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14 May 2007

Volume 90, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 90, 201101 (2007); http://dx.doi.org/10.1063/1.2739308 (3 pages)

Luca Sapienza, Angela Vasanelli, Cristiano Ciuti, Christophe Manquest, Carlo Sirtori, Raffaele Colombelli, and Ulf Gennser
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Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

K. Sawano, A. Fukumoto, Y. Hoshi, Y. Shiraki, J. Yamanaka, and K. Nakagawa

Appl. Phys. Lett. 90, 202101 (2007); http://dx.doi.org/10.1063/1.2739324 (3 pages) | Cited 3 times

Online Publication Date: 15 May 2007

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Strained Si n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on the Si0.83Ge0.17 relaxed thin layer formed by ion implantation technique. Although the SiGe thickness was as small as 100 nm, the relaxation was highly enhanced thanks to the pre-ion-implantation into the Si substrate and the strained Si channel with very smooth surface was obtained. A nMOSFET was fabricated in this structure and 100% drive current improvement and 60% mobility enhancement over the control Si MOSFET were achieved. This indicates that the ion implantation technique is very promising for realization of relaxed-SiGe-based devices with very high performances.
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85.30.Tv Field effect devices
85.40.Ry Impurity doping, diffusion and ion implantation technology

Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers

Jungwoo Oh, Prashant Majhi, Chang Yong Kang, Ji-Woon Yang, Hsing-Huang Tseng, and Raj Jammy

Appl. Phys. Lett. 90, 202102 (2007); http://dx.doi.org/10.1063/1.2740108 (3 pages) | Cited 11 times

Online Publication Date: 15 May 2007

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The authors report on the thermal stability of Ge metal-oxide-semiconductor (MOS) devices. Ge MOS capacitors with ZrO2 high-k gate dielectric and TaN metal gates were fabricated on Ge epitaxial films. Ge MOS capacitors exhibited a very low gate leakage current density of ∼ 1×10−6 A/cm2 with a capacitance equivalent thickness of 13 Å. The excellent electrical characteristics, however, degraded when Ge/ZrO2 gate stacks were subsequently annealed at elevated temperatures that are potentially used for transistor fabrication. The thermal degradation was due primarily to the formation of interfacial Ge oxides. Ge oxidation temperature was identified using surface analysis and correlated with electrical characteristics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

Electron mobility in tris(8-hydroxyquinoline)aluminum (Alq3) films by transient electroluminescence from single layer organic light emitting diodes

Hoon Park, Dong-Sub Shin, Hee-Sung Yu, and Hee-Baik Chae

Appl. Phys. Lett. 90, 202103 (2007); http://dx.doi.org/10.1063/1.2734386 (3 pages) | Cited 13 times

Online Publication Date: 15 May 2007

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Single layer devices of indium tin oxide/Alq3/Al were constructed with varying the active areas from 1 to 8 mm2 and the thicknesses from 30 to 50 nm. Average electric field across the Alq3 layer during the transient state was estimated from the accumulated charges at the interfaces of the devices. The electron mobility could thus be calculated by assuming that the injected charge carriers moved under the average electric field rather than the instantaneous field. The resulting mobility could be determined uniquely in a device thickness. The electron drift mobility was shown to behave similarly to the time-of-flight results.
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85.60.Jb Light-emitting devices

Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

Ryuichi Masutomi, Masayuki Hio, Toshimitsu Mochizuki, and Tohru Okamoto

Appl. Phys. Lett. 90, 202104 (2007); http://dx.doi.org/10.1063/1.2740579 (3 pages) | Cited 6 times

Online Publication Date: 15 May 2007

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The authors have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at in situ cleaved surfaces of p-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag coverage and the annealing temperature in the range of 15–40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.
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73.43.-f Quantum Hall effects
61.72.Cc Kinetics of defect formation and annealing
72.20.Fr Low-field transport and mobility; piezoresistance
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Ey III-V semiconductors

Microscopic aspects of the variations in the retention times of dynamic random access memory

