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26 Mar 2007

Volume 90, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 134101 (2007); http://dx.doi.org/10.1063/1.2679209 (3 pages)

S. Srinivasan, J. Hiller, B. Kabius, and O. Auciello
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Three-dimensional nanoscale subsurface optical imaging of silicon circuits

E. Ramsay, K. A. Serrels, M. J. Thomson, A. J. Waddie, M. R. Taghizadeh, R. J. Warburton, and D. T. Reid

Appl. Phys. Lett. 90, 131101 (2007); http://dx.doi.org/10.1063/1.2716344 (3 pages) | Cited 17 times

Online Publication Date: 26 March 2007

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Three-dimensional subsurface imaging through the back side of a silicon flip chip is reported with a diffraction-limited lateral resolution of 166 nm and an axial performance capable of resolving features only 100 nm deep. This performance was achieved by implementing sample-scanned two-photon optical beam induced current microscopy using a silicon solid immersion lens and a peak detection algorithm. The excitation source was a 1530 nm erbium:fiber laser, and the lateral optical resolution obtained corresponds to 11% of the free-space wavelength.
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07.60.Pb Conventional optical microscopes
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Er:Yb-doped oxyfluoride silicate glass waveguide amplifier fabricated using femtosecond laser inscription

N. D. Psaila, R. R. Thomson, H. T. Bookey, A. K. Kar, N. Chiodo, R. Osellame, G. Cerullo, A. Jha, and S. Shen

Appl. Phys. Lett. 90, 131102 (2007); http://dx.doi.org/10.1063/1.2716866 (3 pages) | Cited 34 times

Online Publication Date: 26 March 2007

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The authors report net gain from a channel waveguide fabricated in an Er:Yb-doped oxyfluoride silicate glass substrate using femtosecond laser waveguide inscription. To fabricate waveguides exhibiting low propagation and coupling losses, they used the recently demonstrated multiscan technique that allows the waveguide cross section and refractive index contrast to be controlled independently of each other. By doing so, the best waveguide exhibited a total background insertion loss, excluding absorption, of only 1.2 dB at 1537 nm. As a result, a fiber-fiber net gain of 0.72 dB at 1537 nm was measured for a 10 mm long waveguide.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Simple voltage tunable liquid crystal laser

L. M. Blinov, G. Cipparrone, A. Mazzulla, P. Pagliusi, V. V. Lazarev, and S. P. Palto

Appl. Phys. Lett. 90, 131103 (2007); http://dx.doi.org/10.1063/1.2717083 (3 pages) | Cited 6 times

Online Publication Date: 27 March 2007

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Lasing has been observed in a dye-doped liquid crystal placed between one substrate with a large transparent electrode and the other with a system of parallel nontransparent electrode stripes of 15 μm period. The stripes operate as a shadow mask providing the spatial modulation of the pump beam and material gain and, with the voltage applied, it additionally creates a Bragg resonator structure due to the spatial modulation of refraction. With that simple cell, a voltage induced tuning of the spectral positions of laser lines over 25 nm has been demonstrated.
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42.55.-f Lasers
42.70.Hj Laser materials
61.30.-v Liquid crystals
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Improved organic semiconductor lasers based on a mixed-order distributed feedback resonator design

C. Karnutsch, C. Pflumm, G. Heliotis, J. C. deMello, D. D. C. Bradley, J. Wang, T. Weimann, V. Haug, C. Gärtner, and U. Lemmer

Appl. Phys. Lett. 90, 131104 (2007); http://dx.doi.org/10.1063/1.2717518 (3 pages) | Cited 35 times

Online Publication Date: 27 March 2007

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The authors present organic semiconductor distributed feedback lasers based on thin films of the conjugated polymer poly[9,9-dioctylfluorene-co-9,9-di(4-methoxy-phenyl)fluorene] and employing an improved resonator design. In order to combine the advantages of first- and second-order distributed feedback resonators, the authors utilize a mixed-order grating design: A second-order Bragg scattering region that provides efficient vertical outcoupling of the laser radiation is surrounded by first-order scattering regions that give rise to strong feedback. By optimizing the film thickness to obtain laser oscillation at the polymer maximum gain wavelength, a very low laser threshold of 45 pJ/pulse ( ≈ 36 nJ/cm2) was realized with this resonator concept.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Near-diffraction-limited passively Q-switched Yb:Y3Al5O12 ceramic lasers with peak power >150 kW

