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15 Jan 2007

Volume 90, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 90, 032108 (2007); http://dx.doi.org/10.1063/1.2431702 (3 pages)

D. Buca, B. Holländer, S. Feste, St. Lenk, H. Trinkaus, S. Mantl, R. Loo, and M. Caymax
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Growth and electrical properties of large size Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals prepared by the vertical Bridgman technique

Guisheng Xu, Kai Chen, Danfeng Yang, and Junbao Li

Appl. Phys. Lett. 90, 032901 (2007); http://dx.doi.org/10.1063/1.2431706 (3 pages) | Cited 27 times

Online Publication Date: 16 January 2007

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Relaxor-based ferroelectric single crystals Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIMNT) have been grown directly from their melt using the vertical Bridgman method, and their boules have reached the size of ϕ45×80 mm. The as-grown PIMNT28/40/32 crystals on the (001) cuts exhibit a dielectric constant ε ∼ 5200, dielectric loss tan δ ∼ 0.50%, piezoelectric strain constant d33 ∼ 1700–2200 pC/N, electromechanical coupling factors kt ∼ 0.61 and k33 ∼ 0.92, coercive field Ec ∼ 10.88 kV/cm, remanent polarization Pr ∼ 46 μC/cm2, Curie temperature TC ∼ 192 °C, and rhombohedral to tetragonal phase transition temperature Trt ∼ 119 °C. Moreover, their piezoelectric properties show good thermal stability under the heat treatment at 105 °C.
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81.10.Fq Growth from melts; zone melting and refining
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point

Plasmalike negative capacitance in nanocolloids

J. Shulman, S. Tsui, F. Chen, Y. Y. Xue, and C. W. Chu

Appl. Phys. Lett. 90, 032902 (2007); http://dx.doi.org/10.1063/1.2431782 (3 pages) | Cited 6 times

Online Publication Date: 17 January 2007

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A negative capacitance has been observed in a nanocolloid between 0.1 and 10−5 Hz. The response is linear over a broad range of conditions. The low-ω dispersions of both the resistance and capacitance are consistent with the free-carrier plasma model, while the transient behavior demonstrates a possible energy storage mechanism. A collective excitation, therefore, is suggested.
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73.63.-b Electronic transport in nanoscale materials and structures
72.30.+q High-frequency effects; plasma effects
82.70.Dd Colloids

Investigation of effective internal field in congruent lithium niobate crystal by digital holographic interferometry

Ya’nan Zhi, De’an Liu, Weijuan Qu, Zhu Luan, and Liren Liu

Appl. Phys. Lett. 90, 032903 (2007); http://dx.doi.org/10.1063/1.2432236 (3 pages) | Cited 1 time

Online Publication Date: 17 January 2007

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The phase contrast across the crystal thickness induced by the internal field is measured by the digital holographic interferometry just after the congruent lithium niobate crystal is partially poled. The direction of applied external field is antiparallel to that of internal field, and the measured phase contrast varies linearly with the applied external field. A new internal field is obtained by this method and named effective internal field. The distinct discrepancy between effective and equivalent internal fields is observed. The authors attribute this effect to the new macroscopic representation of elastic dipole components of defect complex in the crystal.
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42.70.Gi Light-sensitive materials
42.40.Kw Holographic interferometry; other holographic techniques
07.60.Ly Interferometers
78.20.Jq Electro-optical effects

Epitaxial growth of BaTiO3 films on TiN/Si substrates by a hydrothermal-galvanic couple method

Yu-Chih Chieh, Chin-Chih Yu, and Fu-Hsing Lu

Appl. Phys. Lett. 90, 032904 (2007); http://dx.doi.org/10.1063/1.2431572 (3 pages) | Cited 5 times

Online Publication Date: 18 January 2007

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Highly (111)- and (200)-oriented cubic BaTiO3 films with dense and hemispherelike morphology have been synthesized on different oriented TiN-coated silicon substrates in barium contained concentrated alkaline solutions at temperatures below 100 °C. An unconventional hydrothermal technique combining a hydrothermal method with a galvanic couple setup was used to prepare the films. Resultant BaTiO3 films could grow easily and epitaxially on the TiN seeding layer over Si substrates. Compared to the conventional hydrothermal method, such a hydrothermal-galvanic couple technique could significantly enhance the growth rate of BaTiO3.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.A- Nucleation and growth
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Anisotropy of domain switching in prepoled lead titanate zirconate ceramics under multiaxial electrical loading

Yuan-Ming Liu, Fa-Xin Li, and Dai-Ning Fang

Appl. Phys. Lett. 90, 032905 (2007); http://dx.doi.org/10.1063/1.2426925 (3 pages) | Cited 2 times

Online Publication Date: 18 January 2007

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The authors report an observation of anisotropic domain switching process in prepoled lead titanate zirconate (PZT) ceramics under multiaxial electrical loading. Prepoled PZT blocks were obliquely cut to apply an electric field at discrete angles θ (0°–180°) to the initial poling direction. Both the coercive field and switchable polarization are found to decrease significantly when sin θ increases from zero to unity. The measured strain curves show that most domains that accomplished 180° domain switching actually experienced two successive 90° switching. The oriented domain texture after poling plus the induced nonuniform stress are used to explain the observed domain switching anisotropy.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems

Ling Dai, V. B. C. Tan, Shuo-Wang Yang, Ping Wu, and Xian-Tong Chen

Appl. Phys. Lett. 90, 032906 (2007); http://dx.doi.org/10.1063/1.2432948 (3 pages) | Cited 1 time

Online Publication Date: 19 January 2007

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In ultralow-k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large scale ab initio molecular dynamics simulations, the authors found that the barrier degradation is due to H atoms introduced during PECVD. The H impurities diffuse into and transform an otherwise dense Ta layer into a loose amorphous phase which is ineffective as a diffusion barrier.
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77.55.-g Dielectric thin films
68.35.Fx Diffusion; interface formation
85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Enhanced tunable properties of Ba0.6Sr0.4TiO3 thin films grown on Pt/Ti/SiO2/Si substrates using MgO buffer layers

Weicheng Zhu, Jinrong Cheng, Shengwen Yu, Jia Gong, and Zhongyan Meng

Appl. Phys. Lett. 90, 032907 (2007); http://dx.doi.org/10.1063/1.2433029 (3 pages) | Cited 12 times

Online Publication Date: 19 January 2007

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Ba0.6Sr0.4TiO3 (BST) thin films were prepared on MgO buffered Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition. The crystallographic structure, interface characteristics, and dielectric properties of BST thin films are strongly dependent on MgO thickness. BST thin films exhibit (111) preferred orientation when MgO layer is thicker than 5 nm. The MgO layer can mitigate the interdiffusion between BST and Pt, causing the dielectric loss and leakage current of BST thin films to decrease significantly. The dielectric loss, tunability, and the largest figure of merit of BST thin films on 10 nm MgO achieve 0.009, 30%, and 33.4, respectively.
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77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.66.Fn Inorganic compounds
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