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1 Jan 2007

Volume 90, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 90, 012105 (2007); http://dx.doi.org/10.1063/1.2428402 (3 pages)

Jan Bauer, Frank Fleischer, Otwin Breitenstein, Luise Schubert, Peter Werner, Ulrich Gösele, and Margit Zacharias
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Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry

Charles E. Moreau, Ion C. Moraru, Norman O. Birge, and William P. Pratt, Jr.

Appl. Phys. Lett. 90, 012101 (2007); http://dx.doi.org/10.1063/1.2424437 (3 pages) | Cited 7 times

Online Publication Date: 2 January 2007

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The authors report the spin diffusion length at 4.2 K in sputtered Ni of lsfNi = 21±2 nm, and spin-dependent scattering parameters in Ni and at Ni/Cu interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased spin valve geometry that inserts a Ni “spoiler” layer into a Py/Cu/Py spin valve. Fits to data of AΔR vs Ni thickness using Valet-Fert theory [ Phys. Rev. B 48, 7099 (1993) ] show good agreement between fit parameters for both sample geometries.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.Np Metals and alloys
75.47.De Giant magnetoresistance
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.30.Et Exchange and superexchange interactions
71.70.Gm Exchange interactions

Preparation and thermoelectric transport properties of high-performance p-type Bi2Te3 with layered nanostructure

Xinfeng Tang, Wenjie Xie, Han Li, Wenyu Zhao, Qingjie Zhang, and Masayuki Niino

Appl. Phys. Lett. 90, 012102 (2007); http://dx.doi.org/10.1063/1.2425007 (3 pages) | Cited 62 times

Online Publication Date: 2 January 2007

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High performance Bi2Te3 bulk materials with layered nanostructure have been prepared by combining melt spinning technique with spark plasma sintering, and their thermoelectric transport properties are investigated. The electrical conductivity increases greatly and the lattice thermal conductivity decreases significantly with the increase of the roller’s linear speed. These lead to a great improvement in the thermoelectric figure of merit (ZT). The maximum ZT value of 1.35 is obtained at 300 K for the sample which is prepared by melt spinning with roller linear speed of 40 m/s. Compared with the zone melting sample, it increases by 73% at the same temperature.
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81.07.Bc Nanocrystalline materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
52.77.-j Plasma applications
72.20.Pa Thermoelectric and thermomagnetic effects
73.63.Bd Nanocrystalline materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Temperature dependence of terahertz emission from InMnAs

Hui Zhan, Jason Deibel, Jonathan Laib, Chanjuan Sun, Junichiro Kono, Daniel M. Mittleman, and Hiro Munekata

Appl. Phys. Lett. 90, 012103 (2007); http://dx.doi.org/10.1063/1.2425024 (3 pages) | Cited 1 time

Online Publication Date: 2 January 2007

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We have studied the terahertz radiation emitted by the dilute magnetic semiconductor InMnAs under femtosecond laser illumination, as a function of temperature. We observe a reversal of the polarity of the emitted terahertz field as the temperature is decreased, in both p-type and n-type materials. This effect is not observed in p-InAs. A competition between two oppositely directed currents, the photo-Dember current and the surface-field-induced current, can explain the observed polarity reversal. In contrast to nonmagnetic materials, these two currents are of comparable magnitude because the Mn impurity substantially reduces the carrier mobility in dilute magnetic semiconductors.
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75.50.Pp Magnetic semiconductors
78.70.Gq Microwave and radio-frequency interactions
72.80.Ey III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
72.40.+w Photoconduction and photovoltaic effects

Ultrahigh sensitivity Hall effect in magnetic multilayers

Yun Zhu and J. W. Cai

Appl. Phys. Lett. 90, 012104 (2007); http://dx.doi.org/10.1063/1.2426896 (3 pages) | Cited 10 times

