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21 May 2007

Volume 90, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 90, 213501 (2007); http://dx.doi.org/10.1063/1.2742294 (3 pages)

Jong-Hyun Ahn, Hoon-Sik Kim, Etienne Menard, Keon Jae Lee, Zhengtao Zhu, Dae-Hyeong Kim, Ralph G. Nuzzo, John A. Rogers, Islamshah Amlani, Vadim Kushner, Shawn G. Thomas, and Terrisa Duenas
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Passive photonic elements based on dielectric-loaded surface plasmon polariton waveguides

A. V. Krasavin and A. V. Zayats

Appl. Phys. Lett. 90, 211101 (2007); http://dx.doi.org/10.1063/1.2740485 (3 pages) | Cited 65 times

Online Publication Date: 21 May 2007

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The authors present full three-dimensional numerical modeling of passive photonic elements based on dielectric-loaded surface plasmon polariton waveguides (DLSPPWs). They demonstrate that at telecom wavelengths a highly confined SPP mode can be guided in a single mode DLSPPW of subwavelength cross section and estimate the achievable density of photonic integration. The size of bending and splitting photonic elements based on DLSPPW can be as small as a few micrometers with pure bend loss less than 10% (0.4 dB) and the transmission efficiency exceeding 70% (total loss of about 1.3 dB). Such DLSPPW elements are important for implementation of photonic integrated circuits, guiding optical and electric signals in the same circuitry, and lab-on-a-chip applications.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
85.60.-q Optoelectronic devices

Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback

J. Kim, P. K. Kondratko, S. L. Chuang, G. Walter, N. Holonyak, Jr., R. D. Heller, X. B. Zhang, and R. D. Dupuis

Appl. Phys. Lett. 90, 211102 (2007); http://dx.doi.org/10.1063/1.2741118 (3 pages) | Cited 3 times

Online Publication Date: 21 May 2007

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Measured modal gain spectra of the tunneling injection InP quantum-dot (QD) laser with and without an external feedback are presented to experimentally demonstrate the polarization-dependent photon-mediated carrier redistribution in the tunneling injection QD laser. The peak gain wavelength in the transverse-electric gain narrowing spectra near threshold follows the external feedback wavelength. This indicates that the carrier redistribution in the QD-coupled-quantum well structure is determined by the spectral distribution of the stimulated emission, which can be controlled by external grating.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Dj Gratings

Low threshold quantum-cascade lasers of room temperature continuous-wave operation grown by metal-organic chemical-vapor deposition

X. J. Wang, J. Y. Fan, T. Tanbun-Ek, and F.-S. Choa

Appl. Phys. Lett. 90, 211103 (2007); http://dx.doi.org/10.1063/1.2741409 (3 pages) | Cited 12 times

Online Publication Date: 21 May 2007

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Very low threshold current densities are reported from buried heterojunction quantum-cascade laser (QCL) grown by metal-organic chemical-vapor deposition at an emission wavelength of 5.07 μm. Continuous-wave operation threshold current densities as low as 0.75 and 0.83 kA/cm2, efficiencies of 1079 and 879 mW/A, and total output powers of 116 and 74 mW have been achieved for temperatures of 288 and 298 K. These cw threshold current densities are lower than all previously reported values for Fabry-Pérot QCLs. Internal loss as low as 1.84 cm−1 has been extracted; also the lowest value thus far reported in the literature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Higher nonlinear indices, Raman gain coefficients, and bandwidths in the TeO2–ZnO–Nb2O5–MoO3 quaternary glass system

Rajan Jose and Yasutake Ohishi

Appl. Phys. Lett. 90, 211104 (2007); http://dx.doi.org/10.1063/1.2741412 (3 pages) | Cited 13 times