Jun Dong, Akira Shirakawa, Ken-ichi Ueda, Hideki Yagi, Takagimi Yanagitani, and Alexander A. Kaminskii

Appl. Phys. Lett. 90, 131105 (2007); http://dx.doi.org/10.1063/1.2717519 (3 pages) | Cited 5 times

Online Publication Date: 27 March 2007

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Laser-diode pumped nearly diffraction-limited beam quality (M2<1.05), high peak power, subnanosecond passively Q-switched Yb:Y3Al5O12 ceramic miniature laser with Cr4+:Y3Al5O12 ceramic as saturable absorber has been achieved. The slope efficiency is as high as 36% for 80% initial transmission of Cr4+:Y3Al5O12 ceramic. The pulse width of 335 ps and peak power of over 150 kW at repetition rate of 5 kHz were obtained. Laser oscillates at single-longitudinal-mode oscillation and wide-separated multilongitudinal-mode oscillation due to the combined etalon effect of the Cr4+:YAG thin plate and thin glass plate as output coupler.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Gn Optical waveguides and couplers

Improving spatial resolution of two-photon microfabrication by using photoinitiator with high initiating efficiency

Jin-Feng Xing, Xian-Zi Dong, Wei-Qiang Chen, Xuan-Ming Duan, Nobuyuki Takeyasu, Takuo Tanaka, and Satoshi Kawata

Appl. Phys. Lett. 90, 131106 (2007); http://dx.doi.org/10.1063/1.2717532 (3 pages) | Cited 38 times

Online Publication Date: 27 March 2007

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The lateral spatial resolution (LSR) in two-photon induced polymerization was improved to 80 nm by using an anthracene derivative (9,10-bis-pentyloxy-2,7-bis[2-(4-dimethylamino-phenyl)-vinyl]anthracene (BPDPA)) as a highly sensitive and efficient photoinitiator. Photocurable resin containing 0.18 mol % BPDPA exhibited a low polymerization threshold of 0.64 mW at 800 nm. Theoretical calculations showed that the LSR can be increased by reducing the laser power, indicating that the LSR could be improved using more sensitive initiators in the future.
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81.16.-c Methods of micro- and nanofabrication and processing
82.35.-x Polymers: properties; reactions; polymerization

Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

T. V. Cuong, H. S. Cheong, H. G. Kim, H. Y. Kim, C.-H. Hong, E. K. Suh, H. K. Cho, and B. H. Kong

Appl. Phys. Lett. 90, 131107 (2007); http://dx.doi.org/10.1063/1.2714203 (3 pages) | Cited 37 times

Online Publication Date: 28 March 2007

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The authors have demonstrated an effective method to obtain high light output power of GaN-based light-emitting diodes (LEDs) by simultaneous enhancement of internal quantum efficiency and light extraction efficiency. Micropit InGaN/GaN LEDs were fabricated on hexagonal-shaped GaN template through wet-etched substrate patterning. The result indicated that under optimized growth condition of high temperature GaN template, micropits could be formed and distributed in an aligned manner by growing on wet-etch patterned sapphire substrate. The LED structures showed superior optical output power, which directly resulted from not only effective elimination of threading dislocation of the epitaxial layers but also significant increase in light extraction efficiency via the inclined facets of aligned micropits.
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85.60.Jb Light-emitting devices
81.65.Cf Surface cleaning, etching, patterning

Single-shot characterization of independent femtosecond extreme ultraviolet free electron and infrared laser pulses

P. Radcliffe, S. Düsterer, A. Azima, H. Redlin, J. Feldhaus, J. Dardis, K. Kavanagh, H. Luna, J. Pedregosa Gutierrez, P. Yeates, E. T. Kennedy, J. T. Costello, A. Delserieys, C. L. S. Lewis, R. Taïeb, et al.

