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Applied Physics Letters / Volume 90 / Issue 25 / DEVICE PHYSICS

Appl. Phys. Lett. 90, 253507 (2007); http://dx.doi.org/10.1063/1.2749839 (3 pages)

Field effect in epitaxial graphene on a silicon carbide substrate

Gong Gu1, Shu Nie2, R. M. Feenstra2, R. P. Devaty3, W. J. Choyke3, Winston K. Chan1, and Michael G. Kane1

1Sarnoff Corporation, CN5300, Princeton, New Jersey 08543
2Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
3Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 152650

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(Received 7 May 2007; accepted 24 May 2007; published online 19 June 2007)

The authors report a strong field effect observed at room temperature in epitaxially synthesized, as opposed to exfoliated, graphene. The graphene formed on the silicon face of a 4H silicon carbide substrate was photolithographically patterned into isolated active regions for the semimetal graphene-based transistors. Gold electrodes and a polymer dielectric were used in the top-gate transistors. The demonstration of a field effect mobility of 535 cm2/V s was attributed to the transistor geometry that maximizes conductance modulation, although the mobility is lower than observed in exfoliated graphene possibly due to grain boundaries caused by the rough morphology of the substrate surface.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon compounds, carbon, gold, semimetals, polymers, dielectric materials, epitaxial layers, electrical conductivity, field effect transistors, grain boundaries, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2749839

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. Nakada, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 54, 17954 (1996).

    B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, M. D. Giles, M. A. Stettler, and S. E. Nikonov, Appl. Phys. Lett. 88, 142102 (2006)APPLAB000088000014142102000001.

    G. Gu, M. G. Kane, and S.-H. Mau, J. Appl. Phys. 101, 014504 (2007)JAPIAU000101000001014504000001.

    G. Nunes, Jr., S. G. Zane, and J. S. Meth, J. Appl. Phys. 98, 104503 (2005)JAPIAU000098000010104503000001.


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