond growth from CHx(x = 0–3) and large radicals.
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81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.Bc Nanocrystalline materials
52.77.Dq Plasma-based ion implantation and deposition
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
78.66.Db Elemental semiconductors and insulators
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