Appl. Phys. Lett. 90, 131108 (2007); http://dx.doi.org/10.1063/1.2716360 (3 pages) | Cited 27 times

Online Publication Date: 28 March 2007

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Two-color above threshold ionization of helium and xenon has been used to analyze the synchronization between individual pulses of the femtosecond extreme ultraviolet (XUV) free electron laser in Hamburg and an independent intense 120 fs mode-locked Ti:sapphire laser. Characteristic sidebands appear in the photoelectron spectra when the two pulses overlap spatially and temporally. The cross-correlation curve points to a 250 fs rms jitter between the two sources at the experiment. A more precise determination of the temporal fluctuation between the XUV and infrared pulses is obtained through the analysis of the single-shot sideband intensities.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
41.60.Cr Free-electron lasers

Length characterization of DNA-wrapped carbon nanotubes using Raman spectroscopy

S. G. Chou, H. Son, J. Kong, A. Jorio, R. Saito, M. Zheng, G. Dresselhaus, and M. S. Dresselhaus

Appl. Phys. Lett. 90, 131109 (2007); http://dx.doi.org/10.1063/1.2713121 (3 pages) | Cited 10 times

Online Publication Date: 29 March 2007

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A systematic resonance Raman study has been carried out on DNA-wrapped single walled carbon nanotubes (SWCNTs) of three different average lengths 〈Ltube〉 using seven different values of laser excitation energy Elaser. The dependence of the intensity ratio of the D-band and G-band Raman features (ID/IG) on 〈Ltube〉 indicates that nanotube length can be used as an important structural parameter for Raman characterization. By systematically varying Elaser, the ratio ID/IG is found to be much stronger for metallic than for semiconducting SWCNTs but appears to have the same functional dependence on Elaser and 〈Ltube〉 or crystallite size as does nanographite.
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78.67.Ch Nanotubes
78.30.Na Fullerenes and related materials
61.46.Fg Nanotubes

Improved surface and structural properties of InAs/GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces

X. B. Zhang, J. H. Ryou, R. D. Dupuis, C. Xu, S. Mou, A. Petschke, K. C. Hsieh, and S. L. Chuang

Appl. Phys. Lett. 90, 131110 (2007); http://dx.doi.org/10.1063/1.2717524 (3 pages) | Cited 8 times

Online Publication Date: 29 March 2007

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InAs/GaSb type-II superlattices (SLs) were grown on (001) GaSb substrates by metal organic chemical vapor deposition. Besides the expected tensile stress introduced by the InAs layers in the SLs, additional tensile stress is found in the InAs/GaSb SLs from the simulation of x-ray diffraction (XRD) curves of the SLs. High-resolution transmission electron microscopy and XRD of the SLs grown with different interface gas switching procedures suggest that the additional tensile stress is mainly located at the GaSb→InAs interface. To compensate for the tensile stress in the SL structures, we show that introducing ∼ 2-ML-thick InAs0.8Sb0.2 layer at the interfaces of the SL improves the morphology and the structural properties of the SLs significantly.
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68.65.Cd Superlattices
68.47.Fg Semiconductor surfaces
68.35.Ct Interface structure and roughness
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Laser-induced fluorescence within subwavelength metallic arrays of nanoholes indicating minimal dependence on hole periodicity

Je Hong Kim and Patrick J. Moyer

Appl. Phys. Lett. 90, 131111 (2007); http://dx.doi.org/10.1063/1.2713771 (3 pages) | Cited 10 times

Online Publication Date: 29 March 2007

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Fluorescence measurements are obtained in transmission from a thin film of rhodamine 6G molecules immersed into a 40 nm thick polymethylmethacrylate film, which has been spin coated onto an array of nanoholes in a thin gold film. The fluorescence is shown to be minimally correlated to the white light spectra of the same films and not highly dependent upon film periodicity, but rather highly dependent upon hole size and shape. The authors suggest that the spectroscopic signature originates from a determination of the allowed modes inside of the hole, which are recognized by the excited state molecular fluorophore before the radiative field is generated.
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78.66.Qn Polymers; organic compounds
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.60.-b Other luminescence and radiative recombination

High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

H. Lim, S. Tsao, W. Zhang, and M. Razeghi

Appl. Phys. Lett. 90, 131112 (2007); http://dx.doi.org/10.1063/1.2719160 (3 pages) | Cited 54 times

Online Publication Date: 29 March 2007

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The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8×1011 cm Hz1/2/W at 120 K and a bias of −5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7×107 cm Hz1/2/W.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass

M. Hughes, W. Yang, and D. Hewak

Appl. Phys. Lett. 90, 131113 (2007); http://dx.doi.org/10.1063/1.2718486 (3 pages) | Cited 25 times

