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1 Jan 2007

Volume 90, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 90, 012105 (2007); http://dx.doi.org/10.1063/1.2428402 (3 pages)

Jan Bauer, Frank Fleischer, Otwin Breitenstein, Luise Schubert, Peter Werner, Ulrich Gösele, and Margit Zacharias
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Significantly enhanced low-frequency dielectric permittivity in the BaTiO3/poly(vinylidene fluoride) nanocomposite

Zhi-Min Dang, Hai-Ping Xu, and Hai-Yan Wang

Appl. Phys. Lett. 90, 012901 (2007); http://dx.doi.org/10.1063/1.2393150 (3 pages) | Cited 28 times

Online Publication Date: 2 January 2007

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To disclose an effect of ceramic particle size on dielectric properties of BaTiO3/ poly(vinylidene fluoride) (BT/PVDF) composites at low frequency, the dielectric properties of the BT/PVDF composites loaded with different diameter BT particles at the same volume concentration were studied at wide frequency ranges from 10−1 to 107 Hz. A significant low-frequency dielectric permittivity increase in the BT/PVDF nanocomposite was noticed, which was not reported previously. The authors considered that the marked aggrandizement of interface and dipole polarization at low frequency is charged with the significant increase in dielectric permittivity.
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77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

X. Y. Zhou, J. Miao, J. Y. Dai, H. L. W. Chan, C. L. Choy, Y. Wang, and Q. Li

Appl. Phys. Lett. 90, 012902 (2007); http://dx.doi.org/10.1063/1.2430407 (3 pages) | Cited 8 times

Online Publication Date: 3 January 2007

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SrTiO3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO3/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO3 and the interfacial structure. Electrical measurements revealed that the SrTiO3 film was highly resistive.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
73.61.Ng Insulators
42.62.-b Laser applications
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
73.40.Ns Metal-nonmetal contacts

Multiferroic properties of epitaxially stabilized hexagonal DyMnO3 thin films

J.-H. Lee, P. Murugavel, D. Lee, T. W. Noh, Y. Jo, M.-H. Jung, K. H. Jang, and J.-G. Park

Appl. Phys. Lett. 90, 012903 (2007); http://dx.doi.org/10.1063/1.2429021 (3 pages) | Cited 25 times

Online Publication Date: 3 January 2007

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The authors fabricated epitaxial thin films of hexagonal DyMnO3, which otherwise form in a bulk perovskite structure, via deposition on Pt(111)‖Al2O3(0001) and YSZ(111) substrates, each of which has in-plane hexagonal symmetry. The polarization hysteresis loop demonstrated the existence of ferroelectricity in our hexagonal DyMnO3 films at least below 70 K. The observed 2.2 μC/cm2 remnant polarization at 25 K corresponded to a polarization enhancement by a factor of 10 compared to that of the bulk orthorhombic DyMnO3. Interestingly, this system showed an antiferroelectriclike feature in its hysteresis loop. Our hexagonal DyMnO3 films showed an antiferromagnetic Néel temperature around 60 K and a spin reorientation transition around 40 K. The authors also found spin-glass-like behavior, which was likely to arise from the geometric frustration of antiferromagnetically coupled Mn spins with an edge-sharing triangular lattice.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
75.70.Ak Magnetic properties of monolayers and thin films
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)

Dielectric properties of TbMnO3 ceramics

C. C. Wang, Y. M. Cui, and L. W. Zhang

Appl. Phys. Lett. 90, 012904 (2007); http://dx.doi.org/10.1063/1.2430634 (3 pages) | Cited 27 times

Online Publication Date: 4 January 2007

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The complex dielectric properties for ceramic samples of TbMnO3 were investigated as functions of temperature (100 K ⩽ T ⩽ 360 K) and frequency (100 Hz ⩽ f ⩽ 100 kHz). Two thermally activated dielectric relaxations were found with the activation energies of 0.30 and 0.22 eV for the high- and low-temperature relaxations, respectively. By means of complex impedance analysis the high-temperature relaxation was identified to originate from the internal barrier-layer capacitor effects related to the grain boundaries, and the low-temperature relaxation was ascribed to the dipolar effects induced by charge-carrier-hopping motions inside the grains.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
61.72.Mm Grain and twin boundaries
72.20.Ee Mobility edges; hopping transport

Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors

Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Chun-Hui Yang, Mei-Ling Kuo, Je-Hung Lin, and Chun-Yen Chang

Appl. Phys. Lett. 90, 012905 (2007); http://dx.doi.org/10.1063/1.2430629 (3 pages) | Cited 7 times