Online Publication Date: 2 January 2007

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Pt-based ferromagnetic alloy thin films are known to exhibit very large extraordinary Hall effect (EHE) with maximum Hall slope around 20 μΩ cm/T at room temperature for optimum Fe–Pt alloy films. The authors report features of the EHE observed in Fe/Pt and Co0.9Fe0.1/Pt multilayers. For Fe/Pt multilayers, the room temperature Hall slope is comparable with that of Fe–Pt alloy thin films over a broad sublayer thickness range. For Co0.9Fe0.1/Pt multilayers, the Hall slope increases by tens of times, reaching 545 μΩ cm/T at room temperature through choosing appropriate sublayer thickness and the number of Co0.9Fe0.1/Pt bilayers. While keeping good linearity, the EHE sensor made of Co0.9Fe0.1/Pt multilayers has field sensitivity of up to 1200 V/A T, appreciably higher than the sensitivity of semiconductor Hall sensors commonly used. Besides, the dynamic field range can be varied in EHE sensors with compound multilayers of Co0.9Fe0.1/Pt and Fe/Pt. The great enhancement in Hall slope (or sensitivity) and the adjustable operation field range are realized via manipulation of the perpendicular interface anisotropy and shape anisotropy in the multilayers.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.50.Bb Fe and its alloys
75.30.Gw Magnetic anisotropy

Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy

Jan Bauer, Frank Fleischer, Otwin Breitenstein, Luise Schubert, Peter Werner, Ulrich Gösele, and Margit Zacharias

Appl. Phys. Lett. 90, 012105 (2007); http://dx.doi.org/10.1063/1.2428402 (3 pages) | Cited 16 times

Online Publication Date: 3 January 2007

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Single undoped Si nanowires were electrically characterized. The nanowires were grown by molecular-beam epitaxy on n+ silicon substrates and were contacted by platinum/iridium tips. I-V curves were measured and electron beam induced current investigations were performed on single nanowires. It was found that the nanowires have an apparent resistivity of 0.85 Ω cm, which is much smaller than expected for undoped Si nanowires. The conductance is explained by hopping conductivity at the Si–SiO2 interface of the nanowire surface.
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73.63.Nm Quantum wires
72.20.Ee Mobility edges; hopping transport
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Highly reflective low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer

Ho Won Jang, Jun Ho Son, and Jong-Lam Lee

Appl. Phys. Lett. 90, 012106 (2007); http://dx.doi.org/10.1063/1.2430405 (3 pages) | Cited 10 times

Online Publication Date: 3 January 2007

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A metallization scheme with high reflectance and smooth surface morphology has been developed for obtaining low resistance Ohmic contacts on p-type GaN. Excellent Ohmic characteristics with a specific contact resistivity as low as 9.0×10−6 Ω cm2 were obtained by annealing evaporated Ni (10 Å)/Ag (1500 Å)/Mg (500 Å) contact at 450 °C for 2 min in O2 ambient. Additionally, a high reflectance over 80% was observed in the 400–500 nm wavelength range. The Mg overlayer suppressed excessive incorporation of oxygen into the Ni and Ag layers during oxidation annealing, leading to high reflectance and smooth surface quality of the Ohmic contact.
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73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Cg Contact resistance, contact potential
61.72.Cc Kinetics of defect formation and annealing

Unambiguous identification of the PL-I9 line in zinc oxide

S. Müller, D. Stichtenoth, M. Uhrmacher, H. Hofsäss, C. Ronning, and J. Röder

Appl. Phys. Lett. 90, 012107 (2007); http://dx.doi.org/10.1063/1.2430483 (3 pages) | Cited 12 times

Online Publication Date: 3 January 2007

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Radioactive 111In atoms implanted into zinc oxide (ZnO) single crystals occupy substitutional Zn lattice sites after annealing to 700 °C. The respective photoluminescence (PL) spectra of the samples were monitored while the donor In decayed into stable and isolectronic Cd. The commonly labeled PL-I9 line could be clearly assigned to excitons bound to the donor In. An arising luminescence band centered at 2.85 eV was observed with the characteristic lifetime of the isotope, and the origin could be identified as levels of the isoelectronic Cd impurities.
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78.55.Et II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes

