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22 Jan 2007

Volume 90, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 90, 043507 (2007); http://dx.doi.org/10.1063/1.2435508 (3 pages)

D. Y. Kim and A. J. Steckl
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Second harmonic generation and ferroelectric phase transitions in thick and ultrathin Pb0.35Sr0.65TiO3 films on (001) MgO substrates

S. W. Liu, J. Chakhalian, Min Xiao, and C. L. Chen

Appl. Phys. Lett. 90, 042901 (2007); http://dx.doi.org/10.1063/1.2433023 (3 pages) | Cited 12 times

Online Publication Date: 22 January 2007

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Second harmonic generation of a 16-nm-thick ultrathin Pb0.35Sr0.65TiO3 film and a 243-nm-thick Pb0.35Sr0.65TiO3 film grown on (001) MgO substrates by pulsed laser deposition is investigated. It is concluded that in the ultrathin film the ferroelectric phase is still present and the diffuse phase transition is absent. In contrast, the thick film exhibits a pronounced diffuse phase transition. Theoretical analysis based on the polarization diagrams shows that the compensated c-domain fraction is dominant in both films whereas the nonlinear susceptibility of the ultrathin film has a different tensor property from the thick film.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films

Modeling of imprint in hysteresis loop of ferroelectric thin films with top and bottom interface layers

Z. Ye, M. H. Tang, Y. C. Zhou, X. J. Zheng, C. P. Cheng, Z. S. Hu, and H. P. Hu

Appl. Phys. Lett. 90, 042902 (2007); http://dx.doi.org/10.1063/1.2433026 (3 pages) | Cited 13 times

Online Publication Date: 22 January 2007

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The imprint of a ferroelectric thin film capacitor is studied using an improved model consisting of two nonswitching thin interface layers near the top and bottom electrodes. The difference in electrical conductivity between the two interface layers induces voltage offset and deformation behaviors in hysteresis loops. Size dependence of shift effect of Bi4−xNdxTi3O12 thin film is explained qualitatively by taking into account the thickness ratio of the interface layer and the bulk film. Various shifts and anamorphic shapes with different electrodes and processes have been effectively reproduced through changing the layer conductivities. The simulated shifted hysteresis loops agree well with the experiment. Theoretical prediction based on this approach may provide a method to reduce imprint failure.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors

Structures and dielectric properties of Bi1.5Zn1.0Nb1.5−xTixO7 (x = 0, 0.05, and 0.10) thin films

Shan-Tao Zhang, Yi-Zhang, Ming-Hui Lu, Yan-Feng Chen, and Zhi-Guo Liu

Appl. Phys. Lett. 90, 042903 (2007); http://dx.doi.org/10.1063/1.2433762 (3 pages) | Cited 10 times

Online Publication Date: 22 January 2007

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B-site Ti-substituted Bi1.5Zn1.0Nb1.5O7 (Bi1.5Zn1.0Nb1.5−xTixO7, x = 0, 0.05, and 0.10) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. The x-ray diffraction and scanning electron microscopy measurements show that the films have a single phase and are well crystallized and homogeneous. Dielectric properties are investigated as function of temperature and frequency. It is found that the Ti substitution increases the dielectric constant. At 10 kHz, the room temperature dielectric constant and loss tangent (ε, tan δ) are (163, 0.006), (182, 0.014), (197, 0.010) for the films with x = 0, 0.05, and 0.10, respectively. In a wide temperature and frequency range (−100 °C ∼ 50 °C, 1 kHz ∼ 1 MHz), the dielectric constant is almost constant. However, below −100 °C, a dielectric relaxation depending on Ti content is observed. The relationship between structure and property of this thin film system is discussed.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
77.22.Gm Dielectric loss and relaxation

Wavelength dependence of light-induced domain nucleation in MgO-doped congruent LiNbO3 crystal

Ya’nan Zhi, De’an Liu, Weijuan Qu, Zhu Luan, and Liren Liu

Appl. Phys. Lett. 90, 042904 (2007); http://dx.doi.org/10.1063/1.2434151 (3 pages) | Cited 7 times

