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15 Jan 2007

Volume 90, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 032108 (2007); http://dx.doi.org/10.1063/1.2431702 (3 pages)

D. Buca, B. Holländer, S. Feste, St. Lenk, H. Trinkaus, S. Mantl, R. Loo, and M. Caymax
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Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser

H. S. Djie, Y. Wang, D. Negro, and B. S. Ooi

Appl. Phys. Lett. 90, 031101 (2007); http://dx.doi.org/10.1063/1.2431707 (3 pages) | Cited 9 times

Online Publication Date: 16 January 2007

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The authors demonstrate the selective postgrowth band gap engineering and the fabrication of band gap tuned laser in InAs–InAlGaAs quantum-dash lasers grown on InP substrate. The process utilizes nitrogen implantation to induce local defects and to enhance the group-III intermixing rate spatially upon the thermal annealing. Compared with the as-grown laser, intermixed laser with wavelength shifted by 127 nm shows a 36% reduction in threshold current density and produces a comparable slope of efficiency. The integrity of the intermixed material is retained suggesting that intermixing process paves way to planar, monolithic integration of quantum-dash-based devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode

Eun-Hyun Park, David Nicol Hun Kang, Ian T. Ferguson, Soo-Kun Jeon Joong-Seo Park, and Tae-Kyung Yoo

Appl. Phys. Lett. 90, 031102 (2007); http://dx.doi.org/10.1063/1.2431717 (3 pages) | Cited 10 times

Online Publication Date: 16 January 2007

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The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode (LED) was studied using dual wavelength LEDs. The result verified that the hole carrier transport is easily blocked by the silicon doped barrier, and the dominant electron and hole recombination occurs at the wells between p-GaN and the silicon doped barrier. The electroluminescence spectrum and the wavelength blueshift of the silicon doped LEDs were compared with undoped LEDs. The numerical simulation was done to clearly explain the hole blocking effect by the silicon doped barrier.
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85.60.Jb Light-emitting devices

Efficient all-fiber bismuth-doped laser

I. Razdobreev, L. Bigot, V. Pureur, A. Favre, G. Bouwmans, and M. Douay

Appl. Phys. Lett. 90, 031103 (2007); http://dx.doi.org/10.1063/1.2431762 (3 pages) | Cited 61 times

Online Publication Date: 16 January 2007

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In the present letter the authors report on the realization of an all-fiber bismuth-doped laser with laser emission that can be chosen with corresponding fiber Bragg gratings between at least 1150 and 1225 nm. In their experiments they achieved a slope efficiency of about 24% at 1200 nm, which is the highest reported for this kind of laser.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems

Dielectric response of soft mode in ferroelectric SrTiO3

Jiaguang Han, Fan Wan, Zhiyuan Zhu, and Weili Zhang

Appl. Phys. Lett. 90, 031104 (2007); http://dx.doi.org/10.1063/1.2431448 (3 pages) | Cited 5 times

Online Publication Date: 16 January 2007

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The authors report far-infrared dielectric properties of powder form ferroelectric SrTiO3. Terahertz time-domain spectroscopy (TDS) measurement reveals that the low-frequency dielectric response of SrTiO3 is a consequence of the lowest transverse optical (TO) soft mode TO1 at 2.70 THz (90.0 cm−1), which is directly verified by Raman spectroscopy. This result provides a better understanding of the relation of low-frequency dielectric function with the optical phonon soft mode for ferroelectric materials. Combining terahertz TDS with Raman spectra, the overall low-frequency optical phonon response of SrTiO3 is presented in an extended spectral range from 6.7 to 1000.0 cm−1.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
78.30.Hv Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Second-harmonic generation in quantum cascade lasers with electric field and current dependent nonlinear susceptibility

Dongxia Qu, Feng Xie, Gary Shu, Safiyy Momen, Evgenii Narimanov, Claire F. Gmachl, and Deborah L. Sivco

Appl. Phys. Lett. 90, 031105 (2007); http://dx.doi.org/10.1063/1.2431757 (3 pages) | Cited 5 times