T. A. Emadi, T. Bryllert, M. Sadeghi, J. Vukusic, and J. Stake

Appl. Phys. Lett. 90, 012108 (2007); http://dx.doi.org/10.1063/1.2430632 (3 pages) | Cited 5 times

Online Publication Date: 3 January 2007

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This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the destructive current leaking over and through the barrier is investigated for different biases and operating temperatures. The authors found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.
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85.30.Kk Junction diodes
84.32.Tt Capacitors

Energy level alignment between 9-phosphonoanthracene self-assembled monolayers and pentacene

I. G. Hill, J. Hwang, A. Kahn, C. Huang, J. E. McDermott, and J. Schwartz

Appl. Phys. Lett. 90, 012109 (2007); http://dx.doi.org/10.1063/1.2426957 (3 pages) | Cited 16 times

Online Publication Date: 3 January 2007

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The alignment of molecular energy levels between a self-assembled monolayer of 9-phosphonoanthracene formed on silicon dioxide and pentacene has been studied using photoelectron spectroscopies. The semiconducting band gap of pentacene was found to be nested within that of the monolayer, resulting in a 1.3±0.1 eV barrier for hole injection from pentacene into the monolayer. The corresponding barrier to electrons, estimated from the adiabatic highest occupied molecular orbital/lowest unoccupied molecular orbital gaps of anthracene and pentacene, is 0.3±0.2 eV. Thus, the monolayer presents a significant energetic barrier to hole injection from a pentacene overlayer, but only a small to moderate barrier to electrons.
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71.20.Rv Polymers and organic compounds
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
79.60.Fr Polymers; organic compounds
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
81.16.Dn Self-assembly

General analytical Poisson solution for undoped generic two-gated metal-oxide-semiconductor field-effect transistors

W. Z. Shangguan, T. C. Au Yeung, Z. M. Zhu, and X. Zhou

Appl. Phys. Lett. 90, 012110 (2007); http://dx.doi.org/10.1063/1.2428414 (3 pages) | Cited 2 times

Online Publication Date: 3 January 2007

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We present a general analytical solution to the Poisson equation for undoped semi-conductors. This general Poisson solution is then applied to generic dual-gate metal-oxide- semiconductor field-effect transistors (MOSFETs), unifying different types including silicon-on-insulator, and symmetric and asymmetric double-gate MOSFETs. Newton-Raphson (NR) algorithm is called to solve the resulting surface-potential equation. An exact solution is proposed making the NR algorithm computationally very efficient. While the universal initial guess can be used as an approximate solution for fast evaluation, the iterative results by NR algorithm are useful for benchmark tests.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

ZnMgO quantum dots grown by low-pressure metal organic chemical vapor deposition

Y. J. Zeng, Z. Z. Ye, Y. F. Lu, J. G. Lu, L. Sun, W. Z. Xu, L. P. Zhu, B. H. Zhao, and Y. Che

Appl. Phys. Lett. 90, 012111 (2007); http://dx.doi.org/10.1063/1.2428853 (3 pages) | Cited 7 times

Online Publication Date: 3 January 2007

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The authors report on reproducible growth of ZnMgO quantum dots (QDs) by a metal organic chemical vapor deposition method. Mg is introduced into ZnO QDs, as confirmed by x-ray photoelectron spectroscopy and photoluminescence measurements. The size, density, and optical band gap of ZnMgO QDs can be well controlled by simply modulating the growth parameters.
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81.07.Ta Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor

Leah A. Lucas, Dean M. DeLongchamp, Brandon M. Vogel, Eric K. Lin, Michael J. Fasolka, Daniel A. Fischer, Iain McCulloch, Martin Heeney, and Ghassan E. Jabbour

