APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 90 / Issue 20 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 90, 202101 (2007); http://dx.doi.org/10.1063/1.2739324 (3 pages)

Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

K. Sawano1, A. Fukumoto1, Y. Hoshi1, Y. Shiraki1, J. Yamanaka2, and K. Nakagawa2

1Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
2Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu 400-0021, Japan

View MapView Map

(Received 16 March 2007; accepted 17 April 2007; published online 15 May 2007)

Strained Si n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on the Si0.83Ge0.17 relaxed thin layer formed by ion implantation technique. Although the SiGe thickness was as small as 100 nm, the relaxation was highly enhanced thanks to the pre-ion-implantation into the Si substrate and the strained Si channel with very smooth surface was obtained. A nMOSFET was fabricated in this structure and 100% drive current improvement and 60% mobility enhancement over the control Si MOSFET were achieved. This indicates that the ion implantation technique is very promising for realization of relaxed-SiGe-based devices with very high performances.

© 2007 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

silicon, elemental semiconductors, MOSFET, ion implantation, buffer layers, carrier mobility, Raman spectra, atomic force microscopy

PACS

  • 85.30.Tv

    Field effect devices

  • 85.40.Ry

    Impurity doping, diffusion and ion implantation technology

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2739324

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    E. A. Fitzgerald, Y.-H. Xie, M. L. Green, D. Brasen, A. R. Kortan, J. Michel, Y.-J. Mii, and B. E. Weir, Appl. Phys. Lett. 59, 811 (1991)APPLAB000059000007000811000001.

    N. Sugii, K. Nakagawa, S. Yamaguchi, and M. Miyao, Appl. Phys. Lett. 75, 2948 (1999)APPLAB000075000019002948000001.

    K. Sawano, S. Koh, Y. Shiraki, N. Usami, and K. Nakagawa, Appl. Phys. Lett. 83, 4339 (2003)APPLAB000083000021004339000001.

    K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa, and N. Usami, Appl. Phys. Lett. 85, 2514 (2004)APPLAB000085000013002514000001.

    S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, J. Appl. Phys. 80, 1567 (1996)JAPIAU000080000003001567000001.


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique
  2. Scattering of electromagnetic waves in metamaterial superlattices
  3. Terahertz mixing in MgB2 microbolometers
  4. Highly efficient near-infrared organic excimer electrophosphorescent diodes
  5. Effects of alloy intermixing on the lateral confinement potential in InAs/GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy
Go to AIP Home
Copyright © American Institute of Physics
close