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15 Jan 2007

Volume 90, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 90, 032108 (2007); http://dx.doi.org/10.1063/1.2431702 (3 pages)

D. Buca, B. Holländer, S. Feste, St. Lenk, H. Trinkaus, S. Mantl, R. Loo, and M. Caymax
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Broadband Mo/Si multilayer transmission phase retarders for the extreme ultraviolet

Zhanshan Wang, Hongchang Wang, Jingtao Zhu, Zhong Zhang, Yao Xu, Shumin Zhang, Wenjuan Wu, Fengli Wang, Bei Wang, Liqin Liu, Lingyan Chen, Alan G. Michette, Slawka J. Pfauntsch, A. Keith Powell, Franz Schäfers, et al.

Appl. Phys. Lett. 90, 031901 (2007); http://dx.doi.org/10.1063/1.2431761 (3 pages) | Cited 6 times

Online Publication Date: 16 January 2007

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Experimental results on aperiodic broadband transmission molybdenum/silicon multilayer phase retarders for the extreme ultraviolet range are presented. The broadband phase retarders were designed using a numerical method and made using direct current magnetron sputtering on silicon nitride membrane. The polarization properties of these aperiodic transmission phase retarders have been investigated using the soft x-ray polarimeter at BESSY-II. The measured phase shift was about 42° in the wavelength range of 13.8–15.5 nm, and the corresponding s-component transmission (Ts) decreased from 6% to 2% with increasing wavelength.
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07.85.-m X- and γ-ray instruments
42.79.Ci Filters, zone plates, and polarizers

Plastic deformation modes of gallium arsenide in nanoindentation and nanoscratching

K. Wasmer, M. Parlinska-Wojtan, R. Gassilloud, C. Pouvreau, J. Tharian, and J. Micher

Appl. Phys. Lett. 90, 031902 (2007); http://dx.doi.org/10.1063/1.2431763 (3 pages) | Cited 12 times

Online Publication Date: 16 January 2007

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The mechanical deformation by nanoindentation and scratching of gallium arsenide has been investigated using cross-sectional transmission electron microscopy. Twinning was found to be the main deformation process occurring during indentation while only slip bands and perfect dislocations are observed during scratching. This behavior is explained, in the authors’ experiments, with the strain rate in scratching being hundred times greater than in indentation. Hence, the low indentation velocity allows twins to be nucleated and propagated from surface inhomogeneities, whereas in scratching, the deformation occurs first in front of the indenter and the scratching speed allows only perfect α dislocation to propagate.
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81.40.Lm Deformation, plasticity, and creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Mm Grain and twin boundaries
62.20.F- Deformation and plasticity
62.20.Qp Friction, tribology, and hardness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Amorphous states of melt-spun alloys in the system Dy–(Mn,Fe)6–(Ge,Al)6

P. Kerschl, U. K. Rößler, T. Gemming, K.-H. Müller, Z. Śniadecki, and B. Idzikowski

Appl. Phys. Lett. 90, 031903 (2007); http://dx.doi.org/10.1063/1.2432169 (3 pages) | Cited 4 times

Online Publication Date: 16 January 2007

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Amorphous states have been found in rapidly quenched alloys in the pseudoternary system DyMn6−x−yFex+yGe6−xAlx (x,y = 0 to 6). The amorphous state is formed in competition to the crystallization of ternary (1-6-6 rare earth-transition metal-metal) compounds. The melt-spun ribbons were investigated by x-ray diffraction, high resolution transmission electron microscopy, differential scanning calorimetry, and magnetization measurements. All amorphous samples exhibit multistep crystallization behavior without a clear indication for a glass transition below the first exothermic effect. Some of the amorphous alloys exhibit a magnetic ordering above room temperature and complex magnetic transitions similar to the properties of crystalline 1-6-6 compounds.
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61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.D- Solid-liquid transitions
64.70.K- Solid-solid transitions
81.30.Fb Solidification
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Density functional theoretical determinations of electronic and optical properties of nanowires and bulks for CdS and CdSe

S.-P. Huang, W.-D. Cheng, D.-S. Wu, J.-M. Hu, J. Shen, Z. Xie, H. Zhang, and Y.-J. Gong