Online Publication Date: 22 January 2007

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Within the wavelength range from 351 to 799 nm, the different reductions of nucleation field induced by the focused continuous laser irradiation are achieved in the 5 mol % MgO-doped congruent LiNbO3 crystals. The reduction proportion increases exponentially with decreasing irradiation wavelength and decreases exponentially with increasing irradiation wavelength. At one given wavelength, the reduction proportion increases exponentially with increasing irradiation intensity. An assumption is proposed that the reduction of nucleation field is directly related to the defect structure of crystal lattice generated by the complex coaction of incident irradiation field and external electric field.
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68.55.A- Nucleation and growth
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.-y Defects and impurities in crystals; microstructure

Fabrication and electrical properties of (111) textured (Ba0.6Sr0.4)TiO3 film on platinized Si substrate

Yi Wang, Baoting Liu, Feng Wei, Zhimin Yang, and Jun Du

Appl. Phys. Lett. 90, 042905 (2007); http://dx.doi.org/10.1063/1.2431708 (3 pages) | Cited 8 times

Online Publication Date: 23 January 2007

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The authors report the fabrication of (Ba0.6Sr0.4)TiO3 (BST) film on Pt/Si(001) substrate without Ti adhesion layer by magnetron sputtering. X-ray diffraction technique is used to characterize the orientation and phase purity of BST/Pt heterostructure. It is found that both BST and Pt films are (111) textured. The (111) BST films are observed to have high tunability of 49.4%; the dielectric constant and dielectric loss of the BST film are about 682 and 0.015, respectively. The leakage current density of BST film agrees well with the space-charge-limited current theory at room temperature and is only 3.90×10−8 A/cm2 at 455 kV/cm.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Jp Dielectric breakdown and space-charge effects
68.55.-a Thin film structure and morphology

Charging phenomena in pentacene-gold nanoparticle memory device

W. L. Leong, P. S. Lee, S. G. Mhaisalkar, T. P. Chen, and A. Dodabalapur

Appl. Phys. Lett. 90, 042906 (2007); http://dx.doi.org/10.1063/1.2435598 (3 pages) | Cited 62 times

Online Publication Date: 23 January 2007

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The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25–2.05 V achievable under 5–10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz–1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Resonance Raman scattering of relaxors PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3

B. Mihailova, M. Bastjan, B. Schulz, M. Rübhausen, M. Gospodinov, R. Stosch, B. Güttler, T. Malcherek, and U. Bismayer

Appl. Phys. Lett. 90, 042907 (2007); http://dx.doi.org/10.1063/1.2433763 (3 pages) | Cited 2 times

Online Publication Date: 23 January 2007

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Relaxor PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 single crystals are studied at room temperature using resonance Raman scattering. It is shown that the phonon modes associated with O localized BO6 vibrations in ferroic clusters strongly resonate in the vicinity of the maximum of the optical dielectric response function at 3.71 eV. Resonance Raman spectroscopy can be used to estimate the fraction and the average size of polar nanoclusters in the relaxor state.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Room temperature multiferroic properties of single-phase (Bi0.9La0.1)FeO3–Ba(Fe0.5Nb0.5)O3 solid solution ceramics

Hanjong Paik, Hosung Hwang, Kwangsoo No, Seunghwa Kwon, and David P. Cann

Appl. Phys. Lett. 90, 042908 (2007); http://dx.doi.org/10.1063/1.2434182 (3 pages) | Cited 13 times

Online Publication Date: 24 January 2007

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The crystal structure and multiferroic properties of single-phase (Bi0.9La0.1)FeO3–Ba(Fe0.5Nb0.5)O3 ceramics were investigated. The rhombohedral-type structure of 1.0(Bi0.9La0.1)FeO3) was transformed to a monoclinic-type structure for the 0.5(Bi0.9La0.1)FeO3–0.5Ba(Fe0.5Nb0.5)O3) composition. It shows the coexistence of ferroelectricity and magnetism at room temperature, represented by a high dielectric constant with ferroelectric hysteresis and clear magnetic hysteresis behavior. The authors propose that the solid solution of A and B site cations according to their ionic radii and valence state stabilized the spontaneous polarization and magnetization at room temperature.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
75.50.Dd Nonmetallic ferromagnetic materials
61.66.Fn Inorganic compounds
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Acoustic Bragg mirrors and cavities made using piezoelectric oxides