Online Publication Date: 17 January 2007

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The authors demonstrate a quantum cascade laser design with an integrated resonant nonlinearity for second-harmonic generation. Its nonlinear power conversion efficiency is strongly dependent on the injected current density due to an electric field and current dependent nonlinear susceptibility. This dependence produces an observed tenfold increase of the conversion efficiency over the current density range of 2.7–7.5 kA/cm2. Furthermore, bidirectional lasing at widely different wavelengths is a side effect for this active region design.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

High-resolution mapping of the three-dimensional point spread function in the near-focus region of a confocal microscope

Michael J. Nasse, Jörg C. Woehl, and Serge Huant

Appl. Phys. Lett. 90, 031106 (2007); http://dx.doi.org/10.1063/1.2431764 (3 pages) | Cited 7 times

Online Publication Date: 17 January 2007

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Fluorescent nanobeads with a diameter of 20 nm were used to map the three-dimensional point spread function in the near-focus region of a confocal microscope at high spatial resolution. Fluorescence images were taken in 109 equidistant planes (50 nm apart) parallel to the focal plane; postacquisition stacking of these images allows the reconstruction of the point spread function in the axial plane. The experimental distribution is compared to theoretical calculations based on an integral representation for the light intensity in the focus region that takes into account stratified media, polarization, the Gaussian illumination profile, and the finite exit pinhole size.
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42.30.Lr Modulation and optical transfer functions
07.60.Pb Conventional optical microscopes
42.30.Va Image forming and processing

Large-scale optical traps on a chip for optical sorting

Y. Y. Sun, X.-C. Yuan, L. S. Ong, J. Bu, S. W. Zhu, and R. Liu

Appl. Phys. Lett. 90, 031107 (2007); http://dx.doi.org/10.1063/1.2431768 (3 pages) | Cited 18 times

Online Publication Date: 17 January 2007

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The authors present a power-efficient large-scale lensless optical traps on a chip (OTOCs) as an optofluidic element for optical sorting of microparticles. Based on the well-known Talbot self-imaging effect in the Fresnel region, the OTOC makes use of a two-dimensional microfabricated chessboardlike structure to create an optical lattice near its emergent plane. Simultaneous trapping of hundreds of microparticles in a regular array (>200×200 μm2) is proved experimentally without adopting an external optical projection lens configuration. Furthermore, the authors demonstrate experimental results for large-scale sorting of microparticles by sizes using the OTOC.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions

Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass

M. Hughes, H. Rutt, D. Hewak, and R. J. Curry

Appl. Phys. Lett. 90, 031108 (2007); http://dx.doi.org/10.1063/1.2432280 (3 pages) | Cited 13 times

Online Publication Date: 17 January 2007

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Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730, and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width at half maximum of ∼ 500 nm, is observed peaking at 1500 nm when exciting at 514, 808, and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 μs and 4%, respectively. From the available spectroscopic data, the authors propose the vanadium ions’ valence to be 3+ and be in tetrahedral coordination. The results indicate a potential for the development of a laser or optical amplifier based on V:GLS.
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78.55.Qr Amorphous materials; glasses and other disordered solids
78.40.Pg Disordered solids

Zero dispersion slow light with low leakage loss in defect Bragg fiber

Chenxi Lin, Wei Zhang, Yidong Huang, and Jiangde Peng

Appl. Phys. Lett. 90, 031109 (2007); http://dx.doi.org/10.1063/1.2420781 (3 pages) | Cited 7 times

Online Publication Date: 17 January 2007

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By introducing a defect layer into the periodic cladding of Bragg fiber, the core mode and the defect mode may anticross near their cutoff inside band gap. The defect location suppresses and flattens dramatically the group velocity (vg) of coupled core mode and the defect thickness changes gradually its dispersion. Theoretical investigation reveals zero dispersion and zero dispersion slope at various low vg’s can be achieved simultaneously at arbitrary wavelengths. Specially, the proper defect in the sixth bilayer leads to the lowest vg of 0.074 of light speed in vacuum at 1550 nm. The optical energy is confined well in the core and the leakage loss is sufficiently low.
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42.81.Dp Propagation, scattering, and losses; solitons

