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28 May 2007

Volume 90, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 90, 221101 (2007); http://dx.doi.org/10.1063/1.2743884 (3 pages)

Siyka I. Shopova, Hongying Zhou, Xudong Fan, and Po Zhang
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Strain and in-plane orientation effects on the ferroelectricity of (111)-oriented tetragonal Pb(Zr0.35Ti0.65)O3 thin films prepared by metal organic chemical vapor deposition

Hiroki Kuwabara, Nicolas Menou, and Hiroshi Funakubo

Appl. Phys. Lett. 90, 222901 (2007); http://dx.doi.org/10.1063/1.2743748 (3 pages) | Cited 9 times

Online Publication Date: 29 May 2007

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The growth and characterization of epitaxial (111)-oriented Pb(Zr0.35Ti0.65)O3 films deposited by metal organic chemical vapor deposition on (100)-oriented silicon substrates [(111)SrRuO3‖(111)Pt‖(100)yttria-stabilized zirconia‖(100)Si] are reported. The orientation, microstructure, and electric properties of these films are compared to those of fiber-textured highly (111)-oriented lead zirconate titanate (PZT) films deposited on (111)SrRuO3/(111)Pt/TiOx/SiO2/(100)Si substrates and epitaxial (111)-oriented PZT films deposited on (111)SrRuO3‖(111)SrTiO3 substrates. The ferroelectric properties of these films are not drastically influenced by the in-plane orientation of the film and by the strain state imposed by the underlying substrate. These results support the use of fiber-textured highly (111)-oriented films in highly stable ferroelectric capacitors.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

Z. X. Cheng, X. L. Wang, S. X. Dou, K. Ozawa, and H. Kimura

Appl. Phys. Lett. 90, 222902 (2007); http://dx.doi.org/10.1063/1.2743910 (3 pages) | Cited 10 times

Online Publication Date: 29 May 2007

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The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi3.25Sm0.75V0.02T2.98O12 thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated temperature, and the coercive field decreased at the same time due to the strong domain depinning process at higher temperature. This film shows almost a polarization-fatigue-free character at room temperature, but the aggregation and diffusion of the thermally activated long-range oxygen vacancies caused strong domain pinning, and thus a poor fatigue resistance was observed at elevated temperature.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
61.72.J- Point defects and defect clusters

Recovery of remanent polarization of poly(vinylidene fluoride-co-trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

Youn Jung Park, Seok Ju Kang, Cheolmin Park, Euntaek Woo, Kyusoon Shin, and Kap Jin Kim

Appl. Phys. Lett. 90, 222903 (2007); http://dx.doi.org/10.1063/1.2743389 (3 pages) | Cited 14 times

Online Publication Date: 30 May 2007

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Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 μC/cm2 was obtained after annealing up to 185 °C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) ( ∼ 150 °C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field.
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77.22.Ej Polarization and depolarization
77.84.Jd Polymers; organic compounds
77.80.-e Ferroelectricity and antiferroelectricity
77.65.-j Piezoelectricity and electromechanical effects
81.40.Gh Other heat and thermomechanical treatments

Similarity between the first ionized state of the oxygen vacancy double donor in tantalum oxide and the first ionized state of the cadmium vacancy double acceptor in cadmium sulfide

W. S. Lau

Appl. Phys. Lett. 90, 222904 (2007); http://dx.doi.org/10.1063/1.2744485 (3 pages) | Cited 3 times

Online Publication Date: 30 May 2007

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The author suggests that the first ionized state of the oxygen vacancy double donor (VO+) in Ta2O5 behaves like an electron trap with an electron-repulsive energy barrier, resulting in a small electron capture cross section, especially at low temperature. This is similar to the first ionized state of the cadmium vacancy double acceptor (VCd−) in CdS. Single donors or acceptors do not have such a problem. With the help of this theory, the author proposes a two-scan zero-bias thermally stimulated current method: scan 1 for the detection of VO+ and scan 2 for other defect states.
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71.55.Gs II-VI semiconductors
61.72.J- Point defects and defect clusters

Pr2O3 on Si(001): A commensurate interfacial layer overgrown by silicate

L. Libralesso, T.-L. Lee, and J. Zegenhagen

Appl. Phys. Lett. 90, 222905 (2007); http://dx.doi.org/10.1063/1.2743945 (3 pages) | Cited 3 times