Online Publication Date: 21 May 2007

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A quaternary glass system, TeO2–ZnO–Nb2O5–MoO3, with higher linear and nonlinear indices, third order optical susceptibility (χ3), and Raman gain coefficient and gain bandwidth is reported. The χ3 of these glasses are ∼ 80 times higher than the silica glass and 1.6 times higher than pure TeO2 glass; Raman gain coefficient is 40 times higher than the silica glass. Amplification bandwidth of one of the glasses is 1.7 times larger than the silica glass. The present glass has a glass transition temperature 80 °C lower than the previously reported tellurite showing large Raman amplification bandwidth. These features make the TeO2–ZnO–Nb2O5–MoO3 glass a potential material for photonics devices such as fiber Raman amplifiers and/or nonlinear optical signal processing devices.
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42.70.Ce Glasses, quartz
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.An Optical susceptibility, hyperpolarizability
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Time dependent density of free carriers generated by two photon absorption in silicon waveguides

Y. Liu and H. K. Tsang

Appl. Phys. Lett. 90, 211105 (2007); http://dx.doi.org/10.1063/1.2741611 (3 pages) | Cited 17 times

Online Publication Date: 21 May 2007

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Carrier diffusion and recombination are considered in calculating the time dependent density of free carriers generated by two photon absorption in silicon waveguides. The calculations are compared to experimental results from optical pump-probe measurements of the induced loss from free carrier absorption. A generalized definition of nonlinear effective length is proposed to describe the effects of nonlinear loss. The authors experimentally demonstrate that helium-ion implantation can reduce the effective carrier lifetime and report on the observation of enhanced self-phase modulation in the helium implanted silicon waveguide.
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42.79.Gn Optical waveguides and couplers
42.65.Wi Nonlinear waveguides
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Highly circularly polarized electroluminescence from organic light-emitting diodes with wide-band reflective polymeric cholesteric liquid crystal films

Soon Moon Jeong, Youko Ohtsuka, Na Young Ha, Yoichi Takanishi, Ken Ishikawa, Hideo Takezoe, Suzushi Nishimura, and Goroh Suzaki

Appl. Phys. Lett. 90, 211106 (2007); http://dx.doi.org/10.1063/1.2741603 (3 pages) | Cited 11 times

Online Publication Date: 21 May 2007

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The authors have observed highly circularly polarized electroluminescence from organic light-emitting diodes (OLEDs) using wide-band reflector consisting of three-layered left-handed polymeric cholesteric liquid crystal (PCLC) films. By simply attaching the wide-band reflective PCLC reflector to a conventional OLED, the authors obtained a high degree of circular polarization, i.e., the ratio of brightness between right- and left-handed circularly polarized electroluminescences is over 10 over the whole emission band.
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85.60.Jb Light-emitting devices
42.79.Kr Display devices, liquid-crystal devices

On-chip surface-enhanced Raman scattering detection using integrated liquid-core waveguides

Philip Measor, Leo Seballos, Dongliang Yin, Jin Z. Zhang, Evan J. Lunt, Aaron R. Hawkins, and Holger Schmidt

Appl. Phys. Lett. 90, 211107 (2007); http://dx.doi.org/10.1063/1.2742287 (3 pages) | Cited 29 times

Online Publication Date: 21 May 2007

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The authors demonstrate surface-enhanced Raman scattering (SERS) detection on an optofluidic chip. Interconnected solid- and liquid-core antiresonant reflecting optical waveguides (ARROWs) form a planar beam geometry that allows for high mode intensities along microfluidic channels containing molecules optimized for SERS. The excitation power and concentration dependence of SERS from rhodamine 6G (R6G) molecules adsorbed to silver nanoparticles were systematically studied. The data can be described by a model that takes into account the microphotonic structure. Detection sensitivity to a minimum concentration of 30 nM is found, demonstrating the suitability of ARROW-based optofluidic chips for high sensitivity detection with molecular specificity.
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42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Investigations of the light-induced scattering varied with HfO2 codoping in LiNbO3:Fe crystals