Simple protocol for secure decoy-state quantum key distribution with a loosely controlled source

Xiang-Bin Wang, Cheng-Zhi Peng, and Jian-Wei Pan

Appl. Phys. Lett. 90, 031110 (2007); http://dx.doi.org/10.1063/1.2431718 (3 pages) | Cited 22 times

Online Publication Date: 18 January 2007

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The method of decoy-state quantum key distribution requests different intensities of light pulses. Existing theory has assumed exact control of intensities. Here the authors propose a simple protocol which is secure and efficient even there are errors in intensity control. In their protocol, decoy pulses and signal pulses are generated from the same father pulses with a two-value attenuation. Given the upper bound of fluctuation of the father pulses, their protocol is secure provided that the two-value attenuation is done exactly. They propose to use unbalanced beam splitters for a stable attenuation.
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03.67.Dd Quantum cryptography and communication security
03.67.Hk Quantum communication

Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness

P. Morgan Pattison, Aurelien David, Rajat Sharma, Claude Weisbuch, Steven DenBaars, and Shuji Nakamura

Appl. Phys. Lett. 90, 031111 (2007); http://dx.doi.org/10.1063/1.2430913 (3 pages) | Cited 8 times

Online Publication Date: 18 January 2007

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Gallium nitride based microcavity light emitting diodes less than 400 nm thick emitting at a peak wavelength of 455 nm have been fabricated. The epitaxial structure was grown by metal organic chemical vapor deposition, and the device was fabricated using a laser lift-off process. Cavity thinning was carried out using inductively coupled plasma etching until a cavity length of roughly 2λ ( ∼ 375 nm, corresponding to a cavity order of 4 for λ = 455 nm in GaN) was achieved. Devices are presented that show perfectly detuned angular emission and perfectly resonant emission between the cavity length and emission wavelength.
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85.60.Jb Light-emitting devices

Tunable silicon-based light sources using erbium doped liquid crystals

S. M. Weiss, J. Zhang, P. M. Fauchet, V. V. Seregin, and J. L. Coffer

Appl. Phys. Lett. 90, 031112 (2007); http://dx.doi.org/10.1063/1.2432295 (3 pages) | Cited 4 times

Online Publication Date: 18 January 2007

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Tunable emission in the near infrared is demonstrated on a silicon platform. The building blocks for the tunable light sources consist of porous silicon microcavities infiltrated with erbium doped nematic liquid crystals. Erbium ions are the luminescence source, porous silicon microcavities narrow the emission band, and liquid crystals enable tuning of the peak wavelength. Greater than 10 dB attenuation is achievable by thermal actuation with microcavities having a Q factor of 200. The bandwidth of the tunable emission is limited by the liquid crystal birefringence.
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42.70.Df Liquid crystals
42.72.Ai Infrared sources
61.30.-v Liquid crystals
78.20.Fm Birefringence

Fabrication of H+ implanted channel waveguides in Y3Al5O12:Nd,Tm single crystal buried epitaxial layers for infrared to blue upconversion laser systems

Marta Szachowicz, Paul Moretti, Marie-France Joubert, Maurice Couchaud, and Bernard Ferrand

Appl. Phys. Lett. 90, 031113 (2007); http://dx.doi.org/10.1063/1.2422891 (3 pages) | Cited 12 times

Online Publication Date: 18 January 2007

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Fabrication and intense infrared to blue upconversion emission of proton-implanted Tm3+, Nd3+:Y3Al5O12 (YAG) channel waveguides are reported for the first time to authors’ knowledge. The single or multiple implanted channels are buried by positive induced index change in stacked planar layers grown by liquid-phase epitaxy on pure YAG substrates. The Nd3+ codoping considerably enhances the IR to blue upconversion emission of Tm3+ ions after excitation in resonance with either Nd3+ or Tm3+ absorption transition around 800 nm.
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42.79.Gn Optical waveguides and couplers
61.72.up Other materials
42.70.Hj Laser materials

Optical fiber taper coupling and high-resolution wavelength tuning of microdisk resonators at cryogenic temperatures