Appl. Phys. Lett. 90, 031904 (2007); http://dx.doi.org/10.1063/1.2432170 (3 pages) | Cited 14 times

Online Publication Date: 16 January 2007

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The authors present density functional theoretical results of electronic and optical properties of wurtzite-type CdS and CdSe semiconductor nanowires and bulks. The results show that quantum confinement will increase the energy gap, decrease the dielectric function, change the sign of birefringence, and increase the absolute value of birefringence at low-frequency region, as the dimensions of CdS and CdSe are reduced from the bulk to a nanowire with diameter of several nanometers. The optical spectral peaks of CdSe nanowires show redshifts as compared with the corresponding ones of CdS nanowires.
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73.21.Hb Quantum wires
71.20.Nr Semiconductor compounds
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.67.Lt Quantum wires
78.20.Fm Birefringence
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Temperature dependent photoluminescence with spontaneous piezoelectric field in ZnO/Zn0.74Mg0.26O single quantum wells

Jian Cui

Appl. Phys. Lett. 90, 031905 (2007); http://dx.doi.org/10.1063/1.2431446 (3 pages) | Cited 5 times

Online Publication Date: 16 January 2007

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See Also: RETRACTION

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Temperature dependent time integrated and time resolved photoluminescence spectra of ZnO/Zn0.74Mg0.26O single quantum wells with and without spontaneous piezoelectric field are measured. The piezoelectric field can exist up to room temperature. The enhancement of piezoelectric field at low temperature reduces the optical transition energy by 75 meV from room temperature to 77 K, and correspondingly the lifetime increases from 1 to 66 ns. The nonradiative process is also weaker than the sample without piezoelectric field. A model in combination with piezoelectric field, free electrons in the well and quantum confinement is proposed and can be successfully used to explain the experimental data. The temperature dependent electron density is carried out with a donor density of 1.03×1020 cm−3 and an activation energy of 61.6 meV.
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78.67.De Quantum wells
78.55.Et II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.21.Fg Quantum wells

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

K. Opsomer, D. Deduytsche, C. Detavernier, R. L. Van Meirhaeghe, A. Lauwers, K. Maex, and C. Lavoie

Appl. Phys. Lett. 90, 031906 (2007); http://dx.doi.org/10.1063/1.2431781 (3 pages) | Cited 12 times

Online Publication Date: 17 January 2007

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A strong influence of substrate crystallinity is observed for thin-film Co/Ge reactions. For the detected phases (CoGe, Co5Ge7, and CoGe2), the formation temperatures on amorphous Ge (a-Ge) are found to be the lowest, while the highest are on single-crystalline Ge(100). Moreover, while the phase sequence on Ge(100) and polycrystalline Ge (poly-Ge) was unaltered, the formation of intermediate Co5Ge7 was not observed on a-Ge. It is likely that this is due to a promoted CoGe2 formation on a-Ge, resulting in a ∼ 200 °C decrease in formation temperature (depending on the ramp rate). These observations suggest a strong competition among the formation of these Ge-rich phases.
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81.05.Bx Metals, semimetals, and alloys
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Initial formation mechanisms of the supersaturation region and the columnar structure in ZnO thin films grown on n-Si (001) substrates

J. M. Yuk, J. Y. Lee, J. H. Jung, T. W. Kim, D. I. Son, and W. K. Choi

Appl. Phys. Lett. 90, 031907 (2007); http://dx.doi.org/10.1063/1.2432223 (3 pages) | Cited 8 times

Online Publication Date: 17 January 2007

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ZnO thin films were grown on n-Si (001) substrates by using plasma-assisted molecular beam epitaxy. A cross-sectional bright-field transmission electron microscopy (TEM) image showed that small ZnO columnar grains were embedded into large columnar grains, and a selected-area electron diffraction pattern, and an x-ray diffraction pattern showed that the ZnO thin film were nearly c-axis oriented. The evolution of the ZnO columnar structure was analyzed by using the evolution of the strain due to the interaction of the columnar grains, as observed by using high-resolution TEM. The initial formation mechanisms of the supersaturation region and the columnar grains are described.
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81.05.Dz II-VI semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.37.Lp Transmission electron microscopy (TEM)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Dq Plasma-based ion implantation and deposition

