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Appl. Phys. Lett. 90, 241109 (2007); http://dx.doi.org/10.1063/1.2749175 (3 pages)

Freestanding waveguides in silicon

P. Y. Yang1, G. Z. Mashanovich1, I. Gomez-Morilla1, W. R. Headley1, G. T. Reed1, E. J. Teo2, D. J. Blackwood2, M. B. H. Breese3, and A. A. Bettiol3

1Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
2Department of Materials Science and Engineering, 7 Engineering Drive 1, National University of Singapore, Singapore 117574, Singapore
3Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore

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(Received 12 January 2007; accepted 22 May 2007; published online 13 June 2007)

Using a direct-write process for the production of three dimensional microstructures on a semiconductor, freestanding waveguides have been realized in silicon. The waveguides are produced by a focused beam of high energy protons that is scanned over a silicon substrate. The latent image of the scan is subsequently developed by electrochemical etching. Herein the authors report on the fabrication method as well as determining the propagation loss of these structures. Propagation loss values of 13.4 and 14.6 dB/cm were obtained for these preliminary structures for transverse electric and transverse magnetic polarizations, respectively.

© 2007 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 42.82.Et

    Waveguides, couplers, and arrays

  • 42.79.Gn

    Optical waveguides and couplers

  • 42.82.Cr

    Fabrication techniques; lithography, pattern transfer

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    M. B. H. Breese, F. J. T. Champeaux, E. J. Teo, A. A. Bettiol, and D. J. Blackwood, Phys. Rev. B 73, 035428 (2006).

    E. J. Teo, M. B. H. Breese, E. P. Tavernier, A. A. Bettiol, and F. Watt, Appl. Phys. Lett. 84, 3202 (2004)APPLAB000084000016003202000001.


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