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2 Apr 2007

Volume 90, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 90, 142110 (2007); http://dx.doi.org/10.1063/1.2720640 (3 pages)

M. T. Björk, O. Hayden, H. Schmid, H. Riel, and W. Riess
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Bleaching and diffusion dynamics in optofluidic dye lasers

Morten Gersborg-Hansen, Søren Balslev, Niels Asger Mortensen, and Anders Kristensen

Appl. Phys. Lett. 90, 143501 (2007); http://dx.doi.org/10.1063/1.2718503 (3 pages) | Cited 3 times

Online Publication Date: 2 April 2007

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The authors have investigated the bleaching dynamics that occur in optofluidic dye lasers where the liquid laser dye in a microfluidic channel is locally bleached due to optical pumping. They find that for microfluidic devices, the dye bleaching may be compensated through diffusion of dye molecules alone. By relying on diffusion rather than convection to generate the necessary dye replenishment, their observation potentially allows for a significant simplification of optofluidic dye laser device layouts, omitting the need for cumbersome and costly external fluidic handling or on-chip microfluidic pumping devices.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
47.85.Np Fluidics
85.60.-q Optoelectronic devices

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

C. Z. Zhao, M. B. Zahid, J. F. Zhang, G. Groeseneken, R. Degraeve, and S. De Gendt

Appl. Phys. Lett. 90, 143502 (2007); http://dx.doi.org/10.1063/1.2719022 (3 pages) | Cited 5 times

Online Publication Date: 2 April 2007

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Threshold voltage Vth instability is one major issue for future metal-oxide-semiconductor field effect transistors (MOSFETs) with hafnium (Hf) based gate dielectrics. Previous attention was focused on n-channel MOSFETs (nMOSFETs) and the implicit assumption is that it is not important for p-channel MOSFETs (pMOSFETs). This work shows that the Vth instability of pMOSEFTs can be higher than that of nMOSFETs for a sub-2 nm nitrided Hf layer. Unlike nMOSFETs, the Vth instability of pMOSFETs is insensitive to measurement time, does not saturate as stress voltage increases, and is not controlled by carrier fluency. Using Hf silicates is less effective in suppressing it. Some speculations are given on the defect and physical processes responsible for the instability.
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85.30.Tv Field effect devices

ZnO-based film bulk acoustic resonator for high sensitivity biosensor applications

Z. Yan, X. Y. Zhou, G. K. H. Pang, T. Zhang, W. L. Liu, J. G. Cheng, Z. T. Song, S. L. Feng, L. H. Lai, J. Z. Chen, and Y. Wang

Appl. Phys. Lett. 90, 143503 (2007); http://dx.doi.org/10.1063/1.2719149 (3 pages) | Cited 20 times

Online Publication Date: 2 April 2007

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Zinc oxide (ZnO)-based film bulk acoustic resonator consisting of a piezoelectric element (Au/ZnO/Pt) and a Bragg reflector (ZnO/Pt multilayer structure) has been fabricated by magnetron sputtering. The transmission electron microscopy and x-ray diffraction measurements revealed that all thin film layers in the device were well crystallized and highly textured. By electrical measurements, it was found that the device had a high resonant frequency (3.94 GHz) and mass sensitivity (8970 Hz cm2/ng). The use of the device as a biosensor was demonstrated by comparing the resonant properties of the device with/without coatings of biospecies.
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87.80.-y Biophysical techniques (research methods)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures

Y. Q. Wu, T. Shen, P. D. Ye, and G. D. Wilk

Appl. Phys. Lett. 90, 143504 (2007); http://dx.doi.org/10.1063/1.2719228 (3 pages) | Cited 18 times

