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14 May 2007

Volume 90, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 90, 201101 (2007); http://dx.doi.org/10.1063/1.2739308 (3 pages)

Luca Sapienza, Angela Vasanelli, Cristiano Ciuti, Christophe Manquest, Carlo Sirtori, Raffaele Colombelli, and Ulf Gennser
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1.5 μm band Hong-Ou-Mandel experiment using photon pairs generated in two independent dispersion shifted fibers

Hiroki Takesue

Appl. Phys. Lett. 90, 204101 (2007); http://dx.doi.org/10.1063/1.2739077 (3 pages) | Cited 12 times

Online Publication Date: 14 May 2007

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This letter reports a Hong-Ou-Mandel experiment using two photon pairs in the 1.5 μm band that are generated in two independent dispersion shifted fibers. A quantum interference with 53% visibility was observed. Thanks to the narrow bandwidth of the photon pairs, the required accuracy for photon arrival time adjustment was relaxed to a few millimeters, which is a great advantage for an application to a quantum relay.
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42.81.Dp Propagation, scattering, and losses; solitons
42.50.-p Quantum optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
03.67.Hk Quantum communication

Finite element analysis of the effect of electrode resistivity on resistivity measurement in a diamond anvil cell

Xiaowei Huang, Chunxiao Gao, Dongmei Zhang, Ming Li, Chunyuan He, Aimin Hao, Cuiling Yu, Chong Sang, Cailong Liu, Yue Wang, Rui Guan, Dongmei Li, Guangtian Zou, and Yanzhang Ma

Appl. Phys. Lett. 90, 204102 (2007); http://dx.doi.org/10.1063/1.2739086 (3 pages) | Cited 2 times

Online Publication Date: 15 May 2007

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The effect of electrode resistivity on the in situ resistivity measurement in a diamond anvil cell was studied using finite element analysis. The theoretical analysis reveals that the origin of significant error for a thin sample is mainly caused by the resistivity difference between the electrodes and the sample. The authors found that reducing such resistivity differences can improve the accuracy. The result shows that the van der Pauw method [ L. J. van der Pauw, Philips Tech. Rev. 20, 220 (1958) ] can provide more accurate results for thin samples compared with the four-point probe method. This approach provides means to simulate actual experiments and to eliminate the measurement error.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
02.70.Dh Finite-element and Galerkin methods

Dynamic surfing and trapping of charged colloids in a traveling-wave electrophoretic ratchet

Hsien-Hung Wei

Appl. Phys. Lett. 90, 204103 (2007); http://dx.doi.org/10.1063/1.2740176 (3 pages) | Cited 2 times

Online Publication Date: 16 May 2007

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The author theoretically demonstrates a gel-free electrophoretic ratchet under a nearly unidirectional traveling electric field whose wavelength is much longer than the transverse dimension. Because of length scale separation, a charged particle can migrate synchronously or asynchronously with the field as if it was surfing on the wave. The author shows, with a dynamical phase portrait, that if the wave speed is slower than the characteristic electrophoretic velocity, a suspension of charged particles can be trapped into distinct particle bands synchronizing with the field. A tunable sieving capability of this ratchet provides the potential for continuous fractionation and characterization of colloidal suspensions.
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82.45.-h Electrochemistry and electrophoresis
82.70.Dd Colloids
82.70.Kj Emulsions and suspensions

Sound field inside acoustically levitated spherical drop

W. J. Xie and B. Wei

Appl. Phys. Lett. 90, 204104 (2007); http://dx.doi.org/10.1063/1.2741051 (3 pages) | Cited 5 times

Online Publication Date: 17 May 2007

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The sound field inside an acoustically levitated small spherical water drop (radius of 1 mm) is studied under different incident sound pressures (amplitude p0 = 2735–5643 Pa). The transmitted pressure ptr in the drop shows a plane standing wave, which varies mainly in the vertical direction, and distributes almost uniformly in the horizontal direction. The maximum of ptr is always located at the lowermost point of the levitated drop. Whereas the secondary maximum appears at the uppermost point if the incident pressure amplitude p0 is higher than an intermediate value (3044 Pa), in which there exists a pressure nodal surface in the drop interior. The value of the maximum ptr lies in a narrow range of 2489–3173 Pa, which has a lower limit of 2489 Pa when p0 = 3044 Pa. The secondary maximum of ptr is rather small and only remarkable at high incident pressures.
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62.60.+v Acoustical properties of liquids
43.35.Ei Acoustic cavitation in liquids

High-angular-resolution electron energy loss spectroscopy of hexagonal boron nitride

R. Arenal, M. Kociak, and N. J. Zaluzec

Appl. Phys. Lett. 90, 204105 (2007); http://dx.doi.org/10.1063/1.2740185 (3 pages) | Cited 11 times

Online Publication Date: 18 May 2007

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High-angular-resolution electron energy loss spectroscopy (EELS) is used to study the anisotropic behavior of the boron and nitrogen K ionization edges in h-BN. This work makes significant progress toward improving the anisotropy measurements. The authors show experimentally by EELS the vanishment of the π* peak existing in these K edges in agreement with electronic structure calculations and previous soft x-ray absorption spectroscopy measurements.
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79.20.Uv Electron energy loss spectroscopy
71.20.Nr Semiconductor compounds
78.70.Dm X-ray absorption spectra

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Y. N. Saripalli, L. Pei, T. Biggerstaff, S. Ramachandran, G. J. Duscher, M. A. L. Johnson, C. Zeng, K. Dandu, Y. Jin, and D. W. Barlage

Appl. Phys. Lett. 90, 204106 (2007); http://dx.doi.org/10.1063/1.2741123 (3 pages) | Cited 2 times

Online Publication Date: 18 May 2007

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Contact selected area regrowth of GaN was performed by metal organic chemical vapor deposition using a silicon nitride dielectric hard mask to define plasma etched recesses and to define source-drain regions. A low temperature regrowth process at 750–850 °C was adopted to limit lateral overgrowth. High resolution electron microscopy images and selected area diffraction confirmed the regrowth selectivity and revealed that the low temperature regrown GaN is epitaxial and has a wurtzite crystal structure. I-V characteristics of the fabricated metal oxidesemiconductor field effect transistor show enhancement mode operation.
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85.30.Tv Field effect devices
85.40.Sz Deposition technology
73.40.Ns Metal-nonmetal contacts
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