Kartik Srinivasan and Oskar Painter

Appl. Phys. Lett. 90, 031114 (2007); http://dx.doi.org/10.1063/1.2431719 (3 pages) | Cited 20 times

Online Publication Date: 19 January 2007

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A system for studying microcavity resonators at cryogenic temperatures ( ∼ 10 K) through evanescent coupling via optical fiber taper waveguides is reported, and efficient fiber coupling to AlGaAs microdisk cavities with embedded quantum dots is demonstrated. As an immediate application of this tool, the authors study high-resolution tuning of microdisk cavities through nitrogen gas adsorption, as first discussed by Mosor et al. [Appl. Phys. Lett. 87, 141105 (2005) ]. By proper regulation of the nitrogen gas flow and delivery of the gas to the sample surface, continuous tuning can be achieved with modest gas flows, and overall wavelength shifts as large as 4 nm are achieved.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

Takasumi Tanabe, Katsuhiko Nishiguchi, Akihiko Shinya, Eiichi Kuramochi, Hiroshi Inokawa, Masaya Notomi, Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroshi Fukuda, Hiroyuki Shinojima, and Seiichi Itabashi

Appl. Phys. Lett. 90, 031115 (2007); http://dx.doi.org/10.1063/1.2431767 (3 pages) | Cited 47 times

Online Publication Date: 19 January 2007

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On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window ( ∼ 70 ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100 fJ).
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Qs Photonic bandgap materials
61.72.uf Ge and Si
42.79.Gn Optical waveguides and couplers
61.72.Cc Kinetics of defect formation and annealing
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Hybrid inorganic/organic microstructured light-emitting diodes produced using photocurable polymer blends

E. Gu, H. X. Zhang, H. D. Sun, M. D. Dawson, A. R. Mackintosh, A. J. C. Kuehne, R. A. Pethrick, C. Belton, and D. D. C. Bradley

Appl. Phys. Lett. 90, 031116 (2007); http://dx.doi.org/10.1063/1.2431772 (3 pages) | Cited 12 times

Online Publication Date: 19 January 2007

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Light-emitting diodes (LEDs) in the form of a one-dimensional array of microstripes emitting at 370 nm were fabricated from AlInGaN inorganic semiconductor. These microlight sources were then used to “directly write” microstructures in photocurable blends of organic light-emitting polymers (LEPs) spin coated onto the LED surface. In this way, thin microstripes of LEP as narrow as 50 μm have been fabricated and integrated with the micro-LEDs. These “self-aligned” polymer microstripes serve as wavelength downconverters under further excitation by the UV micro-LEDs, producing hybrid inorganic/organic microstructured LEDs.
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85.60.Jb Light-emitting devices

Role of external cavity reflectivity for achieving polarization control and stabilization of vertical cavity surface emitting laser

Mikel Arizaleta Arteaga, Manuel López-Amo, Hugo Thienpont, and Krassimir Panajotov

Appl. Phys. Lett. 90, 031117 (2007); http://dx.doi.org/10.1063/1.2431790 (3 pages) | Cited 6 times

Online Publication Date: 19 January 2007

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The authors present the experimental results showing how the external mirror reflectivity affects the polarization properties of a vertical cavity surface emitting laser subject to optical feedback from an extremely short external cavity. The amplitude of modulation of the polarization switching current with the external cavity length is found to be proportional to the external mirror reflectivity, confirming its key role in achieving polarization control and stabilization of such lasers using optical feedback. Numerical simulations presented here show good agreement with experiments.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
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Singlet oxygen production in a microcathode sustained discharge

G. Bauville, B. Lacour, L. Magne, V. Puech, J. P. Boeuf, E. Munoz-Serrano, and L. C. Pitchford

Appl. Phys. Lett. 90, 031501 (2007); http://dx.doi.org/10.1063/1.2431791 (3 pages) | Cited 17 times

