APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

22 Jan 2007

Volume 90, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 043507 (2007); http://dx.doi.org/10.1063/1.2435508 (3 pages)

D. Y. Kim and A. J. Steckl
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds
FREE

Comment on “Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts” [ Appl. Phys. Lett. 89, 033503 (2006) ]

Yow-Jon Lin, Chia-Lung Tsai, and Day-Shan Liu

Appl. Phys. Lett. 90, 046101 (2007); http://dx.doi.org/10.1063/1.2435354 (1 page)

Online Publication Date: 25 January 2007

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
78.70.Bj Positron annihilation
FREE

Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/n-GaN Schottky contacts [ Appl. Phys. Lett. 90, 046101 (2007) ]”

R. X. Wang, S. J. Xu, C. D. Beling, and C. K. Cheung

Appl. Phys. Lett. 90, 046102 (2007); http://dx.doi.org/10.1063/1.2435356 (1 page)

Online Publication Date: 25 January 2007

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
78.70.Bj Positron annihilation
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close