A. Soukiassian, W. Tian, D. A. Tenne, X. X. Xi, D. G. Schlom, N. D. Lanzillotti-Kimura, A. Bruchhausen, A. Fainstein, H. P. Sun, X. Q. Pan, A. Cros, and A. Cantarero

Appl. Phys. Lett. 90, 042909 (2007); http://dx.doi.org/10.1063/1.2432246 (3 pages) | Cited 20 times

Online Publication Date: 24 January 2007

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The concept and design of acoustic Bragg mirrors and cavities made of multilayers of piezoelectric oxides with superior acoustic performance and potential applications in electronic and optical terahertz modulators are described. With these applications in mind the authors have grown phonon mirrors consisting of BaTiO3/SrTiO3 superlattices on SrTiO3 substrates by reactive molecular-beam epitaxy and investigated their properties. Characterization of the superlattices by x-ray diffraction and high-resolution transmission electron microscopy reveals high structural quality with nearly atomically abrupt interfaces. The authors have observed folded acoustic phonons at the expected frequencies using uv Raman spectroscopy.
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42.79.Jq Acousto-optical devices
42.79.Bh Lenses, prisms and mirrors
68.65.Cd Superlattices
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.30.Hv Other nonmetallic inorganics
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy

T. L. Goodrich, J. Parisi, Z. Cai, and K. S. Ziemer

Appl. Phys. Lett. 90, 042910 (2007); http://dx.doi.org/10.1063/1.2436636 (3 pages) | Cited 14 times

Online Publication Date: 25 January 2007

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Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (6H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111)‖6H-SiC (0001) and were stable in both air and 10−9 Torr up to 1023 K.
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68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.-j Plasma applications
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
68.43.Mn Adsorption kinetics

Phase transitional behavior and electrical properties of lead-free (K0.44Na0.52Li0.04)(Nb0.96−xTaxSb0.04)O3 piezoelectric ceramics

Zupei Yang, Yunfei Chang, and Lingling Wei

Appl. Phys. Lett. 90, 042911 (2007); http://dx.doi.org/10.1063/1.2436648 (3 pages) | Cited 40 times

Online Publication Date: 25 January 2007

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Lead-free (K0.44Na0.52Li0.04)(Nb0.96−xTaxSb0.04)O3 piezoelectric ceramics have been synthesized by conventional solid state sintering process. Two morphotropic phase boundaries (MPBs) respectively corresponding to the orthorhombic to tetragonal and tetragonal to pseudocubic phases are observed with increasing x. The ceramics with x = 0.20 between the two MPBs show significantly enhanced electrical properties, which are as follows: piezoelectric constant d33 = 252 pC/N, planar coupling coefficient kp = 0.42, dielectric constant εr = 1503, and dielectric loss tan δ = 0.025, and they show good stability. Lead-free superthin buzzer disks have been prepared by using piezoceramic membrane with x = 0.20. (K0.44Na0.52Li0.04)(Nb0.96−xTaxSb0.04)O3 ceramics are very promising as lead-free replacements for lead zirconate titanate.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
64.70.K- Solid-solid transitions
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Effect of vanadium content on remanent polarization in bismuth titanate thin films prepared by liquid source misted chemical deposition

Tai Suk Kim, Ki Woong Kim, Min Ku Jeon, Chang Hwa Jung, and Seong Ihl Woo

Appl. Phys. Lett. 90, 042912 (2007); http://dx.doi.org/10.1063/1.2432226 (3 pages) | Cited 3 times

