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29 Jan 2007

Volume 90, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 052503 (2007); http://dx.doi.org/10.1063/1.2436715 (3 pages)

Biqin Huang, Igor Altfeder, and Ian Appelbaum
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Single order x-ray diffraction with binary sinusoidal transmission grating

L. F. Cao, E. Förster, A. Fuhrmann, C. K. Wang, L. Y. Kuang, S. Y. Liu, and Y. K. Ding

Appl. Phys. Lett. 90, 053501 (2007); http://dx.doi.org/10.1063/1.2435618 (3 pages) | Cited 8 times

Online Publication Date: 29 January 2007

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All existing x-ray dispersive devices including crystals, multilayers and diffraction gratings generate spectra in multiple orders. In this letter the authors describe how an axis symmetrically distributed sinusoidal-shaped aperture with binary transmittance values can be used to disperse x rays and with a superior diffraction pattern where, along its symmetry axis, all higher-order diffractions can be effectively suppressed. Hence this sophisticated dispersive element generates pure soft x-ray spectra in the first diffraction order, free from interference from higher diffraction orders.
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42.79.Dj Gratings
41.50.+h X-ray beams and x-ray optics

Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3

M. Wang, W. He, T. P. Ma, L. F. Edge, and D. G. Schlom

Appl. Phys. Lett. 90, 053502 (2007); http://dx.doi.org/10.1063/1.2437128 (3 pages) | Cited 7 times

Online Publication Date: 30 January 2007

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Electron tunneling spectroscopy (ETS) was used to study amorphous LaAlO3 and LaScO3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate dielectrics were prepared by molecular-beam deposition on (100) Si substrates. The authors have obtained vibrational modes for amorphous LaAlO3 and LaScO3 thin films from the ETS spectra, which provide information about the chemical bonding in these films and the interface with silicon. Traps and defects in amorphous LaAlO3 thin films are revealed in the ETS spectra, and their physical locations and energy levels are identified.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
78.66.Nk Insulators
63.50.-x Vibrational states in disordered systems

Complete stabilization and improvement of the characteristics of tunnel junctions by thermal annealing

P. J. Koppinen, L. M. Väistö, and I. J. Maasilta

Appl. Phys. Lett. 90, 053503 (2007); http://dx.doi.org/10.1063/1.2437662 (3 pages) | Cited 9 times

Online Publication Date: 30 January 2007

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The authors have observed that submicron sized Al–AlOx–Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between 350 and 450 °C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to the disappearance of unwanted resonances in the current. Charging energy, tunneling resistance, barrier thickness, and height all increase after the treatment. The superconducting gap is not affected, but supercurrent is reduced in accordance with the increase of tunneling resistance.
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74.50.+r Tunneling phenomena; Josephson effects
73.40.Rw Metal-insulator-metal structures
81.40.Gh Other heat and thermomechanical treatments
74.25.Jb Electronic structure (photoemission, etc.)

Process optimization of organic thin-film transistor by ink-jet printing of DH4T on plastic

Dae Ho Song, Min Hee Choi, June Young Kim, Jin Jang, and S. Kirchmeyer

Appl. Phys. Lett. 90, 053504 (2007); http://dx.doi.org/10.1063/1.2437684 (3 pages) | Cited 22 times

Online Publication Date: 30 January 2007

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The authors studied the organic thin-film transistor (OTFT) with a solution based dihexylquaterthiophene (DH4T) by ink-jet printing. The DH4T with 1.0 wt % solution in dichlorobenzene was used for printing of an active layer of OTFTs. In order to obtain a smooth and uniform film of DH4T, the substrate temperature was elevated to 60 °C and the printing was performed by an overlapping method. The OTFT on plastic exhibited an on/off current ratio of ∼ 107, a threshold voltage of −0.25 V, a gate voltage swing of 0.45 V/decade, and a field-effect mobility of 0.043 cm2/V s in the saturation region.
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85.30.Tv Field effect devices

All-optical switching in quantum cascade lasers

C. Zervos, M. D. Frogley, C. C. Phillips, D. O. Kundys, L. R. Wilson, M. Hopkinson, and M. S. Skolnick

Appl. Phys. Lett. 90, 053505 (2007); http://dx.doi.org/10.1063/1.2435602 (3 pages) | Cited 5 times