Online Publication Date: 30 March 2007

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The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization of the waveguides, they have proposed a formation mechanism and provide comparisons to previous work. Tunneling has been identified as the dominant nonlinear absorption mechanism in the formation of the waveguides. Single mode guidance at 633 nm has been demonstrated. The writing parameters for the minimum propagation loss of 1.47 dB/cm are 0.36 μJ pulse energy and 50 μm/s scanning speed.
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42.62.-b Laser applications
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Ce Glasses, quartz
42.79.Gn Optical waveguides and couplers

Subsurface probing of terahertz particle plasmons

K. J. Chau, K. M. Rieckmann, and A. Y. Elezzabi

Appl. Phys. Lett. 90, 131114 (2007); http://dx.doi.org/10.1063/1.2718504 (3 pages) | Cited 3 times

Online Publication Date: 30 March 2007

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Here, the authors exploit the potential barrier at the interface between dissimilar metals to probe frequency dependent subsurface charge induction on metallic microparticles excited with terahertz radiation. The authors’ experimental data and model show that terahertz electromagnetic charge induction on the microparticles occurs over a distance comparable to the skin depth. This work provides a technique to probe subsurface terahertz charge induction in subwavelength metallic structures and may open research avenues of low-frequency plasmonic behavior.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.70.Gq Microwave and radio-frequency interactions

Excitonic ultraviolet lasing in ZnO-based light emitting devices

Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim

Appl. Phys. Lett. 90, 131115 (2007); http://dx.doi.org/10.1063/1.2718516 (3 pages) | Cited 62 times

Online Publication Date: 30 March 2007

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The authors have fabricated ultraviolet (UV) laser diodes based on ZnO/BeZnO films. The devices have p-n heterojunction structures with a multiple quantum well (MQW) active layer sandwiched between guide-confinement layers. The MQW active layer comprises undoped ZnO and BeZnO, while the two guide-confinement layers were As-doped p-type ZnO/BeZnO and Ga-doped n-type BeZnO/ZnO films, respectively. The exciton binding energy in the MQW region is exceptionally large (263 meV). Exciton-related lasing was observed by optically pumping the MQWs. ZnO/BeZnO-based diodes showed laser action by current injection at room temperature. The lasing mechanism is inelastic exciton-exciton collision.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
71.35.-y Excitons and related phenomena

Intense ultraviolet emission from Tb3+ and Yb3+ codoped glass ceramic containing CaF2 nanocrystals

Lihui Huang, Tatsuya Yamashita, Rajan Jose, Yusuke Arai, Takenobu Suzuki, and Yasutake Ohishi

Appl. Phys. Lett. 90, 131116 (2007); http://dx.doi.org/10.1063/1.2719028 (3 pages) | Cited 26 times

Online Publication Date: 30 March 2007

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A transparent Tb3+ and Yb3+ codoped oxyfluoride glass ceramic containing CaF2 nanocrystals was developed. This glass ceramic showed an intense ultraviolet emission at 381 nm due to the 5G6, 5D3→7F6 transitions of Tb3+ ion when excited with a 974 nm laser at room temperature. The observed intense ultraviolet emission could be attributed to the change of ligand field of Tb3+ and Yb3+ ions due to the incorporation of some Tb3+ and Yb3+ ions into CaF2 nanocrystals, and the resulting increased branching ratio of the transitions and longer lifetime of 5D4 level of Tb3+ in the glass ceramic.
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78.55.Hx Other solid inorganic materials
71.70.Ch Crystal and ligand fields
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Distinction between nonthermal plasma and thermal desorptions for NOx and CO2

Keiichiro Yoshida, Masaaki Okubo, and Toshiaki Yamamoto

Appl. Phys. Lett. 90, 131501 (2007); http://dx.doi.org/10.1063/1.2716210 (3 pages) | Cited 4 times

Online Publication Date: 26 March 2007

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Nonthermal plasma (NTP) desorption is used in NOx aftertreatment systems for diesel engine exhaust gas. The authors conducted desorption experiments for both NTP and thermal desorptions under similar conditions and electric power levels. The results confirm that NO, NO2, and CO2 are desorbed by the NTP at lower gas temperatures, while the total amount of desorbed gas is nearly the same for both the processes. Moreover, the amount of NO2 for the NTP desorption is greater than that for the thermal desorption. The desorption of CO2 by the NTP is more significant and rapid than that by the thermal desorption.
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89.20.Kk Engineering
68.43.Vx Thermal desorption