Online Publication Date: 30 May 2007

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The growth of Pr2O3 on Si(001) for film thicknesses up to 3 nm was studied in situ in ultrahigh vacuum without exposure to ambient by x-ray reflectivity, grazing incident x-ray diffraction, and angle-resolved x-ray photoelectron spectroscopy using synchrotron radiation. The electron density and chemical composition profiles as well as the in-plane superstructure deduced from the present analysis reveal the development of a 0.5 nm thick transition layer at the interface that exhibits a cubic Pr2O3 structure and is commensurate to the Si substrate. This layer is overgrown by disordered Pr silicate.
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68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification
79.60.Dp Adsorbed layers and thin films
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Structural and electrical characteristics of Er2TiO5 gate dielectrics

Tung-Ming Pan, Wei-Hao Shu, and Jia-Liang Hong

Appl. Phys. Lett. 90, 222906 (2007); http://dx.doi.org/10.1063/1.2744486 (3 pages) | Cited 2 times

Online Publication Date: 30 May 2007

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The authors report on the structural and electrical characteristics of high-k erbium titanium oxide (Er2TiO5) gate dielectrics deposited on Si (100) substrates by reactive rf sputtering. They find that the capacitance value of Er2TiO5 gate dielectric annealed at 700 °C is higher compared to other annealing temperatures and exhibits a lower hysteresis voltage as well as interface trap density in C-V curves. This dielectric also shows almost negligible charge trapping under high constant voltage stress. This phenomenon is attributed to an amorphous Er2TiO5 structure and the suppression of the interfacial layer and Er silicate observed from x-ray diffraction and x-ray photoelectron spectroscopy, respectively.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
61.43.Er Other amorphous solids
73.20.At Surface states, band structure, electron density of states
81.15.Cd Deposition by sputtering

In situ observation of electric-field-induced domain switching near a crack tip in poled 0.62PbMg1/3Nb2/3O3–0.38PbTiO3 single crystal

Yejian Jiang, Daining Fang, and Faxin Li

Appl. Phys. Lett. 90, 222907 (2007); http://dx.doi.org/10.1063/1.2745209 (3 pages) | Cited 12 times

Online Publication Date: 31 May 2007

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An in situ polarized light microscopy observation of electric-field-induced domain switching near a crack tip in poled 0.62PbMg1/3Nb2/3O3–0.38PbTiO3 single crystal is reported. In-plane 90° domain switching is found to concentrate near the crack tip and the size of switching zone increases with the electric field. The polarization directions of switched domains, the positions, and width of 90° switching zones accord well with theoretical results based on the domain switching model by Hwang et al. [Acta Metall. Mater. 43, 2073 (1995) ]. However, contradicting with this model, no explicit 180° domain switching ahead of the crack tip is observed.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials

Spatial distribution of phase transition temperature of KTa1−xNbxO3 measured using scanning nonlinear dielectric microscopy

Takashi Sakamoto, Koichiro Nakamura, Kazuo Fujiura, and Yasuo Cho

Appl. Phys. Lett. 90, 222908 (2007); http://dx.doi.org/10.1063/1.2745217 (3 pages) | Cited 2 times

Online Publication Date: 31 May 2007

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The authors have demonstrated that the paraelectric to ferroelectric phase transition temperature TC of KTa1−xNbxO3 (KTN) crystal can be measured locally using scanning nonlinear dielectric microscopy with our newly developed probe, which can keep the contact force constant during a temperature sweep. The TC measurement precision (standard deviation) is 0.09 °C. This corresponds to a composition of 1.4×10−4, which is difficult to achieve with other element analyzers. Moreover, by measuring TC while changing the position, the authors demonstrated that they can measure the spatial distribution of the TC of the KTN crystal.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point

Phase change observed in ultrathin Ba0.5Sr0.5TiO3 films by in situ resonant photoemission spectroscopy

Y.-H. Lin, K. Terai, H. Wadati, M. Kobayashi, M. Takizawa, J. I. Hwang, A. Fujimori, C.-W. Nan, J.-F. Li, S.-I. Fujimori, T. Okane, Y. Saitoh, and K. Kobayashi

Appl. Phys. Lett. 90, 222909 (2007); http://dx.doi.org/10.1063/1.2745249 (3 pages) | Cited 2 times

Online Publication Date: 31 May 2007

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Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100) substrates by the pulsed laser deposition technique and were studied by measuring the Ti 2p→3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. The results demonstrated an abrupt variation in the spectral structures between 2.8 nm ( ∼ 7 ML) and 2.0 nm ( ∼ 5 ML) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0–2.8 nm. This may be ascribed mainly to the intrinsic size effects.
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68.55.-a Thin film structure and morphology
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.15.Fg Pulsed laser ablation deposition
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