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25 Jun 2007

Volume 90, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 90, 262501 (2007); http://dx.doi.org/10.1063/1.2752015 (3 pages)

Ian Appelbaum and Douwe J. Monsma
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Transit-time spin field-effect transistor

Ian Appelbaum and Douwe J. Monsma

Appl. Phys. Lett. 90, 262501 (2007); http://dx.doi.org/10.1063/1.2752015 (3 pages) | Cited 13 times

Online Publication Date: 25 June 2007

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The authors propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect transistor in Si using electrostatic transit-time control of coherent spin precession in a perpendicular magnetic field.
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85.75.Hh Spin polarized field effect transistors

Large magnetocaloric effect in spinel CdCr2S4

L. Q. Yan, J. Shen, Y. X. Li, F. W. Wang, Z. W. Jiang, F. X. Hu, J. R. Sun, and B. G. Shen

Appl. Phys. Lett. 90, 262502 (2007); http://dx.doi.org/10.1063/1.2751576 (3 pages) | Cited 10 times

Online Publication Date: 25 June 2007

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Magnetocaloric effect in CdCr2S4 was investigated by magnetization and heat capacity measurements. CdCr2S4 is of a cubic spinel structure with soft ferromagnetism and performs reversible magnetic entropy in the whole experimental temperature range from 56 to 128 K. A large magnetic entropy change ∼ 7.04 J/kg K and adiabatic temperature change ΔTad ∼ 2.6 K are revealed for a field change of 0–5 T near the Curie temperature of 87 K. These results suggest that sulfospinel probably is a promising candidate as working material in magnetic refrigeration technology.
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75.30.Sg Magnetocaloric effect, magnetic cooling
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Dd Nonmetallic ferromagnetic materials
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
65.40.G- Other thermodynamical quantities

Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition

K. W. Liu, J. Y. Zhang, D. Z. Shen, C. X. Shan, B. H. Li, Y. M. Lu, and X. W. Fan

Appl. Phys. Lett. 90, 262503 (2007); http://dx.doi.org/10.1063/1.2751578 (3 pages) | Cited 15 times

Online Publication Date: 25 June 2007

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FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tetragonal structure. The structure relationship between FeSe epilayer and GaAs (001) substrate has been studied. The critical behavior in the temperature-dependent resistivity at ∼ 290 K is close to the Curie temperature, which confirmed that the transformation from ferromagnetism to paramagnetism could be responsible for the critical behavior.
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75.70.Ak Magnetic properties of monolayers and thin films
73.61.Le Other inorganic semiconductors
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
68.55.-a Thin film structure and morphology

Large magnetic entropy change in Ni50Mn50−xInx Heusler alloys

Arjun Kumar Pathak, Mahmud Khan, Igor Dubenko, Shane Stadler, and Naushad Ali

Appl. Phys. Lett. 90, 262504 (2007); http://dx.doi.org/10.1063/1.2752720 (3 pages) | Cited 58 times

Online Publication Date: 26 June 2007

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The magnetocaloric properties of polycrystalline Ni50Mn50−xInx (15 ⩽ x ⩽ 16) associated with the second order magnetic transition at the Curie temperature and the first order martensitic transition were studied using magnetization measurements. The refrigeration capacity and magnetic entropy change were found to depend on the In concentration and reach a maximum value of refrigeration capacity of 280 J/kg with a magnetic entropy change of −6.8 J/kg K at 318 K for a magnetic field change of 5 T. These values of the magnetocaloric parameters are comparable to that of the largest values reported near the second order transition of metallic magnets near room temperature.
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75.30.Sg Magnetocaloric effect, magnetic cooling
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Cc Other ferromagnetic metals and alloys
65.40.G- Other thermodynamical quantities
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Magnetic and structural properties of Gd-implanted zinc-blende GaN

F.-Y. Lo, A. Melnikov, D. Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D. J. As, and K. Lischka

Appl. Phys. Lett. 90, 262505 (2007); http://dx.doi.org/10.1063/1.2753113 (3 pages) | Cited 12 times

Online Publication Date: 29 June 2007

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Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1×1012 to 1×1015 cm−2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.20.Ck Nonmetals
61.72.uj III-V and II-VI semiconductors
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