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19 Mar 2007

Volume 90, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 90, 123101 (2007); http://dx.doi.org/10.1063/1.2716242 (3 pages)

G. Z. Shen, Y. Bando, J. Q. Hu, and D. Golberg
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Effects of plasma immersion ion nitridation on dielectric properties of HfO2

L. Wang, K. Xue, J. B. Xu, A. P. Huang, and Paul K. Chu

Appl. Phys. Lett. 90, 122901 (2007); http://dx.doi.org/10.1063/1.2715044 (3 pages) | Cited 9 times

Online Publication Date: 20 March 2007

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Plasma immersion ion nitridation is used to produce thin HfO2 films with improved thermal and electrical properties. The film composition is investigated by examining the chemical shifts of the Hf 4f, Si 2p, and N 1s core-level spectra using x-ray photoelectron spectroscopy. The improved thermal stability and interfacial microstructure are further confirmed by high-resolution cross-sectional transmission electron microscopy. Electrical studies show an equivalent oxide thickness of about 1.25 nm, a negligible hysteresis of about 5 mV, and a low fixed charge density.
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81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
52.77.-j Plasma applications
77.55.-g Dielectric thin films
76.60.Cq Chemical and Knight shifts
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Interface dominated biferroic La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 epitaxial superlattices

Ayan Roy Chaudhuri, R. Ranjith, S. B. Krupanidhi, R. V. K. Mangalam, and A. Sundaresan

Appl. Phys. Lett. 90, 122902 (2007); http://dx.doi.org/10.1063/1.2715110 (3 pages) | Cited 19 times

Online Publication Date: 20 March 2007

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Superlattices composed of ferromagnetic La0.6Sr0.4MnO3 and ferroelectric 0.7Pb(Mg1/3Nb2/3)O3–0.3(PbTiO3) layers were fabricated on (100) LaAlO3 substrates by pulsed laser deposition technique. The ferromagnetic and frequency independent ferroelectric hysteresis characteristics established the biferroic nature of the superlattices. Influence of magnetic field was observed in tuning the P-E characteristics of the superlattices. A similar effect was observed on application of a high dc electric field to the samples. The nature of the observed ferroelectric properties and their modulation by applied magnetic and electric fields were thus discussed in connection to the ferroelectric/ferromagnetic interfaces.
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75.80.+q Magnetomechanical effects, magnetostriction
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
77.80.Dj Domain structure; hysteresis
75.50.Dd Nonmetallic ferromagnetic materials
81.15.Fg Pulsed laser ablation deposition

Direct evidence of an order-disorder nature of ferroelectric phase transitions in K2MgWO2(PO4)2

Mirosław Maczka, Jerzy Hanuza, Andrzej Majchrowski, and Seiji Kojima

Appl. Phys. Lett. 90, 122903 (2007); http://dx.doi.org/10.1063/1.2713873 (3 pages) | Cited 4 times

Online Publication Date: 21 March 2007

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K2MgWO2(PO4)2 single crystal, related to famous optical nonlinear material KTiOPO4, was investigated by micro-Brillouin scattering with a focus on the central components of the relaxation modes. A critical slowing down has been clearly observed in the vicinity of T1 = 436 K while suppressed by the coupling with the order parameter. The temperature dependence of the relaxation time indicates that the former transition is the second order, while the latter is strongly first order. The obtained results show that disorder processes in the sublattice of potassium ions play a major role in the mechanism of these phase transitions.
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77.80.B- Phase transitions and Curie point
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
64.70.K- Solid-solid transitions
78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.70.-a Optical materials

Nanoscale polarization manipulation and imaging of ferroelectric Langmuir-Blodgett polymer films

Brian J. Rodriguez, Stephen Jesse, Sergei V. Kalinin, Jihee Kim, Stephen Ducharme, and V. M. Fridkin

Appl. Phys. Lett. 90, 122904 (2007); http://dx.doi.org/10.1063/1.2715102 (3 pages) | Cited 36 times

Online Publication Date: 22 March 2007

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Piezoresponse force microscopy has been used to manipulate and image polarization of ferroelectric polymer Langmuir-Blodgett films at the nanoscale, achieving polarization control with a resolution below 50 nm and imaging resolution below 5 nm. Individual regions showed square polarization-voltage hysteresis loops, demonstrating bistability of the polarization state. Arbitrary polarization patterns could be repeatedly written and erased with a resolution of 25 to 50 nm, limited by grain size, demonstrating the potential for high-density data storage and retrieval at densities exceeding 250 Gbits/in2.
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77.84.Jd Polymers; organic compounds
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
85.50.Gk Non-volatile ferroelectric memories
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces

Electrical characteristics and interface structure of HfAlO/SiON/Si(001) stacks

V. Edon, Z. Li, M.-C. Hugon, B. Agius, C. Krug, I. J. R. Baumvol, O. Durand, and C. Eypert

Appl. Phys. Lett. 90, 122905 (2007); http://dx.doi.org/10.1063/1.2715112 (3 pages) | Cited 7 times

Online Publication Date: 22 March 2007

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The electrical characteristics of RuO2/HfAlO/SiON/Si(001) capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67 mA/cm2 for an equivalent oxide thickness of 1.1 nm have been determined, whereas non-nitrided capacitors gave substantially lower dielectric constant and higher gate current density. The structure and integrity of the stacks after thermal annealing were accessed by means of spectroscopic ellipsometry and x-ray reflectometry, indicating that thermal N incorporation into the gate dielectric stacks forms an effective diffusion barrier, leading to a smoother, SiO2-like interface. The HfAlO films grown on nitrided substrates were seen also to have lower porosity, percentage of voids, and density of oxygen vacancies.
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84.32.Tt Capacitors
73.40.Rw Metal-insulator-metal structures
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