Wenbo Yan, Hongjian Chen, Lihong Shi, Shiguo Liu, and Yongfa Kong

Appl. Phys. Lett. 90, 211108 (2007); http://dx.doi.org/10.1063/1.2742290 (3 pages) | Cited 9 times

Online Publication Date: 22 May 2007

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Light-induced scattering in LiNbO3:Fe crystals codoped with different concentrations of HfO2 has been investigated. Unusual behaviors with varied HfO2 codoping are observed and explained. Li vacancies are suggested to be the main contributor to the dark conductivity of the crystal and subsequently to induce the threshold effect of the pump light intensity for the light-induced scattering. High photovoltaic field produced in the crystals is thought to be the cause of the serious light-induced scattering at high pump intensity. As a result, LiNbO3:Fe, Hf crystals exhibit an enhanced ability to suppress the light-induced scattering at moderate pump intensity.
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42.70.Gi Light-sensitive materials
61.72.S- Impurities in crystals
61.72.J- Point defects and defect clusters
72.40.+w Photoconduction and photovoltaic effects

Saturated and efficient blue phosphorescent organic light emitting devices with Lambertian angular emission

C. L. Mulder, K. Celebi, K. M. Milaninia, and M. A. Baldo

Appl. Phys. Lett. 90, 211109 (2007); http://dx.doi.org/10.1063/1.2742577 (3 pages) | Cited 17 times

Online Publication Date: 22 May 2007

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The authors employ a microcavity to optimize the color of a phosphorescent organic light emitting device (OLED) based on the-sky blue phosphor FIrpic. The output of the OLED is filtered by scattering media to correct the angular emission intensity profile and eliminate the angular dependence of the color. With a holographic diffuser as the scattering medium, the microcavity OLED achieves an external quantum efficiency of (5.5±0.6)%, as compared to (3.8±0.4)% for a conventional structure. The color coordinates of the microcavity OLED with holographic diffuser are (x,y) = (0.116±0.004,0.136±0.010) with minimal angular color shift and a nearly ideal Lambertian angular emission profile.
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85.60.Jb Light-emitting devices

Proposal and analysis of a silica fiber with large and thermodynamically stable second order nonlinearity

Yong Xu, Anbo Wang, James R. Heflin, and Zhiwen Liu

Appl. Phys. Lett. 90, 211110 (2007); http://dx.doi.org/10.1063/1.2740472 (3 pages) | Cited 4 times

Online Publication Date: 23 May 2007

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The authors propose a general approach that can produce a silica fiber with large and thermodynamically stable second order nonlinearity. They estimate that it is possible to achieve second harmonic generation efficiency of more than 10% in such a nonlinear fiber with a length of a few hundred microns. By maintaining a high degree of spatial symmetry, the proposed nonlinear fiber can naturally generate polarization entangled photon pairs, a physical object of enormous significance for quantum information technology.
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42.81.-i Fiber optics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
03.67.Mn Entanglement measures, witnesses, and other characterizations

Effect of insulating-nanoparticles addition on ion current and voltage-holding ratio in nematic liquid crystal cells

Pei-Shiang Chen, Chiu-Chung Huang, Yung-Wei Liu, and Chih-Yu Chao

Appl. Phys. Lett. 90, 211111 (2007); http://dx.doi.org/10.1063/1.2740581 (3 pages) | Cited 9 times

Online Publication Date: 23 May 2007

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The transient currents induced by an applied direct voltage (dc) electric field have been measured liquid-crystal cells in nematic phase. The experimental results show that the addition of insulating nanoparticles, such as diamond powders, leads to a reduction of the ion concentration in cells so as to drastically reduce the transient currents and threshold voltage. Simultaneously, a high voltage-holding ratio (VHR) in doped cells is observed. Such a high VHR, in comparison with nematic liquid crystals doped by carbon nanotubes, is a superior feature for future liquid crystal display applications.
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61.30.-v Liquid crystals

Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm

Chuanyu Jia, Tongjun Yu, Sen Mu, Yaobo Pan, Zhijian Yang, Zhizhong Chen, Zhixin Qin, and Guoyi Zhang

Appl. Phys. Lett. 90, 211112 (2007); http://dx.doi.org/10.1063/1.2741607 (3 pages) | Cited 13 times

Online Publication Date: 24 May 2007

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Polarization-resolved edge-emitting electroluminescence of InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) from 395 to 455 nm was measured. Polarization ratio decreased from 3.2 of near-ultraviolet LEDs (395 nm) to 1.9 of blue LEDs (455 nm). Based on TE mode dominant emissions in InGaN/GaN MQWs, compressive strain in well region favors TE mode, indium induced quantum-dot-like behavior leads to an increased TM component. As wavelength increased, indium enhanced quantum-dot-like behavior became obvious and E‖C electroluminescence signal increased thus lower polarization ratio. Electroluminescence spectrum shifts confirmed that quantum dotlike behaviors rather than strain might be dominant in modifying luminescence mode of InGaN/GaN MQWs from near ultraviolet to blue.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Fractal independently tunable multichannel filters

Shao-Wei Wang, Xiaoshuang Chen, Wei Lu, Ming Li, and Haiqian Wang

Appl. Phys. Lett. 90, 211113 (2007); http://dx.doi.org/10.1063/1.2743380 (3 pages) | Cited 13 times

Online Publication Date: 24 May 2007

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A simple fractal rule has been presented in this letter for the construction of one-dimensional photonic crystals with orthogonal defect states, which can be used as independently tunable multichannel filters. Each channel of the filters can be tuned independently. It overcomes the difficulty and provides an easy way for the design of multichannel filter with specific channels. In order to prove the validity of such a fractal rule, a series of two-channel filters have been fabricated by using a low frequency magnetron sputtering system. The experimental results agree with theoretical ones very well.
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42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials
05.45.Df Fractals

Temperature stability of single-photon emission from InGaAs quantum dots in photonic crystal nanocavities

W.-Y. Chen, H.-S. Chang, T. M. Hsu, T.-P. Hsieh, and J.-I. Chyi

Appl. Phys. Lett. 90, 211114 (2007); http://dx.doi.org/10.1063/1.2743398 (3 pages) | Cited 4 times

Online Publication Date: 24 May 2007

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This study demonstrates the feasibility to 60 K operation of photonic crystal (PC) nanocavities for self-assembled InGaAs quantum dots (QDs) in single-photon applications. With the proper quality factor and small mode volume, this PC nanocavity exhibits excellent spontaneous emission enhancement and high thermal stability. Measuring the second-order correlation function of single QD emission yields clear photon antibunching with a small timing jitter of ∼ 1 ns, which is maintained from T = 7 to 60 K. These results demonstrate that PC nanocavities with an appropriate quality factor and mode volume are well suitable for developing thermal-stable single-photon sources.
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78.67.Hc Quantum dots
78.66.Fd III-V semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
42.70.Qs Photonic bandgap materials
81.16.Dn Self-assembly
42.50.Dv Quantum state engineering and measurements

Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes

A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii

Appl. Phys. Lett. 90, 211115 (2007); http://dx.doi.org/10.1063/1.2741147 (3 pages) | Cited 8 times

Online Publication Date: 24 May 2007

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Room temperature electroluminescence in the midinfrared near 4 μm is reported from GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy. Comparison of the electro- and photoluminescence revealed that light is generated on the p side of the diode. The energy shift (24 meV) is consistent with band gap narrowing and recombination via band tail states due to the Zn doping (1×1018 cm−3) in the p layer of the structure. The temperature dependent behavior of the luminescence and the improved emission intensity was attributed to recombination from localized states arising from electrostatic potential fluctuations due to compositional inhomogeneities in these alloys.
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85.60.Jb Light-emitting devices
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