0.15–3.72 THz absorption of aqueous salts and saline solutions

Jing Xu, Kevin W. Plaxco, S. James Allen, Jon E. Bjarnason, and Elliott R. Brown

Appl. Phys. Lett. 90, 031908 (2007); http://dx.doi.org/10.1063/1.2430781 (3 pages) | Cited 2 times

Online Publication Date: 18 January 2007

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It has recently been suggested that near-field terahertz ionic contrast microscopy can be employed to image subtle changes in ionic concentrations arising from neuronal activity. To do so, however, requires that solvated ions exhibit significant absorbance at terahertz frequencies. The authors have investigated this issue and find that, at room temperature, the molar extinctions of both sodium chloride and guanidine hydrochloride are approximately two orders of magnitude below some previous measurements and are, therefore, too low to support the proposed imaging application.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
87.63.-d Non-ionizing radiation equipment and techniques

Redox properties of CeO2–MO2 (M = Ti, Zr, Hf, or Th) solid solutions from first principles calculations

D. A. Andersson, S. I. Simak, N. V. Skorodumova, I. A. Abrikosov, and B. Johansson

Appl. Phys. Lett. 90, 031909 (2007); http://dx.doi.org/10.1063/1.2431775 (3 pages) | Cited 21 times

Online Publication Date: 18 January 2007

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The authors have used density functional theory calculations to investigate how the redox thermodynamics and kinetics of CeO2 are influenced by forming solid solutions with TiO2, ZrO2, HfO2, and ThO2. Reduction is facilitated by dissolving TiO2 (largest improvement), HfO2, or ZrO2 (least improvement), while ThO2 makes reduction slightly more difficult. The migration barrier is much lower in the neighborhood of a Ti (largest decrease), Hf, or Zr (least decrease), while the binding energy of solute ions and vacancies increases in the same sequence. They rationalize the properties of ceria solid solutions in terms of defect cluster relaxations.
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82.30.-b Specific chemical reactions; reaction mechanisms
61.72.J- Point defects and defect clusters
64.75.-g Phase equilibria

Superheated liquid fragility and thermodynamic refinement for evaluation of metallic glass-forming ability

Q. G. Meng, S. G. Zhang, M. X. Xia, J. G. Li, and J. K. Zhou

Appl. Phys. Lett. 90, 031910 (2007); http://dx.doi.org/10.1063/1.2432167 (3 pages) | Cited 6 times

Online Publication Date: 18 January 2007

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Based on the super-Arrhenius equation and Angell’s fragility concept [J. Non-Cryst. Solids 131, 13 (1991) ], the expression of the fragility parameter for superheated liquid is deduced as M = E∞/kBTl, where E∞ is the activation energy, kB the Boltzmann constant, and Tl the liquidus temperature. It exhibits a negative correlation with the glass-forming ability (GFA) of the referenced metallic glasses in the same system rather than in the different systems, while the parameter ε based on order-disorder competition is just the opposite. The refined fragility parameter M* ( = M/ε) gives a much better reflection of the GFA for the metallic glasses.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
66.20.-d Viscosity of liquids; diffusive momentum transport

Control of guided resonance in a photonic crystal slab using microelectromechanical actuators

Yoshiaki Kanamori, Takashi Kitani, and Kazuhiro Hane

Appl. Phys. Lett. 90, 031911 (2007); http://dx.doi.org/10.1063/1.2431452 (3 pages) | Cited 30 times

Online Publication Date: 18 January 2007

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A wavelength-selective variable-reflection filter is proposed, in which a guided resonance in a photonic crystal (PC) slab is controlled by microelectronic mechanical actuators. A narrow wavelength response is generated by the guided resonance of PC slab, and the variable optical response at the wavelength is caused by evanescent-wave coupling to a substrate. The coupling is controlled by microelectromechanical actuators. The proposed filter has been fabricated by silicon micromachining and the mechanism has been confirmed.
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42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.86.+b Optical workshop techniques

Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors

Yoshihiro Kokubun, Kasumi Miura, Fumie Endo, and Shinji Nakagomi

Appl. Phys. Lett. 90, 031912 (2007); http://dx.doi.org/10.1063/1.2432946 (3 pages) | Cited 29 times

Online Publication Date: 19 January 2007

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β-Ga2O3 thin films have been prepared on (0001) sapphire substrates by the sol-gel method. X-ray diffraction showed that β-Ga2O3 polycrystalline films were formed at heat-treatment temperatures above 600 °C. With increasing heat-treatment temperature above 900 °C, the lattice constants of the β-Ga2O3 films decreased, while the band gap increased. Planar geometry photoconductive detectors based on the sol-gel prepared β-Ga2O3 thin films have been fabricated. They showed the photoresponse only for the wavelengths shorter than 270 nm, which correspond to the solar-blind region. The peak wavelength in the spectral response depended on the heat-treatment temperature in the sol-gel process.
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68.55.-a Thin film structure and morphology
78.66.-w Optical properties of specific thin films
73.61.-r Electrical properties of specific thin films
73.50.Pz Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.40.Gh Other heat and thermomechanical treatments

Ferrite-ferroelectric hybrid wave phase shifters

A. B. Ustinov, G. Srinivasan, and B. A. Kalinikos

Appl. Phys. Lett. 90, 031913 (2007); http://dx.doi.org/10.1063/1.2432953 (3 pages) | Cited 26 times

Online Publication Date: 19 January 2007

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A dual, electric and magnetic field tunable microwave phase shifter based on the propagation of hybrid spin-electromagnetic waves in a ferrite-ferroelectric bilayer is discussed. The bilayer consists of a single-crystal yttrium iron garnet film and a ceramic barium strontium titanate slab. The electrical tunability of the differential phase shift Δφ is achieved through the application of a voltage across barium strontium titanate. An insertion loss of 20 dB and a continuously variable Δφ as high as 650° in the frequency range of 4.5–8 GHz are measured.
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42.79.-e Optical elements, devices, and systems
85.70.Ge Ferrite and garnet devices
75.50.Gg Ferrimagnetics
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.20.Jq Electro-optical effects

Correlation between diamond grain size and hydrogen retention in diamond films studied by scanning electron microscopy and secondary ion mass spectroscopy

Sh. Michaelson, O. Ternyak, A. Hoffman, and Y. Lifshitz

Appl. Phys. Lett. 90, 031914 (2007); http://dx.doi.org/10.1063/1.2432996 (3 pages) | Cited 20 times

Online Publication Date: 19 January 2007

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The present work studies the incorporation of hydrogen in chemical vapor deposited polycrystalline diamond films with different grain sizes. Scanning electron microscopy and secondary ion mass spectroscopy were applied to investigate the film microstructure and hydrogen retention in the films, respectively. The present study provides the direct evidence of hydrogen concentration dependence on diamond grain size. The hydrogen retention in the diamond films increases with decreasing grain size, indicating that hydrogen is bonded and trapped in the grain boundary region. The two different sources—methane and hydrogen molecules—contribute to the hydrogen retention according to their abundance in the gas mixture.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Mm Grain and twin boundaries

Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

Noritaka Usami, Kentaro Kutsukake, Kazuo Nakajima, Sevak Amtablian, Alain Fave, and Mustapha Lemiti

Appl. Phys. Lett. 90, 031915 (2007); http://dx.doi.org/10.1063/1.2433025 (3 pages) | Cited 1 time

Online Publication Date: 19 January 2007

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Single crystalline Si with buried porous layers was utilized as a substrate for the epitaxy of 100-nm-thick Si0.73Ge0.27. Raman spectroscopy revealed that the strain status in SiGe systematically changes according to the variation in the porosity of the substrate and that the strain relaxation in SiGe was found to proceed with increasing porosity. Furthermore, Si was found to be tensilely strained to reduce the compressive strain in SiGe. These results suggest that the appropriate design of the porosity and the thickness of the thin Si layer on the buried porous layer offers an alternative way to control strain status in SiGe.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors
68.60.Bs Mechanical and acoustical properties
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