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26 Mar 2007

Volume 90, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 134101 (2007); http://dx.doi.org/10.1063/1.2679209 (3 pages)

S. Srinivasan, J. Hiller, B. Kabius, and O. Auciello
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Distinction between nonthermal plasma and thermal desorptions for NOx and CO2

Keiichiro Yoshida, Masaaki Okubo, and Toshiaki Yamamoto

Appl. Phys. Lett. 90, 131501 (2007); http://dx.doi.org/10.1063/1.2716210 (3 pages) | Cited 4 times

Online Publication Date: 26 March 2007

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Nonthermal plasma (NTP) desorption is used in NOx aftertreatment systems for diesel engine exhaust gas. The authors conducted desorption experiments for both NTP and thermal desorptions under similar conditions and electric power levels. The results confirm that NO, NO2, and CO2 are desorbed by the NTP at lower gas temperatures, while the total amount of desorbed gas is nearly the same for both the processes. Moreover, the amount of NO2 for the NTP desorption is greater than that for the thermal desorption. The desorption of CO2 by the NTP is more significant and rapid than that by the thermal desorption.
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89.20.Kk Engineering
68.43.Vx Thermal desorption

Investigation of dielectric barrier discharge dependence on permittivity of barrier materials

Ruixing Li, Qing Tang, Shu Yin, and Tsugio Sato

Appl. Phys. Lett. 90, 131502 (2007); http://dx.doi.org/10.1063/1.2716848 (3 pages) | Cited 5 times

Online Publication Date: 26 March 2007

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It has been evidenced by both theory and experiments that a barrier possessing a high permittivity can create a high energy for dielectric barrier discharge. However, this argument was challenged by the recent experiments of the authors. They found an optimum permittivity value to generate denser and stronger microdischarges, as well as a high reactivity of destruction CO2 in the entire gap space for plasma chemistry. When the barrier permittivity was higher than this optimum value, the microdischarges became sparser and even extinguished since the large number of charges resulted from higher permittivity accumulated on the dielectric surface to reduce the electric field.
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52.80.-s Electric discharges
52.50.Dg Plasma sources
52.25.Mq Dielectric properties
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Dependence of ion sheath collapse on secondary electron emission in plasma immersion ion implantation

Dixon T. K. Kwok, Shihao Pu, Ricky K. Y. Fu, Fanya Jin, and Paul K. Chu

Appl. Phys. Lett. 90, 131503 (2007); http://dx.doi.org/10.1063/1.2717082 (3 pages) | Cited 4 times

Online Publication Date: 26 March 2007

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The collapse of the ion sheath in front of a dielectric substrate during argon plasma immersion ion implantation is investigated using a Langmuir probe. The probe signals during the buildup and collapse of the ion sheath are recorded from a lime glass substrate with a magnesium metal plate placed on top. The collapsing speed of the ion sheath is shown to strongly depend on the secondary electron emission coefficient of the substrate. The authors’ results show that it is possible to derive secondary electron emission coefficients from insulating materials based on the probe signals.
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52.40.Kh Plasma sheaths
52.77.Dq Plasma-based ion implantation and deposition
52.40.Hf Plasma-material interactions; boundary layer effects
52.70.Ds Electric and magnetic measurements
52.25.Tx Emission, absorption, and scattering of particles

Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition

Michael Seman, Joshua J. Robbins, Sumit Agarwal, and Colin A. Wolden

Appl. Phys. Lett. 90, 131504 (2007); http://dx.doi.org/10.1063/1.2716310 (3 pages) | Cited 10 times

Online Publication Date: 29 March 2007

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Ta2O5 thin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of O2 and the metal precursor. By appropriately controlling the gas-phase environment self-limiting deposition at controllable rates ( ∼ 1 Å/pulse) was obtained. The process was insensitive to substrate temperature, with a constant deposition rate observed from 90 to 350 °C. As-deposited Ta2O5 films under these conditions displayed good dielectric properties. Performance improvements correlate strongly with film density and composition as measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy. Pulsed PECVD eliminates the need for gas actuation and inert purge steps required by atomic layer deposition.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
68.55.A- Nucleation and growth
78.30.Hv Other nonmetallic inorganics

Switching characteristics of microplasmas in a planar electrode gap

Hasibur Rahaman, Byung-Joon Lee, Isfried Petzenhauser, Klaus Frank, Jürgen Urban, and Robert Stark

Appl. Phys. Lett. 90, 131505 (2007); http://dx.doi.org/10.1063/1.2718490 (3 pages) | Cited 2 times

Online Publication Date: 30 March 2007

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Microplasmas at high pressure have been the authors’ special interest for its practical relevance to the development of a switch. They concentrated on repetitive switching with a possibility to exceed the up to now known values for plasma closing switches and simultaneously maintaining a subnanosecond rise time of the switched pulses at a load. They examined several parameters for this purpose such as the electrode gap spacing, the electrode geometry, the gas type, the gas pressure, and including the applied voltage and current rating to operate these plasmas.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.50.Dg Plasma sources
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
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