APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

1 Jan 2007

Volume 90, Issue 1, Articles (01xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 012105 (2007); http://dx.doi.org/10.1063/1.2428402 (3 pages)

Jan Bauer, Frank Fleischer, Otwin Breitenstein, Luise Schubert, Peter Werner, Ulrich Gösele, and Margit Zacharias
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

K. Matsuda, S. V. Nair, H. E. Ruda, Y. Sugimoto, T. Saiki, and K. Yamaguchi

Appl. Phys. Lett. 90, 013101 (2007); http://dx.doi.org/10.1063/1.2425039 (3 pages) | Cited 4 times

Online Publication Date: 2 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report on the photoluminescence spectroscopy of a single GaSb/GaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.
Show PACS
73.21.La Quantum dots
71.35.-y Excitons and related phenomena
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Spreading of a water droplet on a vertically aligned Si nanorod array surface

J.-G. Fan and Y.-P. Zhao

Appl. Phys. Lett. 90, 013102 (2007); http://dx.doi.org/10.1063/1.2426922 (3 pages) | Cited 10 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The dynamics of spreading of a water drop on a vertically aligned Si nanorod array surface is studied with a fast charge coupled device camera. Four dynamic spreading regimes are identified, with a precursor rim advancing ahead of the contact line. The diameters of the precursor rim Dp, the precursor length δ, and the contact line Dc obey dynamic scaling laws, Dc,p∝tnc,p/2, with nc ≈ 0.216 and np ≈ 0.272, and δ ≈ t1/2. The exponents do not vary significantly with the nanorod height and are consistent with the dynamic spreading behavior on a rough or porous surface.
Show PACS
68.08.Bc Wetting

Nitrogen-mediated fabrication of transition metal-carbon nanotube hybrid materials

Seong Ho Yang, Weon Ho Shin, Jung Woo Lee, Hyun Seok Kim, Jeung Ku Kang, and Yoon Kee Kim

Appl. Phys. Lett. 90, 013103 (2007); http://dx.doi.org/10.1063/1.2428411 (3 pages) | Cited 16 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report the simple and easy method to fabricate transition-metal–carbon nanotube hybrid materials through nitrogen mediation. Ni nanoparticles were uniformly dispersed on carbon nanotubes without any pretreatment such as defect activation by strong acids or covalent functionalization processes. A theoretical study of the nitrogen-mediated mechanism using first-principles density functional theory calculations is also presented. The first-principles calculations reveal that pyridinelike nitrogen in carbon nanotubes significantly enhances the binding energy of Ni interacting with carbon nanotubes.
Show PACS
81.07.De Nanotubes
81.05.ub Fullerenes and related materials

Scanning tunneling microscopy investigations of hydrogen plasma-induced electron scattering centers on single-walled carbon nanotubes

G. Buchs, P. Ruffieux, P. Gröning, and O. Gröning

Appl. Phys. Lett. 90, 013104 (2007); http://dx.doi.org/10.1063/1.2428594 (3 pages) | Cited 10 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report on the generation of localized defects on single-walled carbon nanotubes by means of a hydrogen electron cyclotron resonance plasma. The defects have been investigated using scanning tunneling microscopy (STM) and show an apparent topographic height in the STM of 1–3 Å. In the vicinity of defects, characteristic superstructures could be observed and the patterns could be simulated using a simple model based on large momentum scattering of the valence electrons. The combination of low structural damage and high electronic activity opens the possibility to tune the electronic transport properties using such defects.
Show PACS
61.46.Fg Nanotubes
61.82.Rx Nanocrystalline materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.63.Fg Nanotubes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
73.20.At Surface states, band structure, electron density of states

Growth of single-crystalline RuO2 nanowires with one- and two-nanocontact electrical characterizations

Yee-Lang Liu, Zong-Yi Wu, Kuei-Jiun Lin, Jr-Jeng Huang, Fu-Rong Chen, Ji-Jung Kai, Yong-Han Lin, Wen-Bin Jian, and Juhn-Jong Lin

Appl. Phys. Lett. 90, 013105 (2007); http://dx.doi.org/10.1063/1.2428669 (3 pages) | Cited 13 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-crystalline RuO2 nanowires were grown by using a thermal evaporation method. A control of the sizes (width and length) and the length-to-width ratio of the nanowires were achieved by tuning the growth time. A transmission electron microscope–scanning tunneling microscope technique invoking one-nanocontact electrical characterization was adopted to determine the room-temperature resistivity ( ∼ 100 μΩ cm) of the nanowires. An e-beam lithography technique facilitating two-nanocontact measurements was performed to establish the metallic characteristic of individual nanowires. The authors found that a nanocontact may introduce high contact resistance, nonlinear current-voltage characteristics, and even semiconducting behavior in the temperature dependent resistance.
Show PACS
81.07.Vb Quantum wires
81.16.Nd Micro- and nanolithography
73.21.Hb Quantum wires
73.40.Cg Contact resistance, contact potential
73.63.Nm Quantum wires
73.63.Rt Nanoscale contacts

