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9 Apr 2007

Volume 90, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 151106 (2007); http://dx.doi.org/10.1063/1.2722564 (3 pages)

P. Béjot, L. Bonacina, J. Extermann, M. Moret, J. P. Wolf, R. Ackermann, N. Lascoux, R. Salamé, E. Salmon, J. Kasparian, L. Bergé, S. Champeaux, C. Guet, N. Blanchot, O. Bonville, et al.
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Fabrication and ferroelectric properties of highly dense lead-free piezoelectric (K0.5Na0.5)NbO3 thick films by aerosol deposition

Jungho Ryu, Jong-Jin Choi, Byung-Dong Hahn, Dong-Soo Park, Woon-Ha Yoon, and Ki-Hoon Kim

Appl. Phys. Lett. 90, 152901 (2007); http://dx.doi.org/10.1063/1.2720751 (3 pages) | Cited 38 times

Online Publication Date: 9 April 2007

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Lead-free piezoelectric thick films of (K0.5Na0.5)NbO3 were fabricated by aerosol-deposition method. The thickness of KNN film was 7.1 μm and fully dense films were obtained. The dielectric constants ε3T/ε0 of the as-deposited and annealed films at 1 kHz were 116 and 545, respectively, which are higher than any previously reported values for lead-free piezoelectric thin/thick films, either without or with heat treatment. The ferroelectric properties were improved after annealing and the maximum values of Pr = 8.1 μC/cm3 and Ec = 100 kV/cm were achieved. These values are markedly superior to those of sintered KNN ceramic counterparts.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity

Thermodynamic equilibrium model of pyroelectric polycrystalline thin films

Wencheng Hu, Chuanren Yang, Wanli Zhang, and Xiyi Liao

Appl. Phys. Lett. 90, 152902 (2007); http://dx.doi.org/10.1063/1.2721146 (3 pages)

Online Publication Date: 9 April 2007

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This study deals with the thermodynamic equilibrium theory of pyroelectric polycrystalline thin films. The unit cell of pyroelectric polycrystalline thin films in the ferroelectric phase to be considered is assumed as a dipole and is a nondipole at its paraelectric phase. The phase transition between ferroelectric and paraelectric phases is hypothesized as an equilibrium of the dipoles and the nondipole. Based on the thermodynamic equilibrium theory, an expression formula about the spontaneous polarization and temperature is suggested. Considering the sandwich structure of pyroelectric polycrystalline thin films, an equation about the relations between pyroelectric coefficient and temperature was established.
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77.55.-g Dielectric thin films
77.70.+a Pyroelectric and electrocaloric effects
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
65.40.G- Other thermodynamical quantities

Multiferroic nanoparticulate Bi3.15Nd0.85Ti3O12–CoFe2O4 composite thin films prepared by a chemical solution deposition technique

X. L. Zhong, J. B. Wang, M. Liao, G. J. Huang, S. H. Xie, Y. C. Zhou, Y. Qiao, and J. P. He

Appl. Phys. Lett. 90, 152903 (2007); http://dx.doi.org/10.1063/1.2709946 (3 pages) | Cited 30 times

Online Publication Date: 9 April 2007

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Multiferroic xBi3.15Nd0.85Ti3O12–(1−x)CoFe2O4 composite thin films with x = 0.5, 0.6, and 0.7 were fabricated on Pt/Ti/SiO2/Si(100) substrates by a chemical solution deposition technique. X-ray diffraction shows that there are no other phases but bismuth-layered perovskite Bi3.15Nd0.85Ti3O12 and spinel CoFe2O4 phases in the films. Scanning electron microscopy reveals that CoFe2O4 aggregates locally into nanoparticles and embeds in the Bi3.15Nd0.85Ti3O12 matrix. The composite films exhibit both good ferroelectric and magnetic properties at room temperature, as well as distinct magnetoelectric coupling behaviors, which are comparable with those of multiferroic composite films with conventional Pb-based ferroelectric as a ferroelectric component.
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77.55.-g Dielectric thin films
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.A- Nucleation and growth
75.70.Ak Magnetic properties of monolayers and thin films
75.80.+q Magnetomechanical effects, magnetostriction
77.80.-e Ferroelectricity and antiferroelectricity

Strain-mediated electric-field control of resistance in the La0.85Sr0.15MnO3/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 structure

R. K. Zheng, Y. Wang, H. L. W. Chan, C. L. Choy, and H. S. Luo

Appl. Phys. Lett. 90, 152904 (2007); http://dx.doi.org/10.1063/1.2721399 (3 pages) | Cited 11 times