Online Publication Date: 2 April 2007

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The authors report on an Al2O3 gate oxide deposited on n-type GaN by atomic layer deposition technique. The high-frequency C‐V characteristic shows deep-depletion behavior at room temperature due to the wide band gap semiconductor nature of GaN. Systematic photoassisted C‐V measurements demonstrate the importance of postdeposition-annealing process which could improve the average interface trap density Dit of (1–2)×1012/cm2 eV on the as-grown films to 7×1010/cm2 eV on the same films after 800 °C rapid thermal annealing in a N2 ambient. The high-frequency C‐V technique or Terman technique is also applied to estimate the mid-gap Dit and compare to the results from photoassisted C‐V technique.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
73.20.At Surface states, band structure, electron density of states
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhanced electrophosphorescence of copper complex based devices by codoping an iridium complex

Zisheng Su, Wenlian Li, Guangbo Che, Maoliang Xu, Zhiguo Kong, Dan Wang, Qi Xin, Liangliang Han, Bei Chu, and Defeng Bi

Appl. Phys. Lett. 90, 143505 (2007); http://dx.doi.org/10.1063/1.2719238 (3 pages) | Cited 3 times

Online Publication Date: 2 April 2007

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Evidently enhanced electrophosphorescence of [Cu(bis[2-(diphenylphosphino)phenyl] ether)(6,7-dicyanodipyrido [2,2-d:2′,3′-f] quinoxaline)] BF4 (CuI complex) by codoping bis[(4,6-difluorophenyl)-pyridinato-N, C2](picolinato)Ir(III) (FIrpic) into the same host, 4,4′-N,N′-dicarbazole-biphenyl, was demonstrated. The device codoped with 8 wt % FIrpic and 2 wt % CuI complex shows a maximum current efficiency and power efficiency of 26.6 cd/A and 17.8 lm/W, respectively, which were increased by factors of 2.6 and 2.1 compared with the 2 wt % CuI complex monodoped device. The improvements of the devices were testified to the efficient energy transfer from FIrpic to the CuI complex. The detail of the energy transfer mechanism between the two phosphors was also proposed.
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85.60.Jb Light-emitting devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.60.Fi Electroluminescence

Determining the internal quantum efficiency of highly efficient polymer solar cells through optical modeling

L. H. Slooff, S. C. Veenstra, J. M. Kroon, D. J. D. Moet, J. Sweelssen, and M. M. Koetse

Appl. Phys. Lett. 90, 143506 (2007); http://dx.doi.org/10.1063/1.2718488 (3 pages) | Cited 103 times

Online Publication Date: 3 April 2007

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A power conversion efficiency of 4.2% (AM1.5, 1000 W/m2) is measured for an organic solar cell based on an active layer of an alternating copolymer, containing a fluorene and a benzothiadiazole unit with two neighboring thiophene rings, and a fullerene derivative. Using optical modeling, the absorption profile in the active layer of the solar cell is calculated and used to calculate the maximum short circuit current. The calculated currents are compared with measured currents from current-voltage measurements for various film thicknesses. From this the internal quantum efficiency is estimated to be 75% at the maximum for the best device.
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84.60.Jt Photoelectric conversion

Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions

Y. Hikita, Y. Kozuka, T. Susaki, H. Takagi, and H. Y. Hwang

Appl. Phys. Lett. 90, 143507 (2007); http://dx.doi.org/10.1063/1.2719157 (3 pages) | Cited 16 times

Online Publication Date: 3 April 2007

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Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Ei Rectification
77.22.Ch Permittivity (dielectric function)
79.60.Jv Interfaces; heterostructures; nanostructures
73.20.At Surface states, band structure, electron density of states

Rectifying properties of magnetite-based Schottky diode and the effects of magnetic field

Y. Z. Chen, J. R. Sun, Y. W. Xie, D. J. Wang, W. M. Lu, S. Liang, and B. G. Shen

Appl. Phys. Lett. 90, 143508 (2007); http://dx.doi.org/10.1063/1.2719614 (3 pages) | Cited 11 times

Online Publication Date: 4 April 2007

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Rectifying properties, with and without magnetic field, of a high quality Fe3O4/SrTiO3:Nb Schottky diode have been experimentally studied. The junction exhibits an excellent rectifying behavior both below and above the Verwey temperature (TV) of Fe3O4. Magnetic field has a weak but visible effect on the transport process of the junction, producing a negative magnetoresistance for T<TV and a positive magnetoresistance for T>TV. Based on an analysis of the current-voltage characteristics, the spin polarization of Fe3O4 has been deduced. It is a strong function of temperature, varying between −78% and 18%.
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85.30.Kk Junction diodes
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Thermal annealing effects on the electrical characteristics of the back interface in nano-silicon-on-insulator channel