Ferromagnetic semiconductor nanoclusters: Co-doped Cu2O

Jiji Antony, You Qiang, Muhammad Faheem, Daniel Meyer, David E. McCready, and Mark H. Engelhard

Appl. Phys. Lett. 90, 013106 (2007); http://dx.doi.org/10.1063/1.2429018 (3 pages) | Cited 6 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
5% Co-doped cuprous oxide dilute magnetic semiconducting cluster film composed of two different sizes of crystalline nanoclusters, prepared using sputtering-aggregation technique is found to be ferromagnetic at 400 K. With the increase in average crystallite size from 4.2 to 8 nm, the coercivity increased. Magnetic field up to 2 T is applied and saturation magnetization is achieved at 3 kOe field in both cases. Cu2O phase is observed from cluster film deposited on Si wafer when analyzed using x-ray diffraction. Co in Cu2O host reveals a +2 oxidation state via x-ray photoelectron spectroscopy. Positive magnetoresistance from samples exhibits a temperature dependent decrease.
Show PACS
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
75.75.-c Magnetic properties of nanostructures
75.80.+q Magnetomechanical effects, magnetostriction

Exciton radiative lifetime in ZnO nanorods fabricated by vapor phase transport method

X. H. Zhang, S. J. Chua, A. M. Yong, H. Y. Yang, S. P. Lau, S. F. Yu, X. W. Sun, Lei Miao, Masaki Tanemura, and Sakae Tanemura

Appl. Phys. Lett. 90, 013107 (2007); http://dx.doi.org/10.1063/1.2429019 (3 pages) | Cited 32 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The exciton radiative lifetime in ZnO nanorods is studied. It is found that the exciton radiative lifetime increases with temperature as T2. Furthermore, the spectral linewidth of the photoluminescence of the ZnO nanorods also increases with temperature as T2, suggesting a linear dependence of exciton radiative lifetime on the spectral linewidth. The physics behind is that the oscillator strength of excitons at k = 0 is shared equally among all the states within the spectral linewidth and the coherence extension of an exciton decreases with temperature due to the scattering by phonons, defects, or impurities.
Show PACS
78.55.Et II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
63.20.kk Phonon interactions with other quasiparticles

One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)

Takeharu Sekiguchi, Shunji Yoshida, Kohei M. Itoh, Josef Mysliveček, and Bert Voigtländer

Appl. Phys. Lett. 90, 013108 (2007); http://dx.doi.org/10.1063/1.2426890 (3 pages) | Cited 6 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 °C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7×7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters.
Show PACS
81.16.Dn Self-assembly
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.46.-w Structure of nanoscale materials

Atomic-layer-resolved local work functions of Pb thin films and their dependence on quantum well states

Yun Qi, Xucun Ma, Peng Jiang, Shuaihua Ji, Yingshuang Fu, Jin-Feng Jia, Qi-Kun Xue, and S. B. Zhang

Appl. Phys. Lett. 90, 013109 (2007); http://dx.doi.org/10.1063/1.2403926 (3 pages) | Cited 25 times

Online Publication Date: 3 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The thickness dependence of the local work function (LWF) and its relationship with the quantum well states (QWSs) are studied. The measured LWF shows an oscillatory behavior between adjacent layers with a period of 2 ML and, in addition, an envelope beating pattern with a period of 9 ML. Scanning tunneling spectroscopy investigations reveal that the oscillatory LWF correlates perfectly with the formation of the QWSs: the higher the occupied QWS is, the smaller the LWF is. Through the role of the LWF, this study establishes the importance of quantum size effects in thin films for surface reactions and catalysis.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.At Metal and metallic alloys
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

T. S. Ko, T. C. Wang, R. C. Gao, Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, and H. G. Chen

Appl. Phys. Lett. 90, 013110 (2007); http://dx.doi.org/10.1063/1.2430487 (3 pages) | Cited 4 times

Online Publication Date: 4 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have used metal organic chemical vapor deposition to grow InGaN/GaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c-plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.
Show PACS
81.05.Ea III-V semiconductors
81.07.St Quantum wells
78.55.Cr III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
78.67.De Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Stabilization of linear carbon structures in a solid Ag nanoparticle assembly

C. S. Casari, V. Russo, A. Li Bassi, C. E. Bottani, F. Cataldo, A. Lucotti, M. Tommasini, M. Del Zoppo, C. Castiglioni, and G. Zerbi

Appl. Phys. Lett. 90, 013111 (2007); http://dx.doi.org/10.1063/1.2430676 (3 pages) | Cited 20 times