Appl. Phys. Lett. 90, 012112 (2007); http://dx.doi.org/10.1063/1.2404934 (3 pages) | Cited 12 times

Online Publication Date: 4 January 2007

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Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3-dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm2 V−1 s−1. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition.
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73.61.Ph Polymers; organic compounds
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.35.Cd Conducting polymers
68.55.-a Thin film structure and morphology
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments
85.30.Tv Field effect devices

Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method

Hua-Chi Cheng, Chia-Fu Chen, and Chien-Yie Tsay

Appl. Phys. Lett. 90, 012113 (2007); http://dx.doi.org/10.1063/1.2404590 (3 pages) | Cited 69 times

Online Publication Date: 4 January 2007

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Top-gate thin film transistors with n-type ZnO active channel were performed under 230 °C. Especially, ZnO film was deposited by a combined method of sol-gel and chemical bath deposition without any preactivation for film growth. Silicon nitride and indium tin oxide were used as the gate insulator and the conducting electrodes (source, drain, and gate). These transistors were highly transparent in the visible spectrum, with transmittance as high as 75% to approximately 85% at wavelength from 500 to 700 nm. The optimum device has field-effect mobility of 0.67 cm2/V s and an on-off ratio more than 107.
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85.30.Tv Field effect devices
85.40.Sz Deposition technology

Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

C.-Y. Peng, F. Yuan, C.-Y. Yu, P.-S. Kuo, M. H. Lee, S. Maikap, C.-H. Hsu, and C. W. Liu

Appl. Phys. Lett. 90, 012114 (2007); http://dx.doi.org/10.1063/1.2400394 (3 pages) | Cited 7 times

Online Publication Date: 4 January 2007

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The ultrathin strained Si0.2Ge0.8 quantum well channel ( ∼ 5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2Ge0.8 channel reveals an ∼ 3.2 times hole current enhancement and an ∼ 3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2Ge0.8 channel.
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73.63.Hs Quantum wells
72.20.Fr Low-field transport and mobility; piezoresistance
68.65.Fg Quantum wells

High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy

Y. Lin, J. A. Carlin, A. R. Arehart, A. M. Carlin, and S. A. Ringel

Appl. Phys. Lett. 90, 012115 (2007); http://dx.doi.org/10.1063/1.2430403 (3 pages) | Cited 2 times

Online Publication Date: 5 January 2007

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In0.8Al0.2As/InAs heterostructures were grown on virtual InAs substrates consisting of a relaxed InAsyP1−y step-graded buffer grown on InP by molecular-beam epitaxy. Hall measurements revealed the presence of a high-mobility two-dimensional electron gas within the relaxed InAs layer, with a peak electron mobility of 133 000 cm2/V s at 25 K. In contrast, identical InAlAs/InAs heterostructures grown directly on InAs buffers on InP showed only bulk transport characteristics. A combination of transport modeling and electron microscopy demonstrates that reduced dislocation scattering in the channel region is responsible for observing the two-dimensional transport within the relaxed InAs on graded InAsP. These results demonstrate the potential of achieving ultrahigh-speed InAs based high electron mobility transistors using relaxed, virtual InAs substrates on InP.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Fr Low-field transport and mobility; piezoresistance
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Atomic ordering effect of quantum dots embedded in InGaN/GaN multiquantum well structures

Keunjoo Kim

Appl. Phys. Lett. 90, 012116 (2007); http://dx.doi.org/10.1063/1.2430486 (3 pages) | Cited 2 times

Online Publication Date: 5 January 2007

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The authors have studied the micro-Raman analysis on the InGaN/GaN multiquantum well structures grown by metal organic chemical vapor deposition. For the quantum well structure with the trapezoidal-type, Raman vibration modes at the region of 610.4–640.6 cm−1 on the c(0001) plane and 210 cm−1 on the a(0001) plane were observed. These modes provide the atomically ordered superlattice structures of InGaN quantum dot formation of the wurtzite structures of Ga1In2N3 alloys corresponding to the In composition of x = 0.67. The formation of quantum dots around the quantum well region was observed in the highly resolved transmission electron microscopic image.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.30.Fs III-V and II-VI semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Efficient plastic scintillators utilizing phosphorescent dopants