Blair R. Tuttle and Roy Meade

Appl. Phys. Lett. 90, 202105 (2007); http://dx.doi.org/10.1063/1.2734149 (3 pages) | Cited 1 time

Online Publication Date: 16 May 2007

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The authors have examined the retention time of memory bits. Silicon dangling bond defects are shown to be consistent with retention time observations. Interactions between hydrogen and silicon dangling bond defect complexes are calculated for several model cases using first-principles density functional theory. Variable retention time is explained in terms of hydrogen interacting with a silicon dangling bond defect at the Si–SiO2 interface.
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84.30.Sk Pulse and digital circuits

Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

Kenta Arima, Hideyuki Hara, Junji Murata, Takeshi Ishida, Ryota Okamoto, Keita Yagi, Yasuhisa Sano, Hidekazu Mimura, and Kazuto Yamauchi

Appl. Phys. Lett. 90, 202106 (2007); http://dx.doi.org/10.1063/1.2739084 (3 pages) | Cited 11 times

Online Publication Date: 16 May 2007

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The authors present a method for flattening SiC surfaces with Pt as a catalyst in HF solution. The mechanism for flattening SiC surfaces is discussed. The flattened 4H-SiC(0001) surface is composed of alternating wide and narrow terraces with single-bilayer-height steps, which are induced by the rate difference of the catalytic reactions between adjacent terraces. Scanning tunneling microscopy images reveal a 1×1 phase on the terraces. The 1×1 phase is composed of coexisting of F- and OH-terminated Si atoms, which originate from the polarization of the underlying Si–C bonds.
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81.65.Cf Surface cleaning, etching, patterning
68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
82.45.-h Electrochemistry and electrophoresis
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Electrode influence on the transport through SrRuO3/Cr-doped SrZrO3/metal junctions

Hwan-Soo Lee, James A. Bain, Sukwon Choi, and Paul A. Salvador

Appl. Phys. Lett. 90, 202107 (2007); http://dx.doi.org/10.1063/1.2739081 (3 pages) | Cited 9 times

Online Publication Date: 17 May 2007

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The authors have investigated the charge transport properties across heterostructures built from a SrRuO3 bottom electrode, a Cr-doped SrZrO3 perovskite film, and different top electrode metals (Pt, Cu, Ag, Cr, Mg, and SrRuO3). The resistances of such junctions were dependent on the top metal and ranging between 1 and 1000 kΩ. The observed I-V curves were modeled with the equation I(V) = aV+bV2, where the variation of a with metal type was related to the work function while the variation of b was related to the oxygen affinity of the metal, consistent with space charge limited conduction through a defected interface.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.50.Fq High-field and nonlinear effects
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes

J. J. H. Gielis, P. J. van den Oever, M. C. M. van de Sanden, and W. M. M. Kessels

Appl. Phys. Lett. 90, 202108 (2007); http://dx.doi.org/10.1063/1.2740474 (3 pages) | Cited 8 times

Online Publication Date: 17 May 2007

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The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown.
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81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
78.66.Db Elemental semiconductors and insulators
78.66.Jg Amorphous semiconductors; glasses

Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

Katsunori Danno, Daisuke Nakamura, and Tsunenobu Kimoto

Appl. Phys. Lett. 90, 202109 (2007); http://dx.doi.org/10.1063/1.2740580 (3 pages) | Cited 36 times

Online Publication Date: 17 May 2007

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Carrier lifetimes in 4H-SiC epilayers are investigated by differential microwave photoconductivity decay measurements. When the Z1/2 concentration is higher than 1013 cm−3, the Z1/2 center works as a recombination center. In this case, carrier lifetimes show positive dependence on the injection level (number of irradiated photons). On the other hand, other recombination processes such as surface recombination limit the lifetime when the Z1/2 concentration is lower than 1013 cm−3. In this case, carrier lifetimes have decreased by increasing the injection level. By controlling the Z1/2 concentration by low-energy electron irradiation, the lifetime control has been achieved.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.80.Fe Electron and positron radiation effects
73.50.Pz Photoconduction and photovoltaic effects
73.61.Le Other inorganic semiconductors
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