Online Publication Date: 10 April 2007

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The authors have deposited thin films of La0.85Sr0.15MnO3 (LSMO) on 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN-PT) single-crystal substrates and have achieved modulation of the resistance of the LSMO film by applying an electric field across the PMN-PT substrate whether the LSMO film is in the paramagnetic, ferromagnetic, or charge-ordered state. Piezoelectric measurements show that the electric field gives rise to a lattice strain in the PMN-PT substrate via the converse piezoelectric effect, which then induces a lattice strain and hence a resistance change in the LSMO film. Analysis of the data indicates that the electric-field-induced lattice strain effect dominates over the field effect in the LSMO/PMN-PT structure.
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73.61.Ng Insulators
77.65.Ly Strain-induced piezoelectric fields
68.60.Bs Mechanical and acoustical properties
75.20.Ck Nonmetals
75.50.Dd Nonmetallic ferromagnetic materials
71.45.-d Collective effects

Piezoforce microscopy study of lead-free perovskite Na0.5Bi0.5TiO3 thin films

F. Rémondière, A. Wu, P. M. Vilarinho, and J. P. Mercurio

Appl. Phys. Lett. 90, 152905 (2007); http://dx.doi.org/10.1063/1.2721843 (3 pages) | Cited 13 times

Online Publication Date: 10 April 2007

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As a promising lead-free ferroelectric material, Na0.5Bi0.5TiO3 (NBT) was synthesized as thin films via a classic 2-methoxyethanol sol-gel route and chemical solution deposition method. Perovskite structure with random orientation of crystallites has been obtained on platinized silicon wafer at low temperature (460 °C). Piezoelectric activity in such films was detected using electrical analysis. X-ray diffraction and piezoresponse force microscopy (PFM) have been used to analyze NBT thin films with different microstructures and properties dependent on fabrication and annealing processes.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments

Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment

Tae Joo Park, Jeong Hwan Kim, Min Ha Seo, Jae Hyuck Jang, and Cheol Seong Hwang

Appl. Phys. Lett. 90, 152906 (2007); http://dx.doi.org/10.1063/1.2721845 (3 pages) | Cited 15 times

Online Publication Date: 10 April 2007

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The influence of thick (1.4 nm) and thin (0.6 nm) SiO2 interfacial layers grown by an O3 predeposition treatment during atomic layer deposition of high-k HfO2 films on the thermal stability and chemical structure of the film was investigated. It was found that the HfO2/thick SiO2 stack maintained a good thermal stability up to the postdeposition annealing at 1000 °C because Hf silicate formation was accompanied by the consumption of the interfacial SiO2 layer. On the other hand, the HfO2/thin SiO2 layer stack showed an inferior stability because Hf silicate was formed by enhanced Si diffusion from the Si substrate during the same postdeposition annealing.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.Ny Chemical interdiffusion; diffusion barriers

Uniaxial-stress induced phase transitions in [001]C-poled 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3

Pierre-Eymeric Janolin, Brahim Dkhil, Matthew Davis, Dragan Damjanovic, and Nava Setter

Appl. Phys. Lett. 90, 152907 (2007); http://dx.doi.org/10.1063/1.2721856 (3 pages) | Cited 8 times

Online Publication Date: 11 April 2007

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First order rhombohedral to orthorhombic stress-induced phase transitions have been evidenced by bulk charge-stress measurements and x-ray diffraction derived lattice strain measurements in [001]C-poled 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 (PZN-4.5PT). The transitions are induced by uniaxial compressive loads applied either along or perpendicular to the poling direction. In each case, they occur via rotation of the polar vector in the Cm monoclinic plane and the induced lattice strain is hysteretic yet reversible. Although no depoling is observed in the transverse mode net depolarization is observed under longitudinal stress which is important for the use of [001]C-poled PZN-PT and (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 single crystals in Tonpilz-type underwater projectors.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
64.70.K- Solid-solid transitions
77.22.Ej Polarization and depolarization

Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant

Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, C.-H. Hsu, and J. Kwo

Appl. Phys. Lett. 90, 152908 (2007); http://dx.doi.org/10.1063/1.2722226 (3 pages) | Cited 24 times

Online Publication Date: 11 April 2007

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Nanometer thick cubic HfO2 doped with 19 at. % Y2O3 (YDH) epitaxial films were grown on GaAs (001) using molecular beam epitaxy. Structural studies determined the epitaxial orientation relationships between the cubic YDH films and GaAs to be (001)GaAs//(001)YDH and [100]GaAs//[100]YDH. The YDH structure is strain relaxed with a lattice constant of 0.5122 nm with a small mosaic spread of 0.023° and a twist angle of 2.9°. The YDH/GaAs interface is atomically abrupt without evidence of reacted interfacial layers. From C-V and I-V measurements a 7.7 nm thick YDH film has an enhanced dielectric constant κ ∼ 32, an equivalent oxide thickness of ∼ 0.94 nm, an interfacial state density Dit ∼ 7×1012 cm−2 eV−1, and a low leakage current density of 6×10−5 A/cm2 at 1 V gate bias.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.70.Ck X-ray scattering
73.61.-r Electrical properties of specific thin films