I. H. Campbell and B. K. Crone

Appl. Phys. Lett. 90, 012117 (2007); http://dx.doi.org/10.1063/1.2430683 (3 pages) | Cited 3 times

Online Publication Date: 5 January 2007

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The authors demonstrate improved light yield from plastic scintillators utilizing a phosphorescent dopant to collect both singlet and triplet excitations created by ionizing radiation. They specifically considered poly(vinyltoluene) and poly(9-vinylcarbazole) doped with an Ir phosphor. They present the spectral, temporal, and integrated yield responses as a function of dopant concentration to pulses of 10 keV electrons. Both doped plastics yield a maximum light output of ∼ 200% of anthracene with decay times <850 ns. High light yield was obtained for Ir element fractions up to ∼ 10 wt %, implying that these scintillators may be useful for gamma detection.
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29.40.Mc Scintillation detectors

Recombination-mechanism dependence of transport and light emission of ambipolar long-channel carbon-nanotube field-effect transistors

Chi-Ti Hsieh, D. S. Citrin, and P. P. Ruden

Appl. Phys. Lett. 90, 012118 (2007); http://dx.doi.org/10.1063/1.2429029 (3 pages) | Cited 4 times

Online Publication Date: 5 January 2007

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The transport properties of ambipolar long-channel carbon-nanotube field-effect transistors are calculated in the framework of a diffusive-transport model. The effects associated with radiative and nonradiative recombinations of injected electrons and holes in the channel are considered, and the spatial dependence of the recombination profile on the gate and drain voltages is explored. Nonradiative recombination is shown to play a decisive role in the transport characteristics. The emitted light spot size is predicted to exhibit sensitive dependence on the nonradiative recombination mechanism. Moreover, the local electric field reaches a maximum but remains relatively small inside the recombination region.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Elucidation of the electron injection mechanism of evaporated cesium carbonate cathode interlayer for organic light-emitting diodes

Yang Li, De-Qiang Zhang, Lian Duan, Rui Zhang, Li-Duo Wang, and Yong Qiu

Appl. Phys. Lett. 90, 012119 (2007); http://dx.doi.org/10.1063/1.2429920 (3 pages) | Cited 34 times

Online Publication Date: 5 January 2007

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Vacuum evaporated Cs2CO3 has been proven to be an efficient electron injection material for organic light-emitting diodes. In our study, an improved quartz crystal microbalance method has been adopted to investigate the electron injection mechanism of evaporated Cs2CO3. It is concluded that Cs2CO3 decomposes to metallic cesium during thermal evaporation and the thin layer of metallic cesium that is deposited onto the organic layer is responsible for the enhanced electron injection. The metallic cesium mechanism reveals that the function of the Cs2CO3 interlayer is independent of the cathode metal, which has also been verified by our experiments.
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73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics

Kuan Yew Cheong, Wook Bahng, and Nam-Kyun Kim

Appl. Phys. Lett. 90, 012120 (2007); http://dx.doi.org/10.1063/1.2430308 (3 pages) | Cited 13 times

Online Publication Date: 5 January 2007

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The effects of thermal nitrided gate-oxide thickness on n-type 4H silicon-carbide-based metal-oxide-semiconductor characteristics have been reported. Seven different thicknesses of oxide (tox), ranging from 2 to 20 nm, have been investigated. It has been shown that effective oxide charge (Qeff) and total interface-trap density (Nit) have demonstrated a cyclic trend as tox is increased. These observations have been explained in the letter. Correlations of Qeff and Nit with oxide breakdown field and current transport mechanism in these oxides have also been established and explained.
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81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
73.20.At Surface states, band structure, electron density of states
84.32.Tt Capacitors
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