Effects of alloy intermixing on the lateral confinement potential in InAs/GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy

Zibik, E. A.; Ng, W. H.; Wilson, L. R.; Skolnick, M. S.; Cockburn, J. W.; Gutierrez, M.; Steer, M. J.; Hopkinson, M.

doi:doi:10.1063/1.2724893

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Fast fragmentation of 20 nm iron oxide and 60 nm tin oxide nanoparticles into a few nanometer nanoparticles in a diffusion oxyhydrogen flame is reported. The phenomenon is explained by the in situ reduction of generated 20–60 nm nanoparticles. The fragmentation occurs due to reduction induced instability in the oxygen-deficient surface. Simulated experiments with electron irradiation and characterization with x-ray absorption spectroscopy substantiated this mechanism. This finding may open a ro...

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The effect of thermal annealing on the conduction band states in self-assembled quantum dots has been investigated using far-infrared absorption spectroscopy. Broadening of the absorption linewidth associated with the ground state (s) to first excited state (p) transitions indicates that annealed quantum dots become less uniform in the lateral direction but more uniform in the growth direction as evidenced by photoluminescence measurements. A significant decrease in the s to p transition energy and the p-state splitting has been observed upon annealing. The avoided crossing as the transition energy approaches the optical phonon energy provides evidence of strong electron-phonon coupling in quantum dots.

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, self-assembly, infrared spectra, annealing, photoluminescence, conduction bands, ground states, excited states, electron-phonon interactions, mixing

PACS

73.21.La

Quantum dots
61.72.Cc

Kinetics of defect formation and annealing
78.67.Hc

Quantum dots
78.55.Cr

III-V semiconductors
78.30.Fs

III-V and II-VI semiconductors
63.22.-m

Phonons or vibrational states in low-dimensional structures and nanoscale materials

ARTICLE DATA

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http://dx.doi.org/10.1063/1.2724893

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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