Investigation of dielectric barrier discharge dependence on permittivity of barrier materials

Ruixing Li, Qing Tang, Shu Yin, and Tsugio Sato

Appl. Phys. Lett. 90, 131502 (2007); http://dx.doi.org/10.1063/1.2716848 (3 pages) | Cited 5 times

Online Publication Date: 26 March 2007

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It has been evidenced by both theory and experiments that a barrier possessing a high permittivity can create a high energy for dielectric barrier discharge. However, this argument was challenged by the recent experiments of the authors. They found an optimum permittivity value to generate denser and stronger microdischarges, as well as a high reactivity of destruction CO2 in the entire gap space for plasma chemistry. When the barrier permittivity was higher than this optimum value, the microdischarges became sparser and even extinguished since the large number of charges resulted from higher permittivity accumulated on the dielectric surface to reduce the electric field.
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52.80.-s Electric discharges
52.50.Dg Plasma sources
52.25.Mq Dielectric properties
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Dependence of ion sheath collapse on secondary electron emission in plasma immersion ion implantation

Dixon T. K. Kwok, Shihao Pu, Ricky K. Y. Fu, Fanya Jin, and Paul K. Chu

Appl. Phys. Lett. 90, 131503 (2007); http://dx.doi.org/10.1063/1.2717082 (3 pages) | Cited 4 times

Online Publication Date: 26 March 2007

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The collapse of the ion sheath in front of a dielectric substrate during argon plasma immersion ion implantation is investigated using a Langmuir probe. The probe signals during the buildup and collapse of the ion sheath are recorded from a lime glass substrate with a magnesium metal plate placed on top. The collapsing speed of the ion sheath is shown to strongly depend on the secondary electron emission coefficient of the substrate. The authors’ results show that it is possible to derive secondary electron emission coefficients from insulating materials based on the probe signals.
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52.40.Kh Plasma sheaths
52.77.Dq Plasma-based ion implantation and deposition
52.40.Hf Plasma-material interactions; boundary layer effects
52.70.Ds Electric and magnetic measurements
52.25.Tx Emission, absorption, and scattering of particles

Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition

Michael Seman, Joshua J. Robbins, Sumit Agarwal, and Colin A. Wolden

Appl. Phys. Lett. 90, 131504 (2007); http://dx.doi.org/10.1063/1.2716310 (3 pages) | Cited 10 times

Online Publication Date: 29 March 2007

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Ta2O5 thin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of O2 and the metal precursor. By appropriately controlling the gas-phase environment self-limiting deposition at controllable rates ( ∼ 1 Å/pulse) was obtained. The process was insensitive to substrate temperature, with a constant deposition rate observed from 90 to 350 °C. As-deposited Ta2O5 films under these conditions displayed good dielectric properties. Performance improvements correlate strongly with film density and composition as measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy. Pulsed PECVD eliminates the need for gas actuation and inert purge steps required by atomic layer deposition.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
68.55.A- Nucleation and growth
78.30.Hv Other nonmetallic inorganics

Switching characteristics of microplasmas in a planar electrode gap

Hasibur Rahaman, Byung-Joon Lee, Isfried Petzenhauser, Klaus Frank, Jürgen Urban, and Robert Stark

Appl. Phys. Lett. 90, 131505 (2007); http://dx.doi.org/10.1063/1.2718490 (3 pages) | Cited 2 times

Online Publication Date: 30 March 2007

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Microplasmas at high pressure have been the authors’ special interest for its practical relevance to the development of a switch. They concentrated on repetitive switching with a possibility to exceed the up to now known values for plasma closing switches and simultaneously maintaining a subnanosecond rise time of the switched pulses at a load. They examined several parameters for this purpose such as the electrode gap spacing, the electrode geometry, the gas type, the gas pressure, and including the applied voltage and current rating to operate these plasmas.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.50.Dg Plasma sources
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
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Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon

S. Ruffell, J. E. Bradby, and J. S. Williams

Appl. Phys. Lett. 90, 131901 (2007); http://dx.doi.org/10.1063/1.2716854 (3 pages) | Cited 9 times

