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19 Mar 2007

Volume 90, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 90, 123101 (2007); http://dx.doi.org/10.1063/1.2716242 (3 pages)

G. Z. Shen, Y. Bando, J. Q. Hu, and D. Golberg
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c-axis correlated pinning behavior near the irreversibility fields

Satoshi Awaji, Masafumi Namba, Kazuo Watanabe, Masashi Miura, Yutaka Yoshida, Yusuke Ichino, Yoshiaki Takai, and Kaname Matsumoto

Appl. Phys. Lett. 90, 122501 (2007); http://dx.doi.org/10.1063/1.2715000 (3 pages) | Cited 11 times

Online Publication Date: 20 March 2007

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The authors found that the peak at the parallel external field (B‖c) to the c axis in the angular dependence of Jc shrinks and almost disappears with increasing a magnetic field but it grows again with further increasing of a magnetic field at various temperatures for high-Jc Sm1+xBa2−xCu3Oy films. These behaviors can be explained by the flux pinning properties of the interstitial vortices, which locate in between the vortices pinned by the c-axis correlated disorders. From the obtained experimental results, the collective correlated pinned glass state is proposed in a high field region in the vortex glass states.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents
74.72.-h Cuprate superconductors

Effect of processing temperature on high field critical current density and upper critical field of nanocarbon doped MgB2

W. K. Yeoh, J. Horvat, J. H. Kim, X. Xu, and S. X. Dou

Appl. Phys. Lett. 90, 122502 (2007); http://dx.doi.org/10.1063/1.2715026 (3 pages) | Cited 21 times

Online Publication Date: 20 March 2007

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Correlation of upper critical field (Hc2) and critical current density (Jc) with processing temperature of nano-C doped MgB2 has been studied in comparison to SiC and pure MgB2. SiC and C doped MgB2 exhibit opposite trends in the dependence of Jc and Hc2 on sintering temperature. This is explained by different reactivities of carbon available upon creation of MgB2 for the two types of doping. Nanocarbon doped MgB2 requires sintering temperatures in excess of 900 °C to obtain high boron substitution for carbon, enhancing the vortex pinning and impurity scattering of charge carriers. However, carbon substitution in nano-SiC doped MgB2 occurs at less than 650 °C, allowing lower sintering temperature and high degree of carbon substitution. Both pure and SiC doped MgB2 benefit from low sintering temperature, which results in more grain boundary defects. Substantial carbon substitution can compensate for the disadvantage of sintering at high temperature of nano-C doped MgB2, giving the best Jc of 4.8×103 A/cm2 at 4.5 K and 12 T. This is comparable to the low-temperature sintered nano-SiC doped MgB2 wires.
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74.25.Sv Critical currents
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
61.72.up Other materials
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
61.72.Mm Grain and twin boundaries

Properties of Ga1−xMnxAs with high Mn composition (x>0.1)

D. Chiba, Y. Nishitani, F. Matsukura, and H. Ohno

Appl. Phys. Lett. 90, 122503 (2007); http://dx.doi.org/10.1063/1.2715095 (3 pages) | Cited 35 times

Online Publication Date: 20 March 2007

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A series of Ga1−xMnxAs layers with high Mn compositions x ( = 0.075–0.200) has been grown and investigated. Magnetization, magnetotransport, and magneto-optical properties reveal that the layers have single ferromagnetic phase as in the case of typical (Ga,Mn)As. The authors also describe the variation of magnetic anisotropy with x and the effect of low temperature annealing on Curie temperature.
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75.50.Pp Magnetic semiconductors
72.80.Ey III-V and II-VI semiconductors
75.50.Ee Antiferromagnetics
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Gw Magnetic anisotropy
78.20.Ls Magneto-optical effects
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