Online Publication Date: 4 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Linear sp carbon nanostructures are gathering interest for the physical properties of one-dimensional systems. At present, the main obstacle to the synthesis and study of these systems is their instability. Here the authors present a simple method to obtain a solid system where linear sp chains (i.e., polyynes) in a silver nanoparticle assembly display a long term stability at ambient conditions. The presence and the behavior of linear carbon are investigated by surface enhanced Raman scattering exploiting the plasmon resonance of the silver nanoparticle assembly. This model system opens the possibility to investigate an intriguing form of carbon nanostructures.
Show PACS
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.30.-j Infrared and Raman spectra

Interpretation of the roughness for a competitive columnar growth

E. Rodríguez-Cañas, E. Vasco, J. L. Sacedón, and J. A. Aznárez

Appl. Phys. Lett. 90, 013112 (2007); http://dx.doi.org/10.1063/1.2388148 (3 pages) | Cited 2 times

Online Publication Date: 4 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The decomposition of the surface morphology of films into well-defined elements, which are spatially distributed, allows us to obtain a versatile set of parameters to describe the element shape. The roughness is explicitly expressed in terms of such shape parameters. Based on that, the thickness dependence of the resulting roughness for a competitive columnar growth of evaporated Au[111] thin films was predicted, exhibiting a good agreement with experimental data. The roughness expression is subsequently generalized to a wider set of functional systems with attractive morphologies. The decomposition method proposed here is thus revealed as a promising surface-analysis tool.
Show PACS
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Ultraprecise microreproduction of a three-dimensional artistic sculpture by multipath scanning method in two-photon photopolymerization

Dong-Yol Yang, Sang Hu Park, Tae Woo Lim, Hong-Jin Kong, Shin Wook Yi, Hyun Kwan Yang, and Kwang-Sup Lee

Appl. Phys. Lett. 90, 013113 (2007); http://dx.doi.org/10.1063/1.2425022 (3 pages) | Cited 24 times

Online Publication Date: 4 January 2007

Full Text: Read Online (HTML) | Download PDF


See Also: Corrected Article

Show Abstract
Ultraprecise fabrication of three-dimensional (3D) microstructures comes up to be one of the most important issues in two-photon induced photopolymerization. To date, it has been difficult to fabricate 3D microstructures without any deformation due to the surface tension between a rinsing material and solidified microstructures during the developing process: In general, the surface tension significantly affects the precision of the resulting 3D microstructures. To overcome this problem, the authors propose a simple and effective laser scanning method to reinforce the strength of 3D microstructures without loss of precision. Overall, a complex 3D artistic sculpture such as “The Thinker” was reproduced in the controlled ultraprecise form, which shows that the proposed method enables the fabrication of 3D patterns with dramatically improved precision and stability.
Show PACS
81.16.Rf Micro- and nanoscale pattern formation
82.35.-x Polymers: properties; reactions; polymerization
42.62.-b Laser applications

Planar metal heterostructures for nanoplasmonic waveguides

Bing Wang and Guo Ping Wang

Appl. Phys. Lett. 90, 013114 (2007); http://dx.doi.org/10.1063/1.2430682 (3 pages) | Cited 11 times

Online Publication Date: 5 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors propose and numerically demonstrate a planar metal heterostructure for guiding surface plasmon polaritons (SPPs). By the analysis of the effective index method and finite-difference time-domain numerical simulations, they reveal that the planar metal heterostructure created by inlaying a Ag film, on which SPPs show a lower phase velocity, into an Al film and coating them with a uniform dielectric layer can strongly confine SPPs in the Ag region of the waveguide with 171×33 nm2 cross section and 1.76 μm propagation length. The planar metal heterostructures provide a way for constructing various nanoscale counterparts of conventional planar integrated devices such as splitters, resonators, sensors, optical switches, logical circuit, etc.
Show PACS
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Phonon characteristics and photoluminescence of bamboo structured silicon-doped boron nitride multiwall nanotubes

Shifeng Xu, Yi Fan, Jingsong Luo, Ligong Zhang, Wenquan Wang, Bin Yao, and Linan An

Appl. Phys. Lett. 90, 013115 (2007); http://dx.doi.org/10.1063/1.2429904 (3 pages) | Cited 5 times

Online Publication Date: 5 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Bamboo structured silicon-doped boron nitride multiwall nanotubes are synthesized via catalyst-assisted pyrolysis of a boron-containing polymeric precursor. The nanotubes are characterized using transmission electron microscopy, x-ray diffraction, Raman, and Fourier-transformed infrared spectroscope. The results suggest that the Si dopants cause significant changes in the structure and phonon characteristics of the nanotubes as compared to pure boron nitride nanotubes. A broad photoluminescence band ranging between 500 and 800 nm is observed from the nanotubes, which is attributed to Si dopants. Study on temperature dependence of emission intensity suggests that the thermal activation energy of the nonradiative recombination process is 35 meV.
Show PACS
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.30.Hv Other nonmetallic inorganics
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
78.67.Ch Nanotubes

Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy

D. M. Cornet, V. G. M. Mazzetti, and R. R. LaPierre

Appl. Phys. Lett. 90, 013116 (2007); http://dx.doi.org/10.1063/1.2429955 (3 pages) | Cited 26 times

Online Publication Date: 5 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the {−211} family of crystal planes for all NW diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the NW tips, while NWs with lengths less than 300 nm were completely free of stacking faults.
Show PACS
81.05.Ea III-V semiconductors
61.72.Nn Stacking faults and other planar or extended defects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.16.-c Methods of micro- and nanofabrication and processing
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.Hk Nanocrystals

Atomic force nanolithography of InP for site control growth of InAs nanostructures

H. D. Fonseca-Filho, R. Prioli, M. P. Pires, A. S. Lopes, P. L. Souza, and F. A. Ponce

Appl. Phys. Lett. 90, 013117 (2007); http://dx.doi.org/10.1063/1.2430039 (3 pages) | Cited 8 times

Online Publication Date: 5 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A combination of atomic force nanolithography and metal organic vapor phase epitaxy has been used to control the nucleation of InAs nanostructures on InP substrates. Pits with controlled width and depth were produced on InP with the use of atomic force nanolithography. The number of nucleated nanostructures depends on the applied force and is independent of the geometry of the pits. Study shows that the density of crystalline defects introduced by nanoindentation is responsible for the number of nucleated nanostructures.
Show PACS
81.07.Bc Nanocrystalline materials
81.05.Ea III-V semiconductors
81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Use of ultrasound for metal cluster engineering in ion implanted silicon oxide

Andriy Romanyuk, Peter Oelhafen, Rainer Kurps, and Viktor Melnik

Appl. Phys. Lett. 90, 013118 (2007); http://dx.doi.org/10.1063/1.2430055 (3 pages) | Cited 3 times

Online Publication Date: 5 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter presents an approach to metal cluster engineering in silicon oxide that uses ultrasound vibration applied in situ during implantation. Analysis by transmission electron microscopy has demonstrated that in situ applied acoustic vibrations result in a lowering of the clustering threshold and an increase in cluster size after subsequent annealing. The results are interpreted in terms of the interaction between ultrasonic vibrations and point defects leading to the formation of vacancy-rich regions, as determined by deuterium decoration method. The excess of vacancies in the precipitation region facilitates nucleation and stimulates cluster growth due to enhanced diffusion of metal species.
Show PACS
62.65.+k Acoustical properties of solids
61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
61.72.J- Point defects and defect clusters
66.30.J- Diffusion of impurities

Coulomb peak shifts under terahertz-wave irradiation in carbon nanotube single-electron transistors

T. Fuse, Y. Kawano, M. Suzuki, Y. Aoyagi, and K. Ishibashi

Appl. Phys. Lett. 90, 013119 (2007); http://dx.doi.org/10.1063/1.2430078 (3 pages) | Cited 5 times

Online Publication Date: 5 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have studied the effect of terahertz irradiation on single-electron transistors (SETs) based on single-wall carbon nanotubes, and have observed that the radiation generates Coulomb peak shifts. Time-resolved measurements of the terahertz response have revealed that the peak-shift signal has very long time constants, measured in seconds, and that the time trace of the signal after the terahertz irradiation is turned off deviates from a single-exponential curve. These experimental results suggest that the terahertz irradiation causes a charging process in trap states in the close vicinity of the SET, leading to a change in its effective gate voltage.
Show PACS
85.35.Kt Nanotube devices
85.35.Gv Single electron devices

Efficient field emission from Li-salt functionalized multiwall carbon nanotubes on flexible substrates

S. M. Lyth, R. A. Hatton, and S. R. P. Silva

Appl. Phys. Lett. 90, 013120 (2007); http://dx.doi.org/10.1063/1.2430091 (3 pages) | Cited 13 times

Online Publication Date: 5 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report extremely low electron field emission thresholds of 0.25 V/μm from lithium salt functionalized multiwall carbon nanotubes adhered to carbon fiber fabric. Crucially, these nanostructured field emitters are flexible, air stable, and produced via a low cost dip-processing method using an aqueous nanotube ink, whereupon the nanotubes spontaneously assemble onto a surface oxidized carbon fiber matrix to form dense mats. The very low emission threshold is rationalized in terms of the morphology of the nanotube mats and the relatively low work function of lithium salt derivated carbon nanotubes.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
61.46.Fg Nanotubes
73.30.+y Surface double layers, Schottky barriers, and work functions
85.35.Kt Nanotube devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close