Online Publication Date: 26 March 2007

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Transformation kinetics of nanoindented zones in silicon containing high pressure crystalline phases (Si III and Si XII) during annealing (100 °C<T<450 °C) have been studied using Raman microspectroscopy and cross-sectional transmission electron microscopy. Signature peaks associated with Si III/XII in the Raman spectra were monitored to track the annealing of these phases to polycrystalline Si I as a function of annealing time and temperature. An overall activation energy for this transformation was found to be 0.67 eV. During annealing, Si XII disappeared faster than Si III, suggesting either that Si XII first converts to Si III or that Si XII transforms to polycrystalline Si I faster than Si III.
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64.70.K- Solid-solid transitions
61.72.Cc Kinetics of defect formation and annealing
62.50.-p High-pressure effects in solids and liquids
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
78.30.Hv Other nonmetallic inorganics

Ultrasonic attenuation properties of glassy alloys in views of complex viscoelasticity

Mikio Fukuhara, Wei Zhang, Dmitri V. Louzguine-Luzgin, Akihisa Inoue, and Nobuyuki Nishiyama

Appl. Phys. Lett. 90, 131902 (2007); http://dx.doi.org/10.1063/1.2716862 (3 pages) | Cited 3 times

Online Publication Date: 26 March 2007

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Using ultrasonics, acoustic attenuation characteristics of Pd40Cu30P20Ni10, Zr65Pd12.5Ni10Al7.5Cu5, Cu55Zr30Ti10Pd5, and Ti41.5Cu47.5Ni7.5Hf5Zr2.5Sn1 glassy alloys were examined in comparison with crystalline metals based on complex viscoelasticity. The glassy alloys favor to absorb the longitudinal one, but crystalline materials absorb the shear one, associated with periodicity and randomness of energy potentials, respectively. In sharp contrast to crystalline materials, Nyquist [Bell Syst. Tech. J. 11, 126 (1932) ] diagrams of the glassy alloys are characterized by large areas of the third and the fourth quadrant in the loop, suggesting advancement of the relay in phase, that is, increment of the imaginary parts in complex waves.
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62.65.+k Acoustical properties of solids
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations

Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters

Minghua Wang, Dongsheng Li, Zhizhong Yuan, Deren Yang, and Duanlin Que

Appl. Phys. Lett. 90, 131903 (2007); http://dx.doi.org/10.1063/1.2717014 (3 pages) | Cited 19 times

Online Publication Date: 26 March 2007

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The photoluminescence (PL) from defect-related states and Si nanoclusters was observed in the Si-rich silicon nitride films simultaneously. The weaker red-light emission of Si nanoclusters was obtained in the 1100 °C annealed films with the 514.5 nm excitation. Due to the quantum confinement effect, the PL peaks redshift with the increase of the excess Si concentration. Excited by the 325 nm line, strong PL from N and Si dangling bond centers was observed in either the as-deposited films or the 1100 °C annealed ones. The results demonstrate that the luminescence from defect-related states or Si nanoclusters is selected by the excitation energy.
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78.55.Hx Other solid inorganic materials
78.66.-w Optical properties of specific thin films
71.55.Ht Other nonmetals
81.40.Gh Other heat and thermomechanical treatments

Molecular statics calculation of the formation enthalpy for ternary metal systems based on the long-range empirical interatomic potentials

X. D. Dai, J. H. Li, and B. X. Liu

Appl. Phys. Lett. 90, 131904 (2007); http://dx.doi.org/10.1063/1.2716361 (3 pages) | Cited 6 times

Online Publication Date: 27 March 2007

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A scheme is proposed in the present study to predict the formation enthalpy of the ternary metal system. Based on the long-range empirical potential model, the interatomic potentials are first constructed for the Cu–Ag–Au, Cu–Ag–Ni, Ag–Au–Ni, and Cu–Au–Ni systems, and then molecular statics calculations are performed to predict the formation enthalpies of the four systems. It is found that the predicted results by the present scheme match well with those obtained by experiments or ab initio calculations, exhibiting a more precise feature than Miedema’s model.
Show PACS
82.60.Cx Enthalpies of combustion, reaction, and formation
65.40.G- Other thermodynamical quantities
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