Online Publication Date: 26 January 2007

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Bi4−x/3Ti3−xVxO12 (BTV) ferroelectric thin films were fabricated by liquid source misted chemical deposition. The substitution of vanadium for titanium site changed the crystalline orientation and surface morphology of the thin film, which in turn influenced the remanent polarization (Pr). 2Pr of BTV thin film increased with increase of vanadium content and reached a maximum value (21.5 μC/cm2) at x = 0.03, as this corresponded with the largest degree of a-axis orientation. However, at 0.05 ⩽ x ⩽ 0.09, 2Pr reduced with decrease in the degree of a-axis orientation. These results indicate that the Pr of the films is dependent on the degree of a-axis orientation.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology

Dielectric and ferroelectric properties of BaTiO3–(Na1/4Bi3/4)(Mg1/4Ti3/4)O3 ceramics

Xiaoli Wang and Wenjuan Cao

Appl. Phys. Lett. 90, 042913 (2007); http://dx.doi.org/10.1063/1.2432229 (3 pages) | Cited 7 times

Online Publication Date: 26 January 2007

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Perovskite ceramics (1−x)BaTiO3–x(Na1/4Bi3/4)(Mg1/4Ti3/4)O3 (x ⩽ 0.10) were prepared using solid-state reaction. The permittivity peak of the compositions x = 0.08 and 0.10 is saddle backed. The high turning temperature fixes at ∼ 400 K and is the Burns temperature TB of the samples. The low turning point decreases with increasing content of (Na1/4Bi3/4)(Mg1/4Ti3/4)O3 and is associated with transformation between domains and polar nanoregions. The P-E relationship indicates that the permittivity in the saddle-backed region for composition x = 0.10 is quasilinear when E<2 MV/m. The behavior suggests a possible way for developing linear dielectrics with very high permittivity.
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77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
61.66.Fn Inorganic compounds
64.70.K- Solid-solid transitions

Giant dielectric constant and resistance-pressure sensitivity in carbon nanotubes/rubber nanocomposites with low percolation threshold

Mei-Juan Jiang, Zhi-Min Dang, and Hai-Ping Xu

Appl. Phys. Lett. 90, 042914 (2007); http://dx.doi.org/10.1063/1.2432232 (3 pages) | Cited 25 times

Online Publication Date: 26 January 2007

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Nanocomposites consisting of methylvinyl silicone rubber (VMQ) with excellent elasticity as polymer matrix and multiwall carbon nanotube (MWNT) with large slenderness ratio and high conductivity as filler were fabricated by a solution method and subsequently hot pressing technology. Studies on dielectric property and resistance-pressure sensitivity of the MWNT/VMQ composites showed that there was a giant dielectric constant and significant resistance-pressure sensitivity as the concentration of MWNT was near a low percolation threshold, fc ≈ 0.012. After the composite applied an enough pressure for long time, the resistance-pressure sensitivity still shows an excellent reproducibility due to the good dispersion and low loading of MWNT.
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77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)
72.80.Tm Composite materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Improvements in the electrical properties of high-k HfO2 dielectric films on Si1−xGex substrates by postdeposition annealing

Tae Joo Park, Jeong Hwan Kim, Jae Hyuk Jang, Minha Seo, Cheol Seong Hwang, and Jeong Yeon Won

Appl. Phys. Lett. 90, 042915 (2007); http://dx.doi.org/10.1063/1.2432291 (3 pages) | Cited 3 times

Online Publication Date: 26 January 2007

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The changes in atomic-layer-deposited HfO2 films on Si and Si1−xGex (x = 0.1, 0.2, and 0.3) substrates by postdeposition annealing were studied. The migration of Ge reduced the capacitance equivalent thickness while keeping the leakage current density almost invariant after annealing. High resolution x-ray photoelectron spectroscopy and secondary ion mass spectroscopy analyses confirmed that Ge atoms which had diffused into the HfO2 layer during the deposition were drawn back to the substrate by annealing which was accompanied by the decrease in the interfacial strain energy. A very low interface trap density (1.3×1010 cm−2 eV−1) was obtained when x = 0.3.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
61.72.Cc Kinetics of defect formation and annealing
66.30.J- Diffusion of impurities
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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