Online Publication Date: 5 January 2007

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In this study the authors investigated the Ge outdiffusion characteristics of HfOxNy/Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high-k bulk dielectric in the form of GeOx, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process.
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84.32.Tt Capacitors
85.30.Tv Field effect devices

Improved ferroelectric properties of bismuth titanate films by Nd and Mn cosubstitution

X. L. Zhong, J. B. Wang, L. Z. Sun, C. B. Tan, X. J. Zheng, and Y. C. Zhou

Appl. Phys. Lett. 90, 012906 (2007); http://dx.doi.org/10.1063/1.2430630 (3 pages) | Cited 12 times

Online Publication Date: 5 January 2007

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Thin films of Nd and Mn cosubstituted bismuth titanate, i.e., Bi3.15Nd0.85(Ti3−xMnx)O12 (BNTM) (x = 0, 0.005, 0.01, 0.03, 0.05, and 0.1), were fabricated on Pt/Ti/SiO2/Si(100) substrates at 700 °C by a chemical solution deposition technique. The structures of the films were analyzed using x-ray diffraction and Raman spectroscopy. These films possessed preferred (117) and (00l)-oriented polycrystalline structures. The ferroelectric properties of BNTM films were systematically investigated as a function of the Mn content. It is found that a low concentration substitution with manganese ions in Bi3.15Nd0.85Ti3O12 greatly enhances the remnant polarization (2Pr) and reduces the coercive field (2Ec) of the film. The 2Pr and 2Ec are 78 μC/cm2 and 205 kV/cm, respectively. No fatigue phenomenon is also observed for the BNTM film with x = 0.01 up to 1.5×1010 switching cycles.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics

Effect of tensile strain on morphology and dielectric property in nanotube/polymer nanocomposites

Zhi-Min Dang, Sheng-Hong Yao, and Hai-Ping Xu

Appl. Phys. Lett. 90, 012907 (2007); http://dx.doi.org/10.1063/1.2430633 (3 pages) | Cited 25 times

Online Publication Date: 5 January 2007

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As an electrically conducting filler, multiwall carbon nanotube (MWNT) with a great slenderness ratio was introduced into poly(vinylidene fluoride) (PVDF) to form the MWNT/PVDF nanocomposites. Dielectric properties of these composites before and after stretching were studied at wide frequency ranges from 102 to 107 Hz. The results showed that the dielectric constant and conductivity after stretching were always lower than those before stretching. In the composites with high concentration of MWNT, the decreases in dielectric constant and conductivity were very significant. Rearrangement of MWNT in the composites along with the tensile-strain direction could be charge with the results of dielectric properties.
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77.84.Lf Composite materials
72.80.Tm Composite materials
77.22.Ch Permittivity (dielectric function)

Piezoelectric response hysteresis in the presence of ferroelastic 90° domain walls

G. Le Rhun, I. Vrejoiu, and M. Alexe

Appl. Phys. Lett. 90, 012908 (2007); http://dx.doi.org/10.1063/1.2430681 (3 pages) | Cited 19 times

Online Publication Date: 5 January 2007

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Piezoelectric response hysteresis curves of Pb(Zr0.2Ti0.8)O3-based capacitors have been measured by piezoresponse force microscopy. The piezoelectric coefficient d33 was found to vary considerably depending on the position of the probing tip on the top electrode for films possessing a c/a/c domain structure. d33 values up to 125 pm/V, which is twice the theoretical value for a clamped film, have been measured. The spatial variations of the piezoelectric response amplitude is explained by a local movement of ferroelastic 90° a domains. This work experimentally proves the local enhancement of the polarization near the 90° wall boundaries, as predicted by Ishibashi et al. [Jpn. J. Appl. Phys. 44, 7512 (2005)] .
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
77.80.Dj Domain structure; hysteresis
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Working principle of voltage controlled differential magnetic field sensor

Hyeoungwoo Kim, Rashed A. Islam, and Shashank Priya

Appl. Phys. Lett. 90, 012909 (2007); http://dx.doi.org/10.1063/1.2429907 (3 pages) | Cited 4 times

Online Publication Date: 5 January 2007

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In this letter the authors present the experimental data illustrating the working mechanism of the high sensitivity differential magnetic field sensor. Further, the authors report for the data showing the possibility for realizing a voltage controlled magnetic field. The sensor works on the following principle. A constant voltage is applied to the ring section of the sensor at the resonance frequency which induces magnetic field in the dot section. If an external magnetic object is brought in the vicinity of the dot section, then the resulting differential magnetic field induces change in the voltage gain due to magnetoelectric effect.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.55.-w Magnetic instruments and components
75.80.+q Magnetomechanical effects, magnetostriction
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