Won-Ju Cho and Chang-Geun Ahn

Appl. Phys. Lett. 90, 143509 (2007); http://dx.doi.org/10.1063/1.2719641 (3 pages) | Cited 9 times

Online Publication Date: 4 April 2007

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The electrical properties of the back interface between the thin silicon and buried-oxide layers of nano-silicon-on-insulator substrate were evaluated. The effects of rapid thermal annealing (RTA) process were investigated, and the distributions of interface states at the thin silicon/buried-oxide interface were estimated by using metal-point-contact field-effect-transistor method. The interface-states at the back interface were considerably increased by RTA process. The RTA higher than 800 °C contributes to the increase of acceptor-type interface states. The increased interface states were effectively reduced by conventional furnace annealing at 500 °C in nitrogen ambient.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
73.20.-r Electron states at surfaces and interfaces
73.22.-f Electronic structure of nanoscale materials and related systems
73.63.Bd Nanocrystalline materials

Low-power switching in magnetoresistive random access memory bits using enhanced permeability dielectric films

Srinivas V. Pietambaram, N. D. Rizzo, R. W. Dave, J. Goggin, K. Smith, J. M. Slaughter, and S. Tehrani

Appl. Phys. Lett. 90, 143510 (2007); http://dx.doi.org/10.1063/1.2719671 (3 pages) | Cited 6 times

Online Publication Date: 4 April 2007

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We reduced the switching field (Hsw) in arrays of single-layer magnetoresistive random access memory elements using enhanced permeability dielectric (EPD) films. This reduction is due to an increased magnetic flux density produced at the bit by increasing the permeability μ of the surrounding dielectric. The authors produced EPD films by embedding superparamagnetic nanoparticles of various sizes in oxides of Al, Mg, or Si. For bits surrounded by EPD, Hsw decreased linearly as μ increased. Using this approach, we reduced Hsw by ≈ 40% for μ = 3.5, without changing the energy barrier to magnetization reversal.
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84.30.Sk Pulse and digital circuits

Stress in silicon interlayers at the SiOx/Ge interface

S. O’Callaghan, S. Monaghan, S. D. Elliott, and J. C. Greer

Appl. Phys. Lett. 90, 143511 (2007); http://dx.doi.org/10.1063/1.2713122 (3 pages) | Cited 1 time

Online Publication Date: 5 April 2007

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Materials such as germanium display an advantage relative to silicon in terms of carrier mobilities but form poor quality interfaces to oxides. By sandwiching silicon layers between a germanium substrate and the oxide, advantages of the silicon oxide/silicon (SiOx/Si) interface can be retained combined with the advantage of a high mobility germanium substrate. Using density functional theory calculations, stress within the silicon interlayer is quantified for different interlayer thicknesses revealing that for up to three silicon layers, the stress in the interlayer is compensated for by the energy gained by forming silicon-oxygen bonds at the interface.
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68.35.Gy Mechanical properties; surface strains
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Double and triple junction polymer solar cells processed from solution

Jan Gilot, Martijn M. Wienk, and René A. J. Janssen

Appl. Phys. Lett. 90, 143512 (2007); http://dx.doi.org/10.1063/1.2719668 (3 pages) | Cited 127 times

Online Publication Date: 5 April 2007

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Multiple junction solar cells incorporating polymer:fullerene bulk heterojunctions as active layers and solution processed electron and hole transport layers are presented. The recombination layer, deposited between the active layers, is fabricated by spin coating ZnO nanoparticles from acetone, followed by spin coating neutral pH poly(3,4-ethylenedioxythiophene) from water and short UV illumination of the completed device. The key advantage of this procedure is that each step does not affect the integrity of previously deposited layers. The open-circuit voltage (Voc) for double and triple junction solar cells is close to the sum of the Voc’s of individual cells.
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84.60.Jt Photoelectric conversion