Frequency dispersion of dielectric permittivity–voltage hysteresis during field driven ferroelectric-antiferroelectric-ferroelectric transition in antiferroelectric liquid crystal (SmCA*)

Muklesur Rahman, A. Mukherjee, B. K. Chaudhuri, and A. Yoshizawa

Appl. Phys. Lett. 90, 152909 (2007); http://dx.doi.org/10.1063/1.2721135 (3 pages) | Cited 1 time

Online Publication Date: 12 April 2007

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Dielectric permittivity at different polarizing states during field driven ferroelectric-ferroelectric (F-F) transition and the dielectric relaxation spectra in the antiferroelectric liquid crystal (AFLC) phase have been studied to elucidate the interaction processes involved during the transition. The unwinding process of antiferroelectric helix has been found to be governed by the polar coupling between the applied field and the antiferroelectric polarization vector followed by nonpolar interaction with the dielectric anisotropy of the tilted molecules. Frequency dependence of the permittivity-voltage hysteresis behavior observed during the F-F transitions is concluded to be due to different relaxation processes involved in the AFLC phase.
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77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer

Xinhong Cheng, Li Wan, Zhaorui Song, Yuehui Yu, and DaShen Shen

Appl. Phys. Lett. 90, 152910 (2007); http://dx.doi.org/10.1063/1.2722665 (3 pages) | Cited 7 times

Online Publication Date: 13 April 2007

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HfAl2O5 gate dielectric film with an O-gettering Ti capping layer treated with rapid thermal annealing process and its interfacial structure and electrical properties were reported. X-ray reflectivity measurements and x-ray photoelectron spectroscopy suggested that the interfacial layers were composed of a 0.5 nm HfAlSiO layer and a 1.5 nm Six(SiO2)1−x (x<1) layer for the as-deposited film. However, for the annealed film, HfAlSiO layer was not found and the 1.5 nm Six(SiO2)1−x transformed to a 1 nm SiO2. The electrical measurements indicated that the equivalent oxide thickness decreased to 2.9 nm, and the leakage current was only 70 μA/cm2 at the gate bias of 10 MV/cm for the annealed film.
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77.55.-g Dielectric thin films
73.61.Ng Insulators
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
79.60.Dp Adsorbed layers and thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Magnetoelectric effect in epitaxial Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3MnO3 composite thin film

Y. G. Ma, W. N. Cheng, M. Ning, and C. K. Ong

Appl. Phys. Lett. 90, 152911 (2007); http://dx.doi.org/10.1063/1.2723645 (3 pages) | Cited 40 times

Online Publication Date: 13 April 2007

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The magnetoelectric effect (ME) in the epitaxial Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3MnO3 (PZT/LSMO) composite thin film deposited on LaAlO3 substrate was reported. This effect is generally negligible in the strictly condensed composite films, where the thick substrates would inhibit any free deformations of the ferroic films (as usually called as “substrate clamping”). In this work, the authors found that the substrate influence could be effectively declined by the formation of columnar-grain structures in the magnetostrictive LSMO layer. Quick release of the clamping strength along the film normal direction allowed for free deformation of the upper part of the LSMO columns and thus the piezoelectric PZT layer as well. The maximum ME voltage coefficients αE of 3.0 and 4.2 mV cm−1 Oe−1, respectively, for the “transverse” and “parallel” measurement modes were obtained.
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75.80.+q Magnetomechanical effects, magnetostriction
75.47.Pq Other materials
77.84.Lf Composite materials
77.55.-g Dielectric thin films
77.65.Bn Piezoelectric and electrostrictive constants
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Exploration of unusual electrical properties in carbon black/binary-polymer nanocomposites

Hai-Ping Xu, Zhi-Min Dang, Sheng-Hong Yao, Mei-Juan Jiang, and Dayang Wang

Appl. Phys. Lett. 90, 152912 (2007); http://dx.doi.org/10.1063/1.2723644 (3 pages) | Cited 16 times

Online Publication Date: 13 April 2007

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Ultralow percolation threshold, strong positive temperature coefficient (PTC) effect, and abnormal alternating current electrical behaviors were obtained in ternary nanocomposites consisting of polypropylene (PP) and polyvinylidene fluoride (PVDF) (volume ratio: 1/1) loaded with different amounts of nanosized carbon black (CB). These unusual properties could be assigned mainly to the special formation of electrically double-percolation network, the consecutive volume expansion of (PP-PVDF) cocontinuous phase, and the tunnel conduction between CB clusters. Both the low percolation threshold and the strong PTC effect should make the (CB-PP)/PVDF nanocomposites one of the most promising functional dielectric materials.
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77.84.Lf Composite materials
72.80.Tm Composite materials
73.40.Gk Tunneling
77.55.-g Dielectric thin films
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