Online Publication Date: 16 January 2007

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The authors report experimental results showing that high yields of singlet oxygen O2(a 1Δg) can be generated in a three-electrode microcathode sustained discharge (MCSD) configuration. This configuration consists of a microhollow cathode discharge (MHCD) acting as a plasma cathode to sustain a stable glow discharge between the MHCD and a third, planar electrode placed at a distance of 8 mm. Experiments were performed in pure oxygen and in mixtures of oxygen with rare gases (He or Ar) at pressures up to 130 Torr. O2(a 1Δg) relative yields of 7.6% were measured 23 cm downstream in the afterglow of the MCSD discharge.
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52.80.Hc Glow; corona
52.50.Dg Plasma sources
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Superradiant terahertz Smith-Purcell radiation from surface plasmon excited by counterstreaming electron beams

Young-Min Shin, Jin-Kyu So, Kyu-Ha Jang, Jong-Hyo Won, Anurag Srivastava, and Gun-Sik Park

Appl. Phys. Lett. 90, 031502 (2007); http://dx.doi.org/10.1063/1.2432270 (3 pages) | Cited 18 times

Online Publication Date: 17 January 2007

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The authors show that evanescent tunneling transmission of effective surface plasmon polaritons between two counterstreaming electron beams noticeably increases Smith-Purcell radiation (SPR) intensity by about two orders of magnitude as well as lower its transition threshold from a spontaneous emission to a stimulated one. An emission mechanism of the superradiant SPR is theoretically analyzed by the dielectric conversion of the structured metal surface and the boundary matching condition of Maxwell’s equations in comparison with numerical simulations.
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42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
78.45.+h Stimulated emission
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.68.+m Optical properties of surfaces

Influence of a large oblique incident angle on energetic protons accelerated from solid-density plasmas by ultraintense laser pulses

C. T. Zhou and X. T. He

Appl. Phys. Lett. 90, 031503 (2007); http://dx.doi.org/10.1063/1.2432242 (3 pages) | Cited 24 times

Online Publication Date: 18 January 2007

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The acceleration of energetic electron, proton, and heavy ion beams produced by ultrahigh-intensity laser pulses through thin plastic targets is studied using two-dimensional hybrid particle-in-cell simulation. When the laser is incident at a large angle, the proton beams accelerated from the front and rear surfaces of the target deviate from the normal direction because of the formation of non-Gaussian asymmetric sheath field at the target surfaces. In particular, the simulations clearly show that the proton beam in the backward direction can have higher Bragg peak energy than that of the forward direction if the incident angle is sufficiently large.
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52.38.Kd Laser-plasma acceleration of electrons and ions
52.40.Mj Particle beam interactions in plasmas
52.65.Rr Particle-in-cell method
52.65.Ww Hybrid methods
52.40.Kh Plasma sheaths

Hexagon and square patterned air discharges

Lifang Dong, Yafeng He, Weili Liu, Ruiling Gao, Hongfang Wang, and Haitao Zhao

Appl. Phys. Lett. 90, 031504 (2007); http://dx.doi.org/10.1063/1.2432950 (3 pages) | Cited 13 times

Online Publication Date: 19 January 2007

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Hexagon and square patterned air discharges are realized by using a dielectric barrier discharge device with two water electrodes. With increasing voltage, the filaments (plasma columns) tend to be dense and regularly arranged, and the current in each half cycle changes from several peaks to one leading peak followed by a broad hump of current peaks. It shows that the spatiotemporal correlation between filaments is enhanced with increasing voltage. A phase diagram of hexagon patterned air discharge with different gas gap widths as a function of air pressure and applied voltage is presented.
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52.80.-s Electric discharges
52.25.Fi Transport properties
05.45.-a Nonlinear dynamics and chaos

Mitigating plasma constriction using dielectric barriers in radio-frequency atmospheric pressure glow discharges

J. J. Shi, D. W. Liu, and M. G. Kong

Appl. Phys. Lett. 90, 031505 (2007); http://dx.doi.org/10.1063/1.2432233 (3 pages) | Cited 15 times