Systematic study of contact annealing: Ambipolar silicon nanowire transistor with improved performance

K. Byon, D. Tham, J. E. Fischer, and A. T. Johnson

Appl. Phys. Lett. 90, 143513 (2007); http://dx.doi.org/10.1063/1.2720309 (3 pages) | Cited 17 times

Online Publication Date: 5 April 2007

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High performance ambipolar silicon nanowire (SiNW) transistors were fabricated. SiNWs with uniform oxide sheath thicknesses of 6–7 nm were synthesized via a gas-flow-controlled thermal evaporation method. Field effect transistors (FETs) were fabricated using as-grown SiNWs. A two step annealing process was used to control contacts between SiNW and metal source and drain in order to enhance device performance. Initially p-channel devices exhibited ambipolar behavior after contact annealing at 400 °C. Significant increases in on/off ratio and channel mobility were also achieved by annealing.
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85.30.Tv Field effect devices

Ultraviolet-sensitive field-effect transistor utilized amorphous thin films of organic donor/acceptor dyad

Tobat P. I. Saragi, Robert Pudzich, Thomas Fuhrmann-Lieker, and Josef Salbeck

Appl. Phys. Lett. 90, 143514 (2007); http://dx.doi.org/10.1063/1.2720743 (3 pages) | Cited 12 times

Online Publication Date: 6 April 2007

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The authors report on highly responsive ultraviolet (UV)-sensitive field-effect transistor based on amorphous thin films of organic donor/acceptor dyad. An optimal responsivity of up to 6.5 A/W can be obtained for UV light at 370 nm. High ratios of photocurrent to dark current of up to 4.3×103 can also be obtained. The underlying mechanism can be sufficiently explained by ultrafast photoinduced intramolecular charge transfer between the acceptor and the donor. This result offers a potential application of organic semiconductors as active materials for UV detectors.
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85.30.Tv Field effect devices
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Resistance switching memory device with a nanoscale confined current path

Yasushi Ogimoto, Yukio Tamai, Masashi Kawasaki, and Yoshinori Tokura

Appl. Phys. Lett. 90, 143515 (2007); http://dx.doi.org/10.1063/1.2720747 (3 pages) | Cited 21 times

Online Publication Date: 6 April 2007

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The impact of a nanoscale confined current path is demonstrated on a resistance switching memory device. The memory element consists of a Ti layer constricted by an insulating self-assembly nanogap oxide, in which a redox reaction is anticipated for the resistance change without an aid of a forming process. The device exhibits a resistance ratio greater than 100, a data retention longer than 3.7×106 s, an endurance of more than 2000 cycles, and a switching operation temperature up to 125 °C at an operation condition of ±2.5 V with 50–100 ns duration, evidencing an essential role of the nanostructure on the device performance.
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84.30.Sk Pulse and digital circuits

Lubricant transfer from disk to slider in hard disk drives

Yansheng Ma and Bo Liu

Appl. Phys. Lett. 90, 143516 (2007); http://dx.doi.org/10.1063/1.2721122 (3 pages) | Cited 17 times

Online Publication Date: 6 April 2007

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The physics behind lubricant transfer from disk to slider and lubricant accumulation on the slider in hard disk drives is explained. The effect of slider air bearing pressure on the lubricant transfer is discussed. It is found that the lubricant transfer is not affected by slider air bearing pressure. Lubricant molecular weight plays a dominant role in the lubricant transfer and lubricant accumulation. The amount of lubricant transfer and accumulation decreases dramatically with the increase in lubricant molecular weight. A thinner lubricant and higher bonding ratio of lubricant on disk surface reduce the lubricant transfer and accumulation obviously.
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85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
89.20.Kk Engineering

Quantum-dot-sensitized solar cells: Assembly of CdS-quantum-dots coupling techniques of self-assembled monolayer and chemical bath deposition

