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4 Jun 2007

Volume 90, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 90, 233105 (2007); http://dx.doi.org/10.1063/1.2747052 (3 pages)

Youhui Gao, Daisuke Shindo, Yuping Bao, and Kannan Krishnan
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Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

Y. N. Picard, M. E. Twigg, J. D. Caldwell, C. R. Eddy, Jr., P. G. Neudeck, A. J. Trunek, and J. A. Powell

Appl. Phys. Lett. 90, 234101 (2007); http://dx.doi.org/10.1063/1.2746075 (3 pages) | Cited 12 times

Online Publication Date: 4 June 2007

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Direct imaging of atomic step morphologies and individual threading dislocations in on-axis epitaxial 4H-SiC surfaces is presented. Topographically sensitive electron images of the crystalline surfaces were obtained through forescattered electron detection inside a conventional scanning electron microscope. This technique, termed electron channeling contrast imaging (ECCI), has been utilized to reveal the configuration of highly stepped, homoepitaxial 4H-SiC films grown on 4H-SiC mesa structures. Individual threading dislocations have been consistently imaged at the core of spiral atomic step morphologies located on the 4H-SiC surfaces. The ability of ECCI to image atomic steps was verified by atomic force microscopy.
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68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.47.Fg Semiconductor surfaces

Epitaxial relationship between wurtzite GaN and β-Ga2O3

Encarnación G. Víllora, Kiyoshi Shimamura, Kenji Kitamura, Kazuo Aoki, and Takekazu Ujiie

Appl. Phys. Lett. 90, 234102 (2007); http://dx.doi.org/10.1063/1.2745645 (3 pages) | Cited 10 times

Online Publication Date: 4 June 2007

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The epitaxial relationship between wurtzite GaN and monoclinic β-Ga2O3 is studied by transmission electron microscopy. GaN is grown on β-Ga2O3 by molecular beam epitaxy without any low-temperature buffer layer, obtaining c plane GaN on a plane β-Ga2O3. The effect of the surface nitridation, which is necessary for the epitaxial growth, is analyzed at the atomic level. The lattice mismatch has a minimum of 2.6% for the in-plane epitaxial relationship 〈0 1 1〉Ga2O3‖〈1 0 math 0〉GaN.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Micropumping of biofluids by alternating current electrothermal effects

Jie Wu, Meng Lian, and Kai Yang

Appl. Phys. Lett. 90, 234103 (2007); http://dx.doi.org/10.1063/1.2746413 (3 pages) | Cited 24 times

Online Publication Date: 5 June 2007

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Electrokinetics is a preferred technique for microfluidic systems, but it is typically applied on fluids that are not too conductive (lower than 0.02 S/m), which excludes most biological applications. To solve this problem, this letter investigates microfluidic actuation by ac electrothermal (ACET) effect that was largely overlooked by the community. ACET originates from temperature gradients in the fluids, and it becomes more pronounced in more conductive fluids. This letter discusses two ACET pump designs, and pumping was demonstrated with biobuffers (e.g., lysogeny broth at 0.754 S/m).
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87.80.-y Biophysical techniques (research methods)
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.85.Np Fluidics
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
47.65.-d Magnetohydrodynamics and electrohydrodynamics

Continuous field-flow separation of particle populations in a dielectrophoretic chip with three dimensional electrodes

Ciprian Iliescu, Guillaume Tresset, and Guolin Xu

Appl. Phys. Lett. 90, 234104 (2007); http://dx.doi.org/10.1063/1.2747187 (3 pages) | Cited 10 times

Online Publication Date: 6 June 2007

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This letter presents a dielectrophoretic (DEP) separation method of particles under continuous flow. The method consists of flowing two particle populations through a microfluidic channel, in which the vertical walls are the electrodes of the DEP device. The irregular shape of the electrodes generates both electric field and fluid velocity gradients. As a result, the particles that exhibit negative DEP can be trapped in the fluidic dead zones, while the particles that experience positive DEP are concentrated in the regions with high velocity and collected at the outlet. The device was tested with dead and living yeast cells.
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87.80.-y Biophysical techniques (research methods)
87.17.-d Cell processes
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.32.Ff Separated flows
47.60.-i Flow phenomena in quasi-one-dimensional systems
47.85.Np Fluidics

Ferromagnetic resonance force microscopy on a thin permalloy film

E. Nazaretski, I. Martin, R. Movshovich, D. V. Pelekhov, P. C. Hammel, M. Zalalutdinov, J. W. Baldwin, B. Houston, and T. Mewes

Appl. Phys. Lett. 90, 234105 (2007); http://dx.doi.org/10.1063/1.2747171 (3 pages) | Cited 10 times

Online Publication Date: 7 June 2007

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Ferromagnetic resonance force microscopy (FMRFM) offers a means of performing local ferromagnetic resonance. The authors have studied the evolution of the FMRFM force spectra in a continuous 50 nm thick permalloy film as a function of probe-film distance and performed numerical simulations of the intensity of the FMRFM probe-film interaction force, accounting for the presence of the localized strongly nonuniform magnetic field of the FMRFM probe magnet. Excellent agreement between the experimental data and the simulation results provides insight into the mechanism of FMR mode excitation in a FMRFM experiment.
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68.37.Rt Magnetic force microscopy (MFM)
07.79.Pk Magnetic force microscopes
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.70.Ak Magnetic properties of monolayers and thin films
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