Online Publication Date: 19 January 2007

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It is known that radio-frequency (rf) atmospheric glow discharges with bare electrodes are susceptible to plasma constriction at large discharge currents. This is undesirable for large-scale applications, even though large currents usually lead to abundant plasma reactive species and high application efficiency. In this letter, an experimental investigation is presented to demonstrate that plasma constriction can be mitigated by introducing dielectric barriers to the electrodes. The resulting atmospheric rf dielectric-barrier discharge is shown to operate in the γ mode of large discharge current while maintaining its discharge volume. This improves significantly plasma stability and the application potential.
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52.80.Hc Glow; corona
52.80.Pi High-frequency and RF discharges
52.25.Fi Transport properties
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
52.25.Mq Dielectric properties
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Broadband Mo/Si multilayer transmission phase retarders for the extreme ultraviolet

Zhanshan Wang, Hongchang Wang, Jingtao Zhu, Zhong Zhang, Yao Xu, Shumin Zhang, Wenjuan Wu, Fengli Wang, Bei Wang, Liqin Liu, Lingyan Chen, Alan G. Michette, Slawka J. Pfauntsch, A. Keith Powell, Franz Schäfers, et al.

Appl. Phys. Lett. 90, 031901 (2007); http://dx.doi.org/10.1063/1.2431761 (3 pages) | Cited 6 times

Online Publication Date: 16 January 2007

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Experimental results on aperiodic broadband transmission molybdenum/silicon multilayer phase retarders for the extreme ultraviolet range are presented. The broadband phase retarders were designed using a numerical method and made using direct current magnetron sputtering on silicon nitride membrane. The polarization properties of these aperiodic transmission phase retarders have been investigated using the soft x-ray polarimeter at BESSY-II. The measured phase shift was about 42° in the wavelength range of 13.8–15.5 nm, and the corresponding s-component transmission (Ts) decreased from 6% to 2% with increasing wavelength.
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07.85.-m X- and γ-ray instruments
42.79.Ci Filters, zone plates, and polarizers

Plastic deformation modes of gallium arsenide in nanoindentation and nanoscratching

K. Wasmer, M. Parlinska-Wojtan, R. Gassilloud, C. Pouvreau, J. Tharian, and J. Micher

Appl. Phys. Lett. 90, 031902 (2007); http://dx.doi.org/10.1063/1.2431763 (3 pages) | Cited 12 times

Online Publication Date: 16 January 2007

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The mechanical deformation by nanoindentation and scratching of gallium arsenide has been investigated using cross-sectional transmission electron microscopy. Twinning was found to be the main deformation process occurring during indentation while only slip bands and perfect dislocations are observed during scratching. This behavior is explained, in the authors’ experiments, with the strain rate in scratching being hundred times greater than in indentation. Hence, the low indentation velocity allows twins to be nucleated and propagated from surface inhomogeneities, whereas in scratching, the deformation occurs first in front of the indenter and the scratching speed allows only perfect α dislocation to propagate.
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81.40.Lm Deformation, plasticity, and creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Mm Grain and twin boundaries
62.20.F- Deformation and plasticity
62.20.Qp Friction, tribology, and hardness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Amorphous states of melt-spun alloys in the system Dy–(Mn,Fe)6–(Ge,Al)6

P. Kerschl, U. K. Rößler, T. Gemming, K.-H. Müller, Z. Śniadecki, and B. Idzikowski

Appl. Phys. Lett. 90, 031903 (2007); http://dx.doi.org/10.1063/1.2432169 (3 pages) | Cited 4 times

Online Publication Date: 16 January 2007

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Amorphous states have been found in rapidly quenched alloys in the pseudoternary system DyMn6−x−yFex+yGe6−xAlx (x,y = 0 to 6). The amorphous state is formed in competition to the crystallization of ternary (1-6-6 rare earth-transition metal-metal) compounds. The melt-spun ribbons were investigated by x-ray diffraction, high resolution transmission electron microscopy, differential scanning calorimetry, and magnetization measurements. All amorphous samples exhibit multistep crystallization behavior without a clear indication for a glass transition below the first exothermic effect. Some of the amorphous alloys exhibit a magnetic ordering above room temperature and complex magnetic transitions similar to the properties of crystalline 1-6-6 compounds.
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61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.D- Solid-liquid transitions
64.70.K- Solid-solid transitions
81.30.Fb Solidification
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
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