Sheng-Chih Lin, Yuh-Lang Lee, Chi-Hsiu Chang, Yu-Jen Shen, and Yu-Min Yang

Appl. Phys. Lett. 90, 143517 (2007); http://dx.doi.org/10.1063/1.2721373 (3 pages) | Cited 72 times

Online Publication Date: 6 April 2007

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Two methods, coupling self-assembled monolayer and chemical bath deposition (CBD), were utilized to assemble cadmium sulfide (CdS) quantum dots (QDs) onto mesoporous TiO2 films for dye-sensitized solar cell (DSSC) applications. Colloidal CdS QDs were first self-assembled on the TiO2 surface. CBD was then introduced to replenish the incorporated amount and increase the coverage ratio of CdS QDs on the TiO2 surface. The preassembled CdS QDs act as nucleation sites in the CBD process, forming a CdS nanofilm with an interfacial structure capable of inhibiting the recombination of injected electrons. An efficiency as high as 1.35% for the QD-sensitized DSSC was achieved using the present strategy.
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81.16.Dn Self-assembly
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.A- Nucleation and growth
68.65.Hb Quantum dots (patterned in quantum wells)
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
84.60.Jt Photoelectric conversion

Lithography-free fabrication of graphene devices

N. Staley, H. Wang, C. Puls, J. Forster, T. N. Jackson, K. McCarthy, B. Clouser, and Y. Liu

Appl. Phys. Lett. 90, 143518 (2007); http://dx.doi.org/10.1063/1.2719607 (3 pages) | Cited 23 times

Online Publication Date: 6 April 2007

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We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask. This technique, which is free of the possible contamination of graphene during lithographic process, is simple to implement, versatile, and capable of achieving high throughput. We prepared devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1,2,3, and higher using this technique. We observed possible weak localization behavior and an apparent reduction of density of states near the Fermi energy in nLG.
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85.35.Ds Quantum interference devices

Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

Joshua D. Caldwell, Robert E. Stahlbush, Karl D. Hobart, Orest J. Glembocki, and Kendrick X. Liu

Appl. Phys. Lett. 90, 143519 (2007); http://dx.doi.org/10.1063/1.2719650 (3 pages) | Cited 9 times

Online Publication Date: 6 April 2007

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Recent reports have shown that Shockley stacking fault (SSF) growth in 4H-SiC may be reversed via low temperature (210–600 °C) annealing. It is not clear if the associated drift in the forward voltage drop (Vf) is also reversed. Here we show that annealing of SSFs causes the complete and repeatable recovery of Vf. Furthermore, by looking at the time-dependent recovery of Vf during both the current stressing and thermal annealing of a single diode, we ascertain that the mechanisms for these two processes are different.
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85.30.Kk Junction diodes

Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Jaecheon Sohn, S. H. Han, Masahiro Yamaguchi, and S. H. Lim

Appl. Phys. Lett. 90, 143520 (2007); http://dx.doi.org/10.1063/1.2719681 (3 pages) | Cited 5 times

Online Publication Date: 6 April 2007

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Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a SiO2 dielectric and a Co–Fe–Al–O magnetic layer are presented. Extremely large signal attenuation is achieved (−90 dB at 20 GHz) while the signal reflection is relatively small, being below −10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the Cu/SiO2/Co–Fe–Al–O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
84.40.Az Waveguides, transmission lines, striplines

Nanovoid nature and compression effects in organic light emitting diode

Jong H. Kim, Soon-min Seo, and Hong H. Lee

Appl. Phys. Lett. 90, 143521 (2007); http://dx.doi.org/10.1063/1.2720268 (3 pages) | Cited 4 times

Online Publication Date: 6 April 2007

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Compressing the organic layers in organic light emitting diode (OLED) is introduced as an effective process for improving the performance of organic electroluminescent devices. This process involves applying physical pressure to the organic layers of the device. The OLED fabricated by this method shows a notable increase in luminance intensity and current efficiency when compared with compression-free device, the current efficiency almost doubling. The organic layers have nanovoids and the compression results in a denser packing of organic molecules, leading to a better charge transport.
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85.60.Jb Light-emitting devices
85.35.-p Nanoelectronic devices
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