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4 Jun 2007

Volume 90, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 90, 233105 (2007); http://dx.doi.org/10.1063/1.2747052 (3 pages)

Youhui Gao, Daisuke Shindo, Yuping Bao, and Kannan Krishnan
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Comment on “Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films” [ Appl. Phys. Lett. 88, 092903 (2006) ]

S. P. Alpay, I. B. Misirlioglu, and V. Nagarajan

Appl. Phys. Lett. 90, 236101 (2007); http://dx.doi.org/10.1063/1.2746412 (2 pages) | Cited 3 times

Online Publication Date: 5 June 2007

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Abstract Unavailable
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
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