Online Publication Date: 30 January 2007

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The authors demonstrate the switching of the midinfrared output of a quantum cascade laser (QCL) using a near infrared control laser. The present, unoptimized, device offers 100% modulation depths, at approximately 50% of the maximum QCL output power, and has a switching energy of ∼ 15 nJ. It works as a resettable photon flux integrator which would give it a retiming function if used as a component for optical free space communications
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Significant improvement of electron mobility in organic thin-film transistors based on thiazolothiazole derivative by employing self-assembled monolayer

Daisuke Kumaki, Shinji Ando, Satoshi Shimono, Yoshiro Yamashita, Tokiyoshi Umeda, and Shizuo Tokito

Appl. Phys. Lett. 90, 053506 (2007); http://dx.doi.org/10.1063/1.2436641 (3 pages) | Cited 37 times

Online Publication Date: 1 February 2007

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n-type organic thin-film transistors based on a thiazolothiazole derivative were fabricated on a SiO2 gate insulator treated with n-alkyl self-assembled monolayers (SAMs), which were composed of various alkyl chain lengths. The field-effect electron mobility increased depending on the alkyl chain length of the SAMs. A long alkyl chain significantly improved the on current and electron mobility. The highest electron mobility of 1.2 cm2/V s and on/off ratio of 107 were achieved with an alkyl chain longer than that of tetradecyl-trichlorosilane. This result is attributed to the suppression of the influence of electron trap sites on the SiO2 gate insulator by employing the SAM with the long alkyl chain.
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85.30.Tv Field effect devices

Nucleation and growth of NiSi from Ni2Si transrotational domains

Alessandra Alberti, Corrado Spinella, Antonino La Magna, and Emanuele Rimini

Appl. Phys. Lett. 90, 053507 (2007); http://dx.doi.org/10.1063/1.2437058 (3 pages) | Cited 5 times

Online Publication Date: 1 February 2007

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The phase transition from Ni2Si to NiSi transrotational structures was studied in terms of incubation (t0) and characteristic (τ) times, i.e. the time required to trigger the transformation and the time after which the volume fraction occupied by the NiSi phase (χ) increases by 60%. The authors combined the effective medium approximation and the Avrami-Johnson-Mehl models to relate the measured sheet resistance Rs versus time to χ(t) in the temperature range between 230 and 320 °C With this method, the nucleation barrier and the activation energies for NiSi growth were obtained, 0.5 and 0.93 eV, respectively, with the density of nucleation sites higher in thicker layers.
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64.60.Q- Nucleation
64.70.K- Solid-solid transitions
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
73.61.-r Electrical properties of specific thin films

Band offsets of HfO2/GeON/Ge stacks measured by ultraviolet and soft x-ray photoelectron spectroscopies

E. Martinez, O. Renault, L. Fourdrinier, L. Clavelier, C. Le Royer, C. Licitra, T. Veyron, J. M. Hartmann, V. Loup, L. Vandroux, M. J. Guittet, and N. Barrett

Appl. Phys. Lett. 90, 053508 (2007); http://dx.doi.org/10.1063/1.2437096 (3 pages) | Cited 8 times

Online Publication Date: 1 February 2007

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Electronic properties of the HfO2/GeON/Ge stacks were studied using ultraviolet and synchrotron radiation photoelectron spectroscopies. The valence band offset of HfO2 with Ge is equal to 2.9±0.1 eV. Intermediate electronic states were observed in the GeON band gap related to structural defects, oxygen vacancies, and N 2p states. As a consequence, the GeON valence band offset with Ge is reduced by 2.4±0.1 eV to reach 1.2±0.1 eV. This value is lower than the previous reported results with a GeOx interfacial layer, but still compatible with the semiconductor technology.
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73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures

Low voltage and fast speed all-polymeric optocouplers

Yan Yao, Hsiang-Yu Chen, Jinsong Huang, and Yang Yang

Appl. Phys. Lett. 90, 053509 (2007); http://dx.doi.org/10.1063/1.2437683 (3 pages) | Cited 10 times

Online Publication Date: 1 February 2007

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An all-polymeric optocoupler has been demonstrated with a polymer light-emitting diode (PLED) as the light source (input unit) and a polymer/fullerene photodiode (PD) as the detector (output unit). The electroluminescence (EL) peak of the PLED is 560 nm, and the entire EL spectrum is within the response range of the PD. The optocoupler can work at low driving voltages, 5 V on the PLED and 0 V on the PD. The output photocurrent increases linearly with input current, and the current density transfer ratio reaches 1.5%. The frequency response of the optocoupler is at 500 kHz. With comparable performance to their inorganic counterparts, the all-polymeric optocouplers demonstrated here will bring the technology of organic photonic devices one step closer to commercialization.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
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